FAN5110 — Two-Phase, Bootstrapped, 12V NMOSFET
Half-Bridge Driver
Features
Description
Two-phase, N-channel MOSFET driver in a Single
FAN5110 contains two N-channel MOSFET drivers on a
single die in one package. It replaces two single-phase
drivers in a multiple-phase PWM design. Each phase is
specifically designed to drive both the upper and lower
N-channel power MOSFETs of a synchronous rectified
buck converter at high switching frequencies.
Compact Package for Multi-phase Buck Converter
Applications
Each Phase Drives the N-channel High-side and
Low-side MOSFETs in a Synchronous Buck
Configuration
Variable High-side and Low-side Gate Drive Voltages
This two-phase driver, combined with a Fairchild multiphase PWM controller and power MOSFETs, forms a
complete V-core power supply solution for advanced
microprocessors.
Internal Adaptive “Shoot-through” Protection
Fast Rise and Fall Times
High Switching Frequency: up to 1 MHz
Common Enable (EN) Turns Off both Upper and
The lower drivers are powered externally through the
PVCC pin. The PVCC pin is normally connected to VCC,
which drives the lower MOSFET’s gates at 12VGS.
Connecting the PVCC pin to a voltage lower than VCC
lowers the VGS voltage, resulting in much less driver
power dissipation. This is especially valuable when
driving MOSFETs with high gate charge (Qgtot) and in
applications requiring high switching frequencies.
Two-phase Driver Reduces Printed Circuit Board
Area
for Flexibility and Performance Optimization at
Higher Frequencies
Lower Output FETs
The driver’s adaptive shoot-through protection prevents
the upper and lower MOSFETs from conducting
simultaneously. The FAN5110 is rated for operation
from 0°C to +85°C and is available in a low-cost 16-pin
(Small Outline Integrated Circuit) SOIC package and a
higher power MLP-16 package.
TTL-compatible PWM and EN Inputs
Under-Voltage Lockout Protection Feature
Available in SOIC-16 and MLP-16 Packages
Applications
Related Resources
Multi-Phase VRM/VRD Regulators for
Microprocessor Supplies
Two Separate, Single-phase Supply Designs
High-Current, High-Frequency DC/DC Converters
High-Power Modular Supplies
General-Purpose, TTL Input, 12V Driver for
AN-6003 — “Shoot-through” in Synchronous
Buck Converters
Half-Bridge and Full-Bridge Applications
Ordering Information
Part Number
Operating
Temperature Range
FAN5110MX
0°C to 85°C
SOIC-16
RoHS
Tape and Reel
2500
FAN5110MPX
0°C to 85°C
MLP-16, 4x4mm
RoHS
Tape and Reel
2500
Package
Eco Status
Packing
Method
Quantity
Per Reel
For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
© 2006 Fairchild Semiconductor Corporation
FAN5110 • Rev. 1.1.0
www.fairchildsemi.com
FAN5110 — Two-Phase, Bootstrapped, 12V NMOSFET Half-Bridge Driver
May 2008
Figure 1. Packages (Top View)
Pin Definitions
MLP
SOIC
Name
Description
1
15
SW2
Switch Node Input. Connect as shown in Figure 1. SW provides return for the high-side
bootstrapped driver and acts as a sense point for the adaptive shoot-through protection.
2
16
HDRV2
High-Side Gate Drive Output. Connect to the gate of the high-side power MOSFET(s).
3
1
BOOT2
Bootstrap Supply Input. Provides voltage supply to the high-side MOSFET driver.
Connect to bootstrap capacitor and diode.
4
2
EN
5
3
PWM2
6
4
VSS
7
5
PWM1
8
6
VCC
9
7
BOOT1
Bootstrap Supply Input. Provides voltage supply to the high-side MOSFET driver.
Connect to bootstrap capacitor and diode.
10
8
HDRV1
High Gate Drive Output. Connect to the gate of the high-side power MOSFET(s).
