ESD9R3.3ST5G

ESD9R3.3S, SZESD9R3.3S ESD Protection Diode Ultra−Low Capacitance The ESD9R is designed to provide ESD protection for ASSPs and ASICs used in ultra low current applications such as human body sensors. These devices have been designed for leakage under 1 nA from 0°C to 50°C when turned off. During an ESD event, these devices turn on to clamp the ESD to a safe voltage level for the IC. These devices have the added benefits of low capacitance for high speed data lines and small package size for space constrained designs. www.onsemi.com Specification Features: • • • • • • • • • • Ultra−Low Leakage < 1 nA Ultra−Low Capacitance 0.5 pF Low Clamping Voltage Small Body Outline Dimensions: 0.039″ x 0.024″ (1.00 mm x 0.60 mm) Low Body Height: 0.016″ (0.4 mm) Stand−off Voltage: 3.3 V Response Time < 1.0 ns IEC61000−4−2 Level 4 ESD Protection SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable This is a Pb−Free and Halogen−Free Device Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic Epoxy Meets UL 94 V−0 LEAD FINISH: 100% Matte Sn (Tin) MOUNTING POSITION: Any SOD−923 CASE 514AB MARKING DIAGRAM JM J = Specific Device Code M = Date Code *Date Code orientation and/or position may vary depending upon manufacturing location. ORDERING INFORMATION QUALIFIED MAX REFLOW TEMPERATURE: 260°C Package Shipping† ESD9R3.3ST5G SOD−923 (Pb−Free) 8000 / Tape & Reel SZESD9R3.3ST5G SOD−923 (Pb−Free) 8000 / Tape & Reel Device Device Meets MSL 1 Requirements MAXIMUM RATINGS Rating IEC 61000−4−2 (ESD) Symbol Contact Air HBM Value Unit ±10 ±15 ±16 kV Total Power Dissipation on FR−5 Board (Note 1) @ TA = 25°C °PD° 150 mW Storage Temperature Range Tstg −55 to +150 °C Junction Temperature Range TJ −55 to +125 °C Lead Solder Temperature − Maximum (10 Second Duration) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.62 in. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics tables starting on page 2 of this data sheet. See Application Note AND8308/D for further description of survivability specs. © Semiconductor Components Industries, LLC, 2013 October, 2017 − Rev. 2 1 Publication Order Number: ESD9R3.3S/D ESD9R3.3S, SZESD9R3.3S ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol I Parameter IF IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR Working Peak Reverse Voltage VBR Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF Ppk Peak Power Dissipation C VC VBR VRWM Maximum Reverse Leakage Current @ VRWM V IR VF IT IPP Uni−Directional Max. Capacitance @ VR = 0 and f = 1.0 MHz *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.0 V Max. @ IF = 10 mA for all types) VRWM (V) IR (nA) @ 1 V TA = 05C to 505C (Note 4) VBR (V) @ IT (Note 2) IT C (pF) VC (V) @ IPP = 1 A (Note 5) VC Per IEC61000−4−2 (Note 3) Device* Device Marking Max Max Min mA Typ Max Max ESD9R3.3ST5G J** 3.3 1.0 4.8 1.0 0.5 0.9 7.8 Figures 1 and 2 See Below *Includes SZ−prefix device where applicable. **Rotated 270°. 2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C. 3. For test procedure see Figures 3 and 4 and Application Note AND8307/D. 4. Limits over temperature are guaranteed by design, not production tested. 5. VC measured using pulse waveform in Figure 5. Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC61000−4−2 Figure 2. ESD Clamping Voltage Screenshot Negative 8 kV Contact per IEC61000−4−2 www.onsemi.com 2 ESD9R3.3S, SZESD9R3.3S IEC61000−4−2 Waveform IEC 61000−4−2 Spec. Ipeak Level Test Voltage (kV) First Peak Current (A) Current at 30 ns (A) Current at 60 ns (A) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 100% 90% I @ 30 ns I @ 60 ns 10% tP = 0.7 ns to 1 ns Figure 3. IEC61000−4−2 Spec Device ESD Gun Under Oscilloscope Test 50 W 50 W Cable Figure 4. Diagram of ESD Test Setup The following is taken from Application Note AND8308/D − Interpretation of Datasheet Parameters for ESD Devices. systems such as cell phones or laptop computers it is not clearly defined in the spec how to specify a clamping voltage at the device level. ON Semiconductor has developed a way to examine the entire voltage waveform across the ESD protection diode over the time domain of an ESD pulse in the form of an oscilloscope screenshot, which can be found on the datasheets for all ESD protection diodes. For more information on how ON Semiconductor creates these screenshots and how to interpret them please refer to AND8307/D. ESD Voltage Clamping For sensitive circuit elements it is important to limit the voltage that an IC will be exposed to during an ESD event to as low a voltage as possible. The ESD clamping voltage is the voltage drop across the ESD protection diode during an ESD event per the IEC61000−4−2 waveform. Since the IEC61000−4−2 was written as a pass/fail spec for larger % OF PEAK PULSE CURRENT 100 PEAK VALUE IRSM @ 8 ms tr 90 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tP 20 10 0 0 20 40 t, TIME (ms) 60 Figure 5. 8 x 20 ms Pulse Waveform www.onsemi.com 3 80 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOD−923 CASE 514AB ISSUE D STYLE 1 DATE 03 SEP 2020 STYLE 2 SCALE 8:1 D −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 5. DIMENSION L WILL NOT EXCEED 0.30mm. −Y− E 1 2X b 0.08 X Y 2 TOP VIEW c HE SIDE VIEW 2X 2X BOTTOM VIEW XM XM STYLE 1 STYLE 2 X M SOLDERING FOOTPRINT* = Specific Device Code = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 1.20 2X INCHES MIN NOM MAX 0.013 0.015 0.016 0.006 0.008 0.010 0.003 0.005 0.007 0.030 0.031 0.033 0.022 0.024 0.026 0.037 0.039 0.041 0.007 REF 0.002 0.004 0.006 GENERIC MARKING DIAGRAM* L L2 2X 0.36 MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.15 0.20 0.25 0.07 0.12 0.17 0.75 0.80 0.85 0.55 0.60 0.65 0.95 1.00 1.05 0.19 REF 0.05 0.10 0.15 DIM A b c D E HE L L2 A 0.25 STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE PACKAGE OUTLINE STYLE 2: NO POLARITY DIMENSIONS: MILLIMETERS See Application Note AND8455/D for more mounting details *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON23284D Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. SOD−923, 1.0X0.6X0.37, MAX HEIGHT 0.40 PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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