FCA47N60F

FCA47N60F N-Channel SuperFET® FRFET® MOSFET 600 V, 47 A, 73 m 特性 说明 • 650 V @ TJ = 150 °C SuperFET® MOSFET 是飞兆半导体第一代利用电荷平衡技术实 现 出色 低 导通 电 阻和 更 低栅 极 电荷 性 能的 高 压超 级 结 (SJ) MOSFET 系列产品。这项技术专用于最小化导通损耗并提供卓 越的开关性能、 dv/dt 额定值和更高雪崩能量。因此， SuperFET MOSFET 非常适合开关电源应用，如功率因数校正 (PFC)、服务 器 / 电信电源、平板电视电源、 ATX 电源及工业电源应用。 SuperFET FRFET® MOSFET 优化体二极管的反向恢复性能可 去除额外元件并提高系统可靠性。 • 典型值 RDS(on) = 62 m • 快速恢复时间 （典型值 Trr = 240 ns) • 超低栅极电荷 （典型值 Qg = 210 nC) • 低有效输出电容 （典型值 Coss(eff.)= 420 pF) • 100% 经过雪崩测试 • 符合 RoHS 标准 应用 • 光伏逆变器 • AC-DC 电源 D G G D TO-3PN S S 最大绝对额定值 TC = 25°C 除非另有说明。 符号 FCA47N60F 单位 600 V 47 29.7 A A （说明 1） 141 A  30 V 1800 mJ 参数 VDSS 漏极－源极电压 ID 漏极电流 - 连续 (TC = 25°C) - 连续 (TC = 100°C) IDM 漏极电流 - 脉冲 VGSS 栅极至源极电压 EAS 单脉冲雪崩能量 （说明 2） IAR 雪崩电流 （说明 1） 47 A EAR 重复雪崩能量 （说明 1） 41.7 mJ dv/dt 二极管恢复 dv/dt 峰值 （说明 3） (TC = 25°C) - 超过 25°C 时降额 PD 功耗 TJ， TSTG 工作和存储温度范围 TL 用于焊接的最高引脚温度， 距离外壳 1/8”，持续 5 秒 50 V/ns 417 3.33 W W/°C -55 至 +150 °C 300 °C 热性能 FCA47N60F 单位 结至外壳热阻最大值 0.3 °C/W 结至环境热阻最大值 41.7 °C/W 符号 RJC RJA ©2007 飞兆半导体公司 FCA47N60F Rev. 1 参数 1 www.RQsemi.com FCA47N60F — N 沟道 SuperFET® FRFET® MOSFET 201 年  月 器件编号 FCA47N60F 顶标 FCA47N60F 封装 TO-3PN 包装方法 塑料管 卷尺寸 N/A 带宽 N/A 数量 30 单元 电气特性 TC=25°C 除非另有说明。 符号 参数 工作条件 最小值 典型值 最大值 单位 VGS = 0 V, ID = 250 A, TJ = 25°C 600 -- -- V VGS = 0 V, ID = 250 A, TJ = 150°C -- 650 -- V 关断特性 BVDSS 漏极－源极击穿电压 BVDSS / TJ 击穿电压温度系数 ID = 250 A，参考 25°C -- 0.6 -- V/C BVDS 漏源极雪崩击穿电压 VGS = 0 V, ID = 47 A -- 700 -- V IDSS 零栅极电压漏极电流 VDS = 600 V, VGS = 0 V, VDS = 480 V, TC = 125C --- --- 10 100 A A IGSSF 栅极 - 体漏电流，正向 VGS = 30 V, VDS = 0 V -- -- 100 nA 栅极 - 体漏电流，反向 VGS = -30 V, VDS = 0 V -- -- -100 nA VGS(th) 栅极阈值电压 VDS = VGS, ID = 250 A 3.0 -- 5.0 V RDS(on) 漏极－源极 导通电阻 VGS = 10 V, ID = 23.5 A -- 0.062 0.073  gFS 正向跨导 VDS = 20 V, ID = 23.5 A 输入电容 VDS = 25 V, VGS = 0 V, f = 1 MHz IGSSR 导通特性 -- 40 -- S 动态特性 Ciss Coss 输出电容 Crss 反向传输电容 Coss Coss(eff.) -- 5900 8000 pF -- 3200 4200 pF -- 250 -- pF 输出电容 VDS = 480 V, VGS = 0 V, f = 1 MHz -- 160 -- pF 有效输出电容 VDS = 0 V 至 400 V, VGS = 0 V -- 420 -- pF 导通延迟时间 VDD = 300 V, ID = 47 A, VGS = 10 V, RG = 25  -- 185 430 ns -- 210 450 ns -- 520 1100 ns -- 75 160 ns -- 210 270 nC -- 38 -- nC -- 110 -- nC 开关特性 td(on) tr 开通上升时间 td(off) 关断延迟时间 tf 关断下降时间 Qg 总栅极电荷 Qgs Qgd 栅源极电荷 （说明 4） VDS = 480 V, ID = 47 A, VGS = 10 V （说明 4） 栅漏极电荷 漏极 - 源极二极管特性和最大额定值 IS 漏源极二极管最大正向连续电流 -- -- 47 A ISM 漏源极二极管最大正向脉冲电流 -- -- 141 A VSD 漏极 - 源极二极管正向电压 VGS = 0 V, IS = 47 A -- -- 1.4 V trr 反向恢复时间 -- 240 -- ns Qrr 反向恢复电荷 VGS = 0 V, IS = 47 A, dIF/dt = 100 A/s -- 2.04 -- C 注意： 1. 重复额定值：脉冲宽度受限于最大结温。 2. IAS=18 A， VDD=50 V， RG=25 ，开始 TJ=25°C。 3. ISD  47 A， di/dt  1200 A/s， VDD  BVDSS，开始 TJ=25°C。 4. 本质上独立于工作温度的典型特性。 ©2007 飞兆半导体公司 FCA47N60F Rev. 1 2 www.RQsemi.com FCA47N60F — N 沟道 SuperFET® FRFET® MOSFET 封装标识与定购信息 图 1. 导通区域特性 图 2. 传输特性 VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ID, Drain Current [A] 10 2 1 10 * Notes : 1. 250s Pulse Test o 2. TC = 25 C 0 10 -1 0 10 10 ID , Drain Current [A] 2 150C 1 10 -55C - Note 1. VDS = 40V 0 2. 