ES1A-ES1D
1.0 A Ultra Fast Recovery
Rectifier
Features
•
•
•
•
•
•
•
For Surface Mount Applications
Glass Passivated Junction
Low Profile Package
Easy Pick and Place
Built−in Strain Relief
Superfast Recovery Times for High Efficiency
This Device is Pb−Free and is RoHS Compliant
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Applications
• This Product is General Usage and Suitable for Many Different
Applications
SMA
CASE 403AE
(COLOR BAND DENOTES CATHODE)
MARKING DIAGRAM
$Y&Z&3
ES1X
$Y
&Z
&3
ES1X
X
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Specific Device Code
= A/B/C/D
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2010
July, 2019 − Rev. 4
1
Publication Order Number:
ES1D/D
ES1A−ES1D
ABSOLUTE MAXIMUM RATINGS TA = 25°C Unless Otherwise Noted
Value
Parameter
Symbol
1A
1B
1C
1D
Units
50
100
150
200
V
VRRM
Maximum Repetitive Reverse Voltage
IF(AV)
Average Rectified Forward Current, @ TA = 120°C
1.0
A
IFSM
Non−repetitive Peak Forward Surge Current
8.3 ms Single Half−Sine−Wave
30
A
Tstg
Storage Temperature Range
−50 to +150
°C
TJm
Operating Junction Temperature
−50 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
PD
Parameter
Power Dissipation
Value
Units
1.47
W
RθJA
Thermal Resistance, Junction to Ambient*
85
°C/W
RqJL
Thermal Resistance, Junction to Lead*
35
°C/W
*Device mounted on FR−4 PCB 0.013 mm.
ELECTRICAL CHARACTERISTICS TJ = 25°C Unless Otherwise Noted
Device
Symbol
1A
Parameter
VF
Forward Voltage @ 1.0 A
trr
Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A
IR
Reverse Current
TA = 25_C
TA = 100_C
CT
Total Capacitance
VR = 4.0 V, f = 1.0 MHz
@ rated VR
1B
1C
1D
Units
0.92
V
15
ns
mA
5.0
100
7.0
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION TBD
Device Marking
Device
Package
Quantity†
ESD1
ESD1
SMA
7500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
ES1A−ES1D
10
1.5
1.25
Forward Current, IF [A]
Average Rectified Forward Current, IF [A]
TYPICAL CHARACTERISTICS
1
0.75
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED
ON 0.2 x 0.2”
(5.0 x 5.0 mm)
COPPER PAD AREAS
0.5
0.2 5
0
0
25
50
75
100
125
150
1
0.1
0.01
0.001
175
TA = 25°C
Pulse Width = 300 ms
2% Duty Cycle
0.6
0.4
Ambient Temperature [5C]
1.4
1.2
1000
30
Reverse Current, IR [mA]
25
20
15
10
100
TA = 125°C
10
TA = 75°C
1
5
TA = 25°C
1
2
5
10
20
50
0.1
100
0
20
Figure 3. Non−Repetitive Surge Current
60
80
100
120
140
Figure 4. Reverse Current vs Reverse Voltage
14
12
10
8
6
4
2
0
0.1
40
Percent of Rated Peak Reverse Voltage [%]
Number of Cycles at 60 Hz
Total Capacitance, CT [pF]
0
1
Figure 2. Forward Voltage Characteristics
Figure 1. Forward Current Derating Curve
Peak Forward Surge Current, IFSM [A]
0.8
Forward Voltage, VF [V]
1
10
Reverse Voltage, VR [V]
Figure 5. Total Capacitance
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3
100
ES1A−ES1D
TYPICAL CHARACTERISTICS (continued)
50 W
NONINDUCTIVE
50 W
NONINDUCTIVE
+0.5 A
(−)
DUT
0
Pulse
Generator
(Note 2)
50 V
(approx)
50 W
NONINDUCTIVE
trr
OSCILLOSCOPE
(Note 1)
−0.25 A
(+)
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 MW 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 W.
−1.0 A
1.0 cm
SET TIME BASE FOR
5/ 10 ns/ cm
Figure 6. Reverse Recovery Time Characterstic and Test Circuit Diagram
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SMA
CASE 403AE
ISSUE O
B
B
5.60
4.80
0.13 M
C
B
DATE 31 AUG 2016
A
2.65
2.95
2.50
1.65
1.20
B
1.75
4.30
B
A
4.75
4.00
LAND PATTERN RECOMMENDATION
TOP VIEW
2.50 MAX
A
2.20
1.90
B
C
0.203
0.050
2.05
1.95
NOTES:
0.30
0.05
0.13 M
C
SIDE VIEW
8°
0°
B
A
A. EXCEPT WHERE NOTED, CONFORMS
TO JEDEC DO214 VARIATION AC.
B DOES NOT COMPLY JEDEC STANDARD
VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF
BURRS, MOLD FLASH AND TIE BAR
PROTRUSIONS.
E. DIMENSIONS AND TOLERANCE AS
PER ASME Y14.5−2009.
E. LAND PATTERN STD. DIOM5025X231M
R0.15 4X
GAGE PLANE
0.45
8°
0°
0.41
0.15
1.52
0.75
DETAIL A
SCALE 20 : 1
DOCUMENT NUMBER:
DESCRIPTION:
98AON13440G
SMA
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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© Semiconductor Components Industries, LLC, 2019
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TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
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1
Europe, Middle East and Africa Technical Support:
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For additional information, please contact your local Sales Representative
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Authorized Distributor
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ES1A ES1B ES1C ES1D