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FCA47N60 / FCA47N60_F109
N-Channel SuperFET® MOSFET
600 V, 47 A, 70 mΩ
Features
Description
• 650 V @ TJ = 150°C
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications.
• Typ. RDS(on) = 58 mΩ
• Ultra Low Gate Charge (Typ. Qg= 210 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF)
• 100% Avalanche Tested
Application
• Solar Invertor
• AC-DC Power Supply
D
G
G
TO-3PN
D
S
S
Absolute Maximum Ratings
Symbol
Parameter
FCA47N60
FCA47N60_F109
Unit
VDSS
Drain-Source Voltage
600
V
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
47
29.7
A
A
IDM
Drain Current
- Pulsed
141
A
VGSS
Gate-Source voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
1800
mJ
IAR
Avalanche Current
(Note 1)
47
A
(Note 1)
EAR
Repetitive Avalanche Energy
(Note 1)
41.7
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation
417
3.33
W
W/°C
-55 to +150
°C
300
°C
(TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Typ.
Max.
Unit
RθJC
Symbol
Thermal Resistance, Junction-to-Case, Max.
Parameter
--
0.3
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient, Max.
--
41.7
°C/W
©2010 Fairchild Semiconductor Corporation
FCA47N60 / FCA47N60_F109 Rev. 1
1
www.fairchildsemi.com
FCA47N60 / FCA47N60_F109 — N-Channel SuperFET® MOSFET
September 2017
Device Marking
FCA47N60
Device
FCA47N60
Package
TO-3PN
Reel Size
-
Tape Width
-
Quantity
30
FCA47N60
FCA47N60_F109
TO-3PN
-
-
30
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 μA, TJ = 25°C
600
--
--
V
VGS = 0 V, ID = 250 μA, TJ = 150°C
--
650
--
V
ID = 250 μA, Referenced to 25°C
--
0.6
--
V/°C
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
BVDS
Drain-Source Avalanche Breakdown
Voltage
VGS = 0 V, ID = 47 A
--
700
--
V
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
---
---
1
10
μA
μA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 μA
3.0
--
5.0
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 23.5 A
--
0.058
0.07
gFS
Forward Transconductance
VDS = 20 V, ID = 23.5 A
--
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 μA
3.0
40
--
-5.0
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
5900
8000
pF
--
3200
4200
pF
Crss
Reverse Transfer Capacitance
--
250
--
pF
Coss
Output Capacitance
VDS = 480 V, VGS = 0 V, f = 1.0 MHz
--
160
--
pF
Coss eff.
Effective Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
--
420
--
pF
VDD = 300 V, ID = 47 A
RG = 25 Ω
--
185
430
ns
--
210
450
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
(Note 4)
VDS = 480 V, ID = 47 A
VGS = 10 V
(Note 4)
--
520
1100
ns
--
75
160
ns
nC
--
210
270
--
38
--
nC
--
110
--
nC
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
47
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
141
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 47 A
--
--
1.4
V
trr
Reverse Recovery Time
--
590
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 47 A
dIF/dt =100 A/μs
--
25
--
μC
(Note 4)
Notes:
1. Repetitive Rating: Pulse-width limited by maximum junction temperature.
2. IAS = 18 A, RG = 25 Ω, starting TJ = 25°C
3. ISD ≤ 47 A, di/dt ≤ 200 A/μs, VDD = 380 V, starting TJ = 25°C
4. Essentially independent of operating temperature typical characteristics.
©2010 Fairchild Semiconductor Corporation
FCA47N60 / FCA47N60_F109 Rev. 1
2
www.fairchildsemi.com
FCA47N60 / FCA47N60_F109 — N-Channel SuperFET® MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
ID, Drain Current [A]
10
2
ID , Drain Current [A]
2
1
10
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
0
10
-1
0
10
10
150℃
1
10
-55℃
※ Note
1. VDS = 40V
2. 250μ s Pulse Test
0
10
2
1
10
25℃
10
4
10
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.20
IDR , Reverse Drain Current [A]
RDS(ON) [Ω ],Drain-Source On-Resistance
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.15
VGS = 10V
0.10
VGS = 20V
0.05
0
20
40
60
80
100
120
140
160
180
2
10
1
10
150℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
0
200
0.2
0.6
0.4
Figure 5. Capacitance Characteristics
1.0
1.2
1.4
1.6
Figure 6. Gate Charge Characteristics
30000
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
20000
VDS = 100V
VGS, Gate-Source Voltage [V]
25000
Coss
15000
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Ciss
10000
0
-1
10
0.8
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
5000
25℃
10
※ Note : TJ = 25℃
0.00
Capacitance [pF]
6
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Crss
0
10
10
VDS = 250V
VDS = 400V
8
6
4
2
※ Note : ID = 47A
0
1
0
50
100
150
200
250
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
©2010 Fairchild Semiconductor Corporation
FCA47N60 / FCA47N60_F109 Rev. 1
10
3
www.fairchildsemi.com
FCA47N60 / FCA47N60_F109 — N-Channel SuperFET® MOSFET
Typical Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.9
0.8
-100
0
-50
50
100
150
2.5
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 47 A
0.5
0.0
-100
200
-50
0
o
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
50
Operation in This Area
is Limited by R DS(on)
2
100 us
40
1 ms
ID, Drain Current [A]
ID, Drain Current [A]
10
10 ms
1
10
DC
0
10
※ Notes :
o
1. TC = 25 C
-1
10
0
10
20
10
o
2. TJ = 150 C
3. Single Pulse
-2
10
30
1
2
10
0
25
3
10
10
50
VDS, Drain-Source Voltage [V]
75
100
125
150
TC, Case Temperature [℃]
Zθ JC(t), Thermal Response
Figure 11. Transient Thermal Response Curve
D = 0 .5
10
-1
※ N o te s :
1 . Z θ J C( t) = 0 .3 ℃ /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C( t)
0 .2
0 .1
PDM
0 .0 5
t1
0 .0 2
10
-2
10
0 .0 1
-5
t2
s in g le p u ls e
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
©2010 Fairchild Semiconductor Corporation
FCA47N60 / FCA47N60_F109 Rev. 1
4
www.fairchildsemi.com
FCA47N60 / FCA47N60_F109 — N-Channel SuperFET® MOSFET
Typical Characteristics (Continued)
FCA47N60 / FCA47N60_F109 — N-Channel SuperFET® MOSFET
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
VDD
VGS
VGS
DUT
V
10V
GS
90%
10%
td(on)
tr
t on
td(off)
tf
t off
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
©2010 Fairchild Semiconductor Corporation
FCA47N60 / FCA47N60_F109 Rev. 1
5
www.fairchildsemi.com
FCA47N60 / FCA47N60_F109 — N-Channel SuperFET® MOSFET
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
©2010 Fairchild Semiconductor Corporation
FCA47N60 / FCA47N60_F109 Rev. 1
6
www.fairchildsemi.com
FCA47N60 / FCA47N60_F109 — N-Channel SuperFET® MOSFET
Mechanical Dimensions
Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3PN-003
©2010 Fairchild Semiconductor Corporation
FCA47N60 / FCA47N60_F109 Rev. 1
7
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
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up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I68
©2010 Fairchild Semiconductor Corporation
FCA47N60 / FCA47N60_F109 Rev. 1
8
www.fairchildsemi.com
FCA47N60 / FCA47N60_F109 — N-Channel SuperFET® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
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®*
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Green FPS™ e-Series™
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Marking Small Speakers Sound Louder
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Saving our world, 1mW/W/kW at a time™
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