FAB2210UCX

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FAB2210 — Audio Subsystem with Class-G Headphone and 3.3 W Mono Class-D Speaker with Dynamic Range Compression Features Description  High-Efficiency Stereo Class-G Headphone - 100 dB SNR Headphone Amplifier - Capacitor-Free Outputs for High-Frequency Response The FAB2210 combines a Class-G stereo capacitorfree headphone amplifier with a mono Class-D speaker amplifier into one IC package.  Mono Filterless Class-D Speaker Amplifier - 91% Efficiency for Extended Battery Runtime - DRC for Louder SPL and Speaker Protection - 3.3 W into 4 Ω at 5.0 V, THD+N < 10% - 1.27 W into 8 Ω at 4.2 V, THD+N < 10% - Low EMI Edge-Rate Controlled output - 97 dB Signal-to-Noise Ratio (SNR)   Click and Pop Suppression  High Power Supply Rejection Ration (PSRR) Rejects 217 Hz GSM Noise   Highly Configurable using I2C Control The headphone and speaker amplifiers incorporate Class-G and Class-D topologies, respectively, for low power dissipation, which extends battery runtime. The Class-G headphone amplifier incorporates an integrated charge pump that generates a negative supply rail for ground-centered headphone outputs. The Class-D amplifier includes programmable Dynamic Range Compression (DRC) that maximizes Sound Pressure Level (SPL) for maximum loudness, while protecting the speaker from damage. Selectable Single-Ended or Differential Audio Inputs for High Common-Mode Rejection The noise gate can automatically mute the speaker or headphone amplifiers to reduce noise when input signals are LOW. Low-Power, Software Standby Mode Ordering Information Part Number Operating Temperature Range Package Packing Method FAB2210UCX -40°C to +85°C 20-Bump, Wafer-Level Chip-Scale Package (WLCSP), 0.4 mm Pitch 3000 Units on Tape & Reel Typical Application Circuit SCL SDA Headphone Volume HVSS 0dB / 1.5dB / 3dB / 6dB Noise Gate HOUTR Mixer/ MUX Speaker Volume Class-D Speaker Amp Preamp B -3dB to 18dB Noise Gate / DRC SOUT+ SOUT- 16dB/20dB/24dB DGND SGND Figure 1. HSENSE -64dB to 0dB -64dB to 0dB © 2011 Fairchild Semiconductor Corporation FAB2210 • Rev. 1.1.2 CP- Class-G Cap-Free Headphone Amps HOUTL Preamp A -3dB to 18dB 0.1µF INB1 0.1µF INB2 2.2µF Charge Pump I2C 0.1µF INA1 0.1µF INA2 2.2µF CP+ SVDD 2.2µF HVDD 1.6V – 2.8V 2.2µF DVDD 2.8V – 5.25V 10µF 2.2µF Typical Application Circuit www.fairchildsemi.com FAB2210 — Audio Subsystem with Class-G Headphone and 3.3W Mono Class-D Speaker with Dynamic Range Compression November 2012 Figure 2. Pin Assignments, Top View (Bump Side Down) Pin Definitions Pin # Name Type Description A2 SVDD Power Input Power supply for Class-D amplifier C1 SGND Power Input Class-D amplifier ground C2 