FAN7382M1

DATA SHEET www.onsemi.com High-Side and Low-Side Gate Driver SOIC8 CASE 751EG FAN7382 The FAN7382, a monolithic high and low side gate−drive IC, can drive MOSFETs and IGBTs that operate up to +600 V. onsemi’s high−voltage process and commonmode noise canceling technique provides stable operation of the high−side driver under high−dv/dt noise circumstances. An advanced level−shift circuit allows high−side gate driver operation up to VS = −9.8 V (typical) for VBS = 15 V. The input logic level is compatible with standard TTL−series logic gates. UVLO circuits for both channels prevent malfunction when VCC or VBS is lower than the specified threshold voltage. Output drivers typically source/sink 350 mA/650 mA, respectively, which is suitable for fluorescent lamp ballasts, PDP scan drivers, motor controls, etc. SOIC14 N CASE 751ER MARKING DIAGRAMS SOIC8 7382 ALYW Features • Floating Channels Designed for Bootstrap Operation to +600 V • Typically 350 mA/650 mA Sourcing/Sinking Current Driving Capability for Both Channels • Common−Mode dv/dt Noise Canceling Circuit • Extended Allowable Negative VS Swing to −9.8 V for Signal • • • • • • Propagation at VCC = VBS = 15 V VCC & VBS Supply Range from 10 V to 20 V UVLO Functions for Both Channels TTL Compatible Input Logic Threshold Levels Matched Propagation Delay Below 50 ns Output In−phase with Input Signal These are Pb−Free Devices 7382 A L YW = Device Code = Assembly Site = Wafer Lot Number = Assembly Start Week SOIC14 N 7382M1 &E&Z&3&K 7382M1 &E &Z &3 &K = Device Code = Designates Space = Assembly Location = 3−Digit Date Code = 2−Digits Lot Run Traceability Code ORDERING INFORMATION See detailed ordering and shipping information on page 12 of this data sheet. © Semiconductor Components Industries, LLC, 2005 February, 2022 − Rev. 2 1 Publication Order Number: FAN7382/D FAN7382 Typical Application Circuit 600 V 15 V RBOOT DBOOT 1 V CC VB 8 HIN 2 HIN HO 7 LIN 3 LIN VS 6 4 COM LO 5 Q1 R1 R2 CBOOT C1 Q2 R3 Load R4 Figure 1. Application Circuit for Half−Bridge Internal Block Diagram 2 HS(ON/OFF) 500 K PULSE GENERATOR HIN RR S Q DRIVER UVLO UVLO DELAY 3 DRIVER LS(ON/OFF) LIN 8 VB 7 HO 6 VS 1 VCC 5 LO 4 COM 500 K Figure 2. Functional Block Diagram www.onsemi.com 2 FAN7382 Pin Assignments FAN7382MX FAN7382M1X VCC 1 8 VB VCC 1 14 NC HIN 2 7 HO HIN 2 13 VB LIN 3 6 VS LIN 3 12 HO COM 4 5 LO NC 4 11 VS NC 5 10 NC COM 6 9 NC LO 7 8 NC Figure 3. Pin Configuration (Top View) PIN DIFINITIONS Name Description VCC Low−Side Supply Voltage HIN Logic Input for High−Side Gate Driver Output LIN Logic Input for Low−Side Gate Driver Output COM Logic Ground and Low−Side Driver Return LO Low−Side Driver Output VS High−Voltage Floating Supply Return HO High−Side Driver Output VB High−Side Floating Supply www.onsemi.com 3 FAN7382 ABSOLUTE MAXIMUM RATINGS Symbol Min Max Unit High−Side Offset Voltage Parameter VS VB − 25 VB + 0.3 V High−Side Floating Supply Voltage VB −0.3 625 High−Side Floating Output Voltage HO VHO VS − 0.3 VB + 0.3 Low−Side and Logic Fixed Supply Voltage VCC −0.3 25 Low−Side Output Voltage LO VLO −0.3 VCC + 0.3 Logic Input Voltage (HIN, LIN) VIN −0.3 VCC + 0.3 Logic Ground COM VCC − 25 VCC + 0.3 Allowable Offset Voltage Slew Rate dVS/dt Power Dissipation PD (Notes 1, 2, 3) 50 V/ns SOIC8 0.625 W SOIC14 N 1.0 Junction temperature TJ 150 °C Storage Temperature TSTG 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Mounted on 76.2 x 114.3 x 1.6 mm PCB (FR−4 glass epoxy material). 