Ordering number : ENA1170A
EMH2408
N-Channel Power MOSFET
http://onsemi.com
20V, 4A, 45mΩ, Dual EMH8
Features
•
•
•
The EMH2408 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,
thereby enabling high-density mounting
1.8V drive
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (Pulse)
Allowable Power Dissipation
Unit
20
V
±12
V
4
A
PW≤10μs, duty cycle≤1%
16
A
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
1.0
W
Total Dissipation
PD
PT
1.2
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
When mounted on ceramic substrate (900mm2×0.8mm)
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7045-006
• Package
: EMH8
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
0.125
0.2
0.2
EMH2408-TL-H
5
Packing Type : TL
Marking
LH
2.1
1.7
8
TL
1
Lot No.
0.2
4
0.5
0.05
0.75
2.0
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Electrical Connection
8
7
6
5
1
2
3
4
EMH8
Semiconductor Components Industries, LLC, 2013
July, 2013
71112 TKIM/90308PE TIIM TC-00001558 No. A1170-1/7
EMH2408
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Conditions
Ratings
min
typ
20
ID=1mA, VGS=0V
VDS=20V, VGS=0V
Gate-to-Source Leakage Current
IGSS
Cutoff Voltage
VGS(off)
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
0.4
Forward Transfer Admittance
| yfs |
VDS=10V, ID=2A
2.0
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
ID=4A, VGS=4.5V
ID=1A, VGS=2.5V
ID=0.5A, VGS=1.8V
RDS(on)3
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Unit
max
V
1
μA
±10
μA
1.3
3.4
V
S
34
45
mΩ
49
67
mΩ
74
115
mΩ
345
pF
67
pF
Crss
52
pF
Turn-ON Delay Time
td(on)
9.2
ns
Rise Time
tr
td(off)
60
ns
30
ns
Turn-OFF Delay Time
Fall Time
VDS=10V, f=1MHz
See specified Test Circuit.
tf
Qg
Total Gate Charge
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=10V, VGS=4.5V, ID=4A
IS=4A, VGS=0V
38
ns
4.7
nC
0.65
nC
1.6
nC
0.8
1.2
V
Switching Time Test Circuit
VDD=10V
VIN
4.5V
0V
ID=2A
RL=5Ω
VIN
D
VOUT
PW=10μs
D.C.≤1%
G
EMH2408
P.G
50Ω
S
Ordering Information
Device
EMH2408-TL-H
Package
Shipping
memo
EMH8
3,000pcs./reel
Pb Free and Halogen Free
No. A1170-2/7
EMH2408
ID -- VDS
1.8V
4.5V
VDS=10V
4.5
4.0
2.0
1.5
1.0
3.0
2.5
2.0
1.5
1.0
VGS=1.2V
0.5
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Drain-to-Source Voltage, VDS -- V
1.0
0
90
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
1A
4A
80
70
60
50
40
30
20
10
1
2
3
4
5
6
Gate-to-Source Voltage, VGS -- V
80
70
=1A
V, I D
=2.5
VGS
60
50
A
I =4
4.5V, D
=
VGS
40
30
20
10
--40
--20
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
VDS=10V
140
160
IT13502
IS -- VSD
7
5
VGS=0V
3
2
2
Ta
C
75°
1.0
C
5°
7
2
5
3
1.0
7
5
3
2
0.1
7
5
3
2
--25°C
°C
-25
=-
5°C
25°C
3
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
A
=0.5
, ID
1.8V
=
VGS
90
IT13501
| yfs | -- ID
7
2
0.1
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
Drain Current, ID -- A
3
5
0.01
0.1
7
0.3
0.7
0.9
1.1
IT13504
Ciss, Coss, Crss -- VDS
1000
VDD=10V
VGS=4.5V
3
0.5
Diode Forward Voltage, VSD -- V
IT13503
SW Time -- ID
5
f=1MHz
7
2
5
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
8
7
2.0
IT13500
100
0
--60
0
0
1.5
RDS(on) -- Ta
Ta=
7
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
ID=0.5A
1.0
110
Ta=25°C
100
0.5
Gate-to-Source Voltage, VGS -- V
IT13499
RDS(on) -- VGS
110
5
25°
0.5
--25°C
1.5V
3.5
C
2.5
Ta=
75°
C
Drain Current, ID -- A
3.0
ID -- VGS
5.0
8.0V
3.5
Drain Current, ID -- A
2.5V
2.0V
4.0
100
7
5
td (off)
3
tf
2
td(on)
tr
10
7
Ciss
3
2
100
Coss
Crss
7
5
5
3
3
2
0.01
2
2
3
5 7 0.1
2
3
5 7 1.0
Drain Current, ID -- A
2
3
5 7 10
IT13505
0
2
4
6
8
10
12
14
16
Drain-to-Source Voltage, VDS -- V
18
20
IT13506
No. A1170-3/7
EMH2408
VGS -- Qg
4.5
4.0
10
7
5
3.5
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
3
2
VDS=10V
ID=4A
3.0
2.5
2.0
1.5
1.0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Total Gate Charge, Qg -- nC
5.0
IT13507
PD -- Ta
1.4
Allowable Power Dissipation, PD -- W
4.5
PW≤10μs
10
0
1m μs
s
ID=4A
DC
3
2
10
m
op
era
10
tio
1.0
7
5
Operation in this
area is limited by RDS(on).
s
0m
s
Ta
=2
5°
C)
n(
3
2
0.1
7
5
3
2
0.5
ASO
IDP=16A
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2✕0.8mm) 1unit
0.01
0.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
Drain-to-Source Voltage, VDS -- V
2
3
IT13508
When mounted on ceramic substrate
(900mm2✕0.8mm)
1.2
1.0
To
t
0.8
al
di
1u
0.6
ss
ip
ati
on
nit
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT13509
No. A1170-4/7
EMH2408
Embossed Taping Specification
EMH2408-TL-H
No. A1170-5/7
EMH2408
Outline Drawing
EMH2408-TL-H
Land Pattern Example
Mass (g) Unit
0.008 mm
* For reference
Unit: mm
1.9
0.4
0.3
0.5
No. A1170-6/7
EMH2408
Note on usage : Since the EMH2408 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
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PS No. A1170-7/7
