FAN2001MPX

DATA SHEET www.onsemi.com High-Efficiency Step-Down DC-DC Converter 1A WDFN6 CASE 511CP FAN2001/FAN2002 MARKING DIAGRAM Description Designed for use in battery−powered applications, the FAN2001/ FAN2002 is a high−efficiency, low−noise synchronous PWM current mode and Pulse Skip (Power Save) mode dc−dc converter. It can provide up to 1 A of output current over a wide input range from 2.5 V to 5.5 V. The output voltage can be externally adjusted over a wide range of 0.8 V to 5.5 V by means of an external voltage divider. At moderate and light loads, pulse skipping modulation is used. Dynamic voltage positioning is applied, and the output voltage is shifted 0.8% above nominal value for increased headroom during load transients. At higher loads the system automatically switches over to current mode PWM control, operating at 1.3 MHz. A current mode control loop with fast transient response ensures excellent line and load regulation. To achieve high efficiency and ensure long battery life, the quiescent current is reduced to 25 mA in Power Save mode, and the supply current drops below 1 mA in shut−down mode. The FAN2001/FAN2002 is available in a 3x3 mm 6−lead MLP package. FAN2001MPX Features FAN2002MPX • • • • • • • • • • • • • 96% Efficiency, Synchronous Operation Adjustable Output Voltage Options from 0.8 V to VIN 2.5 V to 5.5 V Input Voltage Range Up to 1 A Output Current Fixed Frequency 1.3 MHz PWM Operation High Efficiency Power Save Mode 100% Duty Cycle Low Dropout Operation Soft Start Output Over−Voltage Protection Dynamic Output Voltage Positioning 25 mA Quiescent Current Thermal Shutdown and Short Circuit Protection Pb−Free and Halide Free $Y&Z&2&K 200x C $Y &Z &2 &K 200xC = onsemi Logo = Assembly Plant Code = 2−Digit Data Code = Lot Run Traceability Code = Specific Device Code x = 1 or 2 ORDERING INFORMATION Device Package Shipping† WDFN6 (Pb−Free, Halide Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Applications • • • • • • • • • Pocket PCs, PDAs Cell Phones Battery−Powered Portable Devices Digital Cameras Hard Disk Drives Set−Top−Boxes Point−of−Load Power Notebook Computers Communications Equipment © Semiconductor Components Industries, LLC, 2005 November, 2021 − Rev. 2 1 Publication Order Number: FAN2002/D FAN2001/FAN2002 TYPICAL APPLICATION VIN CIN 10 mF PGND EN 3.3 mH 1 2 6 P1 (AGND) 3 5 4 NC R1 R1 5kW COUT 2 x 10 mF 5 kW FB R2 FB VOUT 1.2 V (1 A) SW R2 10 kW VOUT 1.2 V (1 A) PGND L1 SW 3.3 mH 10 kW 1 6 P1 (AGND) 2 3 5 4 EN VIN PVIN 10 mF 2 x 10 mF FAN2002 FAN2001 Figure 1. Typical Application PIN ASSIGNMENT AND DESCRIPTION VIN 1 PGND 2 EN 3 P1 (AGND) 6 SW FB 1 5 NC PGND 2 4 FB SW 3 P1 (AGND) 6 EN 5 VIN 4 PVIN FAN2002 FAN2001 Figure 2. Pin Assignment (Top View) PIN DESCRIPTION Pin No. Pin Name Description FAN2001 P1 AGND Analog Ground. P1 must be soldered to the PCB ground. 1 VIN 2 PGND 3 EN Enable Input. Logic high enables the chip and logic low disables the chip, reducing the supply current to less than 1 mA. Do not float this pin. 4 FB Feedback Input. Adjustable voltage option, connect this pin to the resistor divider. 5 NC No Connection Pin. 6 SW Switching Node. This pin is connected to the internal MOSFET switches. Supply Voltage Input. Power Ground. This pin is connected to the internal MOSFET switches. This pin must be externally connected to AGND. FAN2002 P1 AGND Analog Ground. P1 must be soldered to the PCB ground. 