FAN73833MX

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FAN73833 半桥栅极驱动 IC 特性 说明  浮动通道可实现高达 +600V 的自举运行 FAN73833 是半桥栅极驱动 IC，用于驱动 MOSFET 和 IGBT，工作电压高达 +600V。  两个通道的 350 mA/650 mA 的典型源电流 / 灌电流驱动        能力 将容许负 VS 摆幅扩展至 -9.8V，在当 VDD=VBS=15V 时 的信号传播时 兼容 3.3V 和 5V 逻辑输入电平 输出与输入信号同相 两个通道均内置欠压闭锁 (UVLO) 功能 内置直通预防电路 内置共模 dv/dt 噪声消除电路 内部死区时间典型值 400 ns 飞兆的高压流程和共模噪声消除技术可使高端驱动器在高 dv/dt 噪声环境下稳定运行。 先进的电平转换电路使高侧栅极驱动器在 VBS=15 V 时可 耐受高达 VS=-9.8 V （典型值）时仍然正常工作。 当 VDD 和 VBS 小于指定阈值电压时，两个通道的欠压闭 锁 (UVLO) 电路可防止发生故障。 输出驱动器的源电流 / 灌电流典型值分别为 350mA/ 650mA，适用于各种各样的半桥和全桥逆变器。 8-SOP 应用  SMPS  电机驱动逆变器  萤光灯镇流器  HID 镇流器 订购信息 器件编号 FAN73833M FAN73833MX 封装 工作温度范围 8-SOP -40°C 至 +125°C © 2008 Fairchild Semiconductor Corporation FAN73833 • Rev. 1.0.2 包装方法 塑料管 卷带和卷盘 www.fairchildsemi.com FAN73833 — 半桥栅极驱动 IC 2013 年 11 月 FAN73833 — 半桥栅极驱动 IC 典型应用电路 RBOOT Up to 600V DBOOT VDD LIN 1 LIN VB 8 HIN 2 HIN HO 7 3 VDD VS 6 CBOOT 4 COM Load LO 5 图 1. 半桥应用电路 内部框图 8 VB 7 HO 6 VS 3 VDD 5 LO 4 COM UVLO HIN R S Q HS(ON/OFF) 2 UVLO 100K SHOOT-THROUGH PREVENTION LS(ON/OFF) 1 100K DELAY DEAD-TIME { 400ns } DRIVER LIN R DRIVER PULSE GENERATOR SCHMITT TRIGGER INPUT NOISE CANCELLER 图 2. 功能框图 © 2008 飞兆半导体公司 FAN73833 • Rev.1.0.2 www.fairchildsemi.com 2 FAN73833 — 半桥栅极驱动 IC 引脚布局 1 HIN 2 VDD 3 COM 4 FAN73833 LIN 8 VB 7 HO 6 VS 5 LO 图 3. 引脚布局 （顶视图） 引脚定义 引脚号 名称 说明 1 LIN 低侧驱动器的逻辑输入 2 HIN 高侧驱动器的逻辑输入 3 VDD 低端电源电压 4 COM 逻辑接地和低侧驱动器返回 5 LO 低侧驱动输出 6 VS 高侧浮动电源返回 7 HO 高侧驱动输出 8 VB 高侧浮动电源 © 2008 飞兆半导体公司 FAN73833 • Rev.1.0.2 www.fairchildsemi.com 3 应力若超过绝对最大额定值，可能会损坏器件。在超出推荐的工作条件的情况下，该器件可能无法正常工作，所以不建 议让器件在这些条件下长期工作。此外，长期在超出推荐的工作条件下工作，会影响器件的可靠性。绝对最大额定值仅 是应力规格值。除非另有规定，否则 TA=25°C。 符号 参数 VS 高侧偏置电压 VB 高侧浮动电源电压 VHO 高侧浮动输出电压 HO VDD 最小值 最大值 单位 VB-25 VB+0.3 V -0.3 625 V VS-0.3 VB+0.3 V 低侧和逻辑固定电源电压 -0.3 25 V VLO 低侧输出电压 LO -0.3 VDD+0.3 V VIN 逻辑输入电压 (HIN/LIN) -0.3 VDD+0.3 V VDD-25 VDD+0.3 V COM 逻辑接地和低侧驱动器返回 dVS/dt 容许偏置电压变化速率 PD(1)(2)(3) 功耗 50 V/ns 0.625 W θJA 结至环境热阻 200 °C/W TJ 结温 150 °C 150 °C TSTG -55 存储温度 注意： 1. 安装到 76.2 x 114.3 x 1.6 mm PCB 板 （FR-4 环氧玻璃材料）。 2. 参考以下标准： JESD51-2: 集成电路热测试方法环境条件 - 自然对流 JESD51-3: 含铅表面贴装封装的低有效导热系数测试板 3. 在任何情况下，都不要超过 PD。 推荐工作条件 推荐的操作条件表明确了器件的真实工作条件。指定推荐的工作条件，以确保器件的最佳性能达到数据表中的规格。 飞兆半导体建议不要超过推荐工作条件，也不能按照绝对最大额定值进行设计。 符号 VB VS 参数 最小值 最大值 单位 高侧浮动电源电压 VS+11 VS+20 V 高侧浮动电源偏置电压 6-VDD 600 V 低侧电源电压 11 20 V VHO 高侧 (HO) 输出电压 VS VB V VLO 低侧 (LO) 输出电压 COM VDD V VIN 逻辑输入电压 (HIN/LIN) COM VDD V TA 环境温度 -40 125 °C VDD © 2008 飞兆半导体公司 FAN73833 • Rev.1.0.2 www.fairchildsemi.com 4 FAN73833 — 半桥栅极驱动 IC 绝对最大额定值 除非另有规定，否则 VBIAS (VDD， VBS) = 15.0 V 和 TA=25°C。 VIN 和 IIN 参数是以 COM 为参考点的值。 VO 和 IO 参数 是以 VS 和 COM 为参考点的值，并分别适用于输出 HO 和 LO。 符号 参数 条件 最小值 典型值 最大值 单位 电源电流部分 IQBS 静态 VBS 电源电流 VIN=0 V 或 5 V 35 100 µA IQDD 静态 VDD 电源电流 VIN=0 V 或 5 V 80 200 µA IPBS 工作 VBS 电源电流 fIN=20 kHz， rms 值 420 750 µA IPDD 工作 VDD 电源电流 fIN=20 kHz， rms 值 420 750 µA 偏置电源的漏电流 VB=VS=600 V 10 µA ILK 电源部分 VDDUV+ VBSUV+ VDD 和 VBS 电源欠压正向（电压从高 到低）阈值 8.2 9.2 10.1 V VDDUVVBSUV- VDD 和 VBS 电源欠压负向（电压从低 到高）阈值 7.2 8.3 9.2 V VDDUVH VBSUVH VDD 电源欠压闭锁滞回电压回差 0.9 V 栅极驱动器输出部分 VOH 高电平输出电压， VBIAS-VO VOL 低电平输出电压， VO IO+(4) IO-(4) VS 输出高电平短路脉冲电流 输出低电平短路脉冲电流 IO=20 mA 1.0 V 0.6 V VO=0 V， VIN=5 V 和 PW