EMH2418R-TL-H

Ordering number : ENA2267A EMH2418R N-Channel Power MOSFET 24V, 9A, 15mΩ, Dual EMH8 http://onsemi.com Electrical Connection Features N-channel  Low On-resistance 2.5V drive  Common-Drain Type  Protection diode in  Built-in gate protection resistor  Best suited for LiB charging and discharging switch Halogen free compliance 8 7 6 5 1 2 3 4 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Value Unit Drain to Source Voltage VDSS 24 V Gate to Source Voltage VGSS 12 V Drain Current (DC) ID 9 A Drain Current (Pulse) IDP 40 A PD 1.3 W Marking LT PW10s, duty cycle1% Power Dissipation LOT No. When mounted on ceramic substrate(900mm20.8mm) 1unit Total Dissipation PT 1.4 W 150 C - 55 to +150 C When mounted on ceramic substrate(900mm 0.8mm) 2 Tj JunctionTemperature Tstg Storage Temperature Packing Type:TL Thermal Resistance Ratings TL Parameter Symbol RJA Junction to Ambient Value 96 Unit C/W When mounted on ceramic substrate(900mm 0.8mm) 2 Ordering & Package Information Device Package EMH2418R-TL-H Pb-free and Halogen Free EMH8 Shipping 3,000 pcs. / reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Semiconductor Components Industries, LLC, 2014 February, 2014 21314HK TC-00003090/D1813HK PE No. A2267-1/6 EMH2418R Electrical Characteristics at Ta  25C Value Parameter Symbol Conditions Unit min Drain to Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=20V, VGS=0V Gate to Source Leakage Current IGSS VGS=±8V, VDS=0V Gate Threshold Voltage VGS(th) VDS=10V, ID=1mA Forward Transconductance Static Drain to Source On-State Resistance Turn-ON Delay Time typ max 24 V 0.5 1 A 1 A 1.3 V gFS VDS=10V, ID=4A RDS(on)1 ID=4A, VGS=4.5V 9.6 12 4 15 m S RDS(on)2 ID=4A, VGS=4.0V 10.0 12.5 16.3 m RDS(on)3 ID=4A, VGS=3.1V 11.3 14.2 20 m RDS(on)4 ID=2A, VGS=2.5V 13.2 16.5 23.1 m td(on) See specified Test Circuit. 120 ns Rise Time tr 170 ns Turn-OFF Delay Time td(off) 17500 ns Fall Time tf 22600 ns Total Gate Charge Qg 4.4 nC Gate to Source Charge Qgs VDS=10V, VGS=4.5V, ID=9A 0.9 nC Gate to Drain “Miller” Charge Qgd 0.7 nC Forward Diode Voltage VSD IS=9A, VGS=0V 0.8 1.2 V Switching Time Test Circuit VDD=10V VIN 4.5V 0V ID=4A RL=2.5 VIN D VOUT PW=10s D.C.1% G Rg EMH2418R P.G 50 S Rg=1k No.A2267-2/6 EMH2418R No.A2267-3/6 EMH2418R No.A2267-4/6 EMH2418R Package Dimensions EMH2418R-TL-H SOT-383FL/EMH8 CASE419AT ISSUE O Unit : mm 1: Source1 2: Gate1 3: Source2 4: Gate2 5: Drain 6: Drain 7: Drain 8: Drain Soldering Footprint 1.9 0.4 0.3 0.5 No.A2267-5/6 EMH2418R Note on usage : Since the EMH2418R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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