1 FB 2 PGND Feedback Input. Adjustable voltage option, connect this pin to the resistor divider. 3 SW Switching Node. This pin is connected to the internal MOSFET switches. 4 PVIN Supply Voltage Input. This pin is connected to the internal MOSFET switches. 5 VIN Supply Voltage Input. 6 EN Enable Input. Logic high enables the chip and logic low disables the chip, reducing the supply current to less than 1 mA. Do not float this pin. Power Ground. This pin is connected to the internal MOSFET switches. This pin must be externally connected to AGND. www.onsemi.com 2 FAN2001/FAN2002 ABSOLUTE MAXIMUM RATINGS (Unless otherwise specified, all other voltages are referenced to AGND.) Min Max Unit VIN, PVIN −0.3 7 V Voltage On Any Other Pin −0.3 Parameter VIN V Lead Soldering Temperature (10 seconds) 260 _C Junction Temperature 150 _C 150 _C 8 _C/W Storage Temperature −65 Thermal Resistance−Junction to Tab (qJC), 3x3 mm 6−lead MLP (Note 1) Electrostatic Discharge Protection (ESD) Level (Note 2) HBM 4 CDM 1 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Junction to ambient thermal resistance, qJA, is a strong function of PCB material, board thickness, thickness and number of copper planes, number of via used, diameter of via used, available copper surface, and attached heat sink characteristics. 2. Using Mil Std. 883E, method 3015.7(Human Body Model) and EIA/JESD22C101−A (Charge Device Model). RECOMMENDED OPERATING CONDITIONS (Unless otherwise specified, all other voltages are referenced to AGND.) Min Parameter Typ Max Unit Supply Voltage Range 2.5 5.5 V Output Voltage Range, Adjustable Version 0.8 VIN V 1 A Output Current Inductor (Note 3) 3.3 mH Input Capacitor (Note 3) 10 mF 2 x 10 mF Output Capacitor (Note 3) Operating Ambient Temperature Range −40 +85 _C Operating Junction Temperature Range −40 +125 _C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 3. Refer to the Applications section for further details. www.onsemi.com 3 FAN2001/FAN2002 ELECTRICAL CHARACTERISTICS (VIN = VOUT + 0.6 V (min. 2.5 V) to 5.5 V, IOUT = 350 mA, VOUT = 1.2 V, EN = VIN, TA = −40_C to +85_C, Unless otherwise noted. Typical values are at TA = 25_C.) Symbol Parameter VIN Input Voltage IQ Quiescent Current Test Conditions Min 0 mA ≤ IOUT ≤ 600 mA 2.5 0 mA ≤ IOUT ≤ 1000 mA 2.7 V 5.5 V 35 mA R2 = 10 kW 50 mA R2 = 100 kW 25 mA VIN Rising 1.9 Hysteresis Enable Low Input Voltage 5.5 IOUT = 0 mA, Device is switching (Note 4) EN = GND Enable High Input Voltage Unit 20 Undervoltage Lockout Threshold VENL Max IOUT = 0 mA, Device is not switching Shutdown Supply Current VENH Typ 0.1 1 2.1 2.3 150 mA V mV 1.3 V 0.4 V IEN EN Input Bias Current EN = VIN or GND 0.01 0.1 mA RDS(on) PMOS On Resistance VIN = VGS = 5.5 V 250 350 mW VIN = VGS = 2.5 V 300 400 VIN = VGS = 5.5 V 200 300 VIN = VGS = 2.5 V 250 350 1300 1500 2000 mA 1000 1300 1500 kHz 0.1 1 mA 1 NMOS On Resistance ILIM P−channel Current Limit 2.5 V < VIN < 5.5 V Oscillator Frequency mW Ilkg_(N) N−channel Leakage Current VDS = 5.5 V Ilkg_(P) P−channel Leakage Current VDS = 5.5 V 0.1 Line Regulation IOUT ≤ 10 mA 0.16 %/V Load Regulation 350 mA ≤ IOUT ≤ 1000 mA 0.15 % 0.8 V Vref Reference Voltage Output DC Voltage Accuracy (Note 5) 0 mA ≤ IOUT ≤ 1000 mA −3 Over−Temperature Protection PWM Mode Only 350 mA ≤ IOUT ≤ 1000 mA Start−Up Time IOUT = 1000 mA, COUT = 20 mF Rising Temperature Hysteresis +3 mA % 150 _C 20 _C 800 ms Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Refer to the applications section for further details. 