DVDD Power Input Power supply for charge pump A3 DGND Power Input Headphone amplifier ground C3 HVDD Power Output C4 HVSS Power Output Charge pump output; negative mirror of HVDD B4 CP+ Power Charge pump flying capacitor positive terminal A4 CP- Power Charge pump flying capacitor negative terminal Charge pump output; positive power supply for headphone amplifier, input preamplifiers, and mixers E3 NC No Connect D1 INA1 Input Single-ended line level audio input A1 (or non-inverting differential input INA+) No connect can be tied to SGND for additional thermal dissipation E1 INA2 Input Single-ended line level audio input A2 (or inverting differential input INA-) D2 INB1 Input Single-ended line level audio input B1 (or non-inverting differential input INB+) E2 INB2 Input Single-ended line level audio input B2 (or inverting differential input INB-) E4 HOUTL Output Left headphone amplifier output D4 HOUTR Output Right headphone amplifier output D3 HSENSE Input A1 SOUT+ Output Positive Class-D amplifier output B1 SOUT- Output Negative Class-D amplifier output B3 SCL Input B2 SDA Bidirectional © 2011 Fairchild Semiconductor Corporation FAB2210 • Rev. 1.1.2 Sense ground; connect to DGND close to shield terminal of headphone jack I2C clock input I2C data I/O www.fairchildsemi.com 2 FAB2210 — Audio Subsystem with Class-G Headphone and 3.3W Mono Class-D Speaker with Dynamic Range Compression Pin Configuration Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. All voltages are referenced to GND. Symbol Parameter Min. Max. Unit VDD Voltage on SVDD Pin -0.3 6.0 V VDVDD Voltage on DVDD Pin -0.3 3.2 V VSVDD Voltage on SVDD + DVDD Pins VIN 8 V (1) Voltage on INA1, INA2, INB1, INB2 Pins VHVSS-0.3 VHOUT Voltage on HOUTL, HOUTR Pins VHVSS-0.3 VDVDD+0.3 V VSENSE Voltage on HSENSE Pin -0.3 0.3 V Voltage on SDA, SCL Pins -0.3 VSVDD V Voltage on SOUT+, SOUT- Pins -0.3 VSVDD+0.3 Headphone Impedance 12.8 VD VSOUT RHP VDVDD+0.3 or 2.1 V V Ω Note: 1. Whichever is less. Reliability Information Symbol TJ TSTG Parameter Min. Typ. Junction Temperature Storage Temperature Range -65 Max. Unit 150 °C 150 °C 300 °C TL Lead Temperature (Soldering, 10 Seconds) θJA Thermal Resistance, JEDEC Standard, Multilayer Test Boards, Still Air 66 TSD Thermal Shutdown Threshold 150 °C THYS Thermal Shutdown Hysteresis 15 °C °C/W Electrostatic Discharge Protection Symbol ESD Parameter Min. Unit Human Body Model; JESD22-A114 Level 2; Compatible with IEC61340-3-1: 2002 Level 2 or ESD-STM5.1-2001 Level 2 or MIL-STD-883E 3015.7 Level 2 ±2.00 kV Charged Device Model; JESD22-C101 Level III Compatible with IEC61340-3-3 level C4 or ESD-STM5.3.1-1999 Level C4 ±1.25 kV Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to Absolute Maximum Ratings. Symbol TA VSVDD VDVDD Parameter Min. Typ. Max. Unit Operating Temperature Range -40 85 °C Speaker Supply Voltage Range(2,3) 2.80 3.60 5.25 V 1.6 1.8 2.8 V Headphone Supply Voltage Range (2,3) Notes: 2. VSVDD must be greater than or equal to VDVDD at all times. 