2. Refer to the following standards: JESD51−2: Integral circuits thermal test method environmental conditions − natural convection JESD51−3: Low effective thermal conductivity test board for leaded surface mount packages 3. Do not exceed PD under any circumstances. THERMAL CHARACTERISTICS Parameter Symbol Min Max Unit qJA SOIC8 200 °C/W SOIC14 N 110 Symbol Min Max Unit High−Side Floating Supply Voltage VB VS + 10 VS + 20 V High−Side Floating Supply Offset Voltage VS 6 − VCC 600 V High−Side (HO) Output Voltage VHO VS VB V Low−Side (LO) Output Voltage VLO COM VCC V Logic Input Voltage (HIN, LIN) VIN COM VCC V Low−Side Supply Voltage VCC 10 20 V TA −40 125 °C Thermal Resistance, Junction−to−Ambient RECOMMENDED OPERATING CONDITIONS Parameter Ambient Temperature Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 4 FAN7382 ELECTRICAL CHARACTERISTICS VBIAS (VCC, VBS) = 15.0 V, TA = 25°C, unless otherwise specified. The VIN and IIN parameters are referenced to COM. The VO and IO parameters are referenced to VS and COM and are applicable to the respective outputs HO and LO. Symbol Min Typ Max Unit VCC and VBS Supply Under−Voltage Positive Going Threshold Test Condition VCCUV+ VBSUV+ 8.2 9.2 10.0 V VCC and VBS Supply Under−Voltage Positive Going Threshold VCCUV− VBSUV− 7.6 8.7 9.6 V VCC Supply Under−Voltage Lockout Hysteresis VCCUVH VBSUVH Parameter Offset Supply Leakage Current VB = VS = 600 V ILK Quiescent VBS Supply Current VIN = 0 V or 5 V IQBS Quiescent VCC Supply Current VIN = 0 V or 5 V IQCC Operating VBS Supply Current fIN = 20 kHz, rms value Operating VCC Supply Current fIN = 20 kHz, rms value 0.6 V 50 mA 45 120 mA 70 180 mA IPBS 600 mA IPCC 600 mA Logic “1” Input Voltage VIH Logic “0” input voltage VIL 0.8 V VOH 1.0 V VOL 0.6 V mA High−Level Output Voltage, VBIAS − VO IO = 20 mA Low−Level Output Voltage, VO 2.9 V Logic “1” Input Bias Current VIN = 5 V IIN+ 10 20 Logic “0” Input Bias Current VIN = 0 V IIN− 1.0 2.0 Output High Short−Circuit Pulsed Current VO = 0 V, VIN = 5 V with PW < 10 ms IO+ 250 350 mA Output Low Short−Circuit Pulsed Current VO = 15 V, VIN = 0 V with PW < 10 ms IO− 500 650 mA Allowable Negative VS Pin Voltage for HIN Signal Propagation to HO VS −9.8 −7.0 mA V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. DYNAMIC ELECTRICAL CHARACTERISTICS VBIAS (VCC, VBS) = 15.0 V, VS = COM, CL = 1000 pF and, TA = 25°C, unless otherwise specified. Parameter Test Condition Symbol Min Typ Max Unit Turn−On Propagation Delay VS = 0 V ton 100 170 300 ns Turn−Off Propagation Delay VS = 0 V or 600 V (Note 4) toff 100 200 300 ns Turn−On Rise Time tr 20 60 140 ns Turn−Off Fall Time tf 30 80 ns 50 ns Delay Matching, HS & LS Turn−On/Off MT 4. This parameter guaranteed by design. www.onsemi.com 5 FAN7382 300 300 VCC = VBS COM = 0 V CL = 1 nF TA = 25°C 250 Turn−On Propagation Delay (ns) Turn−On Propagation Delay (ns) TYPICAL CHARACTERISTICS High−Side 200 150 Low−Side 100 10 12 14 16 18 275 250 225 High−Side 200 175 Low−Side 150 125 100 75 50 20 VCC = VBS = 15 V COM = 0 V CL = 1 nF −40 −20 0 Supply Voltage (V) 60 80 100 120 Figure 5. Turn−On Propagation Delay vs. Temperature 300 300 VCC = VBS COM = 0 V CL = 1 nF TA = 25°C 280 260 240 Turn−Off Propagation