5. For output voltages ≤ 1.2 V a 40 mF output capacitor value is required to achieve a maximum output accuracy of 3% while operating in power save mode (PFM mode). www.onsemi.com 4 FAN2001/FAN2002 TYPICAL PERFORMANCE CHARACTERISTICS (TA = 25°C, CIN = 10 mF, COUT = 20 mF, L = 3.3 mH, R2 = 10 kW, unless otherwise noted.) 100 95 Efficiency (%) Efficiency (%) 90 85 VIN = 5 V VOUT = 3.3 V 80 VIN = 3.6 V VOUT = 3 V 75 70 VIN = 3.6 V VOUT = 1.2 V 65 60 1 10 100 1000 100 95 90 85 80 75 70 65 60 55 50 45 40 35 0.1 VIN = 3.9 V VIN = 5.5 V VOUT = 3.3 V R2 = 100 kW 1 10 Figure 3. Efficiency vs. Load Current 1.214 VOUT = 1.2 V R2 = 100 kW 1.210 80 70 VIN = 5.5 V VIN = 2.5 V 60 50 VIN = 5 V 1.212 Output Voltage (V) 90 Efficiency (%) 1000 Figure 4. Efficiency vs. Load Current 100 VIN = 3.6 V 1.208 1.206 1.204 1.202 1.200 1.198 1.196 40 1.194 30 0.1 1 10 100 1.192 1000 0 200 400 Figure 5. Efficiency vs. Load Current 80 R2 = 10 kW 50 40 30 R2 = 100 kW 20 10 1380 1360 VIN = 5.5 V 1340 1320 1300 VIN = 3.6 V 1280 1260 1240 VIN = 2.5 V 1220 0 2.5 3.0 1000 1400 Oscillator Frequency (kHz) 60 800 Figure 6. Output Voltage vs. Load Current VOUT = 1.2 V 70 600 Load Current (mA) Load Current (mA) Quiescent Current (mA) 100 Load Current (mA) Load Current (mA) 3.5 4.0 4.5 5.0 1200 −40 5.5 −20 0 20 40 60 80 Temperature (5C) Input Voltage (V) Figure 7. Quiescent Current vs. Input Voltage Figure 8. Frequency vs. Temperature www.onsemi.com 5 100 FAN2001/FAN2002 Inductor Current (200 mA/div) Inductor Current (200 mA/div) Output Voltage (5 mV/div) Output Voltage (20 mV/div) SW Node Voltage (2 V/div) SW Node Voltage (2 V/div) TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (TA = 25°C, CIN = 10 mF, COUT = 20 mF, L = 3.3 mH, R2 = 10 kW, unless otherwise noted.) Time (1 ms/div) Time (5 ms/div) 100 mA Figure 10. Power Save Mode Load Current Step Load Current Step Figure 9. PWM Mode 600 mA VOUT = 1.2 V Inductor Current (500 mA/div) Output Voltage (50 mV/div) Output Voltage (50 mV/div) Inductor Current (500 mA/div) VOUT = 1.2 V Time (10 ms/div) Time (10 ms/div) Inductor Current (500 mA/div) Inductor Current (200 mA/div) Voltage at Enable Pin (5 V/div) Figure 12. Load Transient Response Voltage at Enable Pin (5 V/div) Figure 11. Load Transient Response VOUT = 1.2 V IOUT = 10 mA Output Voltage (500 mV/div) Output Voltage (500 mV/div) 100 mA 600 mA Time (100 ms/div) VOUT = 1.2 V IOUT = 1000 mA Time (200 ms/div) Figure 14. Start−Up Response Figure 13. Start−Up Response www.onsemi.com 6 FAN2001/FAN2002 BLOCK DIAGRAM EN VIN DIGITAL SOFT START IS REF FB ERROR AMP CURRENT SENSE IS UNDER−VOLGATE LOCKOUT PFM COMP MOSFET DRIVER LOGIC CONTROL COMP SW 0.8 V GND IS OVER VOLTAGE COMP OSC SLOPE COMPENSATION REF FB NEG. LIMIT SENSE NEG. LIMIT COMP GND Figure 15. Block Diagram DETAILED OPERATION DESCRIPTION PFM (Power Save) Mode The FAN2001/FAN2002 is a step−down converter operating in a current−mode PFM/PWM architecture with a typical switching frequency of 1.3 MHz. At moderate to heavy loads, the converter operates in pulse−width− modulation (PWM) mode. At light loads the converter enters a power−save mode (PFM pulse skipping) to keep the efficiency high. As the load current decreases and the inductor current reaches negative value, the converter enters pulse−frequency−modulation (PFM) mode. The transition point for the PFM mode