11
9
SW1
12
10
PGND1
Power Ground. Connect directly to the source of low-side MOSFET(s) and CVCC.
13
11
LDRV1
Low-Side Gate Drive Output. Connect to the gate of the low-side power MOSFET(s).
14
12
PVCC
Lower Gate Drive Voltage. This is the input supply for the lower drivers. The VGS of the
lower MOSFETs matches this voltage. Connect to VCC or a lower voltage.
15
13
LDRV2
Lower Gate Drive Output. Connect to the gate of the low-side power MOSFET(s).
16
14
PGND2
Power Ground. Connect directly to the source of low-side MOSFET(s) and CVCC.
NA
Paddle
MLP Package Only. Connected to ground inside the chip. Connect to ground plane for
lowest thermal resistance.
Enable. When LOW, this pin disables FET switching (HDRV and LDRV are held LOW).
This pin is common for both drivers (previously referred to as OD#).
PWM Signal Input. Accepts a logic-level PWM signal from the controller.
FAN5110 — Two-Phase, Bootstrapped, 12V NMOSFET Half-Bridge Driver
Pin Configurations
Signal Ground. Connect directly to the ground plane.
PWM Signal Input. Accepts a logic-level PWM signal from the controller.
Power Input Voltage. +12V power for the internal logic. Bypass with a minimum 1µF
X7R or 4.7µF X5R ceramic capacitor.
Switch Node Input. Connect as shown in Figure 1. SW provides return for the high-side
bootstrapped driver and acts as a sense point for the adaptive shoot-through protection.
© 2006 Fairchild Semiconductor Corporation
FAN5110 • Rev. 1.1.0
www.fairchildsemi.com
2
Figure 2. Typical Two-Phase Application
Block Diagram
VCC
VCC
EN
Boot
PWM
HDRV
FAN5110 — Two-Phase, Bootstrapped, 12V NMOSFET Half-Bridge Driver
Application Diagram
TFall
Delay
1.2V
TFall
Delay
VCC/3
SW
1.2V
VSS
PVCC
LDRV
GND
Figure 3. Functional Block Diagram, Each Side
© 2006 Fairchild Semiconductor Corporation
FAN5110 • Rev. 1.1.0
www.fairchildsemi.com
3
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable
above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition,
extended exposure to stresses above the recommended operating conditions may affect device reliability. Absolute
maximum ratings are stress ratings only. Unless otherwise specified, voltages referenced to GND.
Parameter
VCC and PVCC to GND
Conditions
Min.
Max.
Unit
Continuous
-0.3
15.0
V
Transient (t < 4ns)
(1)
PWM and EN Pins
19.0
V
5.5
V
-1
15
V
Continuous
SW to GND
Transient (t < 100ns)
(1)
Continuous
BOOT to SW
-5
25
V
-0.3
15.0
V
-2
17
V
-0.3
30.0
V
38
V
VSW -1.0
VBOOT+0.3
V
-0.5
VCC
V
-2.0
VCC+0.3
V
-2.0
VCC+2.0
V
Transient (t < 20ns)
BOOT to GND
Continuous
Transient (t < 100ns)
(1)
HDRV
Continuous
LDRV
-0.3
-0.3
Transient (t < 200ns)
(1)
Transient (t < 20ns)
Note:
1. For transient derating beyond the levels indicated, refer to Figure 17 and Figure 18.
Thermal Information
Symbol
TJ
TSTG
Parameter
Min.
Junction Temperature
0
Storage Temperature
-65
Typ.
Max.
