ESD5Z12T1G

ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series ESD Protection Diode Micro−Packaged Diodes for ESD Protection The ESD5Z Series is designed to protect voltage sensitive components from ESD and transient voltage events. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its small size, it is suited for use in cellular phones, portable devices, digital cameras, power supplies and many other portable applications. www.onsemi.com SOD−523 CASE 502 STYLE 1 Specification Features: • • • • • • • • • • 0.047″ x 0.032″ (1.20 mm x 0.80 mm) Low Body Height: 0.028″ (0.7 mm) Stand−off Voltage: 2.5 V − 12 V Peak Power up to 240 Watts @ 8 x 20 ms Pulse Low Leakage Response Time is Typically < 1 ns ESD Rating of Class 3 (> 16 kV) per Human Body Model IEC61000−4−2 Level 4 ESD Protection IEC61000−4−4 Level 4 EFT Protection SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant* Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic 1 Cathode 2 Anode MARKING DIAGRAM XX 1 M G • Low Clamping Voltage • Small Body Outline Dimensions: G 2 XX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Epoxy Meets UL 94 V−0 LEAD FINISH: 100% Matte Sn (Tin) MOUNTING POSITION: Any QUALIFIED MAX REFLOW TEMPERATURE: 260°C Device Meets MSL 1 Requirements Device Package Shipping† SZ/ESD5ZxxxT1G SOD−523 Pb−Free 3000 / Tape & Reel SZ/ESD5ZxxxT5G SOD−523 Pb−Free 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics tables starting on page 3 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 September, 2018 − Rev. 15 1 Publication Order Number: ESD5Z2.5T1/D ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series MAXIMUM RATINGS Rating Symbol Value IEC 61000−4−2 (ESD) Contact Air ±30 ±30 IEC 61000−4−4 (EFT) 40 ESD Voltage Per Human Body Model Per Machine Model 16 400 Total Power Dissipation on FR−4 Board (Note 1) @ TA = 25°C Junction and Storage Temperature Range Unit kV A kV V °PD° 500 mW TJ, Tstg −55 to +150 °C TL 260 °C Lead Solder Temperature − Maximum (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 printed circuit board, single−sided copper, mounting pad 1 cm2. See Application Note AND8308/D for further description of survivability specs. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IF Working Peak Reverse Voltage VC VBR VRWM Maximum Reverse Leakage Current @ VRWM IR VF IT Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF Ppk Peak Power Dissipation C I Parameter IPP Uni−Directional Max. Capacitance @VR = 0 and f = 1 MHz *See Application Note AND8308/D for detailed explanations of datasheet parameters. www.onsemi.com 2 V ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA for all types) VRWM (V) IR (mA) @ VRWM VBR (V) @ IT (Note 2) IT VC (V) @ IPP = 5.0 A† VC (V) @ Max IPP† IPP (A)† Ppk (W)† C (pF) VC Per IEC61000−4−2 (Note 3) Device* Device Marking Max Max Min mA Typ Max Max Max Typ ESD5Z2.5T1G/T5G ZD 2.5 6.0 4.0 1.0 6.5 10.9 11.0 120 145 ESD5Z3.3T1G/T5G ZE 3.3 0.05 5.0 1.0 8.4 14.1 11.2 158 105 ESD5Z5.0T1G/T5G ZF 5.0 0.05 6.2 1.0 11.6 18.6 9.4 174 80 ESD5Z6.0T1G/T5G ZG 6.0 0.01 6.8 1.0 12.4 20.5 8.8 181 70 ESD5Z7.0T1G/T5G ZH 7.0 0.01 7.5 1.0 13.5 22.7 8.8 200 65 ESD5Z12T1G/T5G ZM 12 0.01 14.1 1.0 17 25 9.6 240 55 Figures 1 and 2 See Below (Note 4) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. * Includes SZ-prefix devices where applicable. †Surge current waveform per Figure 5. 2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C. 3. For test procedure see Figures 3 and 4 and Application Note AND8307/D. 4. ESD5Z5.0T1G shown below. Other voltages available upon request. Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV contact per IEC 61000−4−2 Figure 2. ESD Clamping Voltage Screenshot Negative 8 kV contact per IEC 61000−4−2 www.onsemi.com 3 ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series IEC61000−4−2 Waveform IEC 61000−4−2 Spec. Ipeak Level Test Voltage (kV) First Peak Current (A) Current at 30 ns (A) Current at 60 ns (A) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 100% 90% I @ 30 ns I @ 60 ns 10% tP = 0.7 ns to 1 ns Figure 3. IEC61000−4−2 Spec Oscilloscope ESD Gun 50 W Cable 50 W Figure 4. Diagram of ESD Test Setup The following is taken from Application Note AND8308/D − Interpretation of Datasheet Parameters for ESD Devices. systems such as cell phones or laptop computers it is not clearly defined in the spec how to specify a clamping voltage at the device level. ON Semiconductor has developed a way to examine the entire voltage waveform across the ESD protection diode over the time domain of an ESD pulse in the form of an oscilloscope screenshot, which can be found on the datasheets for all ESD protection diodes. For more information on how ON Semiconductor creates these screenshots and how to interpret them please refer to AND8307/D. ESD Voltage Clamping For sensitive circuit elements it is important to limit the voltage that an IC will be exposed to during an ESD event to as low a voltage as possible. The ESD clamping voltage is the voltage drop across the ESD protection diode during an ESD event per the IEC61000−4−2 waveform. Since the IEC61000−4−2 was written as a pass/fail spec for larger % OF PEAK PULSE CURRENT 100 PEAK VALUE IRSM @ 8 ms tr 90 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tP 20 10 0 0 20 40 t, TIME (ms) 60 Figure 5. 8 X 20 ms Pulse Waveform www.onsemi.com 4 80 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS 2 2 1 1 STYLE 1 STYLE 2 SOD−523 CASE 502−01 ISSUE E SCALE 4:1 −X− D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. −Y− E M 2 X Y DIM A b c D E HE L L2 TOP VIEW A c HE MILLIMETERS MIN NOM MAX 0.50 0.60 0.70 0.25 0.30 0.35 0.07 0.14 0.20 1.10 1.20 1.30 0.70 0.80 0.90 1.50 1.60 1.70 0.30 REF 0.15 0.20 0.25 GENERIC MARKING DIAGRAM* SIDE VIEW 2X XX L 1 XX 2 1 STYLE 1 2X XX M L2 RECOMMENDED SOLDERING FOOTPRINT* PACKAGE OUTLINE = Specific Device Code Date Code STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE 1.80 0.48 2 STYLE 2 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. BOTTOM VIEW 2X M b 0.08 1 M 2X DATE 28 SEP 2010 2X STYLE 2: NO POLARITY 0.40 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON11524D SOD−523 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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