3. VSVDD and VDVDD slew rates must be less than 1 V / µs. © 2011 Fairchild Semiconductor Corporation FAB2210 • Rev. 1.1.2 www.fairchildsemi.com 3 FAB2210 — Audio Subsystem with Class-G Headphone and 3.3W Mono Class-D Speaker with Dynamic Range Compression Absolute Maximum Ratings Unless otherwise noted: audio BW=22 Hz to 20 kHz, fIN=1 kHz, DIFA=1, DIFB=0, HP_AMIX=0, HP_BMIX=1, SP_AMIX=1, SP_BMIX=0, unused inputs are AC grounded, DRC is off, preamplifier gains=0 dB, headphone volume=0 dB, headphone amplifier gain=0 dB, speaker volume=0 dB, SP_GAIN=00, edge-rate control is on, spread spectrum is on, HP_NG_RAT=100, SP_NG_RAT=001, SRST=0, SDA and SCL pull-up voltage=DVDD, ZSPK = 8 Ω + 33 µH, RHP = 32 Ω, HP_HIZ=0, SVDD = 3.6 V, DVDD = 1.8 V, and TA=25°C. Symbol ISTBY tON RIN Parameter Condition Min. Typ. Max. Unit Standby Current (SRST=1) SVDD + DVDD 2 µA Turn-On Time Time from Standby to Full Speaker and Headphone Operation, ZCD and Ramps Disabled 1.6 ms Preamplifier Gain=12.0 dB 7.7 Preamplifier Gain=6.0 dB 12.8 Preamplifier Gain=4.5 dB 14.3 Preamplifier Gain=3.0 dB 15.9 Preamplifier Gain=1.5 dB 17.5 Preamplifier Gain=0.0 dB 19.2 Preamplifier Gain=-1.5 dB 20.8 Preamplifier Gain=-3.0 dB 22.4 Input Resistance Maximum Input Signal Swing Preamplifier Gain=0 dB (SVDD=2.8 V to 5.25 V, Preamplifier Gain=12 dB Single-Ended Input) © 2011 Fairchild Semiconductor Corporation FAB2210 • Rev. 1.1.2 kΩ VDVDD Vpk-pk VDVDD ÷ 4 Vpk-pk www.fairchildsemi.com 4 FAB2210 — Audio Subsystem with Class-G Headphone and 3.3W Mono Class-D Speaker with Dynamic Range Compression Electrical Characteristics Unless otherwise noted: audio BW=22 Hz to 20 kHz, fIN=1 kHz, DIFA=1, DIFB=0, HP_AMIX=0, HP_BMIX=0, SP_AMIX=1, SP_BMIX=0, unused inputs are AC grounded, DRC is off, preamplifier gains=0 dB, headphone volume=0 dB, headphone amplifier gain=0 dB, speaker volume=0 dB, SP_GAIN=00, edge-rate control is on, spread spectrum is on, HP_NG_RAT=000, SP_NG_RAT=000, SRST=0, SDA and SCL pull-up voltage=DVDD, ZSPK = 8 Ω + 33 µH, RHP=32 Ω, HP_HIZ=0, SVDD=3.6 V, DVDD=1.8 V, and TA=25°C. Symbol Parameter Condition ICC Current Consumption SP_NG_RAT=001 VOS Output Offset Voltage Volume=0dB PSRR Power-Supply Rejection Ratio THD+N SNR Output Power Total Harmonic Distortion Plus Noise SVDD 2.7 DVDD 1.6 200 mVpk-pk Ripple on SVDD, SP_NG_RAT=001 f=217 Hz 70 f=1 kHz 70 f=20 kHz 63 f=217 Hz 74 f=1 kHz 70 f=20 kHz 44 