Unit
+150
°C
+150
°C
TL
Lead Soldering Temperature, 10 Seconds
+300
°C
TVP
Vapor Phase, 60 Seconds
+215
°C
TLI
Infrared, 15 Seconds
+220
°C
PD
Power Dissipation, TA = 25°C, TJMAX = 125°C
850
mW
θJC
Thermal Resistance, SO-16, Junction-to-Board
40
°C/W
θJA
Thermal Resistance, SO-16, Junction-to-Ambient
117
°C/W
θJC
Thermal Resistance, MLP16, Junction-to-Case
5
°C/W
θJA
Thermal Resistance, MLP16, Junction-to-Ambient
37
°C/W
FAN5110 — Two-Phase, Bootstrapped, 12V NMOSFET Half-Bridge Driver
Absolute Maximum Ratings
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to Absolute Maximum Ratings.
Symbol
VCC
Parameter
Conditions
Min.
Typ.
Max.
Unit
Supply Voltage
VCC to Ground
10.0
12.0
13.5
V
PVCC Input Voltage
PVCC to Ground
8.0
12.0
13.5
V
VIO
Boot Diode Anode Voltage
Anode to Ground
8.0
12.0
13.5
V
TA
Ambient Temperature
0
+85
°C
TJ
Junction Temperature
0
+125
°C
PVCC
© 2006 Fairchild Semiconductor Corporation
FAN5110 • Rev. 1.1.0
www.fairchildsemi.com
4
VCC and PVCC = 12V, and TA = 25°C using the circuit in Figure 4 unless otherwise noted. The “•” denotes
specifications that apply over the full operating temperature range.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
6.4
12.0
13.5
V
4.1
8.0
mA
4.7
5.3
V
Input Supply
VCC
VCC and PVCC Voltage Range
•
ICC
VCC Current
EN = 0V
VUYR
VCC Rising
1V/ms
VUVF
VCC Falling
1V/ms
VHYS
VCC Hysteresis
•
3.4
4.2
V
175
325
mV
EN Input
VIH(EN)
Input High Voltage
•
VIL(EN)
Input Low Voltage
•
Input Hysteresis
•
VHYS(EN)
IEN
tpdl(EN)
tpdh(EN)
Input Current
EN = 3.0V
(3)
Propagation Delay
•
2.0
V
0.8
550
-300
Figure 5
V
mV
+300
nA
25
40
ns
15
30
ns
PWM Input
VIH(PWM)
Input High Voltage
•
VIL(PWM)
Input Low Voltage
•
Input Hysteresis
•
Input Current
•
-1
•
700
VHYS(PWM)
IIL(PWM)
2.0
V
0.8
550
V
mV
+1
µA
1000
1300
Ω
VBOOT – VSW = 12V
2.5
3.3
Ω
VDS = -10V
2.0
VBOOT – VSW = 12V
1.1
VDS = 10V
2.7
SW Pin
RSW
SW Pin Bleeder
EN = 0V, VSW = 4.0V
FAN5110 — Two-Phase, Bootstrapped, 12V NMOSFET Half-Bridge Driver
Electrical Characteristics
High-Side Driver
RHUP
Output Resistance, Sourcing
ISOURCE(LDRV) Source Current
(3)
RHDN
Output Resistance, Sinking
ISINK(HDRV)
(3)
tR(HDRV)
tF(HDRV)
tpdh(HDRV)
tpdl(HDRV)
Sink Current
Transition Times
(3, 5)
(3, 4)
Propagation Delay
Figure 4
Figure 6
A
1.4
Ω
A
30
45
ns
25
30
ns
35
50
ns
25
40
ns
Continued on the following page…
© 2006 Fairchild Semiconductor Corporation
FAN5110 • Rev. 1.1.0
www.fairchildsemi.com
5
VCC and PVCC = 12V, and TA = 25°C using the circuit in Figure 4 unless otherwise noted. The “•” denotes
specifications that apply over the full operating temperature range.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
6.4
12.0
13.5
V
2.0
2.3
Ω
Low-Side Driver
PVCC
RLUP
PVCC Voltage Range
Output Resistance, Sourcing
ISOURCE(LDRV) Source Current
(3)
VDS = -10V
RLDN
Output Resistance, Sinking
ISINK(LDRV)
(3)
Sink Current
2.7
1.0
VDS = 10V
Bottom Gate Threshold
1.0
1.3
BGhys
Bottom Gate Hysteresis
0.5
0.8
tF(LDRV)
Transition Times
(3, 5)
tpdh(LDRV)
tpdl(LDRV)
Figure 4
Figure 6
(3, 4)
Propagation Delay
tpdh(LDF)
1.3
3.5
BGth
tR(LDRV)
A
See Adaptive Gate Drive
Circuit Description
Ω
A
1.6
V
V
25
35
ns
20
30
ns
20
30
ns
15
20
ns
170
ns
Notes:
