Ordering number : EN9006A
EMH2604
Power MOSFET
http://onsemi.com
20V, 4A, 45mΩ, –20V, –3A, 85mΩ, Complementary Dual EMH8
Features
•
•
•
•
Nch + Pch MOSFET
ON-resistance Nch : RDS(on)1=34mΩ(typ.)
Pch : RDS(on)1=65mΩ(typ.)
1.8V drive
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
N-channel
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
PD
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
PT
Tch
Storage Temperature
Tstg
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
P-channel
--20
V
±10
±10
V
4
--3
A
20
--20
1.0
When mounted on ceramic substrate (900mm2×0.8mm)
Unit
20
A
W
1.2
W
150
°C
--55 to +150
°C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7045-002
• Package
: EMH8
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
EMH2604-TL-H
5
Packing Type : TL
Marking
FD
2.1
1.7
8
0.125
0.2
0.2
TL
1
LOT No.
0.2
4
0.5
0.05
0.75
2.0
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Electrical Connection
8
7
6
5
1
2
3
4
EMH8
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/60111PE TKIM TC-00002607 No.9006-1/9
EMH2604
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
Unit
max
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
V(BR)DSS
IDSS
ID=1mA, VGS=0V
VDS=20V, VGS=0V
IGSS
VGS(off)
| yfs |
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=2A
3.4
RDS(on)1
ID=4A, VGS=4.5V
34
45
mΩ
RDS(on)2
ID=1A, VGS=2.5V
49
67
mΩ
RDS(on)3
ID=0.5A, VGS=1.8V
74
115
mΩ
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
20
V
0.4
1
μA
±10
μA
1.3
V
S
345
pF
67
pF
Crss
52
pF
td(on)
tr
9.2
ns
60
ns
VDS=10V, f=1MHz
See specified Test Circuit.
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
IS=4A, VGS=0V
V(BR)DSS
IDSS
IGSS
ID=--1mA, VGS=0V
VDS=10V, VGS=4.5V, ID=4A
30
ns
38
ns
4.7
nC
0.65
nC
1.6
0.8
nC
1.2
V
--1
μA
±10
μA
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
--20
V
VDS=--20V, VGS=0V
VGS=±8V, VDS=0V
VDS=--10V, ID=--1mA
Forward Transfer Admittance
VGS(off)
| yfs |
VDS=--10V, ID=--1.5A
3.6
RDS(on)1
RDS(on)2
ID=--3A, VGS=--4.5V
65
85
mΩ
Static Drain-to-Source On-State Resistance
ID=--1A, VGS=--2.5V
98
137
mΩ
RDS(on)3
ID=--0.5A, VGS=--1.8V
155
235
mΩ
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
--0.4
--1.3
V
S
320
pF
66
pF
Crss
50
pF
td(on)
tr
7.1
ns
21
ns
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=--10V, f=1MHz
See specified Test Circuit.
VDS=--10V, VGS=--4.5V, ID=--3A
IS=--3A, VGS=0V
37
ns
32
ns
4.0
nC
0.6
nC
1.1
nC
--0.83
--1.2
V
No.9006-2/9
EMH2604
Switching Time Test Circuit
[N-channel]
4.5V
0V
[P-channel]
VDD=10V
VIN
0V
--4.5V
ID=2A
RL=5Ω
VIN
D
PW=10μs
D.C.≤1%
VDD= --10V
VIN
VOUT
D
PW=10μs
D.C.≤1%
G
VOUT
G
EMH2604
P.G
ID= --1.5A
RL=6.67Ω
VIN
50Ω
EMH2604
P.G
S
50Ω
S
Ordering Information
Device
Package
Shipping
memo
EMH8
3,000pcs./reel
Pb Free and Halogen Free
EMH2604-TL-H
ID -- VDS
4.0
2.0
1.5
1.0
3.0
2.5
2.0
1.5
VGS=1.2V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Drain-to-Source Voltage, VDS -- V
ID=0.5A
90
80
[Nch]
1A
4A
70
60
50
40
30
20
10
0
1
2
3
4
5
6
Gate-to-Source Voltage, VGS -- V
0.5
0
7
8
IT13501
1.0
1.5
2.0
Gate-to-Source Voltage, VGS -- V
IT13500
RDS(on) -- Ta
110
Ta=25°C
100
0
0
1.0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0.5
IT13499
RDS(on) -- VGS
110
Ta=
7
1.0
0.5
25° --25°C
C
1.5V
3.5
5°C
2.5
0
[Nch]
VDS=10V
4.5
Drain Current, ID -- A
3.0
ID -- VGS
5.0
1.8V
4.5V
[Nch]
8.0V
3.5
Drain Current, ID -- A
2.5V
2.0V
4.0
[Nch]
100
A
90
=0.5
V, I D
=1.8
VGS
80
70
=1A
V, I D
60
=2.5
VGS
50
4A
, I D=
=4.5V
VGS
40
30
20
10
0
--60
--40
--20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
140
160
IT13502
No.9006-3/9
EMH2604
| yfs | -- ID
[Nch]
VDS=10V
5
2
C
75°
1.0
7
C
5°
2
5
3
3
2
0.1
7
5
3
2
2
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
0.01
0.1
7
0.3
[Nch]
2
0.7
0.9
1.1
IT13504
Ciss, Coss, Crss -- VDS
1000
VDD=10V
VGS=4.5V
3
0.5
Diode Forward Voltage, VSD -- V
IT13503
SW Time -- ID
5
[Nch]
f=1MHz
7
5
Ciss, Coss, Crss -- pF
100
7
5
td (off)
3
tf
2
td(on)
tr
10
7
Ciss
3
2
100
Coss
Crss
7
5
5
3
3
3
5 7 0.1
2
3
5 7 1.0
2
3
Drain Current, ID -- A
[Nch]
Drain Current, ID -- A
3.0
2.5
2.0
1.5
1.0
0.5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Total Gate Charge, Qg -- nC
[Pch]
16
18
20
IT13506
[Nch]
10
0
1m μs
s
10
m
10
DC
0m
s
s
op
era
tio
Operation in this
area is limited by RDS(on).
