Is Now Part of
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FAN7371
大电流高侧栅极驱动 IC
特性
说明
浮动通道可实现高达 +600V 的自举运行
FAN7371 是单片高侧栅极驱动器 IC，可以驱动工作电压
最高达 +600V 的高速 MOSFET 和 IGBT。它具有缓冲输
出级，且所有 NMOS 晶体管设计为具有高脉冲电流驱动
能力和最低交叠导通。
4 A/4 A 源电流 / 灌电流驱动能力
共模 dv/dt 噪声消除电路
兼容 3.3V 和 5V 逻辑输入电平
输出信号与输入信号同相位
VBS 欠压锁定
VDD 和 VBS 上有 25 V 的 电压调节器
8- 引脚小尺寸封装 (SOP)
飞兆的高压流程和共模噪声消除技术可使高端驱动器在高
dv/dt 噪声环境下稳定运行。先进的电平转换电路允许高
侧栅极驱动器的偏置电压达到 VS= -9.8 V （VBS= 15 V
时的典型值）。
UVLO 电路可防止 VBS 低于指定的阈值电压时发生故障。
大电流和低输出压降功能使得此器件适合作为等离子显示
面板应用中的维持开关驱动器和能量恢复电路驱动器、电
机驱动变频器、开关电源和大功率 DC-DC 转换器应用。
应用
高速栅极驱动器
PDP 应用中的维持放电开关驱动器
8-SOP
PDP 应用中的能量恢复电路开关驱动器
高功率降压转换器
电机驱动变频器
订购信息
器件编号
FAN7371M(1)
FAN7371MX(1)
封装
工作
温度范围
8-SOP
-40°C ~ 125°C
Eco 标志
RoHS
包装方法
塑料管
卷带和卷盘
注：
1. 这些器件通过了 JESD22A-111 波峰焊测试。
对于飞兆公司的生态标志定义，请访问：http://www.fairchildsemi.com/company/green/rohs_green.html。
© 2008 飞兆半导体公司
FAN7371 Rev. 1.0.2
www.fairchildsemi.com
FAN7371 — 大电流高侧栅极驱动 IC
2013 年 11 月
15V
DBOOT3
VS
15V
FAN7371
RBOOT1
DBOOT1
8 VB
Q3
1
VDD
2
IN
4 GND
VB
8
HO
7
VS
6
NC
5
NC 3
5
NC
2
IN3
8
IN
HO
7
3 NC
VS
6
NC
5
GND 4
D4
To Pannel
R2
Q1
VB
2
IN
VS
R1
FAN7371
8 VB
Q2
R5
IN2
HO
6
D2
D1
FAN7371
VDD
7
L1
DBOOT2
1
VDD 1
CBOOT3
R4
CBOOT1
3 NC
R3
D3
FAN7371
IN1
RBOOT3
Q4
VDD 1
R7
7
HO
6
VS
5
NC
IN
2
IN4
CBOOT2
C1
R6
NC 3
C3
R8
4 GND
GND 4
C2
Energy Recovery Circuit Part
Sustain Drive Part
FAN7371 Rev.03
图 1. 浮动双向开关和半桥驱动器：PDP 应用
VIN
15V
RBOOT
DBOOT
FAN7371
1 VDD
VB 8
R1
2 IN
PWM
HO
7
CBOOT
C1
3 NC
4 GND
L1
R2
VS 6
NC
5
D1
C2
VOUT
FAN7371 Rev.01
图 2. 降压直流 - 直流转换器应用
© 2008 飞兆半导体公司
FAN7371 Rev.1.0.2
www.fairchildsemi.com
2
FAN7371 — 大电流高侧栅极驱动 IC
应用电路图
1
VDD
25V
GND
UVLO
4
PULSE
GENERATOR
2
IN
110K
R
NOISE
CANCELLER
S
R
Q
Shoot-through current
compensated gate driver
VDD
8
VB
7
HO
6
VS
25V
Pins 3 and 5 are no connection.
