ESD5581
ESD Protection Diode
Micro−Packaged Diodes for ESD Protection
The ESD5581 is designed to protect voltage sensitive components
that require low capacitance from ESD and transient voltage events.
Excellent clamping capability, low capacitance, low leakage, and fast
response time, make these parts ideal for ESD protection on designs
where board space is at a premium.
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Features
Low Clamping Voltage
Small Body Outline Dimensions: 0.62 mm x 0.32 mm
Low Body Height: 0.3 mm
Stand−off Voltage: 5 V
IEC61000−4−2 Level 4 ESD Protection
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MARKING
DIAGRAM
PIN 1
X3DFN2
CASE 152AF
Typical Applications
5
M
• mSD Card Protection
• Audio Line Protection
• GPIO
Rating
Symbol
Contact
Air
Value
Unit
±30
±30
kV
Total Power Dissipation on FR−5 Board
(Note 1) @ TA = 25°C
Thermal Resistance, Junction−to−Ambient
°PD°
250
mW
RqJA
400
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
TL
260
°C
Lead Solder Temperature − Maximum
(10 Second Duration)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
M
= Specific Device Code
= Date Code
X2DFN2
CASE 714AB
MAXIMUM RATINGS
IEC 61000−4−2 (ESD)
5
•
•
•
•
•
•
2
1
YC M
YC = Specific Device Code
M = Date Code
ORDERING INFORMATION
Package
Shipping†
ESD5581MXT5G
X3DFN2
(Pb−Free)
10000 / Tape &
Reel
ESD5581N2T5G
X2DFN2
(Pb−Free)
8000 / Tape &
Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
See Application Note AND8308/D for further description of survivability specs.
© Semiconductor Components Industries, LLC, 2017
September, 2018 − Rev. 8
1
Publication Order Number:
ESD5581/D
ESD5581
ELECTRICAL CHARACTERISTICS
I
(TA = 25°C unless otherwise noted)
IPP
Parameter
Symbol
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
IT
VC VBR VRWM IR
IR VRWM VBR VC
IT
Working Peak Reverse Voltage
V
Maximum Reverse Leakage Current @ VRWM
VBR
IT
Breakdown Voltage @ IT
IPP
Test Current
Bi−Directional
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Reverse Working Voltage
Conditions
Min
Typ
VRWM
Breakdown Voltage (Note 2)
VBR
IT = 1 mA
5.2
6.2
Max
Unit
5.0
V
7.5
V
Reverse Leakage Current
IR
VRWM = 5 V
0.1
mA
Clamping Voltage (Note 3)
VC
IPP = 1 A
8.0
V
Clamping Voltage (Note 3)
VC
IPP = 4 A
10
V
Clamping Voltage (Note 3)
VC
IPP = 6 A
12
V
Clamping Voltage (Note 4)
VC
IEC61000−4−2, ±8 kV Contact
Peak Pulse Current (Note 3)
IPP
tP = 8/20 ms
VC
IPP = 16 A
Dynamic Resistance
RDYN
TLP Pulse
Junction Capacitance
CJ
Clamping Voltage
TLP (Note 5)
10.3
See Figures 1 & 2
V
6.0
A
IEC 61000−4−2 Level 4 equivalent
(±8 kV Contact, ±15 kV Air)
11
V
0.22
W
VR = 0 V, f = 1 MHz
10
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.
3. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−5 waveform. (See Figure 12)
4. For test procedure see Figure 10 and application note AND8307/D.
5. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z0 = 50 W, tp = 100 ns, tr = 4 ns, averaging window; t1 = 30 ns to t2 = 60 ns.
60
10
50
0
40
−10
VOLTAGE (V)
VOLTAGE (V)
TYPICAL CHARACTERISTICS
30
20
−20
−30
10
−40
0
−50
−10
−20
0
20
40
60
80
100
120
−60
−20
140
TIME (ns)
0
20
40
60
80
100
120
TIME (ns)
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2
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2
140
ESD5581
TYPICAL CHARACTERISTICS
9
1.E−03
8
1.E−04
7
1.E−05
6
1.E−06
5
I1 (A)
C (pF)
1.E−02
1.E−07
4
1.E−08
3
1.E−09
2
1.E−10
1
1.E−11
−8
−6
−4
−2
0
2
6
4
0
−5
8
−4
−3
−2
−1
V1 (V)
0
1
2
3
4
5
18
20
VBias (V)
Figure 3. IV Characteristics
Figure 4. CV Characteristics
16
CAPACITANCE (pF)
14
12
10
8
6
4
2
0
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
FREQUENCY (GHz)
20
−20
18
−18
16
−16
TLP CURRENT (A)
TLP CURRENT (A)
Figure 5. Capacitance over Frequency
14
12
10
8
6
−14
−12
−10
−8
−6
4
−4
2
−2
0
0
2
4
6
8
10
12
14
16
18
0
0
20
2
4
6
8
10
12
14
16
VC, VOLTAGE (V)
VC, VOLTAGE (V)
Figure 6. Positive TLP I−V Curve
Figure 7. Negative TLP I−V Curve
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3
ESD5581
12
12
10
10
8
8
VC @ IPK (V)
VC @ IPK (V)
TYPICAL CHARACTERISTICS
6
4
2
0
6
4
2
0
1
2
3
4
5
6
7
0
8
0
1
2
3
4
5
6
7
IPK (A)
IPK (A)
Figure 8. Pin 1−2 Clamping Voltage vs. Peak
Pulse Current (tp = 8/20 ms)
Figure 9. Pin 2−1 Clamping Voltage vs. Peak
Pulse Current (tp = 8/20 ms)
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4
8
ESD5581
IEC61000−4−2 Waveform
IEC 61000−4−2 Spec.
