FAN7171M-F085

600 V / 4 A, High-Side Automotive Gate Driver IC FAN7171-F085 Description The FAN7171-F085 is a monolithic high−side gate drive IC that can drive high−speed MOSFETs and IGBTs that operate up to +600 V. It has a buffered output stage with all NMOS transistors designed for high pulse current driving capability and minimum cross−conduction. ON Semiconductor’s high−voltage process and common−mode noise-canceling techniques provide stable operation of the high−side driver under high-dv/dt noise circumstances. An advanced level−shift circuit offers high−side gate driver operation up to VS = −9.8 V (typical) for VBS = 15 V. The UVLO circuit prevents malfunction when VBS is lower than the specified threshold voltage. The high−current and low−output voltage-drop feature make this device suitable for sustaining switch drivers and energy−recovery switch drivers in automotive motor drive inverters, switching power supplies, and high−power DC−DC converter applications. • SOIC8 CASE 751EB ORDERING INFORMATION Device Features • • • • • • • • www.onsemi.com Floating Channel for Bootstrap Operation to +600 V 4 A Sourcing and 4 A Sinking Current Driving Capability Common−Mode dv/dt Noise−Cancelling Circuit 3.3 V and 5 V Input Logic Compatible Output In−phase with Input Signal Under− Voltage Lockout for VBS 25 V Shunt Regulator on VDD and VBS 8−SOIC Package, Case 751EB (JEDEC MS−012, 0.150 inch Narrow Body) Automotive Qualified to AEC Q100 for Ambient Operating Temperature from −40°C to 125°C FAN7171M-F085 FAN7171MX−F085 Package Shipping† Case 751EB (Pb−Free / Halogen Free) Tube Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1. These devices passed wave soldering test by JESD22A−111. 2. A suffix as “…F085P” has been temporarily introduced in order to manage a double source strategy as ON Semiconductor has officially announced in Aug 2014. Applications • Common Rail Injection Systems • DC−DC Converter • Motor Drive (Electric Power Steering, Fans) Related Product Resources • FAN7171−F085 Product Folder • AN−6076 Design and Application Guide of Bootstrap Circuit for High−Voltage Gate−Drive IC • AN−8102 200 Recommendations to Avoid Short Pulse Width Issues • • in HVIC Gate Driver Applications AN−9052 Design Guide for Selection of Bootstrap Components AN−4171 FAN7085 High−Side Gate Driver− Internal Recharge Path Design Considerations © Semiconductor Components Industries, LLC, 2013 April, 2021 − Rev. 4 1 Publication Order Number: FAN7171−F085/D FAN7171−F085 TYPICAL APPLICATION VIN 15 V RBOOT DBOOT FAN7171_F805 VB 8 1 VDD PWM R1 2 IN C1 3 NC 4 GND HO 7 VS 6 NC 5 CBOOT L1 R2 C2 D1 VOUT Figure 1. Typical Application BLOCK DIAGRAM GND 4 2 VDD UVLO PULSE GENERATOR IN 25 V 110 K 1 NOISE CANCELLER R S R Q Pins 3 and 5 are no connection Figure 2. Block Diagram PIN CONFIGURATION VDD 1 IN 2 NC 3 GND 4 8 VB FAN7371 7 HO 6 VS 5 NC Figure 3. Pin Assignment (Top Through View) www.onsemi.com 2 Shoot−through current Compensated gate driver VDD 8 VB 7 HO 6 VS 25 V FAN7171−F085 Table 1. PIN DESCRIPTIONS Pin # Name 1 VDD Description 2 IN Logic Input for High−Side Gate Driver Output 3 NC No Connection 4 GND 5 NC No Connection 6 VS High−Voltage Floating Supply Return 7 HO High−Side Driver Output 8 VB High−Side Floating Supply Supply