FAN73611MX

DATA SHEET www.onsemi.cn 通道高栅极驱 IC FAN73611 SOIC8 (8−SOP) CASE 751EG 说明 FAN73611 IC，  +600 V MOSFET IGBT。onsemi   dv/dt 。   ，  VBS = 15 V VS = −9.8 V ()。VDD VBS ! " ，UVLO #$%&'。(  ) */+ * !"250 mA/500 mA，,-.#/01 (PDP) %2、 34'5( )%2。 MARKING DIAGRAM 73611 ALYW 特 •)678*9 +600 V :+ •)250 mA/500 mA ) */ + *, •)dv/dt   •)3.3 -.V  5 V (0;< •)(1(0234= •)VDD  VBS >? •)8− @A567B (SOP) • This is a Pb−Free Device 73611 A L YW = Device Code = Assembly Site = Wafer Lot Number = Assembly Start Week ORDERING INFORMATION See detailed ordering and shipping information on page 11 of this data sheet. 用 •) #C* •)5( )SMPS 相资源 •)AN−6076– IC :+  DE1%2!8 •)AN−9052 – :+9:FG DE!8 •)AN−8102 – H;HVIC %2< IJ=>?KL @ M © Semiconductor Components Industries, LLC, 2010 June, 2022 − Rev. 2 1 Publication Order Number: FAN73611CN/D FAN73611  用电路 VIN 15 V RBOOT DBOOT FAN73611 PWM C1 1 V DD VB 8 2 IN HO 7 3 NC VS 6 4 GND NC 5 R1 CBOOT L1 R2 C2 D1 VOUT 1. 降直流—直流转 用 VDD 1 UVLO IN 2 GND 4 100K PULSE GENERATOR UVLO NOISE CANCELLER Pin 3 and 5 are no connection. 2. 能框 www.onsemi.cn 2 R R S Q Shoot−through current compensated driver 部框 8 VB 7 HO 6 VS FAN73611 脚配置 VDD 1 8 VB IN 2 7 HO NC 3 6 VS GND 4 5 NC FAN73611 3. 脚配置 (视 ) 脚 脚 称 述 1 VDD 2 IN   3 NC   4 GND 5 NC   6 VS  7 HO  8 VB    www.onsemi.cn 3 FAN73611 绝最额 ( ，TA = 25°C。) 符 最 最  VS  VB − 25 VB + 0.3 V VB  −0.3 625.0 V VHO  VS − 0.3 VB + 0.3 V VDD   −0.3 25.0 V VIN  −0.3 VCC + 0.3 V dVS/dt    − ±50 V/ns PD  (注 1, 2, 3) − 0.625 W qJA  − 200 °C/W TJ  −55 +150 °C −55 +150 °C TSTG ! " Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. (#$%) &'()*+,-. /，012。&'()34，5670，08912，:! ;" 76.2 x 114.3 x 1.6 mm PCB ?# (FR-4 @ABCDE)。 2. F$G%： JESD51-2: IJKLMN6@OP—QRST JESD51-3: &U.VW>X> Y8Z[LM?。 3. \'$，](^() PD。 荐!"额 符 最 最  VB   VS + 10 VS + 20 V VS  6 − VDD 600 V VHO  VS VB V VIN  GND VDD V VDD  10 20 V TA _)@O −40 +125 °C " Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. (#$%) *`ab)/.cde，(70fghij。kel+`ab)/.cm-/,n $ij，0:! ;