Ipeak
Level
Test Voltage (kV)
First Peak
Current
(A)
Current at
30 ns (A)
Current at
60 ns (A)
1
2
7.5
4
2
2
4
15
8
4
3
6
22.5
12
6
4
8
30
16
8
100%
90%
I @ 30 ns
I @ 60 ns
10%
tP = 0.7 ns to 1 ns
Figure 10. IEC61000−4−2 Spec
Oscilloscope
ESD Gun
50 W
Cable
50 W
Figure 11. Diagram of ESD Test Setup
ESD Voltage Clamping
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
% OF PEAK PULSE CURRENT
100
PEAK VALUE IRSM @ 8 ms
tr
90
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
80
70
60
HALF VALUE IRSM/2 @ 20 ms
50
40
30
tP
20
10
0
0
20
40
t, TIME (ms)
60
Figure 12. 8 X 20 ms Pulse Waveform
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5
80
ESD5581
Transmission Line Pulse (TLP) Measurement
L
Transmission Line Pulse (TLP) provides current versus
voltage (I−V) curves in which each data point is obtained
from a 100 ns long rectangular pulse from a charged
transmission line. A simplified schematic of a typical TLP
system is shown in Figure 13. TLP I−V curves of ESD
protection devices accurately demonstrate the product’s
ESD capability because the 10s of amps current levels and
under 100 ns time scale match those of an ESD event. This
is illustrated in Figure 14 where an 8 kV IEC 61000−4−2
current waveform is compared with TLP current pulses at
8 A and 16 A. A TLP I−V curve shows the voltage at which
the device turns on as well as how well the device clamps
voltage over a range of current levels. For more information
on TLP requirements, and how to interrupt them, please
refer to AND9007/D.
50 W Coax
Cable
S Attenuator
÷
50 W Coax
Cable
10 MW
IM
VM
DUT
VC
Oscilloscope
Figure 13. Simplified Schematic of a Typical TLP
System
Figure 14. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
X3DFN2, 0.62x0.32, 0.355P, (0201)
CASE 152AF
ISSUE A
DATE 17 FEB 2015
SCALE 8:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
A B
D
PIN 1
INDICATOR
(OPTIONAL)
DIM
A
A1
b
D
E
e
L2
E
TOP VIEW
0.05 C
A
2X
0.05 C
A1
SIDE VIEW
C
MILLIMETERS
MIN
MAX
0.25
0.33
−−−
0.05
0.22
0.28
0.58
0.66
0.28
0.36
0.355 BSC
0.17
0.23
GENERIC
MARKING DIAGRAM*
SEATING
PLANE
PIN 1
XM
e
1
2X
0.05
M
2
2X
b
X = Specific Device Code
M = Date Code
0.05
L2
M
C A B
RECOMMENDED
MOUNTING FOOTPRINT*
C A B
BOTTOM VIEW
0.74
2X
0.30
1
2X
0.31
DIMENSIONS: MILLIMETERS
See Application Note AND8398/D for more mounting details
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON56472E
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
X3DFN2, 0.62X0.32, 0.355P, (0201)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
X2DFN2 1.0x0.6, 0.65P
CASE 714AB
ISSUE B
DATE 21 NOV 2017
SCALE 8:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. EXPOSED COPPER ALLOWED AS SHOWN.
0.10 C
A B
D
É
PIN 1
INDICATOR
E
DIM
A
A1
b
D
E
e
L
0.05 C
TOP VIEW
A
NOTE 3
0.10 C
0.10 C
A1
C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
SEATING
PLANE
XX M
e
b
e/2
MILLIMETERS
MIN
NOM MAX
0.34
0.37
0.40
−−−
0.03
0.05
0.45
0.50
0.55
0.95
1.00
1.05
0.55
0.60
0.65
0.65 BSC
0.20
0.25
0.30
0.05
M
XX = Specific Device Code
M = Date Code
C A B
RECOMMENDED
SOLDER FOOTPRINT*
1
2X
L
0.05
M
C A B
BOTTOM VIEW
1.20
2X
0.47
2X
0.60
PIN 1
DIMENSIONS: MILLIMETERS
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON98172F
X2DFN2 1.0X0.6, 0.65P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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