Voltage Ground Table 2. ABSOLUTE MAXIMUM RATINGS Symbol Characteristics VS High−Side Floating Offset Voltage VB High−Side Floating Supply Voltage (Note 3) Max. Unit VB−VSHUNT VB+0.3 V −0.3 625.0 V VS−0.3 VB+0.3 V Low−Side and Logic Supply Voltage (Note 3) −0.3 VSHUNT V Logic Input Voltage −0.3 VDD+0.3 V ±50 V/ns 0.625 W VHO High−Side Floating Output Voltage VDD VIN dVS/dt Min. Allowable Offset Voltage Slew Rate PD Power Dissipation (Notes 4, 5, 6) θJA Thermal Resistance 200 °C/W TJ Junction Temperature −55 150 °C TSTG Storage Temperature −55 150 °C Operating Ambient Temperature −40 125 °C TA ESD Human Body Model (HBM) 2000 Charge Device Model (CDM) 500 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 3. This IC contains a shunt regulator on VDD and VBS with a normal breakdown voltage of 25 V. Please note that this supply pin should not be driven by a low−impedance voltage source greater than the VSHUNT specified in the Electrical Characteristics section. 4. Mounted on 76.2 x 114.3 x 1.6 mm PCB (FR−4 glass epoxy material). 5. Refer to the following standards: JESD51−2: Integral circuits thermal test method environmental conditions, natural convection, and JESD51−3: Low effective thermal conductivity test board for leaded surface−mount packages. 6. Do not exceed power dissipation (PD) under any circumstances. Table 3. RECOMMENDED OPERATING CONDITIONS Symbol VBS VS Min. Max. Unit High−Side Floating Supply Voltage Characteristics VS+10 VS+20 V High−Side Floating Supply Offset Voltage (DC) 6−VDD 600 V VS VB V High−Side Floating Supply Offset Voltage (Transient) −15 (~170) −7 (~400) VHO High−Side Output Voltage VIN Logic Input Voltage GND VDD V VDD Supply Voltage 10 20 V Minimum Input Pulse Width (Note 7) 80 − ns TPULSE Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 3 FAN7171−F085 7. Input pulses shorter than the minimum recommendation can cause abnormal output. Short input pulses can be turn on pulses (i.e., rising edge to the adjacent falling edge), turn off pulses (i.e., falling edge to the adjacent rising edge) but also parasitic pulses induced by noise. Refer to Figure 24 and Figure 25. Value guaranteed by design. Table 4. ELECTRICAL CHARACTERISTICS (VBIAS (VDD, VBS) = 15 V, −40°C ≤ TA ≤ 125°C, unless otherwise specified. The VIN and IIN parameters are referenced to GND. The VO and IO parameters are relative to VS and are applicable to the respective output HO) Parameter Symbol Conditions Min. Typ. Max. Unit POWER SUPPLY SECTION IQDD Quiescent VDD Supply Current VIN = 0 V or 5 V 25 70 μA IPDD Operating VDD Supply Current fIN = 20 kHz, No Load 35 100 μA BOOTSTRAPPED SUPPLY SECTION VBSUV+ VBS Supply Under−Voltage Positive-Going Threshold Voltage VBS = Sweep 8.2 9.2 10.2 V VBSUV− VBS Supply Under−Voltage Negative−Going Threshold Voltage VBS = Sweep 7.5 8.5 9.5 V VBSHYS VBS Supply UVLO Hysteresis Voltage VBS = Sweep ILK Offset Supply Leakage Current VB = VS = 600 V IQBS Quiescent VBS Supply Current VIN = 0 V or 5 V IPBS Operating VBS Supply Current CLOAD = 1 nF, fIN = 20 kHz, RMS Value 0.6 V 50 μA 60 120 μA 0.73 2.80 mA SHUNT REGULATOR SECTION VSHUNT VDD and VBS Shunt Regulator Clamping Voltage ISHUNT = 5 mA 23 25 V INPUT LOGIC SECTION (IN) VIH Logic “1” Input Voltage 2.5 VIL Logic “0” Input Voltage IIN+ Logic