is given by the equation: 1* I OUT + V OUT PWM Mode 2 ǒ Ǔ V OUT V IN L f (eq. 1) The typical output current when the device enters PFM mode is 150 mA for input voltage of 3.6 V and output voltage of 1.2 V. In minimum. Consequently, the high efficiency is maintained at light loads. As soon as the output voltage falls below a threshold, set at 0.8% above the nominal value, the P−channel transistor is turned on and the inductor current ramps up. The P−channel switch turns off and the N−channel turns on as the peak inductor current is reached (typical 450 mA). The N−channel transistor is turned off before the inductor current becomes negative. At this time the P−channel is switched on again starting the next pulse. The converter In PWM mode, the device operates at a fixed frequency of 1.3 MHz. At the beginning of each clock cycle, the P−channel transistor is turned on. The inductor current ramps up and is monitored via an internal circuit. The P−channel switch is turned off when the sensed current causes the PWM comparator to trip when the output voltage is in regulation or when the inductor current reaches the current limit (set internally to typically 1500 mA). After a minimum dead time the N−channel transistor is turned on and the inductor current ramps down. As the clock cycle is completed, the N−channel switch is turned off and the next clock cycle starts. www.onsemi.com 7 FAN2001/FAN2002 UVLO and Soft Start continues these pulses until the high threshold (typical 1.6% above nominal value) is reached. A higher output voltage in PFM mode gives additional headroom for the voltage drop during a load transient from light to full load. The voltage overshoot during this load transient is also minimized due to active regulation during turn on of the N−channel rectifier switch. The device stays in sleep mode until the output voltage falls below the low threshold. The FAN2001/ FAN2002 enters the PWM mode as soon as the output voltage can no longer be regulated in PFM with constant peak current. The reference and the circuit remain reset until the VIN crosses its UVLO threshold. The FAN2001/FAN2002 has an internal soft−start circuit that limits the in−rush current during start−up. This prevents possible voltage drops of the input voltage and eliminates the output voltage overshoot. The soft−start is implemented as a digital circuit increasing the switch current in four steps to the P−channel current limit (1500 mA). Typical start−up time for a 20 mF output capacitor and a load current of 1000 mA is 800 ms. 100% Duty Cycle Operation Short Circuit Protection The switch peak current is limited cycle−by−cycle to a typical value of 1500 mA. In the event of an output voltage short circuit, the device operates with a frequency of 400 kHz and minimum duty cycle, therefore the average input current is typically 200 mA. As the input voltage approaches the output voltage and the duty cycle exceeds the typical 95%, the converter turns the P−channel transistor continuously on. In this mode the output voltage is equal to the input voltage minus the voltage drop across the P−channel transistor: V OUT + V IN * I LOAD (eq. 2) (R DS(on) ) R L) Thermal Shutdown When the die temperature exceeds 150°C, a reset occurs and will remain in effect until the die cools to 130°C, at that time the circuit will be allowed to restart. where: RDS(on) = P−channel Switch ON Resistance ILOAD = Output