EMZ1DXV6T1

EMZ1DXV6T1, EMZ1DXV6T5 Dual General Purpose Transistors NPN/PNP Dual (Complementary) http://onsemi.com This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications. (3) (2) (1) Features Q1 • Lead−Free Solder Plating • Low VCE(SAT), t0.5 V • These are Pb−Free Devices Q2 (4) (5) (6) MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage Rating VCEO −60 V Collector −Base Voltage VCBO −50 V Emitter −Base Voltage VEBO −6.0 V IC −100 mAdc Symbol Max Collector Current − Continuous Total Device Dissipation TA = 25°C Derate above 25°C Characteristic (Both Junctions Heated) Unit PD mW 357 (Note 1) 2.9 (Note 1) mW/°C RqJA 350 (Note 1) °C/W Symbol Max Unit Thermal Resistance, Junction-to-Ambient Total Device Dissipation TA = 25°C Derate above 25°C PD 3Z M G G mW/°C RqJA 250 (Note 1) °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad. April, 2006 − Rev. 1 MARKING DIAGRAM mW 500 (Note 1) 4.0 (Note 1) Thermal Resistance, Junction-to-Ambient © Semiconductor Components Industries, LLC, 2006 1 SOT−563 CASE 463A STYLE 1 THERMAL CHARACTERISTICS Characteristic (One Junction Heated) 6 1 3Z = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: EMZ1DXV6/D EMZ1DXV6T1, EMZ1DXV6T5 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Min Typ Max Unit Collector−Base Breakdown Voltage (IC = −50 mAdc, IE = 0) V(BR)CBO −60 − − Vdc Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) V(BR)CEO −50 − − Vdc Emitter−Base Breakdown Voltage (IE = −50 mAdc, IE = 0) V(BR)EBO −6.0 − − Vdc Collector−Base Cutoff Current (VCB = −30 Vdc, IE = 0) ICBO − − −0.5 nA Emitter−Base Cutoff Current (VEB = −5.0 Vdc, IB = 0) IEBO − − −0.5 mA − − −0.5 120 − 560 − 140 − COB − 3.5 − pF Collector-Base Breakdown Voltage (IC = 50 mAdc, IE = 0) V(BR)CBO 60 − − Vdc Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 50 − − Vdc Emitter-Base Breakdown Voltage (IE = 50 mAdc, IE = 0) V(BR)EBO 7.0 − − Vdc Collector-Base Cutoff Current (VCB = 60 Vdc, IE = 0) ICBO − − 0.5 mA Emitter-Base Cutoff Current (VEB = 7.0 Vdc, IB = 0) IEBO − − 0.5 mA − − 0.4 120 − 560 fT − 180 − MHz COB − 2.0 − pF Q1: PNP Collector−Emitter Saturation Voltage (Note 2) (IC = −50 mAdc, IB = −5.0 mAdc) VCE(sat) DC Current Gain (Note 2) (VCE = −6.0 Vdc, IC = −1.0 mAdc) hFE Transition Frequency (VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz) Vdc − fT Output Capacitance (VCB = −12 Vdc, IE = 0 Adc, f = 1 MHz) MHz Q2: NPN Collector-Emitter Saturation Voltage (Note 3) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) DC Current Gain (Note 3) (VCE = 6.0 Vdc, IC = 1.0 mAdc) Vdc hFE Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz) Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1 MHz) − 2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. 3. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. ORDERING INFORMATION Package Shipping † EMZ1DXV6T1 SOT−563* 4000 Units / Tape & Reel EMZ1DXV6T1G SOT−563* 4000 Units / Tape & Reel EMZ1DXV6T5 SOT−563* 8000 Units / Tape & Reel EMZ1DXV6T5G SOT−563* 8000 Units / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. http://onsemi.com 2 EMZ1DXV6T1, EMZ1DXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS − Q1, PNP 120 VCE , COLLECTOR-EMITTER VOLTAGE (V) 300 mA 250 200 60 150 IB = 50 mA 0 3 6 9 12 10 0.1 15 1 10 100 VCE, COLLECTOR VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Figure 1. IC − VCE Figure 2. DC Current Gain 2 900 TA = 25°C 800 1.5 1 0.5 700 600 500 400 300 TA = 25°C VCE = 5 V 200 100 0 0.01 0.1 1 10 0 0.2 100 1 5 10 20 40 60 80 IC, COLLECTOR CURRENT (mA) Figure 3. Collector Saturation Region Figure 4. On Voltage 13 14 12 12 11 10 9 8 7 6 0.5 IB, BASE CURRENT (mA) C ob, CAPACITANCE (pF) Cib, INPUT CAPACITANCE (pF) TA = − 25°C 100 100 30 0 DC CURRENT GAIN 90 VCE = 10 V TA = 25°C TA = 75°C COLLECTOR VOLTAGE (mV) IC, COLLECTOR CURRENT (mA) 1000 TA = 25°C 100 150 200 10 8 6 4 2 0 1 2 3 0 4 0 VEB (V) 10 20 VCB (V) Figure 5. Capacitance Figure 6. Capacitance http://onsemi.com 3 30 40 EMZ1DXV6T1, EMZ1DXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS − Q2, NPN 1000 160 mA TA = 25°C 50 140 mA 120 mA 40 100 mA 30 80 mA 20 60 mA 10 IB = 20 mA TA = − 25°C 100 40 mA 0 0 2 4 6 VCE, COLLECTOR VOLTAGE (V) 10 0.1 8 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 2. DC Current Gain 2 900 TA = 25°C 800 COLLECTOR VOLTAGE (mV) VCE , COLLECTOR-EMITTER VOLTAGE (V) Figure 1. IC − VCE 1.5 1 0.5 700 600 500 400 TA = 25°C VCE = 5 V 300 200 100 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 0 0.2 100 1 5 10 20 40 60 80 100 150 200 Figure 4. On Voltage 20 7 6 C ob, CAPACITANCE (pF) 18 16 14 12 10 0.5 IC, COLLECTOR CURRENT (mA) Figure 3. Collector Saturation Region Cib, INPUT CAPACITANCE (pF) VCE = 10 V TA = 25°C TA = 75°C DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) 60 5 4 3 2 0 1 2 3 1 4 0 10 20 VEB (V) VCB (V) Figure 5. Capacitance Figure 6. Capacitance http://onsemi.com 4 30 40 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A ISSUE H 6 1 SCALE 4:1 DOCUMENT NUMBER: DESCRIPTION: 98AON11126D SOT−563, 6 LEAD DATE 26 JAN 2021 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOT−563, 6 LEAD CASE 463A ISSUE H DATE 26 JAN 2021 GENERIC MARKING DIAGRAM* XX MG 1 XX = Specific Device Code M = Month Code G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON11126D SOT−563, 6 LEAD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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