ESDL2011PFCT5G

ESDL2011 ESD Protection Diode Micro−Packaged Diodes for ESD Protection The ESDL2011 is designed to protect voltage sensitive components that require low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its low capacitance, the part is well suited for use in high speed data line applications. www.onsemi.com 1 Features • • • • • • • Low Capacitance 0.17 pF (Typ) Low Clamping Voltage Small Body Outline Dimensions: 0.60 mm x 0.30 mm Low Body Height: 0.2 mm Stand−off Voltage: 1.0 V IEC61000−4−2 Level 4 ESD Protection These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 2 MARKING DIAGRAM DSN2 (Side wall isolated) CASE 152AX A A = Specific Device Code Typical Applications • USB 3.x • Thunderbolt 3.0 ORDERING INFORMATION MAXIMUM RATINGS Rating IEC 61000−4−2 (ESD) Symbol Contact Air Value Unit ±15 ±15 kV Total Power Dissipation on FR−4 Board (Note 1) @ TA = 25°C Thermal Resistance, Junction−to−Ambient °PD° 313 mW RqJA 400 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C TL 260 °C Lead Solder Temperature − Maximum (10 Second Duration) Device Package Shipping† ESDL2011PFCT5G DSN2 (Pb−Free) 10000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 = 28 mm2 1 oz. Cu JEDEC JESD51−3 two layer PCB. See Application Note AND8308/D for further description of survivability specs. © Semiconductor Components Industries, LLC, 2017 May, 2019 − Rev. 2 1 Publication Order Number: ESDL2011/D ESDL2011 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) IPP I Parameter Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IT VC VBR VRWM IR IR VRWM VBR VC IT Working Peak Reverse Voltage IR V Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT IPP Test Current Bi−Directional Surge Protector *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Reverse Working Voltage Breakdown Voltage VRWM VBR Conditions Min Typ 1.4 1.65 30 I/O Pin to GND IT = 1 mA, I/O Pin to GND Max Unit 1.0 V 2.3 V 500 nA Reverse Leakage Current IR VRWM = 1.0 V Clamping Voltage (Note 2) VC IEC61000−4−2, ±8 kV Contact Clamping Voltage 200 ns TLP VC IPP = 4 A IEC61000−4−2 Level 1 Equivalent (±2 kV Contact, ±4 kV Air) 3.5 4.0 IPP = 8 A IEC61000−4−2 Level 2 Equivalent (±4 kV Contact, ±8 kV Air) 4.8 6.0 Figures 1 and 2 3.5 V V Reverse Peak Pulse Current per Figure 12 IPP per IEC61000−4−5 (1.2/50 ms), Req = 12 W 4.5 A Clamping Voltage 1.2/50 ms Waveform per Figure 12 VC IPP = 2.1 A, IEC61000−4−5 (1.2/50 ms), Req = 12 W 2.9 3.5 V Clamping Voltage 1.2/50 ms Waveform per Figure 12 VC IPP = 3.5 A, IEC61000−4−5 (1.2/50 ms), Req = 12 W 3.6 4.0 V Dynamic Resistance (TLP) RDYN I/O Pin to GND (4 A to 8 A, 200 ns TLP) 0.34 0.5 W Junction Capacitance CJ VR = 0 V, f = 1 MHz 0.17 0.20 pF Insertion Loss IL f = 5 GHz f = 10 GHz 0.165 0.34 0.20 0.40 dB 100 10 90 0 80 −10 70 −20 60 −30 VOLTAGE (V) VOLTAGE (V) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. For test procedure see application note AND8307/D. 3. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z0 = 50 W, tp = 200 ns, tr = 4 ns, averaging window; t1 = 170 ns to t2 = 190 ns. 50 40 30 −40 −50 −60 20 −70 10 −80 −90 0 −10 −25 0 25 50 75 TIME (ns) 100 125 −100 −25 150 Figure 1. IEC61000−4−2 + 8 kV Contact ESD Clamping Voltage 0 25 50 75 TIME (ns) 100 125 Figure 2. IEC61000−4−2 − 8 kV Contact ESD Clamping Voltage www.onsemi.com 2 150 ESDL2011 TYPICAL CHARACTERISTICS 1.E−02 1.E−03 1.E−04 IR (A) 1.E−05 1.E−06 1.E−07 1.E−08 1.E−09 1.E−10 1.E−11 1.E−12 1.E−13 1.E−14 −1.5 −1 −0.5 0 0.5 1 1.5 VR (V) Figure 3. IV Characteristics 1.0 −0.1 0.9 −0.2 0.8 CAPACITANCE (pF) 0 S21 (dB) −0.3 −0.4 −0.5 −0.6 −0.7 0.7 0.6 0.5 0.4 0.3 −0.8 0.2 −0.9 0.1 −1.0 1.E+07 1.E+08 1.E+09 0 0.E+00 1.E+10 0 1 2 3 4 5 6 7 8 1.E+10 2.E+10 3.E+10 Figure 5. Typical Capacitance over Frequency ITLP (A) ITLP (A) Figure 4. Insertion Loss 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 5.E+09 FREQUENCY (Hz) FREQUENCY (Hz) 9 10 11 12 13 14 15 16 −16 −15 −14 −13 −12 −11 −10 −9 −8 −7 −6 −5 −4 −3 −2 −1 0 0 −1 −2 −3 −4 −5 −6 −7 −8 −9 −10−11−12−13−14−15−16 VOLTAGE (V) VOLTAGE (V) Figure 6. Positive 200 ns TLP IV Curve Figure 7. Negative 200 ns TLP IV Curve www.onsemi.com 3 ESDL2011 5.0 5.0 4.5 4.5 4.0 4.0 3.5 3.5 VC @ IPK (V) VC @ IPK (V) TYPICAL CHARACTERISTICS 3.0 2.5 2.0 1.5 3.0 2.5 2.0 1.5 1.0 1.0 0.5 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 IPK (A) 3.5 4.0 4.5 0.0 0.0 5.0 Figure 8. Positive Clamping Voltage vs. Peak Pulse Current (per IEC61000−4−5 (tp = 1.2/50 ms, Req = 12 W)) 0.5 1.0 1.5 2.0 2.5 3.0 IPK (A) 3.5 4.0 4.5 5.0 Figure 9. Negative Clamping Voltage vs. Peak Pulse Current (per IEC61000−4−5 (tp = 1.2/50 ms, Req = 12 W)) www.onsemi.com 4 ESDL2011 IEC61000−4−2 Waveform IEC 61000−4−2 Spec. Ipeak Level Test Voltage (kV) First Peak Current (A) Current at 30 ns (A) Current at 60 ns (A) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 100% 90% I @ 30 ns I @ 60 ns 10% tP = 0.7 ns to 1 ns Figure 10. IEC61000−4−2 Spec ESD Gun Oscilloscope TVS 50 W Cable 50 W Figure 11. Diagram of ESD Test Setup ESD Voltage Clamping at the device level. ON Semiconductor has developed a way to examine the entire voltage waveform across the ESD protection diode over the time domain of an ESD pulse in the form of an oscilloscope screenshot, which can be found on the datasheets for all ESD protection diodes. For more information on how ON Semiconductor creates these screenshots and how to interpret them please refer to AND8307/D. Vp, PEAK VOLTAGE (%Vp) For sensitive circuit elements it is important to limit the voltage that an IC will be exposed to during an ESD event to as low a voltage as possible. The ESD clamping voltage is the voltage drop across the ESD protection diode during an ESD event per the IEC61000−4−2 waveform. Since the IEC61000−4−2 was written as a pass/fail spec for larger systems such as cell phones or laptop computers it is not clearly defined in the spec how to specify a clamping voltage tr = rise time to peak value [1.2 ms] tf = decay time to half value [50 ms] Peak Value 100 Half Value 50 0 0 tr tf t, TIME (ms) Figure 12. IEC61000−4−5 1.2/50 ms Pulse Waveform www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS X4DFN2, 0.60x0.30, 0.36P CASE 152AX ISSUE G SCALE 8:1 D PIN 1 INDICATOR ÈÈ DATE 12 APR 2019 A B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. E DIM A A1 b D E e L TOP VIEW A 0.02 C A1 GENERIC MARKING DIAGRAM* 0.01 C C SIDE VIEW MILLIMETERS MIN NOM MAX 0.175 0.200 0.225 0.018 REF 0.205 0.215 0.225 0.575 0.600 0.625 0.275 0.300 0.325 0.36 BSC 0.145 0.155 0.165 SEATING PLANE X e X b X = Specific Device Code 1 0.05 M 2X L C A B 0.05 M C A B BOTTOM VIEW *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. Some products may not follow the Generic Marking. RECOMMENDED SOLDER FOOTPRINT* 0.65 2X 1 2X 0.27 0.26 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON06808G X4DFN2, 0.60x0.30, 0.36P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative