ES1F-ES1J
Fast Rectifiers
Features
•
•
•
•
•
•
For Surface Mount Applications
Glass Passivated Junction
Low Profile Package
Easy Pick and Place
Built-in Strain Relief
Superfast Recovery Times for High Efficiency
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ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
SMA (DO−214AC)
Color Band Denotes Cathode
CASE 403AE
Value
Symbol
Parameter
ES1F
ES1G
ES1H
ES1J
Unit
300
400
500
600
V
VRRM
Maximum Repetitive
Reverse Voltage
IF(AV)
Average Rectified
Forward Current
1.0
A
IFSM
Non-repetitive Peak
Forward Surge Current
8.3 ms Single
Half-Sine-Wave
(JEDEC method)
30
A
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
Range
−55 to 150
°C
1.47
W
PD
ORDERING INFORMATION
Power Dissipation
Package
Shipping†
ES1F
SMA
(Pb−Free)
7500 /
Tape & Reel
ES1G
SMA
(Pb−Free)
7500 /
Tape & Reel
ES1H
SMA
(Pb−Free)
7500 /
Tape & Reel
ES1J
SMA
(Pb−Free)
7500 /
Tape & Reel
Device
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
THERMAL CHARACTERISTICS
Symbol
Characteristics
Value
Unit
RθJA
Thermal Resistance, Junction to Ambient (Note 1)
85
°C/W
RθJL
Thermal Resistance, Junction to Lead (Note 1)
35
°C/W
1. P. C. B mounted on 0.2″ × 0.2″ (5 × 5 mm) copper Pad Area.
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise noted)
Value
ES1F
Characteristics
Symbol
VF
Maximum Forward Voltage @ IF = 1.0 A
Trr
Maximum Reverse Recovery Time,
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A
IR
Maximum Reverse Current @ rated VR
TA = 25_C
TA = 100_C
Cj
Typical Junction Capacitance, VR = 4.0 V, f = 1.0 MHz
ES1G
ES1H
1.3
ES1J
1.7
35
V
ns
mA
5.0
100
10.0
Unit
8.0
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
© Semiconductor Components Industries, LLC, 2007
October, 2018 − Rev. 1
1
Publication Order Number:
ES1J/D
ES1F−ES1J
TYPICAL PERFORMANCE CHARACTERISTICS
1.0
RESISTIVEOR
INDUCTIVELOAD
0.2 x 0.2″ (5.0 x 5.0 mm)
COPPERPADAREAS
0.8
0.6
0.4
0.2
0
80
90
100
30
Peak Forward Surge Current (A)
Average Forward Current (A)
1.2
110
120
130
140
8.3 ms Single Half Sine Wave
(JEDEC Method) at TL = 120°C
25
20
15
10
5
1
150
1
10
Figure 2. Maximum Non-repetitive Peak Forward
Surge Current
2.5
1000
2
100
TA = −40°C
Instantaneous Reverse Current (mA)
VF − Forward Voltage (V)
Figure 1. Maximum Forward Current Derating
Curve
TA = −55°C
TA = 25°C
1.5
1
0.5
TA = 85°C TA = 125°C
0
0.01
1
10
Junction Capacitance (pF)
ES1F−G
10
Tj = 25°C
f = 1.0 MHz
Vsig = 50 mVp−p
ES1H−J
6.0
4.0
2.0
0
1
1
TJ = 25°C
0.1
10
0
20
40
60
80
100
120
140
Figure 4. Typical Reverse Characteristics
14
0
TJ = 85°C
Percent of Rated Peak Reverse Voltage (%)
IF − Forward Current (A)
8.0
10
TA = 150°C
Figure 3. Forward Current vs. Forward Voltage
12
TJ = 125°C
0.01
0.1
100
Number of Cycles at 60 Hz
Lead Temperature (5C)
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
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2
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SMA
CASE 403AE
ISSUE O
DATE 31 AUG 2016
B
B
5.60
4.80
0.13 M
C
B
A
2.65
2.95
2.50
1.65
1.20
B
1.75
4.30
B
A
4.75
4.00
LAND PATTERN RECOMMENDATION
TOP VIEW
2.50 MAX
A
2.20
1.90
B
C
0.203
0.050
2.05
1.95
NOTES:
0.30
0.05
0.13 M
C
B
A
SIDE VIEW
8°
0°
A. EXCEPT WHERE NOTED, CONFORMS
TO JEDEC DO214 VARIATION AC.
B DOES NOT COMPLY JEDEC STANDARD
VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF
BURRS, MOLD FLASH AND TIE BAR
PROTRUSIONS.
E. DIMENSIONS AND TOLERANCE AS
PER ASME Y14.5−2009.
E. LAND PATTERN STD. DIOM5025X231M
R0.15 4X
GAGE PLANE
0.45
0.41
0.15
1.52
0.75
8°
0°
DETAIL A
SCALE 20 : 1
DOCUMENT NUMBER:
STATUS:
98AON13440G
ON SEMICONDUCTOR STANDARD
NEW STANDARD:
© Semiconductor Components Industries, LLC, 2002
October, DESCRIPTION:
2002 − Rev. 0
SMA
http://onsemi.com
1
Electronic versions are uncontrolled except when
accessed directly from the Document Repository. Printed
versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
Case Outline Number:
PAGE 1 OFXXX
2
DOCUMENT NUMBER:
98AON13440G
PAGE 2 OF 2
ISSUE
O
REVISION
RELEASED FOR PRODUCTION FROM FAIRCHILD DO214AC TO ON
SEMICONDUCTOR. REQ. BY B. NG.
DATE
31 AUG 2016
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Case Outline Number:
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