EMH2314-TL-H

Ordering number : EN8759A EMH2314 Power MOSFET –12V, 37mΩ, –5A, Dual P-Channel http://onsemi.com Features • ON-resistance RDS(on)1=28mW(typ.) • 1.8V drive • • Halogen free compliance Protection Diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Value Unit Drain-to-Source Voltage VDSS --12 Gate-to-Source Voltage VGSS ±8 V V Drain Current (DC) ID --5 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% Power Dissipation PD When mounted on ceramic substrate (900mm2×0.8mm) 1unit Total Dissipation PT Tj When mounted on ceramic substrate (900mm2×0.8mm) Junction Temperature Storage Temperature Tstg --20 A 1.0 W 1.2 W 150 °C --55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Thermal Resistance Ratings Parameter Symbol Junction to Ambient RθJA When mounted on ceramic substrate (900mm2×0.8mm) 1unit Package Dimensions EMH2314-TL-H °C/W 125 • Package : EMH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel 0.2 0.125 5 Taping Type : TL Marking MP 2.1 1.7 8 Unit Product & Package Information unit : mm (typ) 7045-002 0.2 Value TL 1 LOT No. 0.2 4 0.5 0.05 0.75 2.0 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Electrical Connection 8 7 6 5 1 2 3 4 EMH8 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 July, 2014 72214HK TC-00003140/51612TKIM PE No.8759-1/5 EMH2314 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Forward Transconductance Static Drain-to-Source On-State Resistance Ratings min typ max Unit V(BR)DSS IDSS ID= --1mA, VGS=0V VGS(th) gFS VDS= --6V, ID= --1mA VDS= --6V, ID= --2.5A 11 RDS(on)1 ID= --2.5A, VGS= --4.5V 28 37 mW RDS(on)2 ID= --1.5A, VGS= --2.5V 53 75 mW RDS(on)3 ID= --0.5A, VGS= --1.8V 133 200 mW IGSS Gate Threshold Voltage Conditions Input Capacitance Ciss Output Capacitance Coss --12 V VDS= --12V, VGS=0V VGS=±8V, VDS=0V --0.4 VDS= --6V, f=1MHz --10 mA ±10 mA --1.3 V S 1300 pF 158 pF Reverse Transfer Capacitance Crss 143 pF Turn-ON Delay Time td(on) 16 ns Rise Time tr 77 ns Turn-OFF Delay Time td(off) 79 ns Fall Time tf 58 ns Total Gate Charge Qg 12 nC Gate-to-Source Charge Qgs 3 nC Gate-to-Drain “Miller” Charge Qgd Forward Diode Voltage VSD See specified Test Circuit. VDS= --6V, VGS= --4.5V, ID= --5A 2 IS= --5A, VGS=0V --0.9 nC --1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 0V --4.5V VDD= --6V VIN ID= --2.5A RL=2.4Ω VIN D PW=10μs D.C.≤1% VOUT G P.G 50Ω EMH2314 S Ordering Information Device EMH2314-TL-H Package Shipping memo EMH8 3,000pcs./reel Pb-Free and Halogen Free No.8759-2/5 EMH2314 --3.0 --2.5 --2.0 --1.5 --1.6V --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Drain-to-Source Voltage, VDS -- V ID= --0.5A --1.5A --2.5A 100 80 60 40 20 0 --1 --2 --3 --4 --5 --6 --7 10 7 5 3 2 = Ta 5°C --2 1.0 7 5 25 75 °C °C 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 --0.5 , I D= --1.8V = V GS 140 120 100 80 = --1.5A 2.5V, I D -= V GS I = --2.5A VGS= --4.5V, D 60 40 20 --20 0 20 40 60 80 100 120 140 160 IT16896 IS -- VSD VGS=0V 3 2 --1.0 7 5 3 2 --0.1 7 5 SW Time -- ID --0.4 --0.6 --0.8 --1.0 Forward Diode Voltage, VSD -- V Ciss, Coss, Crss -- VDS --1.2 --1.4 HD16898 f=1MHz 5 Ciss, Coss, Crss -- pF 2 td(off) 100 tf 7 5 tr 3 td(on) 2 3 --0.2 7 3 2 0 10000 VDD= --6V VGS= --4.5V 10 --0.1 --0.01 5 7 --10 HD16897 Drain Current, ID -- A 5 --3.0 IT16894 3 2 0.1 --0.01 7 --2.5 A 160 --10 7 5 3 2 1000 --2.0 Ambient Temperature, Ta -- °C VDS= --6V 3 2 --1.5 180 IT16895 gFS -- ID --1.0 RDS(on) -- Ta 0 --60 --40 --8 Source Current, IS -- A Forward Transconductance, gFS -- s Gate-to-Source Voltage, VGS -- V 100 7 5 --0.5 Gate-to-Source Voltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 160 120 0 200 180 0 0 --1.0 Ta=25°C 140 --2 IT16893 RDS(on) -- VGS 200 --3 --1 VGS= --1.3V 0 --4 --25°C 0 --5 25°C --0.5 Switching Time, SW Time -- ns --6 --3.5 --1.0 VDS= --6V Ta=75 °C --2. 5V --3.0 V 8V . --1 Drain Current, ID -- A Drain Current, ID -- A --4.0 --4.5V --8.0V --4.5 ID -- VGS --7 Ta=--2 5°C 75°C 25°C ID -- VDS --5.0 5 7 --1.0 3 2 Ciss 1000 7 5 3 Coss 2 2 Drain Current, ID -- A 3 5 7 100 --10 IT16899 Crss 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --11 --12 Drain-to-Source Voltage, VDS -- V IT16900 No.8759-3/5 EMH2314 VGS -- Qg --100 7 5 3 2 VDS= --6V ID= --5A --4.0 --3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 1 2 3 4 5 6 7 8 9 10 11 Total Gate Charge, Qg -- nC ID= --5A 0m ms s n( Ta = tio 25 °C ) Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) --0.01 --0.01 2 3 12 op 10 10 era --1.0 7 5 3 2 --0.1 7 5 3 2 DC 1 1m00μs s 5 7--0.1 2 3 5 7--1.0 2 3 5 7--10 Drain-to-Source Voltage, VDS -- V 2 3 5 7--100 HD16902 5 5 When mounted on ceramic substrate (900mm2×0.8mm) 1.2 Power Dissipation, PD -- W IDP= --20A(PW≤10μs) IT16901 PD -- Ta 1.4 --10 7 5 3 2 SOA 1.0 To t al 0.8 1u 0.6 di ss ip at ni t io n 0.4 0.2 0 0 25 50 75 100 125 150 Ambient Temperature, Ta -- °C RθJA -- Pulse Time Thermal Resistance, RθJA -- ºC/W 1000 100 10 175 HD16903 Duty Cycle=0.5 0.2 0.1 0.05 0.02 0.01 1.0 lse le Pu Sing 0.1 0.000001 2 3 5 70.00001 2 3 5 70.0001 2 3 5 7 0.001 2 3 5 7 0.01 Pulse Time, PT -- s 2 3 7 0.1 2 3 5 7 1.0 2 3 7 10 HD No.8759-4/5 EMH2314 Outline Drawing EMH2314-TL-H Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 1.9 0.4 0.3 0.5 Note on usage : Since the EMH2314 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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