2. Limits at operating temperature extremes are guaranteed by design, characterization, and statistical quality control.
3. Specifications guaranteed by design and characterization (not production tested).
4. For propagation delays, tpdh refers to low-to-high signal transition. tpdl refers to high-to-low signal transition.
5. Transition times are defined for 10% and 90% of DC values.
© 2006 Fairchild Semiconductor Corporation
FAN5110 • Rev. 1.1.0
FAN5110 — Two-Phase, Bootstrapped, 12V NMOSFET Half-Bridge Driver
Electrical Characteristics (Continued)
www.fairchildsemi.com
6
10k
33k
Figure 4. Test Circuit
EN
VIH(EN)
VIL(EN)
tpdl(EN)
tpdh(EN)
Figure 5. Enable Timing
FAN5110 — Two-Phase, Bootstrapped, 12V NMOSFET Half-Bridge Driver
Test Diagrams
Figure 6. Adaptive Gate Drive Timing
© 2006 Fairchild Semiconductor Corporation
FAN5110 • Rev. 1.1.0
www.fairchildsemi.com
7
Performance characteristics achieved using the test circuit shown in Figure 4.
Figure 7. PWM Rise Time Waveforms
Figure 8. PWM Fall Time Waveforms
Figure 9. HDRV Rise and Fall Times vs. CLOAD
Figure 10. LDRV Rise and Fall Times vs. CLOAD
Figure 11. HDRV Resistance vs. Temperature
Figure 12. LDRV Resistance vs. Temperature
© 2006 Fairchild Semiconductor Corporation
FAN5110 • Rev. 1.1.0
FAN5110 — Two-Phase, Bootstrapped, 12V NMOSFET Half-Bridge Driver
Typical Performance Characteristics
www.fairchildsemi.com
8
Performance characteristics achieved using the test circuit shown in Figure 4.
3000
12V (VCC)
12V (VCC)
ID (mA)
2000
10V
2000
ID (mA)
10V
8V
1000
8V
1000
6V
0
6V
0
0
5
10
0
5
VDS (V)
Figure 13.
10
VDS (V)
HDRV Pull-Up (Sourcing)
Figure 14.
LDRV Pull-Up (Sourcing)
3000
12V (VCC)
3000
12V (VCC)
10V
10V
ID (mA)
ID (mA)
8V
2000
6V
8V
2000
6V
1000
1000
0
0
5
0
10
0
5
VDS (V)
Figure 15.
Figure 17.
VDS (V)
HDRV Pull-Down (Sinking)
Figure 16.
Negative SW Voltage Transient
© 2006 Fairchild Semiconductor Corporation
FAN5110 • Rev. 1.1.0
10
FAN5110 — Two-Phase, Bootstrapped, 12V NMOSFET Half-Bridge Driver
Typical Performance Characteristics (Continued)
Figure 18.
LDRV Pull-Down (Sinking)
Negative LDRV Voltage Transient
www.fairchildsemi.com
9
Performance characteristics below were achieved using a modified version of the test circuit shown in Figure 4.
The BOOT and PVCC pins were disconnected from VCC; a boot diode was connected in series with the BOOT pin;
and the PVCC and boot diode anode were connected to a variable voltage power supply. VCC was held constant at
12V during the test.