FAN7371 Rev.04
图 3. 功能框图
引脚配置
VDD
1
IN
2
8
VB
7
HO
FAN7371
NC
3
6
VS
GND
4
5
NC
FAN7371 Rev.01
图 4. 引脚配置 （俯视图）
引脚定义
引脚号
名称
1
VDD
说明
2
IN
高侧栅极驱动器输出的逻辑输入
3
NC
无连接
4
GND
5
NC
无连接
6
VS
高侧浮动电源电压返回
7
HO
高侧驱动输出
8
VB
高侧浮动电源
电源电压
接地
© 2008 飞兆半导体公司
FAN7371 Rev.1.0.2
www.fairchildsemi.com
3
FAN7371 — 大电流高侧栅极驱动 IC
内部框图
应力超过绝对最大额定值，可能会损坏器件。在超出推荐的工作条件的情况下，该器件可能无法正常工作，所以不建议
让器件在这些条件下长期工作。此外，长期在高于推荐的工作条件下工作，会影响器件的可靠性。绝对最大额定值仅是
应力规格值。除非另有说明， TA= 25°C。
符号
VS
特性
高侧浮动偏置电压
VB
高侧浮动电源电压
VHO
高侧浮动输出电压
VDD
VIN
dVS/dt
单位
VB-VSHUNT
VB+0.3
V
-0.3
625.0
V
VB+0.3
V
低侧和逻辑电源电压 (2)
-0.3
VSHUNT
V
逻辑输入电压
-0.3
VDD+0.3
V
允许的偏置电压变化速率
± 50
V/ns
0.625
W
200
C/W
-55
+150
C
存储温度
-55
+150
C
操作环境温度
-40
+125
C
功耗
JA
热阻
TJ
结温
TA
最大值
VS-0.3
PD
TSTG
(2)
最小值
(3, 4, 5)
注意：
2
3
4
5
该 IC 在 VDD 和 VBS 上包含一个电压调节器，标准击穿电压为 25 V。请注意该电源引脚不能由比电气特性部分指
定的 VSHUNT 高的低阻抗电压源驱动。
安装到 76.2 x 114.3 x 1.6mm PCB 板 (FR-4 环氧玻璃材料 )。
参照下列标准：
JESD51-2：集成电路热测试方法环境条件 – 自然对流；
JESD51-3：含铅表面贴装封装的低有效导热系数测试板。
任何情况下，都不得超过功耗 (PD)。
推荐工作条件
推荐的操作条件表明确了器件的真实工作条件。指定推荐的工作条件，以确保器件的最佳性能达到数据表中的规格。
飞兆不建议超出额定或依照绝对最大额定值进行设计。
符号
参数
最小值
最大值
单位
VBS
高侧浮动电源电压
VS+10
VS+20
V
VS
高侧浮动电源偏置电压
6-VDD
600
V
VHO
高侧输出电压
VS
VB
V
VIN
逻辑输入电压
GND
VDD
V
VDD
电源电压
10
20
V
© 2008 飞兆半导体公司
FAN7371 Rev.1.0.2
www.fairchildsemi.com
4
FAN7371 — 大电流高侧栅极驱动 IC
绝对最大额定值
除非另有说明， VBIAS(VDD、 VBS)=15.0V、 TA = 25°C。 VIN 和 IIN 参数以 GND 作为基准。 VO 和 IO 参数以 VS 为参考
点，适用于对应的输出 HO。
符号
特性
电源部分
IQDD VDD 静态电源电流
IPDD
VDD 工作电源电流
测试条件
最小值 典型值 最大值 单位
VIN= 0 V 或 5 V
25
70
A
fIN= 20 KHz，空载
35
100
A
自举电源部分
VBSUV+ VBS 电源欠压正向阈值
VBS= 扫描
8.2
9.2
10.2
V
VBSUV- VBS 电源欠压负向阈值
VBS= 扫描
7.5
8.5
9.5
V
VBSHYS VBS 电源欠压锁定滞回电压回差
VBS= 扫描
0.7
偏置漏电流
VB=VS=600V
IQBS
VBS 静态电源电流
VIN= 0 V 或 5 V
IPBS
VBS 工作电源电流
CLOAD= 1 nF， fIN= 20 KHz，
rms 值
ILK
电压调节器部分
VSHUNT VDD 和 VBS 电压调节器钳位电压
ISHUNT=5mA
输入逻辑部分
VIH
逻辑 “1” 输入电压
VIL
逻辑 “0” 输入电压
24
V
10
A
60
120
A
1.0
2.8
mA
25
V
2.5
IIN+
逻辑输入高电平偏置电流
VIN=5V
IIN-
逻辑输入低电平偏置电流
VIN=0V
RIN
输入下拉电阻
45
70
栅极驱动器输出部分
VOH
高电平输出电压 (VBIAS - VO)
V
0.8
V
70
A
2