THD+N < 10%, SVDD=5.0 V, ZSPK=4 Ω + 33 µH 3.3 THD+N < 1%, SVDD=5.0 V, ZSPK=4 Ω + 33 µH 2.6 THD+N < 10%, SVDD=4.2 V 1.27 THD+N < 1%, SVDD=4.2 V 1.00 THD+N < 10%, SVDD=3.6 V 0.92 THD+N < 1%, SVDD=3.6 V 0.73 POUT=0.7 W, SVDD=4.2 V 0.04 POUT=0.7 W, SVDD=3.6 V 0.17 Max. Unit mA mV dB W % A-wt, POUT=700 mW 97 A-wt, POUT=700 mW, SVDD=4.2 V 97 Spread Spectrum 300 Fixed Frequency 300 Efficiency POUT=720 mW 91 % DC Detect Voltage Absolute Value, Measured Differentially Across SOUT+ and SOUT- 1.5 Vpk DCERR_TIME=10 15 DCERR_TIME=01 5 DCERR_TIME=00 2 Amp. Off, SP_HIZ=0, f < 40 kHz 2 OTP_ERR=1, f < 40 kHz 2 DC_ERR=1, f < 40 kHz 2 Amp. Off, SP_HIZ=1, f < 40 kHz 35 OCP_ERR=1, f < 40 kHz 2 Signal-to-Noise Ratio Class-D Frequency tDCERR Typ. ±0.4 200 mVpk-pk Ripple on SVDD POUT Min. DC Detect Time Single-Ended Output Impedance © 2011 Fairchild Semiconductor Corporation FAB2210 • Rev. 1.1.2 dB kHz ms kΩ www.fairchildsemi.com 5 FAB2210 — Audio Subsystem with Class-G Headphone and 3.3W Mono Class-D Speaker with Dynamic Range Compression Electrical Characteristics (Speaker Amplifier) Unless otherwise noted: audio BW=22 Hz to 20 kHz, fIN=1 kHz, DIFA=1, DIFB=0, HP_AMIX=0, HP_BMIX=1, SP_AMIX=0, SP_BMIX=0, unused inputs are AC grounded, DRC is off, preamplifier gains=0 dB, headphone volume=0 dB, headphone amplifier gain=0 dB, speaker volume=0 dB, SP_GAIN=00, edge-rate control is on, spread spectrum is on, HP_NG_RAT=000, SP_NG_RAT=000, SRST=0, SDA and SCL pull-up voltage=DVDD, ZSPK = 8 Ω + 33 µH, RHP=32 Ω, HP_HIZ=0, SVDD=3.6 V, DVDD=1.8 V, and TA=25°C. Symbol Parameter Condition ICC Current Consumption HP_NG_RAT=100 VOS Output Offset Voltage Volume=Mute PSRR Power-Supply Rejection Ratio THD+N Output Power Total Harmonic Distortion Plus Noise SVDD 0.8 DVDD 1.9 200 mVpk-pk Ripple on SVDD, HP_NG_RAT=100 f=217 Hz 93 f=1 kHz 94 f=20 kHz 97 f=217 Hz 93 f=1 kHz 93 f=20 kHz 97 THD+N < 0.1% 27 THD+N < 1%, Headphone Amplifier Gain=6dB 29 THD+N < 1%, Headphone Amplifier Gain=6 dB, SVDD=4.2 V 29 POUT=10 mW 0.01 POUT=10 mW, SVDD=4.2 V 0.01 POUT=20 mW CL Xtak Signal-to-Noise Ratio A-wt, HP_NG_RAT POUT=10 mW, SVDD=4.2 V =100 POUT=20 mW 102.5 POUT=10 mW, SVDD=3.6 V A-wt, HP_NG_RAT POUT=10 mW, SVDD=4.2 V =000 POUT=20 mW 97.0 Capacitive Drive Crosstalk Output Impedance © 2011 Fairchild Semiconductor Corporation FAB2210 • Rev. 1.1.2 Max. Unit mA mV dB dB mW % 0.01 POUT=10 mW, SVDD=3.6 V SNR Typ. ±0.1 200 mVpk-pk Ripple on SVDD POUT Min. 102.5 105.5 dB 97.0 100.0 100 POUT=10 mW, f=100 Hz -96 POUT=20 mW, f=100 Hz -95 POUT=10 mW, f=1 kHz -93 POUT=20 mW, f=1 kHz -92 POUT=10 mW, f=10 kHz -79 POUT=20 mW, f=10 kHz -79 pF dB Headphone to Speaker, POUT=10 mWx2 -91 Speaker to Headphone, POUT=700 mW -106 