ESD9M5.0ST5G

ESD9M5.0ST5G ESD Protection Diode Ultra−Low Capacitance The ESD9M Series is designed to protect voltage sensitive components that require low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, and fast response time, make these parts ideal for ESD protection on designs that utilize high−speed lines such as USB. www.onsemi.com Specification Features: • Low Capacitance 2.5 pF • Low Clamping Voltage • Small Body Outline Dimensions: • • • • • • • 0.039″ x 0.024″ (1.00 mm x 0.60 mm) Low Body Height: 0.016″ (0.4 mm) Stand−off Voltage: 5 V Low Leakage Response Time is Typically < 1.0 ns IEC61000−4−2 Level 4 ESD Protection AEC−Q101 Qualified and PPAP Capable This is a Pb−Free Device SOD−923 CASE 514AB MARKING DIAGRAM Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic 4M Epoxy Meets UL 94 V−0 LEAD FINISH: 100% Matte Sn (Tin) MOUNTING POSITION: Any 4 = Specific Device Code M = Date Code QUALIFIED MAX REFLOW TEMPERATURE: 260°C Device Meets MSL 1 Requirements MAXIMUM RATINGS ORDERING INFORMATION Rating IEC 61000−4−2 (ESD) Symbol Value Unit ±10 ±15 kV °PD° 150 mW TJ, Tstg −55 to +150 °C TL 260 °C Contact Air Total Power Dissipation on FR−5 Board (Note 1) @ TA = 25°C Junction and Storage Temperature Range Lead Solder Temperature − Maximum (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.62 in. Device Package Shipping† ESD9M5.0ST5G SOD−923 (Pb−Free) 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics tables starting on page 2 of this data sheet. See Application Note AND8308/D for further description of survivability specs. © Semiconductor Components Industries, LLC, 2013 October, 2017 − Rev. 6 1 Publication Order Number: ESD9M5.0S/D ESD9M5.0ST5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol I Parameter IF IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR Working Peak Reverse Voltage VBR Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF Ppk Peak Power Dissipation C VC VBR VRWM Maximum Reverse Leakage Current @ VRWM V IR VF IT IPP Uni−Directional Max. Capacitance @ VR = 0 and f = 1.0 MHz *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.0 V Max. @ IF = 10 mA for all types) Device ESD9M5.0ST5G C (pF) VC (V) @ IPP = 1 A (Note 4) VC mA Max Max Per IEC61000−4−2 (Note 3) 1.0 2.5 9.8 VRWM (V) IR (mA) @ VRWM VBR (V) @ IT (Note 2) IT Device Marking Max Max Min 4* 5.0 1.0 5.8 Figures1and 2 See Below * Rotated 270°. * *The “G’’ suffix indicates Pb−Free package available. ***Other voltages available upon request. 2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C. 3. For test procedure see Figures 3 and 4 and Application Note AND8307/D. 4. Surge current waveform per Figure 5. Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC61000−4−2 Figure 2. ESD Clamping Voltage Screenshot Negative 8 kV Contact per IEC61000−4−2 www.onsemi.com 2 ESD9M5.0ST5G IEC61000−4−2 Waveform IEC 61000−4−2 Spec. Ipeak Level Test Voltage (kV) First Peak Current (A) Current at 30 ns (A) Current at 60 ns (A) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 100% 90% I @ 30 ns I @ 60 ns 10% tP = 0.7 ns to 1 ns Figure 3. IEC61000−4−2 Spec Device ESD Gun Under Oscilloscope Test 50 W 50 W Cable Figure 4. Diagram of ESD Test Setup The following is taken from Application Note AND8308/D − Interpretation of Datasheet Parameters for ESD Devices. systems such as cell phones or laptop computers it is not clearly defined in the spec how to specify a clamping voltage at the device level. ON Semiconductor has developed a way to examine the entire voltage waveform across the ESD protection diode over the time domain of an ESD pulse in the form of an oscilloscope screenshot, which can be found on the datasheets for all ESD protection diodes. For more information on how ON Semiconductor creates these screenshots and how to interpret them please refer to AND8307/D. ESD Voltage Clamping For sensitive circuit elements it is important to limit the voltage that an IC will be exposed to during an ESD event to as low a voltage as possible. The ESD clamping voltage is the voltage drop across the ESD protection diode during an ESD event per the IEC61000−4−2 waveform. Since the IEC61000−4−2 was written as a pass/fail spec for larger % OF PEAK PULSE CURRENT 100 PEAK VALUE IRSM @ 8 ms tr 90 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tP 20 10 0 0 20 40 t, TIME (ms) 60 Figure 5. 8 x 20 ms Pulse Waveform www.onsemi.com 3 80 ESD9M5.0ST5G PACKAGE DIMENSIONS SOD−923 CASE 514AB ISSUE C D −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. −Y− E 1 2X b 0.08 X Y 2 TOP VIEW DIM A b c D E HE L L2 A c HE SIDE VIEW MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.15 0.20 0.25 0.07 0.12 0.17 0.75 0.80 0.85 0.55 0.60 0.65 0.95 1.00 1.05 0.19 REF 0.05 0.10 0.15 SOLDERING FOOTPRINT* 2X L 1.20 2X 2X 0.36 2X INCHES MIN NOM MAX 0.013 0.015 0.016 0.006 0.008 0.010 0.003 0.005 0.007 0.030 0.031 0.033 0.022 0.024 0.026 0.037 0.039 0.041 0.007 REF 0.002 0.004 0.006 L2 PACKAGE OUTLINE BOTTOM VIEW 0.25 DIMENSIONS: MILLIMETERS See Application Note AND8455/D for more mounting details *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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