A
110
K
无负载
1.2
V
mV
输出高电平短路脉冲电流 (6)
无负载
VHO=0V, VIN=5V, PW 10µs
30
3.0
4.0
A
IO-
输出低电平短路脉冲电流 (6)
VHO=15V,VIN=0V, PW 10µs
3.0
4.0
A
VS
IN 信号传播到 HO 时允许的 VS 引脚负
电压
VOL
低电平输出电压
IO+
-9.8
-7.0
V
注：
6
这些参数由设计保证。
动态电气特性
除非另有说明， VDD=VBS=15V、 GND=0V、 CLOAD=1000pF、 TA=25°C。
符号
参数
工作条件
最小值 典型值 最大值 单位
ton
导通传播延时时间
VS=0V
150
210
ns
toff
关断传播延时时间
VS=0V
150
210
ns
tr
导通上升时间
25
50
ns
tf
关断下降时间
15
40
ns
.
© 2008 飞兆半导体公司
FAN7371 Rev.1.0.2
www.fairchildsemi.com
5
FAN7371 — 大电流高侧栅极驱动 IC
电气特性
250
200
200
tOFF [ns]
tON [ns]
250
150
150
100
100
50
50
0
-40
-20
0
20
40
60
80
100
0
-40
120
-20
0
Temperature [°C]
50
50
40
40
30
20
10
10
0
20
40
60
80
100
0
-40
120
-20
0
Temperature [°C]
80
100
120
20
40
60
80
100
120
Temperature [°C]
图 7. 导通上升时间与温度的关系
图 8. 关断下降时间与温度的关系
2.0
100
80
1.5
IPBS [mA]
IPDD [A]
60
30
20
-20
40
图 6. 关断传播延时与温度的关系
tF [ns]
tR [ns]
图 5. 导通传播延时与温度的关系
0
-40
20
Temperature [°C]
60
1.0
40
0.5
20
0
-40
-20
0
20
40
60
80
100
0.0
-40
120
Temperature [°C]
0
20
40
60
80
100
120
Temperature [°C]
图 9. 工作时 VDD 电源电流与温度的关系
图 10. VBS 工作电源电流与温度的关系
© 2008 飞兆半导体公司
FAN7371 Rev. 1.0.2
-20
www.fairchildsemi.com
6
FAN7371 — 大电流高侧栅极驱动 IC
典型特性
9.5
9.5
9.0
VBSUV- [V]
VBSUV+ [V]
10.0
9.0
8.5
8.0
8.5
8.0
-40
-20
0
20
40
60
80
100
7.5
-40
120
-20
0
Temperature [°C]
3.0
3.0
2.5
2.5
2.0
2.0
1.5
1.0
0.5
0.5
0
20
40
60
60
80
100
120
1.5
1.0
-20
40
图 12. VBS UVLO- 与温度的关系
VIL [V]
VIH [V]
图 11. VBS UVLO+ 与温度的关系
0.0
-40
20
Temperature [°C]
80
100
0.0
-40
120
-20
0
Temperature [°C]
20
40
60
80
100
120
Temperature [°C]
图 13. 逻辑高电平输入电压与温度的关系
图 14. 逻辑低电平输入电压与温度的关系
280
1.50
240
1.25
VOH [V]
RIN [k]
200
160
120
1.00
0.75
80
0.50
40
0.25
0
-40
-20
0
20
40
60
80
100
0.00
-40
120
Temperature [°C]
0
20
40
60
80
100
120
Temperature [°C]
图 15. 输入下拉电阻与温度的关系
图 16. 高电平输出电压与温度的关系
© 2008 飞兆半导体公司
FAN7371 Rev. 1.0.2
-20
www.fairchildsemi.com
7
FAN7371 — 大电流高侧栅极驱动 IC
典型特性 （续）
6.5
6.0
6.0
5.5
5.5
5.0
5.0
IO- [A]
IO+ [A]
6.5
4.5
4.5
4.0
4.0
3.5
3.5
3.0
3.0
2.5
-40
-20
