ESD5.0ST5G

mESD3.3ST5G SERIES ESD Protection Diodes In Ultra Small SOD-723 Package The mESD Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in cellular phones, MP3 players, digital cameras and many other portable applications where board space comes at a premium. Specification Features: http://onsemi.com 1 PIN 1. CATHODE 2. ANODE 2 • Small Body Outline Dimensions: • • • • • • • • 0.055″ x 0.024″ (1.40 mm x 0.60 mm) Low Body Height: 0.020″ (0.5 mm) Stand-off Voltage: 3.3 V - 12 V Low Leakage Response Time is Typically < 1 ns ESD Rating of Class 3 (> 16 kV) per Human Body Model IEC61000-4-2 Level 4 ESD Protection IEC61000-4-4 Level 4 EFT Protection These are Pb-Free Devices MARKING DIAGRAM XX MG G SOD-723 CASE 509AA Mechanical Characteristics: CASE: Void‐free, transfer‐molded, thermosetting plastic XX = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) Epoxy Meets UL 94 V-0 LEAD FINISH: 100% Matte Sn (Tin) MOUNTING POSITION: Any QUALIFIED MAX REFLOW TEMPERATURE: 260°C ORDERING INFORMATION Device mESDxxST5G Package SOD-723 (Pb-Free) Shipping† 8000/Tape & Reel Device Meets MSL 1 Requirements MAXIMUM RATINGS Rating IEC 61000-4-2 (ESD) IEC 61000-4-4 (EFT) ESD Voltage Per Human Body Model Per Machine Model ⎪ PD TJ, Tstg TL Air Contact Symbol Value ±30 ±30 40 16 400 150 -55 to +150 260 Unit kV A kV V mW °C °C †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the table on page 2 of this data sheet. Total Power Dissipation on FR-5 Board (Note 1) @ TA = 25°C Junction and Storage Temperature Range Lead Solder Temperature - Maximum (10 Second Duration) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 x 0.75 x 0.62 in. © Semiconductor Components Industries, LLC, 2008 1 February, 2008 - Rev. 3 Publication Order Number: UESD3.3ST5G/D mESD3.3ST5G SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol IPP VC VRWM IR VBR IT IF VF Ppk C Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Forward Current Forward Voltage @ IF Peak Power Dissipation Max. Capacitance @VR = 0 and f = 1 MHz IPP VC VBR VRWM IR VF IT V IF I Uni-Directional TVS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA for all types) VRWM (V) Max 3.3 5.0 12 IR (mA) @ VRWM Max 2.5 1.0 1.0 VBR (V) @ IT (Note 2) Min 5.0 6.2 13.5 IT mA 1.0 1.0 1.0 VC (V) @ Max IPP† Max 10.9 13.3 23.7 IPP (A)† Max 10.4 8.8 5.4 Ppk (W)† Max 113 117 128 C (pF) Typ 80 65 30 Device* mESD3.3ST5G mESD5.0ST5G mESD12ST5G Device Marking E0 E2 E3 *Other voltages available upon request. †Surge current waveform per Figure 1. 2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C. 100 % OF PEAK PULSE CURRENT 90 80 70 60 50 40 30 20 10 0 0 tr PEAK VALUE IRSM @ 8 ms PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms HALF VALUE IRSM/2 @ 20 ms tP 20 40 t, TIME (ms) 60 80 Figure 1. 8 x 20 ms Pulse Waveform http://onsemi.com 2 mESD3.3ST5G SERIES TYPICAL CHARACTERISTICS BREAKDOWN VOLTAGE (VOLTS) (VZ @ IZ) 7.4 7.3 7.2 7.1 7.0 6.9 6.8 6.7 6.6 6.5 6.4 6.3 - 55 + 25 TEMPERATURE (°C) + 150 mESDxxST5G IR (nA) 20 18 16 14 12 10 8 6 4 2 0 -55 + 25 TEMPERATURE (°C) + 150 mESDxxST5G Figure 2. Typical Breakdown Voltage versus Temperature Figure 3. Typical Leakage Current versus Temperature Figure 4. Positive 8 kV contact per IEC 6100-4-2 - mESD5.0ST5G Figure 5. Negative 8 kV contact per IEC 61000-4-2 - mESD5.0ST5G http://onsemi.com 3 mESD3.3ST5G SERIES PACKAGE DIMENSIONS SOD-723 CASE 509AA-01 ISSUE O D -X-YE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. MILLIMETERS INCHES MIN NOM MAX MIN NOM MAX 0.49 0.52 0.55 0.019 0.020 0.022 0.25 0.28 0.32 0.0098 0.011 0.013 0.08 0.12 0.15 0.0032 0.0047 0.0059 0.95 1.00 1.05 0.037 0.039 0.041 0.55 0.60 0.65 0.022 0.024 0.026 1.35 1.40 1.45 0.053 0.055 0.057 0.15 0.20 0.25 0.006 0.0079 0.010 b 2X 0.08 (0.0032) X Y A DIM A b c D E HE L c L HE SOLDERING FOOTPRINT* 1.1 0.043 0.45 0.0177 0.50 0.0197 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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