FCA36N60NF

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FCA36N60NF N-Channel SupreMOS® FRFET® MOSFET 600 V, 34.9 A, 95 mΩ Features Description • RDS(on) = 80 mΩ (Typ.) @ VGS = 10V, ID = 18 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SupreMOS FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. • Ultra Low Gate Charge (Typ. Qg = 86 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 338 pF) • 100% Avalanche Tested • RoHS Compliant Application • Solar Inverter • AC-DC Power Supply D G G D S TO-3PN S MOSFET Maximum Ratings TC = 25 Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage o C unless otherwise noted. Parameter Continuous (TC = 25oC) FCA36N60NF 600 Unit V ±30 V 34.9 ID Drain Current IDM Drain Current (Note 1) 104.7 A EAS Single Pulsed Avalanche Energy (Note 2) 1800 mJ IAR Avalanche Current (Note 1) 12 A EAR Repetitive Avalanche Energy (Note 1) 3.12 mJ dv/dt Continuous (TC = 100oC) Pulsed MOSFET dv/dt 100 Peak Diode Recovery dv/dt (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL Derate Above 25oC A 22 50 V/ns 312 W 2.6 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter FCA36N60NF RθJC Thermal Resistance, Junction to Case, Max. 0.40 RθCS Thermal Resistance, Case to Heat Sink, Typ. 0.24 RθJA Thermal Resistance, Junction to Ambient, Max. ©2011 Fairchild Semiconductor Corporation FCA36N60NF Rev. C2 Unit o C/W 40 1 www.fairchildsemi.com FCA36N60NF — N-Channel SupreMOS® FRFET® MOSFET May 2014 Part Number FCA36N60NF Top Mark FCA36N60NF Package TO-3PN Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit 600 - - V - 0.60 - V/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 1 mA, VGS = 0 V,TJ = 25oC ID = 1 mA, Referenced to 25oC VDS = 480 V, VGS = 0 V - - 10 - - 100 VGS = ±30 V, VDS = 0 V - - ±100 TJ = 125oC μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA 3.0 3.7 5.0 V Static Drain to Source On Resistance VGS = 10 V, ID = 18 A - 80 95 mΩ gFS Forward Transconductance VDS = 20 V, ID = 18 A - 39 - S VDS = 100 V, VGS = 0 V, f = 1 MHz - 3191 4245 pF - 145 195 pF pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 5 8 Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz - 81 - pF Cosseff. Effective Output Capacitance VDS = 0 V to 480 V, VGS = 0 V - 338 - pF Qg(tot) Total Gate Charge at 10V 86 112 nC Gate to Source Gate Charge VDS = 380 V, ID = 18 A, VGS = 10 V - Qgs - 16 - nC - 36 - nC - 1.2 - Ω - 27 64 ns - 17 44 ns - 92 194 ns - 4 18 ns Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance (G-S) (Note 4) f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380 V, ID = 18 A, VGS = 10 V, RG = 4.7 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 36 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 108 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 18 A - - 1.2 V trr Reverse Recovery Time 166 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 18 A, dIF/dt = 100 A/μs - 1.3 - μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 12 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 36 A, di/dt ≤ 1200 A/μs, VDD = 380 V, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2011 Fairchild Semiconductor Corporation FCA36N60NF Rev. C2 2 www.fairchildsemi.com FCA36N60NF — N-Channel SupreMOS® FRFET® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics 200 200 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.0 V 100 ID, Drain Current[A] 100 ID, Drain Current[A] Figure 2. Transfer Characteristics *Notes: 1. 250μs Pulse Test 10 o 2. TC = 25 C 1 0.1 1 VDS, Drain-Source Voltage[V] 10 10 o -55 C 1 0.2 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage o 25 C o 150 C *Notes: 1. VDS = 20V 2. 250μs Pulse Test 2 4 6 8 VGS, Gate-Source Voltage[V] 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 200 150 IS, Reverse Drain Current [A] RDS(ON) [mΩ], Drain-Source On-Resistance 100 125 VGS = 10V 100 VGS = 20V 75 10 o 150 C o 25 C 1 *Notes: 1. VGS = 0V o 50 *Notes: TC = 25 C 0 18 36 54 72 ID, Drain Current [A] 90 0.2 0.2 108 Figure 5. Capacitance Characteristics Capacitances [pF] VGS, Gate-Source Voltage [V] 10 10000 Ciss 1000 Coss 10 1.4 Figure 6. Gate Charge Characteristics 100000 100 2. 250μs Pulse Test 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] *Notes: 1. VGS = 0V 2. f = 1MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 0.1 Crss 1 10 100 VDS, Drain-Source Voltage [V] ©2011 Fairchild Semiconductor Corporation FCA36N60NF Rev. C2 8 VDS = 300V 6 3 VDS = 480V 4 2 0 600 VDS = 120V *Notes: ID = 18A 0 20 40 60 80 Qg, Total Gate Charge [nC] 100 www.fairchildsemi.com FCA36N60NF — N-Channel SupreMOS® FRFET® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 1mA 0.8 -100 -50 0 50 100 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 0.0 -100 150 *Notes: 1. VGS = 10V 2. ID = 18A 0.5 -50 0 50 100 o TJ, Junction Temperature [ C] 150 Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 500 40 100 10μs 100μs ID, Drain Current [A] ID, Drain Current [A] RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1ms 10 10ms Operation in This Area is Limited by R DS(on) 1 DC *Notes: 0.1 o 30 20 10 1. TC = 25 C o 0.01 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 o ZThermal Response θJC(t), Thermal Response [ZθJC[] C/W] Figure 11. Transient Thermal Response Curve 1 0.5 0.1 0.2 0.1 PDM 0.05 0.01 t1 0.02 0.01 *Notes: Single pulse 0.005 -5 10 t2 o 1. ZθJC(t) = 0.40 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 10 -3 -2 -1 0 10 10 10 10 RectangularPulse Pulse Duration [sec] t , Rectangular Duration [sec] 1 10 2 10 1 ©2011 Fairchild Semiconductor Corporation FCA36N60NF Rev. C2 4 www.fairchildsemi.com FCA36N60NF — N-Channel SupreMOS® FRFET® MOSFET Typical Performance Characteristics (Continued) FCA36N60NF — N-Channel SupreMOS® FRFET® MOSFET IG = const. Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 13. Resistive Switching Test Circuit & Waveforms VGS Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FCA36N60NF Rev. C2 5 www.fairchildsemi.com FCA36N60NF — N-Channel SupreMOS® FRFET® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FCA36N60NF Rev. C2 6 www.fairchildsemi.com 5.00 4.60 1.65 1.45 16.20 15.40 5.20 4.80 13.80 13.40 3.30 3.10 R0.50 3° 20.10 19.70 16.96 16.56 18.90 18.50 3° 1 3 3.70 3.30 1.85 2.20 1.80 3.20 2.80 2.00 1.60 4° 2.60 2.20 20.30 19.70 1.20 0.80 0.55 M 5.45 R0.50 0.75 0.55 5.45 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC-65 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSION AND TOLERANCING PER ASME14.5-2009. D) DIMENSIONS ARE EXCLUSSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSSIONS. E) DRAWING FILE NAME: TO3PN03AREV2. F) FAIRCHILD SEMICONDUCTOR. 7.20 6.80 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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