ESDM1131MX4T5G

ESDM1131 3.3 V ESD Protection Diodes Micro−packaged Diodes for ESD Protection www.onsemi.com The ESD1131 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in smartphone, smart-watch, or many other portable / wearable applications where board space comes at a premium. MARKING DIAGRAM X4DFN2 CASE 718AA Features A = Specific Device Code • Low Capacitance (4 pF, I/O to GND) • Small Body Outline Dimensions • • • 01005 Size: 0.445 x 0.240 mm Protection for the Following IEC Standards: IEC 61000−4−2 (Level 4) Low ESD Clamping Voltage These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ♦ MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Value Unit Operating Junction Temperature Range TJ −55 to +125 °C Storage Temperature Range Tstg −55 to +150 °C Lead Solder Temperature − Maximum (10 Seconds) TL 260 °C ESD ESD PIN CONFIGURATION AND SCHEMATIC 1 2 = Symbol IEC 61000−4−2 Contact (ESD) IEC 61000−4−2 Air (ESD) A kV kV ±16 ±16 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. See Application Note AND8308/D for further description of survivability specs. © Semiconductor Components Industries, LLC, 2017 March, 2018 − Rev. 1 1 Publication Order Number: ESDM1131/D ESDM1131 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Reverse Working Voltage Symbol VRWM Breakdown Voltage VBR Conditions Min Typ I/O Pin to GND IT = 1 mA, I/O Pin to GND 4.0 5.0 Max Unit 3.3 V 6.0 V 0.1 mA Reverse Leakage Current IR VRWM = 3.3 V, I/O Pin to GND Clamping Voltage VC IPP = 4 A, (8x20 ms pulse) 5.6 V Clamping Voltage TLP (Note 1) VC IPP = 8 A IEC 61000−4−2 Level 2 equivalent (±4 kV Contact, ±4 kV Air) 5.5 V IPP = 16 A IEC 61000−4−2 Level 2 equivalent (±8 kV Contact, ±15 kV Air) 7.0 Junction Capacitance CJ VR = 0 V, f = 1 MHz 4.0 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z0 = 50 W, tp = 100 ns, tr = 4 ns, averaging window; t1 = 30 ns to t2 = 60 ns. ORDERING INFORMATION Device ESDM1131MX4T5G Package Shipping† X4DFN2 (Pb−Free) 10,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 ESDM1131 10 1E−03 9 1E−04 8 1E−05 7 1E−06 6 1E−07 IR (A) C (pF) TYPICAL CHARACTERISTICS 1E−08 5 4 1E−09 3 1E−10 2 1E−11 1 0 −3.5 1E−12 1E−13 −6 −5 −2.5 −1.5 −0.5 0.5 1.5 2.5 3.5 0 1 2 3 4 VR (V) Figure 1. CV Characteristics Figure 2. Reverse Leakage Current 5 6 10 9 0 CAPACITANCE (pF) 8 −2 (dB) −2 −1 VBIAS (V) 2 −4 −6 7 6 5 4 3 2 −8 −10 −4 −3 1.E+07 1.E+08 1 0 1.E+09 0.5 1.0 1.5 2.0 2.5 FREQUENCY (Hz) FREQUENCY (GHz) Figure 3. S21 Insertion Loss Figure 4. Capacitance over Frequency www.onsemi.com 3 3.0 ESDM1131 20 −20 18 −18 16 −16 TLP CURRENT (A) TLP CURRENT (A) TYPICAL CHARACTERISTICS 14 12 10 8 6 −14 −12 −10 −8 −6 4 −4 2 0 −2 0 0 2 4 6 8 10 12 14 18 16 20 0 2 4 6 VC, VOLTAGE (V) 10 12 14 18 16 20 VC, VOLTAGE (V) Figure 5. Positive TLP I−V Curve Figure 6. Negative TLP I−V Curve 30 −30 25 −25 20 −20 VOLTAGE (V) VOLTAGE (V) 8 15 10 5 −15 −10 −5 0 −10 10 30 50 70 90 110 130 0 −10 150 TIME (ns) 10 30 50 70 90 110 130 150 TIME (ns) Figure 7. Positive 8 kV ESD Contact Discharge Figure 8. Negative 8 kV ESD Contact Discharge www.onsemi.com 4 ESDM1131 IEC61000−4−2 Waveform IEC 61000−4−2 Spec. Ipeak Level Test Voltage (kV) First Peak Current (A) Current at 30 ns (A) Current at 60 ns (A) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 100% 90% I @ 30 ns I @ 60 ns 10% tP = 0.7 ns to 1 ns Figure 9. IEC61000−4−2 Spec Transmission Line Pulse (TLP) Measurement L Transmission Line Pulse (TLP) provides current versus voltage (I−V) curves in which each data point is obtained from a 100 ns long rectangular pulse from a charged transmission line. A simplified schematic of a typical TLP system is shown in Figure 10. TLP I−V curves of ESD protection devices accurately demonstrate the product’s ESD capability because the 10s of amps current levels and under 100 ns time scale match those of an ESD event. This is illustrated in Figure 11 where an 8 kV IEC 61000−4−2 current waveform is compared with TLP current pulses at 8 A and 16 A. A TLP I−V curve shows the voltage at which the device turns on as well as how well the device clamps voltage over a range of current levels. 50 W Coax Cable S Attenuator ÷ 50 W Coax Cable 10 MW IM VM DUT VC Oscilloscope Figure 10. Simplified Schematic of a Typical TLP System Figure 11. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS X4DFN2, 0.445x0.24, 0.27P CASE 718AA ISSUE A DATE 21 MAR 2017 SCALE 10:1 A B D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. EXPOSED COPPER ALLOWED AS SHOWN. Ç PIN 1 REFERENCE DIM A A1 b D E e L E TOP VIEW A 0.03 C 0.03 C A1 SIDE VIEW C GENERIC MARKING DIAGRAMS* SEATING PLANE X e e/2 2 2X 0.10 C A B L X b PIN 1 2X MILLIMETERS MIN NOM MAX 0.15 0.18 0.21 −−− −−− 0.03 0.170 0.185 0.200 0.415 0.445 0.475 0.210 0.240 0.270 0.270 BSC 0.105 0.120 0.135 0.05 C NOTE 3 BOTTOM VIEW X = Specific Device Code *This information is generic. Please refer to device data sheet for actual part marking. Some products may not follow the Generic Marking. RECOMMENDED MOUNTING FOOTPRINT* 0.27 PITCH 2X 0.21 1 2X 0.13 DIMENSIONS: MILLIMETERS See Application Note AND8398/D for more mounting details *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON29067G X4DFN2, 0.445X0.24, 0.27P Electronic versions are uncontrolled except when accessed directly from the Document Repository. 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