Amp. Off, HP_HIZ=0 130 Ω OTP_ERR=1 170 Ω Amplifier Off, HP_HIZ=1 15 kΩ www.fairchildsemi.com 6 FAB2210 — Audio Subsystem with Class-G Headphone and 3.3W Mono Class-D Speaker with Dynamic Range Compression Electrical Characteristics (Headphone Amplifiers) Unless otherwise noted, SVDD=2.8 V to 5.25 V, DVDD=1.6 V to 2.8 V, TA=-40°C to 85°C. Symbol Fast Mode (400 kHz) Parameter Min. Max. 0.6 Unit VIL Low-Level Input Voltage -0.3 VIH High-Level Input Voltage 1.3 V VOL Low-Level Output Voltage at 3 mA Sink Current (Open-Drain or Open-Collector) 0 0.4 V IIH High-Level Input Current of Each I/O Pin, Input Voltage=VSVDD -1 1 µA IIL Low-Level Input Current of Each I/O Pin, Input Voltage=0V -1 1 µA V I2C AC Electrical Characteristics Unless otherwise noted, SVDD=2.8 V to 5.25 V, DVDD=1.6 V to 2.8 V, TA=-40°C to 85°C. Symbol fSCL tHD;STA Fast Mode (400 kHz) Parameter SCL Clock Frequency Min. Max. Unit 0 400 kHz Hold Time (Repeated) START Condition 0.6 µs tLOW Low Period of SCL Clock 1.3 µs tHIGH High Period of SCL Clock 0.6 µs tSU;STA Set-up Time for Repeated START Condition 0.6 µs tHD;DAT Data Hold Time tSU;DAT tr tf tSU;STO tBUF 0 0.9 µs (4) 100 Rise Time of SDA and SCL Signals(5) 20+0.1Cb 300 ns 20+0.1Cb 300 ns Data Set-up Time (5) Fall Time of SDA and SCL Signals ns Set-up Time for STOP Condition 0.6 µs Bus-Free Time between STOP and START Conditions 1.3 µs tSP Pulse Width of Spikes that Must Be Suppressed by the Input Filter 0 50 ns Notes: 4. A Fast-Mode I2C Bus® device can be used in a Standard-Mode I2C Bus system, but the requirement tSU;DAT ≥250 ns must then be met. This is automatically the case if the device does not stretch the LOW period of the SCL signal. If such a device does stretch the LOW period of the SCL signal, it must output the next data bit to the 2 Serial Data (SDA) line tr_max + tSU;DAT=1000 + 250=1250 ns (according to the Standard-Mode I C Bus specification) before the SCL line is released. 5. Cb equals the total capacitance of one bus line in pf. If mixed with High-Speed Mode devices, faster fall times are allowed according to the I2C specification. Figure 3. Definition of Timing for Full-Speed Mode Devices on the I2C Bus © 2011 Fairchild Semiconductor Corporation FAB2210 • Rev. 1.1.2 www.fairchildsemi.com 7 FAB2210 — Audio Subsystem with Class-G Headphone and 3.3W Mono Class-D Speaker with Dynamic Range Compression I2C DC Electrical Characteristics System Unless otherwise noted: audio BW=22 Hz to 20 kHz, fIN=1 kHz, DIFA=1, DIFB=0, HP_AMIX=0, HP_BMIX=1, SP_AMIX=1, SP_BMIX=0, unused inputs are AC grounded, DRC is off, preamplifier gains=0 dB, headphone volume=0 dB, headphone amplifier gain=0 dB, speaker volume=0 dB, SP_GAIN=00, edge-rate control is on, spread spectrum is on, HP_NG_RAT=100, SP_NG_RAT=001, SRST=0, SDA and SCL pull-up voltage=DVDD, ZSPK = 8 Ω + 33 µH, RHP=32 Ω, HP_HIZ=0, SVDD=3.6 V, DVDD=1.8 V, and TA=25°C. 4 2.5 Speaker Amplifier Mode Inputs AC grounded HP_BMIX = 0 HP_NG_RAT[2:0] = 000 SP_NG_RAT[2:0] = 001 2 DVDD Current (mA) SVDD Current (mA) 3.5 3 2.5 1 Speaker Amplifier Mode Inputs AC grounded HP_BMIX = 0 HP_NG_RAT[2:0] = 000 SP_NG_RAT[2:0] = 001 0.5 2 0 2.5 3 3.5 4 SVDD Voltage (V) 4.5 5 5.5 1.6 Figure 4. Quiescent Current vs. Supply Voltage 1.8 2 2.2 2.4 DVDD Voltage (V) 2.6 2.8 Figure 5. Quiescent Current vs. Supply Voltage 2 3.5 Headphone Amplifier Mode Inputs AC grounded SP_AMIX = 0 HP_NG_RAT[2:0] = 100 SP_NG_RAT[2:0] = 000 3 2.5 DVDD Current (mA) 1.5 SVDD Current (mA) 1.5 1 0.5 2 1.5 1 Headphone Amplifier Mode Inputs AC grounded SP_AMIX = 0 HP_NG_RAT[2:0] = 100 SP_NG_RAT[2:0] = 000 0.5 0 0 2.5 3 3.5 4 SVDD Voltage (V) 4.5 5 5.5 1.6 Figure 6. Quiescent Current vs. Supply Voltage 1.8 2 2.2 2.4 DVDD Voltage (V) 2.6 2.8 Figure 7. Quiescent Current vs. Supply Voltage 10 20 SRST = 1 9 18 16 14 Preamplifier Gain (dB) SVDD Current (µA) 8 7 6 5 4 3 12 10 8 6 4 2 0 2 -2 -4 1 2.5 3 3.5 4 SVDD Voltage (V) 4.5 5 5.5 5 10 15 20 Input Resistance (Kohm) 25 30 Figure 9. Input Resistance vs. Preamplifier Gain Figure 8. Standby Current vs. Supply Voltage © 2011 Fairchild Semiconductor Corporation FAB2210 • Rev. 1.1.2 0 www.fairchildsemi.com 8 FAB2210 — Audio Subsystem with Class-G Headphone and 3.3W Mono Class-D Speaker with Dynamic Range Compression Typical Performance Characteristics Speaker Amplifier Unless otherwise noted: audio BW=22 Hz to 20 kHz, fIN=1 kHz, DIFA=1, DIFB=0, HP_AMIX=0, HP_BMIX=0, SP_AMIX=1, SP_BMIX=0, unused inputs are AC grounded, DRC is off, preamplifier gains=0 dB, headphone volume=0 dB, headphone amplifier gain=0 dB, speaker volume=0 dB, SP_GAIN=00, edge-rate control is on, spread spectrum is on, HP_NG_RAT=000, SP_NG_RAT=000, SRST=0, SDA and SCL pull-up voltage=DVDD, ZSPK =8 Ω + 33 µH, RHP=32 Ω, HP_HIZ=0, SVDD=3.6 V, DVDD=1.8 V, and TA=25°C. 10 10 f = 1KHz ZSPK = 8ohm+33uH SVDD=2.8V SVDD=3.6V SVDD=4.2V SVDD=5.0V 1 THD+N (%) THD+N (%) 1 POUT = 500mW ZSPK = 8ohm+33uH 0.1 0.1 0.01 0.01 0.001 0.01 0.1 Output Power (W) 1 10 0.01 Figure 10. THD+N vs. Output Power THD+N = 10% 1.6 THD+N = 1% 80 70 1.4 Efficiency (%) Output Power (W) 100 90 1.8 1.2 1 0.8 60 50 40 30 0.6 0.4 20 0.2 10 0 0 2.5 3 3.5 4 SVDD Voltage (V) 4.5 5 f = 1KHz ZSPK = 8ohm+33uH SVDD = 3.6V SVDD = 4.2V 0 5.5 Figure 12. Output Power vs. Supply Voltage 0.2 0.4 0.6 0.8 Output Power (W) 1 1.2 1.4 Figure 13. Efficiency vs. Output Power 100 10 Inputs AC Grounded VRIPPLE = 200mVPP SP_NG_RAT = 000 5 BW =