0.1
7
5
3
2
--5.0
.8V
Drain Current, ID -- A
--4.
5
--1.5V
--0.5
VGS= --1.2V
--0.1
14
n
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm)
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
ID -- VGS
5 7 100
IT16454
[Pch]
VDS= --10V
--4.0
--1.0
0
12
ID=4A
1.0
7
5
3
2
--4.5
--1.5
0
10
Drain-to-Source Voltage, VDS -- V
--1
--10V
--3.5
V
--2.5
V
--8V
--2.0
10
7
5
3
2
0.01
0.01
5.0
V
--2.5
8
IDP=20A (PW≤10μs)
IT13507
ID -- VDS
--3.0
4.5
6
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
Drain-to-Source Voltage, VDS -- V
--0.9
--1.0
IT14533
--3.5
--3.0
--2.5
--2.0
C
--25
°C
0
4
ASO
100
7
5
3
2
3.5
0
2
Drain-to-Source Voltage, VDS -- V
VDS=10V
ID=4A
4.0
0
IT13505
VGS -- Qg
4.5
2
5 7 10
--1.5
--1.0
°C
2
Ta=
75°
2
0.01
--0.5
0
25
Switching Time, SW Time -- ns
1.0
7
5
--25°C
Ta
5°C
25°C
2
Ta=
7
°C
-25
=-
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
[Nch]
VGS=0V
3
3
0.1
0.01
Drain Current, ID -- A
IS -- VSD
7
5
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
7
0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 --2.2
Gate-to-Source Voltage, VGS -- V
IT14534
No.9006-4/9
EMH2604
RDS(on) -- VGS
240
[Pch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
180
ID= --0.5A
150
--1A
120
--3A
90
60
30
0
--1
--2
--3
--4
--5
--6
--7
Gate-to-Source Voltage, VGS -- V
140
--1.0A
, I D=
V
5
.
2
= -VGS
.0A
I = --3
--4.5V, D
=
V GS
120
100
80
60
40
20
--20
0
20
40
60
80
100
120
140
160
IT14536
IS -- VSD
7
5
[Pch]
VGS=0V
3
2
2
=
Ta
5
--2
°C
°C
75
1.0
°C
25
7
5
3
--1.0
7
5
3
2
25°
C
--2
5°C
3
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
[Pch]
--0.1
7
5
3
2
2
2
3
5 7 --0.1
2
3
5 7 --1.0
2
Drain Current, ID -- A
SW Time -- ID
5
3
3
5
--0.01
--0.3
7
--0.4
--0.5
--0.6
--0.7
[Pch]
VDD= --10V
VGS= --4.5V
td(off)
5
3
tf
2
tr
10
td(on)
7
--1.0
--1.1
IT14538
[Pch]
f=1MHz
5
Ciss
3
7
--0.9
Ciss, Coss, Crss -- VDS
7
2
100
--0.8
Diode Forward Voltage, VSD -- V
IT14537
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
=
VGS
= --0
V, I D
--1.8
Ambient Temperature, Ta -- °C
5
0.1
--0.01
2
100
Coss
Crss
7
5
5
3
3
2
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
Drain Current, ID -- A
3
2
5 7 --10
[Pch]
--100
7
5
3
2
Drain Current, ID -- A
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
Total Gate Charge, Qg -- nC
--2
--4
3.5
4.0
4.5
IT14541
--6
--8
--12
--10
--14
--16
--18
Drain-to-Source Voltage, VDS -- V
VDS= --10V
ID= --3A
--4.0
0
IT14539
VGS -- Qg
--4.5
Gate-to-Source Voltage, VGS -- V
160
0
--60 --40
--8
VDS= --10V
7
.5A
180
IT14535
| yfs | -- ID
10
200
5°C
0
[Pch]
220
Ta=
7
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
210
RDS(on) -- Ta
240
Ta=25°C
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--20
IT14540
ASO
[Pch]
IDP= --20A (PW≤10μs)
ID= --3A
10
10
0
1m μs
s
m
10
DC
0m
s
s
op
era
tio
n
Operation in this
area is limited by RDS(on).
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm)
--0.01
--0.01 2 3
5 7--0.1
2 3
5 7--1.0
2 3
5 7--10
2 3
Drain-to-Source Voltage, VDS -- V
5 7--100
IT16455
No.9006-5/9
EMH2604
PD -- Ta
Allowable Power Dissipation, PD -- W
1.4
[Nch/Pch]
When mounted on ceramic substrate
(900mm2×0.8mm)
1.2
1.0
To
t
al
0.8
1u
di
ss
ip
ati
on
nit
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT16456
No.9006-6/9
EMH2604
Embossed Taping Specification
EMH2604-TL-H
No.9006-7/9
EMH2604
Outline Drawing
EMH2604-TL-H
Land Pattern Example
Mass (g) Unit
0.008 mm
* For reference
Unit: mm
1.9
0.4
0.3
0.5
No.9006-8/9
EMH2604
Note on usage : Since the EMH2604 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No.9006-9/9