Current = Inductor DC Resistance RL APPLICATIONS INFORMATION Setting the Output Voltage Inductor Selection The internal reference is 0.8 V (Typical). The output voltage is divided by a resistor divider, R1 and R2 to the FB pin. The output voltage is given by: The inductor parameters directly related to the device’s performances are saturation current and dc resistance. The FAN2001/FAN2002 operates with a typical inductor value of 3.3 mH. The lower the dc resistance, the higher the efficiency. For saturation current, the inductor should be rated higher than the maximum load current plus half of the inductor ripple current. This is calculated as follows: ǒ V OUT + V REF 1) R1 R2 Ǔ (eq. 3) where: R1 + R2 < 800 kW 1* According to this equation, and assuming desired output voltage of 1.5096 V, and given R2 = 10 kW, the calculated value of R1 is 8.87 kW. If quiescent current is a key design parameter a higher value feedback resistor can be used (e.g. R2 = 100 kW) and a small bypass capacitor of 10 pF is required in parallel with the upper resistor as shown in Figure 16. VIN CIN 10 mF PGND EN 3.3 mH 1 2 3 6 P1 (AGND) 5 4 R1 5 kW FB L V OUT V IN (eq. 4) f where: = Inductor Ripple Current DIL f = Switching Frequency L = Inductor Value Some recommended inductors are suggested in the table below: VOUT 1.2 V (1 A) SW NC DI L + V OUT ǒ Ǔ COUT 2 x 10 mF Table 1. RECOMMENDED INDUCTORS Inductor Value Vendor 3.3 mH Panasonic ELL6PM3R3N 3.3 mH Murata LQS66C3R3M04 R2 10 kW Figure 16. Setting the Output Voltage www.onsemi.com 8 Part Number FAN2001/FAN2002 Capacitors Selection For best performances, a low ESR input capacitor is required. A ceramic capacitor of at least 10 mF, placed as close to the VIN and AGND pins of the device is recommended. The output capacitor determines the output ripple and the transient response. Table 2. RECOMMENDED CAPACITORS Capacitor Value Vendor Part Number 10 mF Taiyo Yuden JMK212BJ106MG TDK C2012X5ROJ106K JMK316BJ106KL C3216X5ROJ106M Murata Figure 18. Recommended PCB Layout (FAN2002) GRM32ER61C106K Therefore, use wide traces for high current paths and place the input capacitor, the inductor, and the output capacitor as close as possible to the integrated circuit terminals. In order to minimize voltage stress to the device resulting from ever present switching spikes, use an input bypass capacitor with low ESR. Note that the peak amplitude of the switching spikes depends upon the load current; the higher the load current, the higher the switching spikes. The resistor divider that sets the output voltage should be routed away from the inductor to avoid RF coupling. The ground plane at the bottom side of the PCB acts as an electromagnetic shield to reduce EMI. For more board layout recommendations download the application note “PCB Grounding System and FAN2001/FAN2011 High Performance DC−DC Converters” (AN−42036/D). PCB Layout Recommendations The recommended PCB layout is shown in Figures 17 and 18. The inherently high peak currents and switching frequency of power supplies require a careful PCB layout design. Figure 17. Recommended PCB Layout (FAN2001) FAIRCHILD SEMICONDUCTOR is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN6 3x3, 0.95P CASE 511CP ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13603G WDFN6 3X3, 0.95P DATE 31 JUL 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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