PVCC Current vs Voltage and Frequency
BOOT Current vs Voltage and Frequency
90
80
PVCC Current (mA)
70
60
BOOT Current (mA)
12
10
8
6
5
80
50
40
30
20
70
12
60
8
10
6
50
5
40
30
20
10
10
0
200k
400k
600k
800k
0
200k
1Meg
400k
PVCC Operating Current
Figure 20.
VCC Current vs Voltage and Frequency
5.80
5.40
5.20
5.00
4.80
4.60
4.40
4.20
4.00
200k
400k
600k
800k
1Meg
800k
600k
400k
200k
2000
1500
1000
500
5
VCC Operating Current
© 2006 Fairchild Semiconductor Corporation
FAN5110 • Rev. 1.1.0
Boot Operating Current
0
1Meg
Frequency
Figure 21.
1Meg
Driver Dissipation, One Side
vs Voltage and Frequency
2500
12
10
8
6
5
Power Dissipation (mW)
VCC Current (mA)
5.60
800k
Frequency
Frequency
Figure 19.
600k
FAN5110 — Two-Phase, Bootstrapped, 12V NMOSFET Half-Bridge Driver
Typical Performance Characteristics (Continued)
Figure 22.
6
8
10
PVCC and BOOT Voltage
12
Driver Power Dissipation, One Side
www.fairchildsemi.com
10
The FAN5110 contains two half-bridge MOSFET drivers
in a single 16-pin package. Each driver is optimized for
driving N-channel MOSFETs in a synchronous buck
converter topology. Each driver’s TTL-compatible PWM
input signal is all that is required to properly drive the
high-side and low-side MOSFETs. The following
sections apply to each driver.
Adaptive Gate Drive Circuit
The FAN5110 embodies an advanced design that
ensures
minimum
MOSFET
dead-time,
while
eliminating potential shoot-through (cross-conduction)
currents. It senses the state of the MOSFETs and
adjusts the gate drive, adaptively, to ensure they do not
conduct simultaneously. Refer to the gate drive rise and
fall time waveforms shown in Figure 7 and Figure 8 for
the relevant timing information.
Low-Side Driver
The low-side driver (LDRV) is designed to drive groundreferenced, low-RDS(on), N-channel MOSFETs. The
power for LDRV is internally connected to the PVCC
pin. When the driver is enabled, the driver’s output is
180° out of phase with the PWM input. When the
FAN5110 is disabled (EN = 0V), LDRV is held low.
To prevent overlap during the low-to-high switching
transition (QLo OFF to QLo ON), the adaptive circuitry
monitors the voltage at the LDRV pin. When the PWM
signal goes HIGH, QHi begins to turn OFF after a
propagation delay, as defined by the tpdl(LDRV) parameter.
Once the LDRV pin is discharged below ~1.3V, QHi
begins to turn ON after adaptive delay tpdh(HDRV).
High-Side Driver
To preclude overlap during the high-to-low transition
(QLo OFF to QHi ON), the adaptive circuitry monitors
the voltage at the SW pin. When the PWM signal goes
LOW, QLo begins to turn OFF after a propagation delay
(tpdl(HDRV)). Once the SW pin falls below VCC/3, QHi
begins to turn ON after adaptive delay tpdh(LDRV).
The FAN5110’s high-side driver (HDRV) is designed to
drive a floating N-channel MOSFET. The bias voltage
for the high-side driver is developed by a bootstrap
supply circuit, consisting of an external diode and
bootstrap capacitor (CBOOT).
During start-up, SW is held at GND, allowing CBOOT to
charge to VCC through the diode. When the PWM input
goes high, HDRV begins to charge the high-side
MOSFET gate (QHi). During this transition, charge is
transferred from CBOOT to QHi’s gate. As QHi turns on,
SW rises to VIN, forcing the BOOT pin to VIN + VC(BOOT),
which provides sufficient VGS enhancement for QHi. To
complete the switching cycle, QHi is turned off by pulling
HDRV to SW. CBOOT is recharged to VCC when SW falls
to GND. HDRV output is in phase with PWM input. When
the driver is disabled, the high-side gate is held low.
