FCA47N60_F109

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Other names and brands may be claimed as the property of others. FCA47N60 / FCA47N60_F109 N-Channel SuperFET® MOSFET 600 V, 47 A, 70 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. • Typ. RDS(on) = 58 mΩ • Ultra Low Gate Charge (Typ. Qg= 210 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF) • 100% Avalanche Tested Application • Solar Invertor • AC-DC Power Supply D G G TO-3PN D S S Absolute Maximum Ratings Symbol Parameter FCA47N60 FCA47N60_F109 Unit VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) 47 29.7 A A IDM Drain Current - Pulsed 141 A VGSS Gate-Source voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 1800 mJ IAR Avalanche Current (Note 1) 47 A (Note 1) EAR Repetitive Avalanche Energy (Note 1) 41.7 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation 417 3.33 W W/°C -55 to +150 °C 300 °C (TC = 25°C) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Typ. Max. Unit RθJC Symbol Thermal Resistance, Junction-to-Case, Max. Parameter -- 0.3 °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. -- 41.7 °C/W ©2010 Fairchild Semiconductor Corporation FCA47N60 / FCA47N60_F109 Rev. 1 1 www.fairchildsemi.com FCA47N60 / FCA47N60_F109 — N-Channel SuperFET® MOSFET September 2017 Device Marking FCA47N60 Device FCA47N60 Package TO-3PN Reel Size - Tape Width - Quantity 30 FCA47N60 FCA47N60_F109 TO-3PN - - 30 Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA, TJ = 25°C 600 -- -- V VGS = 0 V, ID = 250 μA, TJ = 150°C -- 650 -- V ID = 250 μA, Referenced to 25°C -- 0.6 -- V/°C ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient BVDS Drain-Source Avalanche Breakdown Voltage VGS = 0 V, ID = 47 A -- 700 -- V IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125°C --- --- 1 10 μA μA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 3.0 -- 5.0 RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 23.5 A -- 0.058 0.07 gFS Forward Transconductance VDS = 20 V, ID = 23.5 A -- VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 3.0 40 -- -5.0 Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 5900 8000 pF -- 3200 4200 pF Crss Reverse Transfer Capacitance -- 250 -- pF Coss Output Capacitance VDS = 480 V, VGS = 0 V, f = 1.0 MHz -- 160 -- pF Coss eff. Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V -- 420 -- pF VDD = 300 V, ID = 47 A RG = 25 Ω -- 185 430 ns -- 210 450 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 4) VDS = 480 V, ID = 47 A VGS = 10 V (Note 4) -- 520 1100 ns -- 75 160 ns nC -- 210 270 -- 38 -- nC -- 110 -- nC Drain-Source Diode Characteristics IS Maximum Continuous Drain-Source Diode Forward Current -- -- 47 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 141 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 47 A -- -- 1.4 V trr Reverse Recovery Time -- 590 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 47 A dIF/dt =100 A/μs -- 25 -- μC (Note 4) Notes: 1. Repetitive Rating: Pulse-width limited by maximum junction temperature. 2. IAS = 18 A, RG = 25 Ω, starting TJ = 25°C 3. ISD ≤ 47 A, di/dt ≤ 200 A/μs, VDD = 380 V, starting TJ = 25°C 4. Essentially independent of operating temperature typical characteristics. ©2010 Fairchild Semiconductor Corporation FCA47N60 / FCA47N60_F109 Rev. 1 2 www.fairchildsemi.com FCA47N60 / FCA47N60_F109 — N-Channel SuperFET® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] 10 2 ID , Drain Current [A] 2 1 10 ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ 0 10 -1 0 10 10 150℃ 1 10 -55℃ ※ Note 1. VDS = 40V 2. 250μ s Pulse Test 0 10 2 1 10 25℃ 10 4 10 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.20 IDR , Reverse Drain Current [A] RDS(ON) [Ω ],Drain-Source On-Resistance Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.15 VGS = 10V 0.10 VGS = 20V 0.05 0 20 40 60 80 100 120 140 160 180 2 10 1 10 150℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 0 200 0.2 0.6 0.4 Figure 5. Capacitance Characteristics 1.0 1.2 1.4 1.6 Figure 6. Gate Charge Characteristics 30000 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 20000 VDS = 100V VGS, Gate-Source Voltage [V] 25000 Coss 15000 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz Ciss 10000 0 -1 10 0.8 VSD , Source-Drain Voltage [V] ID, Drain Current [A] 5000 25℃ 10 ※ Note : TJ = 25℃ 0.00 Capacitance [pF] 6 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Crss 0 10 10 VDS = 250V VDS = 400V 8 6 4 2 ※ Note : ID = 47A 0 1 0 50 100 150 200 250 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] ©2010 Fairchild Semiconductor Corporation FCA47N60 / FCA47N60_F109 Rev. 1 10 3 www.fairchildsemi.com FCA47N60 / FCA47N60_F109 — N-Channel SuperFET® MOSFET Typical Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.9 0.8 -100 0 -50 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 47 A 0.5 0.0 -100 200 -50 0 o 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 50 Operation in This Area is Limited by R DS(on) 2 100 us 40 1 ms ID, Drain Current [A] ID, Drain Current [A] 10 10 ms 1 10 DC 0 10 ※ Notes : o 1. TC = 25 C -1 10 0 10 20 10 o 2. TJ = 150 C 3. Single Pulse -2 10 30 1 2 10 0 25 3 10 10 50 VDS, Drain-Source Voltage [V] 75 100 125 150 TC, Case Temperature [℃] Zθ JC(t), Thermal Response Figure 11. Transient Thermal Response Curve D = 0 .5 10 -1 ※ N o te s : 1 . Z θ J C( t) = 0 .3 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C( t) 0 .2 0 .1 PDM 0 .0 5 t1 0 .0 2 10 -2 10 0 .0 1 -5 t2 s in g le p u ls e 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] ©2010 Fairchild Semiconductor Corporation FCA47N60 / FCA47N60_F109 Rev. 1 4 www.fairchildsemi.com FCA47N60 / FCA47N60_F109 — N-Channel SuperFET® MOSFET Typical Characteristics (Continued) FCA47N60 / FCA47N60_F109 — N-Channel SuperFET® MOSFET Figure 12. Gate Charge Test Circuit & Waveform Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms VGS ©2010 Fairchild Semiconductor Corporation FCA47N60 / FCA47N60_F109 Rev. 1 5 www.fairchildsemi.com FCA47N60 / FCA47N60_F109 — N-Channel SuperFET® MOSFET Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2010 Fairchild Semiconductor Corporation FCA47N60 / FCA47N60_F109 Rev. 1 6 www.fairchildsemi.com FCA47N60 / FCA47N60_F109 — N-Channel SuperFET® MOSFET Mechanical Dimensions Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3PN-003 ©2010 Fairchild Semiconductor Corporation FCA47N60 / FCA47N60_F109 Rev. 1 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I68 ©2010 Fairchild Semiconductor Corporation FCA47N60 / FCA47N60_F109 Rev. 1 8 www.fairchildsemi.com FCA47N60 / FCA47N60_F109 — N-Channel SuperFET® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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