ES3C

DATA SHEET www.onsemi.com Fast Rectifiers ES3A - ES3J 2 Anode 1 Cathode Features • • • • • • • For Surface Mount Applications Glass−Passivated Junction Low−Profile Package Easy Pick and Place Built−in Strain Relief Superfast Recovery Times for High Efficiency These Devices are Pb−Free and Halid Free 1 2 SMC CASE 403AG MARKING DIAGRAM ON ZXYY DDDD Z X YY DDDD = Assembly Plant Code = Last Digit of Year of Manufacture = Weekly Code of Manufacture = Specific Device Code ORDERING INFORMATION Part Number Device Code Marking Package Shipping† ES3A ES3A DO−214AB (SMC) (Pb−Free) 3000 / Tape & Reel ES3B ES3B ES3C ES3C 3000 / Tape & Reel 3000 / Tape & Reel ES3D ES3D 3000 / Tape & Reel ES3J ES3J 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1999 September, 2021 − Rev. 3 1 Publication Order Number: ES3J/D ES3A − ES3J ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Value Parameter Symbol ES3A ES3B ES3C ES3D ES3J Unit 50 100 150 200 600 V VRRM Maximum Repetitive Reverse Voltage IF(AV) Average Rectified Forward Current, .375” Lead Length TA = 75°C 3.0 A IFSM Non−Repetitive Peak Forward Surge Current 8.3 ms Single Half−Sine Wave 100 A TSTG Storage Temperature Range −55 to +150 °C Operating Junction Temperature −55 to +150 °C TJ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol PD RqJA RqJL Power Dissipation Value Unit 1.66 W °C/W Thermal Resistance, Junction to Ambient (Note 1) Maximum Land Pattern: 16 x 16 mm 47 Minimum Land Pattern: 2.6 x 3.2 mm 125 Thermal Resistance, Junction to Lead (Note 1) Maximum Land Pattern: 16 x 16 mm 12 Minimum Land Pattern: 2.6 x 3.2 mm 16 °C/W 1. Device mounted on FR−4 PCB 0.013 mm. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Value Symbol Parameter ES3J Unit 0.95 1.70 V Typ. 20 35 ns Max. 30 45 Conditions VF Maximum Forward Voltage IF = 3.0 A trr Reverse Recovery Time IF = 0.5 A, IR = 1.0 A IRR = 0.25 A ES3A ES3B ES3C IR Maximum Reverse Current at Rated VR TA = 25°C 10 TA = 100°C 500 CT Total Capacitance VR = 4.0 V, f = 1.0 MHz 45 ES3D mA pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 ES3A − ES3J 3.5 100 3 IF, Forward Current (A) IF, Average Rectified Forward Current (A) TYPICAL PERFORMANCE CHARACTERISTICS 2.5 Single Phase Half Wave 60 Hz Resistive OR Inductive Load .375” (9.0 mm) Lead Lengths 2 1.5 1 0.5 0 0 25 50 75 100 125 150 ES3J 1 0.1 TA = 25°C Pulse Width = 300 ms 2% Duty Cycle 0.01 0.4 175 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Ambient Temperature (°C) VF, Forward Voltage Drop (V) Figure 1. Forward Current Derating Curve Figure 2. Forward Voltage Characteristics 1000 100 90 IR, Reverse Current (mA) CT, Total Capacitance (pF) ES3A−ES3D 10 80 70 60 50 40 30 20 10 0 0.1 0.5 5 1 10 20 50 100 TA = 75°C 10 1 0.1 500 TA = 100°C 100 TA = 25°C 0 Figure 3. Total Capacitance 50 V (approx) 50 W NONINDUCTIVE 60 80 100 120 140 Figure 4. Reverse Current vs. Reverse Voltage trr +0.5 A 50 W NONINDUCTIVE DUT 40 Percent of Rated Peak Reverse Voltage (%) VR, Reverse Voltage (V) 50 W NONINDUCTIVE 20 0 (−) PULSE GENERATOR (Note 2) OSCILLOSCOPE (Note 2) −0.25 A (+) −1.0 A 1.0 cm NOTES: 2. Rise time = 7.0 ns max; Input impedance = 1.0 MW 22 pF. 3. Rise time = 10 ns max; Source impedance = 50 W. SET TIME BASE FOR 5 / 10 ns / cm Figure 5. Reverse Recovery Time Characteristics and Test Circuit Diagram www.onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMC CASE 403AG ISSUE O DATE 31 AUG 2016 8.15 7.75 B 1.96 6.25 5.55 3.27 2.75 3.39 B 6.81 0.13 M 7.15 6.60 A C B TOP VIEW 2.45 1.90 A 0.203 0.050 0.13 M C B B A A. EXCEPT WHERE NOTED, CONFORMS TO JEDEC DO−214, VARIATION AB B C. D. DOES NOT COMPLY TO JEDEC STD. VALUE ALL DIMENSIONS ARE IN MILLIMETERS DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR PROTRUSIONS. DIMENSIONS AND TOLERANCING AS PER ASME Y14.5−2009 LAND PATTERN STANDARD: DIOM7957X241M DOCUMENT NUMBER: DESCRIPTION: 0.45 1.60 0.75 8° 0° DETAIL A SCALE 2:1 NOTES: F. 0.41 0.15 SEATING PLANE SIDE VIEW E. 8° 0° GAGE PLANE C 4.70 4.40 LAND PATTERN RECOMMENDATION R0.15 4X 2.65 MAX 0.30 0.05 A 98AON13442G SMC Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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