Delay (ns) Turn−Off Propagation Delay (ns) 40 Temperature (°C) Figure 4. Turn−On Propagation Delay vs. Supply Voltage High−Side 220 200 Low−Side 180 160 140 120 100 10 12 14 16 18 Turn−On Rising Time (ns) 56 54 52 Low−Side 50 48 High−Side 46 44 42 10 11 12 13 14 15 16 High−Side 225 200 Low−Side 175 150 0 20 40 60 80 100 120 Figure 7. Turn−Off Propagation Delay vs. Temperature VCC = VBS COM = 0 V CL = 1 nF TA = 25°C 60 58 250 VCC = VBS = 15 V COM = 0 V CL = 1 nF Temperature (°C) Figure 6. Turn−Off Propagation Delay vs. Supply Voltage 64 62 275 125 −40 −20 20 Supply Voltage (V) Turn−On Rising Time (ns) 20 17 18 19 20 80 75 VCC = VBS = 15 V 70 COM = 0 V 65 CL = 1 nF 60 55 50 Low−Side 45 40 35 High−Side 30 25 20 15 10 5 0 −40 −20 0 20 40 60 80 100 120 Temperature (°C) Supply Voltage (V) Figure 9. Turn−On Rising Time vs. Temperature Figure 8. Turn−On Rising Time vs. Supply Voltage www.onsemi.com 6 FAN7382 TYPICAL CHARACTERISTICS (continued) 32 30 28 50 VCC = VBS COM = 0 V CL = 1 nF TA = 25°C High−Side 45 Turn−Off Falling Time (ns) Turn−Off Falling Time (ns) 34 26 24 22 Low−Side 20 18 16 10 11 12 13 14 15 16 17 18 19 40 High−Side 35 30 25 Low−Side 20 15 10 −40 20 VCC = VBS = 15 V COM = 0 V CL = 1 nF −20 0 Supply Voltage (V) 450 Output Sourcing Current (mA) Turn−Off Propagation Delay (ns) 500 400 High−Side 350 300 Low−Side 250 200 150 100 440 400 High−Side 360 340 Low−Side 320 300 280 10 12 14 16 18 −40 −20 20 0 High−Side Low−Side 400 10 12 14 60 80 100 120 850 500 300 40 Figure 13. Output Sourcing Current vs. Temperature VCC = VBS COM = 0 V LO = VCC, HO = VB TA = 25°C 600 20 Temperature (°C) Output Sinking Current (mA) Output Sinking Current (mA) 700 100 120 380 Figure 12. Output Sourcing Current vs. Supply Voltage 800 80 VCC = VBS = 15 V COM = 0 V LO = HO = 0 V 420 Supply Voltage (V) 900 60 Temperature (°C) VCC = VBS COM = 0 V LO = HO = 0 V TA = 25°C 550 40 Figure 11. Turn−Off Falling Tim vs. Temperature Figure 10. Turn−Off Falling Time vs. Supply Voltage 600 20 16 18 750 700 High−Side 650 Low−Side 600 550 500 20 VCC = VBS = 15 V COM = 0 V LO = VCC, HO = VB 800 −40 −20 0 20 40 60 80 100 Temperature (°C) Supply Voltage (V) Figure 15. Output Sinking Current vs. Temperature Figure 14. Output Sinking Current vs. Supply Voltage www.onsemi.com 7 120 FAN7382 −4 Allowable Negative VS Voltage for Signal Propagation to High−Side (V) Allowable Negative VS Voltage for Signal Propagation to High−Side (V) TYPICAL CHARACTERISTICS (continued) VCC = VBS COM = 0 V TA = 25°C −6 −8 −10 −12 −14 −16 −18 10 12 16 14 18 20 −9.0 VCC = VBS = 15 V COM = 0 V −9.2 −9.4 −9.6 −9.8 −10.0 −10.2 −10.4 −40 −20 0 Supply Voltage (V) 85 80 70 65 60 20 55 5 10 15 50 45 −40 −20 20 0 48 40 30 100 120 46 44 42 40 20 38 10 0 80 VCC = 15 V COM = 0 HIN = LIN = 0 V 50 IQBS (mA) IQBS (mA) 50 60 52 VCC = 15 V COM = 0 V HIN = LIN = 0 V TA = 25°C 60 40 Figure 19. IQCC vs. Temperature Figure 18. IQCC vs. Supply Voltage 70 20 Temperature (°C) Supply Voltage (V) 80 100 120 75 40 0 80 VCC = VBS = 15 V COM = 0 V HIN = LIN = 0 V 90 IQCC (mA) IQCC (mA) 95 60 0 60 Figure 17. Allowable Negative VS Voltage for Signal Propagation to High Side vs. Temperature VBS = 15 V COM = 0 V HIN = LIN = 0 V TA = 25°C 80 40 Temperature (°C) Figure 16. Allowable Negative VS Voltage for Signal Propagation to High Side vs. Supply Voltage 100 20 36 0 5 10 15 20 −40 −20 0 20 40 60 80 100 120 Temperature (°C) Supply Voltage (V) Figure 21. IQBS vs. Temperature Figure 20. IQBS vs. Supply Voltage www.onsemi.com 8 FAN7382 TYPICAL CHARACTERISTICS (continued) VOH (V) 0.6 0.5 High−Side 0.60 VCC = VBS COM = 0 V HIN = LIN = 5 V IL = 20 mA TA = 25°C 0.55 0.50 VOH (V) 0.7 0.4 Low−Side 0.45 Low−Side 0.40 High−Side 0.35 0.3 0.2 VCC = VBS = 15 V COM = 0 V HIN = LIN = 5 V IL = 20 mA 0.30 10 12 16 14 18 0.25 −40 20 −20 0 0.16 0.15 0.20 VOL (V) VOL (V) 0.22 VCC = VBS COM = 0 V HIN = LIN = 0 V IL = 20 mA TA = 25°C 0.17 High−Side 0.14 0.12 0.18 0.16 100 120 Low−Side 0.12 Low−Side 0.10 10 12 14 16 18 −40 −20 20 0 40 30 60 80 100 120 Figure 25. Low−Level Output Voltage vs. Temperature HIN = LIN = 5 V 14 12 IN+ IN+ (mA) 25 40 16 VCC = VBS COM = 0 V IN = VCC or IN = 0 V TA = 25°C 35 20 Temperature (°C) Figure 24. Low−Level Output Voltage vs. Supply Voltage IN+/IN− (mA) 80 High−Side Supply Voltage (V) 20 15 LIN 10 HIN 8 10 6 5 0 60 VCC = VBS = 15 V COM = 0 V HIN = LIN = 0 V IL = 20 mA 0.14 0.13 40 Figure 23. High−Level Output Voltage vs. Temperature Figure 22. High−Level Output Voltage vs. Supply Voltage 0.18 20 Temperature (°C) Supply Voltage (V) IN− 0 5 10 4 15 −40 −20 20 Supply Voltage (V) 0 20 40 60 80 100 120 Temperature (°C) Figure 27. Input Bias Current vs. Temperature Figure 26. Input Bias Current vs. Supply Voltage www.onsemi.com 9 FAN7382 10.0 10.0 9.8 9.6 9.8 9.6 VSBUV+/VSBUV− (V) VCCUV+/VCCUV− (V) TYPICAL CHARACTERISTICS (continued) VCCUV+ 9.4 9.2 9.0 VCCUV− 8.8 8.6 8.4 8.2 8.0 −40 −20 0 20 40 60 80 100 120 Input Logic Threshold Voltage (V) VB−to−COM = 650 V ILK (mA) 4 3 2 1 40 60 8.4 −20 0 20 40 60 80 100 120 Figure 29. VBS UVLO Threshold Voltage vs. Temperature 5 20 VSBUV− 8.8 8.6 Temperature (°C) Figure 28. VCC UVLO Threshold Voltage vs. Temperature 0 9.0 8.2 8.0 −40 Temperature (°C) 0 −40 −20 VSBUV+ 9.4 9.2 80 100 120 3.4 3.2 3.0 VIH (LIN) 2.8 2.6 2.4 VIH (HIN) 2.2 2.0 VIL (LIN) 1.8 1.6 1.4 1.2 VIL (HIN) 1.0 0.8 0.6 0.4 0.2 0.0 −40 −20 0 20 VCC = VBS = 15 V COM = 0 V 40 60 80 100 120 Temperature (°C) Temperature (°C) Figure 31. Input Logic Threshold Voltage vs. Temperature Figure 30. VB to COM Leakage Current vs. Temperature www.onsemi.com 10 FAN7382 TYPICAL CHARACTERISTICS (continued) 15 V 15 V 1 VCC VB 8 4 COM VS 6 HIN 2 HIN HO 7 LIN 3 LIN LO 5 100 nF 10 mF 10 mF HIN LIN 100 nF 1 nF HO LO 1 nF Figure 33. Input / Output Timing Diagram Figure 32. Switching Time Test Circuit HIN LIN ton: 50% toff: tr: tf: ton Turn−on Delay Time Turn−off Delay Time Turn−on Rise Time Turn−off Fall Time LIN toff tr HIN 50% tf LO 10% 90% 90% LO 10% MT 10% toff−H toff−L ton−H ton−L HO MT HO 90% LO HO Figure 35. Delay Matching Waveform Definition Figure 34. Switching Time Waveform Definition www.onsemi.com 11 FAN7382 ORDERING INFORMATION Part Number FAN7382MX (Note 5) Operating Temperature Range Package Shipping† −40°C ~125°C SOIC8 (Pb−Free) 3000 / Tape & Reel SOIC14 N (Pb−Free) 3000 / Tape & Reel FAN7382M1X (Note 5) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 5. These devices passed wave soldering test by JESD22A−111. www.onsemi.com 12 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC8 CASE 751EG ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13741G SOIC8 DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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