Input High Bias Current VIN = 5 V IIN− Logic Input Low Bias Current VIN = 0 V RIN Input Pull−down Resistance V 45 40 0.8 V 125 μA 2 μA 110 kΩ GATE DRIVER OUTPUT SECTION (HO) VOH High Level Output Voltage (VBIAS − VO) No Load 1.5 V VOL Low Level Output Voltage No Load 35 mV IO+ Output High, Short−Circuit Pulsed Current (Note 8) VHO = 0 V, VIN = 5 V, PW ≤ 10 μs 3.0 4.0 A IO− Output Low, Short−Circuit Pulsed Current (Note 8) VHO = 15 V, VIN = 0 V, PW ≤ 10 μs 3.0 4.0 A VS Allowable Negative VS Pin Voltage for IN Signal Propagation to HO −9.8 −7.0 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 8. These parameters guaranteed by design. Table 5. DYNAMIC ELECTRICAL CHARACTERISTICS (VBIAS (VDD, VBS) = 15 V, VS = GND = 0 V, CL =1000 pF, and −40°C ≤ TA ≤ 125°C, unless otherwise specified) Symbol Parameter Conditions Min. Typ. Max. Unit tON Turn−On Propagation Delay VS = 0 V 150 210 ns tOFF Turn−Off Propagation Delay VS = 0 V 150 210 ns www.onsemi.com 4 FAN7171−F085 Table 5. DYNAMIC ELECTRICAL CHARACTERISTICS (continued) (VBIAS (VDD, VBS) = 15 V, VS = GND = 0 V, CL =1000 pF, and −40°C ≤ TA ≤ 125°C, unless otherwise specified) Symbol Parameter Conditions Min. Typ. Max. Unit tR Turn−On Rise Time 25 50 ns tF Turn−Off Fall Time 15 45 ns www.onsemi.com 5 FAN7171−F085 TYPICAL PERFORMANCE CHARACTERISTICS Figure 4. Turn−On Propagation Delay vs. Temperature Figure 5. Turn−Off Propagation Delay vs. Temperature Figure 7. Turn−On Rise Time vs. Temperature Figure 6. Turn−Off Fall Time vs. Temperature Figure 8. Operating VBS Supply Current vs. Temperature Figure 9. Operating VDD Supply Current vs. Temperature www.onsemi.com 6 FAN7171−F085 TYPICAL PERFORMANCE CHARACTERISTICS (continued) Figure 10. VBS UVLO+ vs. Temperature Figure 11. VBS UVLO− vs. Temperature Figure 13. Logic High Input Voltage vs. Temperature Figure 12. Logic Low Input Voltage vs. Temperature Figure 15. Input Pull−Down Resistance vs. Temperature Figure 14. High−Level output Voltage vs. Temperature www.onsemi.com 7 FAN7171−F085 TYPICAL PERFORMANCE CHARACTERISTICS (continued) Figure 16. Output High, Short−Circuit Pulsed Current vs. Temperature Figure 17. Output Low, Short−Circuit Pulsed Current vs. Temperature Figure 19. Output High, Short−Circuit Pulsed Current vs. Supply Voltage Figure 18. Output Low, Short−Circuit Pulsed Current vs. Supply Voltage Figure 20. Quiescent VBS Supply Current vs. Supply Voltage Figure 21. Quiescent VDD Supply Current vs. Supply Voltage www.onsemi.com 8 FAN7171−F085 SWITCHING TIME DEFINITIONS 15 V 10 nF 10 mF 1 GND VDD VB 10 mF 8 4 6 0.1 mF 15 V VS FAN7171_F085 1000 pF IN 2 7 HO Figure 22. Switching Time Test Circuit ( Referenced 8−SOIC) 50% 50% IN ton tr toff 90% HO − VS tf 90% 10% 10% Figure 23. Switching Time Waveform Definitions Pulse width > 80 ns Pulse width < 80 ns IN HO Abnormal Output Figure 24. Output Waveform with Short Turn On Input Pulse Width IN Pulse width > 80 ns Pulse width < 80 ns HO Abnormal Output Figure 25. Output Waveform with Short Turn Off Input Pulse Width www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC8 CASE 751EB ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13735G SOIC8 DATE 24 AUG 2017 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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