© 2006 Fairchild Semiconductor Corporation
FAN5110 • Rev. 1.1.0
VGS of QLo is also monitored. When VGS(QLo) is
discharged below ~1.3V, a secondary adaptive delay is
initiated, which results in QHi being driven ON after
tpdh(LDF), regardless of the SW state. This function is
implemented to ensure that CBOOT is recharged after
each switching cycle, particularly for cases where the
power converter is sinking current and the SW voltage
does not fall below the VCC/3 adaptive threshold. The
secondary delay tpdh(LDF) is longer than tpdh(LDRV).
FAN5110 — Two-Phase, Bootstrapped, 12V NMOSFET Half-Bridge Driver
Circuit Description
www.fairchildsemi.com
11
Calculation of PHDRV:
Supply Capacitor Selection
PQH =
For the supply input (VCC), a local ceramic bypass
capacitor is recommended to reduce the noise and to
supply the peak current. Use at least a 1μF, X7R or
X5R capacitor, close to the VCC and PGND pins. A 1µF
bypass capacitor should be connected at the PVCC pin
to PGND.
The bootstrap circuit uses a charge storage capacitor
(CBOOT) and an external diode, as shown in Figure 2.
These components should be selected after the highside MOSFET has been chosen. The required
capacitance is determined using the following equation:
QG
ΔVBOOT
PH(R ) = PQH ×
R HUP
R HUP + R E + R G
(7)
PH(F) = PQH ×
RHDN
RHUP + RE + R G
(8)
(1)
As described in Equations 6 and 7, the total power
dissapated in driving the gate is divided in proportion to
the resistances in series with the MOSFET internal gate
node, as shown in Figure 23.
BOOT
Q1
R
RH
HDRV
G
RG
RHDN
(2)
SW
where fSW is the switching frequency of the controller.
Figure 23. Driver Dissipation Model
The peak surge current rating of the diode should be
checked in-circuit, since this is dependent on the
equivalent impedance of the entire bootstrap circuit,
including the PCB traces.
RG is the gate resistance internal to the FET. RE is the
external gate drive resistor implemented in many
designs. Note that the introduction of RE can reduce
driver power dissipation, but excess RE may cause
errors in the “adaptive gate drive” circuitry. In particular,
adding RE in the low drive circuit could result in shootthrough. For more information, refer to Application Note
AN-6003, "Shoot-through" in Synchronous Buck Converters.
Thermal Considerations
The total device dissipation is the total of both phases.
Device dissipation for a phase can be calculated as:
Calculation of PLDRV:
(3)
PQH =
where:
PQ represents quiescent power dissipation:
PQ = VCC × [4mA + 0.036(f SW − 100 )]
(6)
QGH is total gate charge of the upper FET for its
applied VGS.
The average diode forward current, IF(AVG), can be
estimated by:
PDtot = PQ + PHDRV + PLDRV
(5)
where:
PH(R) and PH(F) are dissipations for the rising and
falling edges, respectively.
where QG is the total gate charge of the high-side
MOSFET and ΔVBOOT is the voltage droop allowed on
the high-side MOSFET drive. For example, the QG of
the FDD6696 MOSFET is about 35nC at 12VGS. For an
allowed droop of ~300mV, the required bootstrap
capacitance is 100nF. A good quality ceramic capacitor
must be used.
I f ( AVG ) = Q G ATE × fSW
× QGH × VGS( Q1) × fSW
PHDRV = PH(R ) + PH(F )
Bootstrap Circuit
CBOOT =
1
2
FAN5110 — Two-Phase, Bootstrapped, 12V NMOSFET Half-Bridge Driver
Application Information
1
2
× QGH × VGS( Q1) × fSW
PLDRV = PL(R ) + PL(F )
(4)
PLDRV is dissipation of the lower FET driver.