0
20
40
60
80
100
2.5
-40
120
-20
0
Temperature [°C]
7
7
6
6
5
5
4
4
3
3
12
14
16
40
60
80
100
120
图 18. 输出低电平短路脉冲电流与温度的关系
IO- [A]
IO+ [A]
图 17. 输出高电平短路脉冲电流与温度的关系
2
10
20
Temperature [°C]
18
2
10
20
12
14
VBS [V]
16
18
20
VBS [V]
图 19. 输出高电平短路脉冲电流与电源电压的关系
图 20. 输出低电平短路脉冲电流与电源电压的关系
80
120
100
-40°C
80
-40°C
IQBS [A]
IQDD [A]
60
40
25°C
25°C
60
125°C
40
125°C
20
20
0
10
12
14
16
18
0
10
20
Supply Voltage [V]
14
16
18
20
Supply Voltage [V]
图 21. VDD 静态电源电流与电源电压的关系
图 22. VBS 静态电源电流与电源电压的关系
© 2008 飞兆半导体公司
FAN7371 Rev. 1.0.2
12
www.fairchildsemi.com
8
FAN7371 — 大电流高侧栅极驱动 IC
典型特性 （续）
时序图
15V
50%
VDD
10nF
VB
10µF
10µF
0.1µF
50%
IN
15V
VS
GND
ton
tr
toff
tf
FAN7371
1000pF
90%
90%
HO
IN
OUT
(A)
10%
10%
(B)
图 23. 开关时间测试电路和波形定义
© 2008 飞兆半导体公司
FAN7371 Rev.1.0.2
www.fairchildsemi.com
9
FAN7371 — 大电流高侧栅极驱动 IC
开关时间定义
5.00
4.80
A
0.65
3.81
8
5
6.20
5.80
PIN ONE
INDICATOR
B
1.75
4.00
3.80
1
5.60
4
1.27
(0.33)
0.25
M
1.27
C B A
LAND PATTERN RECOMMENDATION
0.25
0.10
SEE DETAIL A
1.75 MAX
R0.10
0.10
0.51
0.33
0.50 x 45°
0.25
C
OPTION A - BEVEL EDGE
GAGE PLANE
R0.10
8°
0°
0.90
0.406
0.25
0.19
C
0.36
OPTION B - NO BEVEL EDGE
NOTES: UNLESS OTHERWISE SPECIFIED
SEATING PLANE
(1.04)
DETAIL A
SCALE: 2:1
A) THIS PACKAGE CONFORMS TO JEDEC
MS-012, VARIATION AA, ISSUE C,
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE MOLD
FLASH OR BURRS.
D) LANDPATTERN STANDARD: SOIC127P600X175-8M.
E) DRAWING FILENAME: M08AREV13
图 24. 8- 引脚小尺寸封装 (SOP)
封装图纸是作为一项服务而提供给考虑选用飞兆半导体产品的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版
本和 / 或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不超出飞兆公司全球范围内的条款与条件，尤其指保修，保修
涵盖飞兆半导体的全部产品。
随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：
http://www.fairchildsemi.com/packaging/.
© 2008 飞兆半导体公司
FAN7371 Rev.1.0.2
www.fairchildsemi.com
10
FAN7371 — 大电流高侧栅极驱动 IC
物理尺寸
FAN7371 — 大电流高侧栅极驱动 IC
© 2008 飞兆半导体公司
FAN7371 Rev. 1.0.2
www.fairchildsemi.com
11
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