250s Pulse Test 10 2 1 10 25C 10 4 VDS, Drain-Source Voltage [V] 8 10 图 4. 体二极管正向电压变化与源电流和温度的关系 0.25 IDR , Reverse Drain Current [A] RDS(ON) [],Drain-Source On-Resistance 图 3. 导通电阻变化与漏极电流和栅极电压 0.20 0.15 VGS = 10V 0.10 VGS = 20V 0.05 2 10 1 10 150C 25C * Notes : 1. VGS = 0V 2. 250s Pulse Test * Note : TJ = 25C 0.00 0 0 20 40 60 80 100 120 140 160 180 10 200 0.2 0.4 0.6 图 5. 电容特性 VGS, Gate-Source Voltage [V] 15000 * Notes : 1. VGS = 0 V 2. f = 1 MHz Ciss Crss 10 1.6 0 10 1 10 VDS = 250V VDS = 400V 8 6 4 2 * Note : ID = 47A 0 0 50 100 150 200 250 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] ©2007 飞兆半导体公司 FCA47N60F Rev. 1 1.4 VDS = 100V Coss 0 -1 10 1.2 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 20000 5000 1.0 图 6. 栅极电荷特性 25000 10000 0.8 VSD , Source-Drain Voltage [V] ID, Drain Current [A] Capacitance [pF] 6 VGS , Gate-Source Voltage [V] 3 www.RQsemi.com FCA47N60F — N 沟道 SuperFET® FRFET® MOSFET 典型性能特征 图 7. 击穿电压变化与温度的关系 图 8. 导通电阻变化与温度的关系 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2. ID = 250A 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 23.5 A 0.5 0.0 -100 200 -50 0 TJ, Junction Temperature [C] 50 100 150 200 TJ, Junction Temperature [C] 图 9. 安全工作区 图 10. 最大漏极电流与壳温的关系 50 Operation in This Area is Limited by R DS(on) 2 40 100 s ID, Drain Current [A] ID, Drain Current [A] 10 1 ms 10 ms 1 10 DC * Notes : 1. TC = 25C 2. TJ = 150C 3. Single Pulse 0 10 0 10 20 10 -1 10 30 1 2 10 0 25 3 10 10 50 75 100 125 150 TC, Case Temperature [C] VDS, Drain-Source Voltage [V] JC ZJCZ(t) 热响应 [oC/W] (t), Thermal Response 图 11. 瞬态热响应曲线 D = 0 .5 10 -1 * N o te s : 1 . Z  J C ( t) = 0 .3  C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z  J C ( t) 0 .2 0 .1 PDM 0 .0 5 10 -2 10 t1 0 .0 2 0 .0 1 -5 t2 s in g le p u ls e 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] ©2007 飞兆半导体公司 FCA47N60F Rev. 1 4 www.RQsemi.com FCA47N60F — N 沟道 SuperFET® FRFET® MOSFET 典型性能特性 （接上页） FCA47N60F — N 沟道 SuperFET® FRFET® MOSFET 图 12. 栅极电荷测试电路与波形 VGS Same Type as DUT 50KΩ 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT IG= 常量 3mA Charge 图 13. 阻性开关测试电路与波形 VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off 图 14. 非箝位感性开关测试电路与波形 BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD VDS (t) VDD DUT tp ©2007 飞兆半导体公司 FCA47N60F Rev. 1 ID (t) tp 5 Time www.RQsemi.com FCA47N60F — N 沟道 SuperFET® FRFET® MOSFET 图 15. 峰值二极管恢复 dv/dt 测试电路与波形 DUT + VDS _ I SD L Driver RG Same Type as DUT VGS VGS ( Driver ) VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2007 飞兆半导体公司 FCA47N60F Rev. 1 6 www.RQsemi.com FCA47N60F — N 沟道 SuperFET® FRFET® MOSFET 机械尺寸 图 16. TO3， 3 引脚、塑料， EIAJ SC-65 封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 / 或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件，尤其是其中涉及飞兆公司 产品保修的部分。 随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸. ©2007 飞兆半导体公司 FCA47N60F Rev. 1 7 www.RQsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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