EMT1DXV6
Dual General Purpose
Transistor
PNP Dual
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT−563 which is designed for low
power surface mount applications.
(3)
Features
• Lead−Free Solder Plating
• Low VCE(SAT), t0.5 V
• NSV Prefix for Automotive and Other Applications Requiring
•
http://onsemi.com
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
(1)
Q1
Q2
(4)
(5)
(6)
6
MAXIMUM RATINGS
Rating
(2)
Symbol
Value
1
Unit
SOT−563
CASE 463A
STYLE 1
Collector −Emitter Voltage
VCEO
−60
V
Collector −Base Voltage
VCBO
−50
V
Emitter −Base Voltage
VEBO
−6.0
V
IC
−100
mAdc
MARKING DIAGRAM
Symbol
Max
Unit
3T M G
G
Collector Current − Continuous
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
TA = 25°C
PD
Derate above 25°C
1
mW/°C
3T = Specific Device Code
M = Month Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
RqJA
350
(Note 1)
°C/W
Symbol
Max
Unit
ORDERING INFORMATION
mW
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Thermal Resistance,
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
mW
357
(Note 1)
2.9
(Note 1)
Total Device Dissipation
TA = 25°C
PD
500
(Note 1)
4.0
(Note 1)
Derate above 25°C
mW/°C
Thermal Resistance,
Junction-to-Ambient
RqJA
250
(Note 1)
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ Minimum Pad.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 2
1
Publication Order Number:
EMT1DXV6T1/D
EMT1DXV6
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Symbol
Min
Typ
Max
Unit
Collector−Base Breakdown Voltage
(IC = −50 mAdc, IE = 0)
V(BR)CBO
−60
−
−
Vdc
Collector−Emitter Breakdown Voltage
(IC = −1.0 mAdc, IB = 0)
V(BR)CEO
−50
−
−
Vdc
Emitter−Base Breakdown Voltage
(IE = −50 mAdc, IE = 0)
V(BR)EBO
−6.0
−
−
Vdc
Collector−Base Cutoff Current
(VCB = −30 Vdc, IE = 0)
ICBO
−
−
−0.5
nA
Emitter−Base Cutoff Current
(VEB = −5.0 Vdc, IB = 0)
IEBO
−
−
−0.5
mA
−
−
−0.5
120
−
560
−
140
−
−
3.5
−
Characteristic
Collector−Emitter Saturation Voltage (Note 2)
(IC = −50 mAdc, IB = −5.0 mAdc)
VCE(sat)
DC Current Gain (Note 2)
(VCE = −6.0 Vdc, IC = −1.0 mAdc)
Vdc
hFE
Transition Frequency
(VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz)
−
fT
Output Capacitance
(VCB = −12 Vdc, IE = 0 Adc, f = 1 MHz)
COB
MHz
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
ORDERING INFORMATION
Package
Shipping†
EMT1DXV6T1G
SOT−563
(Pb−Free)
4000 / Tape & Reel
NSVEMT1DXV6T1G*
SOT−563
(Pb−Free)
4000 / Tape & Reel
EMT1DXV6T5G
SOT−563
(Pb−Free)
8000 / Tape & Reel
NSVEMT1DXV6T5G*
SOT−563
(Pb−Free)
8000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
http://onsemi.com
2
EMT1DXV6
TYPICAL CHARACTERISTICS
1000
VCE = 10 V
120
90
300 mA
250
200
60
150
IB = 50 mA
0
3
6
12
9
10
0.1
15
10
100
IC, COLLECTOR CURRENT (mA)
Figure 1. IC − VCE
Figure 2. DC Current Gain
900
TA = 25°C
800
COLLECTOR VOLTAGE (mV)
VCE , COLLECTOR‐EMITTER VOLTAGE (V)
1
VCE, COLLECTOR VOLTAGE (V)
2
1.5
1
0.5
700
600
500
400
300
TA = 25°C
VCE = 5 V
200
100
0
0.01
0.1
1
10
0
0.2
100
1
5
10
20
40
60
80
IC, COLLECTOR CURRENT (mA)
Figure 3. Collector Saturation Region
Figure 4. On Voltage
13
14
12
12
11
10
9
8
7
6
0.5
IB, BASE CURRENT (mA)
Cob, CAPACITANCE (pF)
Cib, INPUT CAPACITANCE (pF)
TA = - 25°C
100
100
30
0
TA = 25°C
TA = 75°C
DC CURRENT GAIN
IC, COLLECTOR CURRENT (mA)
TA = 25°C
100
150 200
10
8
6
4
2
0
1
2
3
0
4
0
VEB (V)
10
20
VCB (V)
Figure 5. Capacitance
Figure 6. Capacitance
http://onsemi.com
3
30
40
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A
ISSUE H
6
1
SCALE 4:1
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT−563, 6 LEAD
DATE 26 JAN 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SOT−563, 6 LEAD
CASE 463A
ISSUE H
DATE 26 JAN 2021
GENERIC
MARKING DIAGRAM*
XX MG
1
XX = Specific Device Code
M = Month Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT−563, 6 LEAD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
◊
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