(10)
PL(R ) = PQL ×
R LUP
R LUP + R E + R G
(11)
PL(F ) = PQL ×
R LDN
R HDN + R E + R G
(12)
fSW is switching frequency (in kHz).
PHDRV represents the power dissipation of the upper
FET driver.
(9)
where:
PL(R) and PL(F) are internal dissipations for the rising
and falling edges, respectively.
QGL is total gate charge of the lower FET for its
applied VGS.
© 2006 Fairchild Semiconductor Corporation
FAN5110 • Rev. 1.1.0
www.fairchildsemi.com
12
The VCC bypass capacitor must be located as close
Use the following general guidelines when designing
printed circuit boards (see Figure 24):
as possible to the VCC and VSS pins of the device.
This is also true for the PVCC bypass capacitor (PVCC
and the PGND pins).
Trace out the high-current paths and use short, wide
(>25 mil) traces to make these connections. If vias
are required use multiple vias to lower the
inductance.
Use multiple vias to other layers when possible to
maximize the conduction of heat away from the
package. This is particularly true for the paddle of the
MLP package, which can be connected with vias to
the internal ground plane of the board.
Connect the PGND pin as close as possible to the
source of the lower MOSFET.
Figure 24. Recommended Layout Examples
© 2006 Fairchild Semiconductor Corporation
FAN5110 • Rev. 1.1.0
FAN5110 — Two-Phase, Bootstrapped, 12V NMOSFET Half-Bridge Driver
Layout Considerations
www.fairchildsemi.com
13
10.00
9.80
A
8.89
16
9
B
4.00
3.80
6.00
PIN ONE
INDICATOR
1.75
1
5.6
8
0.51
0.35
1.27
(0.30)
0.25
M
1.27
C B A
0.65
LAND PATTERN RECOMMENDATION
1.75 MAX
1.50
1.25
SEE DETAIL A
0.25
0.10
C
0.25
0.19
0.10 C
0.50
0.25 X 45°
(R0.10)
NOTES: UNLESS OTHERWISE SPECIFIED
GAGE PLANE
(R0.10)
0.36
8°
0°
A) THIS PACKAGE CONFORMS TO JEDEC
MS-012, VARIATION AC, ISSUE C.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD
FLASH AND TIE BAR PROTRUSIONS
D) CONFORMS TO ASME Y14.5M-1994
E) LANDPATTERN STANDARD: SOIC127P600X175-16AM
F) DRAWING FILE NAME: M16AREV12.
FAN5110 — Two-Phase, Bootstrapped, 12V NMOSFET Half-Bridge Driver
Physical Dimensions
SEATING PLANE
0.90
0.50
(1.04)
DETAIL A
SCALE: 2:1
Figure 25. 16-Lead, Small Outline Integrated Circuit (SOIC) Package, 0.150 inches Narrow, JEDEC MS-012
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify
or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically
the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/
© 2006 Fairchild Semiconductor Corporation
FAN5110 • Rev. 1.1.0
www.fairchildsemi.com
14
PIN #1 IDENT
TOP VIEW
RECOMMENDED LAND PATTERN
SIDE VIEW
PIN #1 IDENT
FAN5110 — Two-Phase, Bootstrapped, 12V NMOSFET Half-Bridge Driver
Physical Dimensions
BOTTOM VIEW
A. CONFORMS TO JEDEC REGISTRATION MO-220,
VARIATION WGGC, DATED MAY/2005
B. DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 1994
MLP16DrevB
Figure 26.
16 Lead MLP, JEDEC MO-220, 4mm Square
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify
or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically
the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/
© 2006 Fairchild Semiconductor Corporation
FAN5110 • Rev. 1.1.0
www.fairchildsemi.com
15
FAN5110 — Two-Phase, Bootstrapped, 12V NMOSFET Half-Bridge Driver
© 2006 Fairchild Semiconductor Corporation
FAN5110 • Rev. 1.1.0
www.fairchildsemi.com
16
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