FAN7391MX

FAN7391 High-Current, High & Low-Side, Gate-Drive IC Features Description  Floating Channels for Bootstrap Operation to +600 V The FAN7391 is a monolithic high- and low-side gatedrive IC, which can drive high-speed MOSFETs and IGBTs that operate up to +600 V. It has a buffered output stage with all NMOS transistors designed for high pulse current driving capability and minimum cross-conduction.  Typically 4.5 A / 4.5 A Sourcing / Sinking Current        Driving Capability Common-Mode dv/dt Noise-Canceling Circuit Built-in Under-Voltage Lockout for Both Channels Built-in Advanced Input Filter Matched Propagation Delay for Both Channels Logic (VSS) and Power (COM) Ground ±5 V Offset 3.3 V and 5 V Input Logic Compatible Output In-Phase with Input High-voltage process and common-mode noise-canceling techniques provide stable operation of the high-side driver under high-dv/dt noise circumstances. An advanced level-shift circuit offers high-side gate driver operation up to VS=-9.8 V (typical) for VBS=15 V. The advanced input filter of HIN provides protection against short-pulsed input signals caused by noise. Applications The UVLO circuit prevents malfunction when VDD and VBS are lower than the specified threshold voltage.  Plasma Display Panel (PDP) Sustain Driver  High-Intensity Discharge (HID) Lamp Ballast  Switching Mode Power Supply (SMPS) The high-current and low-output voltage-drop feature makes this device suitable for the PDP sustain pulse driver, motor driver, switching mode power supply, and high-power DC-DC converter applications.  Motor Driver Related Resources  AN-6076 — Design and Application Guide of Boot- 14-SOP strap Circuit for High-Voltage Gate-Drive IC  AN-9052 — Design Guide for Selection of Bootstrap Components  AN-8102 — Recommendations to Avoid Short Pulse Width Issues in HVIC Gate Driver Applications Ordering Information Part Number Package Operating Temperature Range Packing Method FAN7391MX 14-SOP -40C ~ 125C Tape & Reel © 2014 Semiconductor Components Industries, LLC. FAN7391 Rev. 2 www.onsemi.com FAN7391 — High-Current, High & Low Side, Gate-Drive IC July 2017 FAN7391 — High-Current, High & Low Side, Gate-Drive IC Typical Application Circuit Figure 1. Application Circuit for Half-Bridge Internal Block Diagram Figure 2. Functional Block Diagram © 2014 Semiconductor Components Industries, LLC. FAN7391 Rev. 2 www.onsemi.com 3 FAN7391 — High-Current, High & Low Side, Gate-Drive IC Pin Configurations Figure 3. Pin Assignments (Top View) Pin Definitions 14-Pin Name Description 1 HIN Logic Input for High-Side Gate Driver Output 2 LIN Logic Input for Low-Side Gate Driver Output 3 VSS Logic Ground 5 COM Low-Side Driver Return 6 LO Low-Side Driver Output 7 VDD Low-Side and Logic Part Supply Voltage 11 VS High-Voltage Floating Supply Return 12 HO High-Side Driver Output 13 VB High-Side Floating Supply 4, 8, 9, 10, 14 NC No Connect © 2014 Semiconductor Components Industries, LLC. FAN7391 Rev. 2 www.onsemi.com 4 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA=25°C, unless otherwise specified. Symbol Characteristics VS High-Side Floating Supply Offset Voltage VB High-Side Floating Supply Voltage Min. Max. Unit VB-VSHUNT VB+0.3 V -0.3 625.0 V VB+0.3 V VHO High-Side Floating Output Voltage, HO Pin VS-0.3 VDD Low-Side and Logic Fixed Supply Voltage -0.3 VSHUNT V VLO Low-Side Output Voltage, LO Pin -0.3 VDD+0.3 V VIN Logic Input Voltage (HIN and LIN) VSS-0.3 VDD+0.3 V VSS Logic Ground VDD-25 VDD+0.3 V Allowable Offset Voltage Slew Rate 50 V/ns Power Dissipation 1.0 W JA Thermal Resistance, Junction-to-Ambient 110 C/W TJ Junction Temperature +150 C TSTG Storage Temperature +150 C dVS/dt PD(1)(2)(3) Notes: 1. Mounted on 76.2 x 114.3 x 1.6 mm PCB (FR-4 glass epoxy material). 2. Refer to the following standards: JESD51-2: Integral circuits thermal test method environmental conditions - natural convection; and JESD51-3: Low effective thermal conductivity test board for leaded surface-mount packages. 3. Do not exceed PD maximum under any circumstances. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to absolute maximum ratings. Symbol Parameter Min. Max. Unit VB High-Side Floating Supply Voltage VS+10 VS+20 V VS High-Side Floating Supply Offset Voltage 6-VDD 600 V VHO High-Side Output Voltage VS VB V VDD Low-Side and Logic Supply Voltage 10 20 V VLO Low-Side Output Voltage COM VDD V VIN Logic Input Voltage (HIN and LIN) VSS VDD V TA Operating Ambient Temperature -40 +125 C Pulse Width of Logic Input for High-Side Gate Driver 100 PWHIN © 2014 Semiconductor Components Industries, LLC. FAN7391 Rev. 2 ns www.onsemi.com 5 FAN7391 — High-Current, High & Low Side, Gate-Drive IC Absolute Maximum Ratings VBIAS (VDD, VBS)=15.0 V, VS=VSS=COM, TA=25C, unless otherwise specified. The VIL, VIH, and IIN parameters are referenced to VSS/COM and are applicable to the respective input signals HIN and LIN. The VO and IO parameters are referenced to COM and VS is applicable to the respective output signals HO and LO. Symbol Characteristics Condition Min. Typ. Max. Unit POWER SUPPLY SECTION (VDD AND VBS) VDDUV+ VBSUV+ VDD and VBS Supply Under-Voltage Positive-Going Threshold 8.0 8.8 9.8 VDDUVVBSUV- VDD and VBS Supply Under-Voltage Negative-Going Threshold 7.4 8.3 9.0 VDDUVH VDD and VBS Supply Under-Voltage VBSUVH Lockout Hysteresis Voltage V 0.5 ILK Offset Supply Leakage Current VB=VS=600 V 50 IQBS Quiescent VBS Supply Current VIN=0 V or 5 V 45 80 IQDD Quiescent VDD Supply Current VIN=0 V or 5 V 75 110 IPBS Operating VBS Supply Current fIN=20 kHz, rms value 530 640 IPDD Operating VDD Supply Current fIN=20 kHz, rms value 530 640 23 25 μA μA SHUNT REGULATOR SECTION VSHUNT VDD=Sweep or VBS=Sweep, ISHUNT=5 mA VDDand VBS Shunt Regulator Clamping Voltage 21 V LOGIC INPUT SECTION (HIN, LIN) VIH Logic "1" Input Voltage VIL Logic "0" Input Voltage IIN+ Logic "1" Input Bias Current VIN=5 V 25 50 IIN- Logic "0" Input Bias Current VIN=0 V 1.0 2.0 RIN Input Pull-Down Resistance 2.5 1.2 100 200 V μA k GATE DRIVER OUTPUT SECTION (HO, LO) VOH High-Level Output Voltage, VBIAS-VO No Load 1.0 V VOL Low-Level Output Voltage, VO No Load 35 mV IO+ Output High, Short-Circuit Pulsed Current(4) VO=0 V, VIN=5 V,PW