FCA76N60N

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Other names and brands may be claimed as the property of others. FCA76N60N N-Channel SupreMOS® MOSFET 600 V, 76 A, 36 mΩ Features Description • RDS(on) = 28 mΩ (Typ. ) @ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is ON Semiconductor’s next generation of high voltage super-junction (SJ) technology • Ultra Low Gate Charge (Typ. Qg = 218 nC) employing a deep trench filling process that differentiates it from • Low Effective Output Capacitance (Typ. Coss(eff.) = 914 pF) the conventional SJ MOSFETs. This advanced technology and • 100% Avalanche Tested precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS • RoHS Compliant MOSFET is suitable for high frequency switching power con- Application verter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. • Solar Inverter • AC-DC Power Supply D G G D S TO-3PN S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage - Continuous (TC = 25oC) FCA76N60N 600 Unit V ±30 V 76 ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 76 A EAR Repetitive Avalanche Energy (Note 1) 5.40 mJ MOSFET dv/dt Ruggedness (Note 3) 100 dv/dt - Continuous (TC = 100oC) - Pulsed (Note 1) 228 A (Note 2) 8022 mJ Peak Diode Recovery dv/dt 12 (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL A 48.1 - Derate Above 25oC V/ns 543 W 5.40 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter FCA76N60N RθJC Thermal Resistance, Junction to Case, Max. RθJA Thermal Resistance, Junction to Ambient, Max. ©2010 Semiconductor Components Industries, LLC. FCA76N60N Rev. 1 0.23 1 40 Unit o C/W www.onsemi.com FCA76N60N — N-Channel SupreMOS® MOSFET Sept 2017 Part Number FCA76N60N Top Mark FCA76N60N Electrical Characteristics Symbol Package TO-3PN Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units TC = 25oC unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit 600 - - V - 0.73 - V/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 1 mA, VGS = 0 V,TJ = 25oC ID = 1 mA, Referenced to 25oC VDS = 480 V, VGS = 0 V - - 10 VDS = 480 V, TJ = 125oC - - 100 VGS = ±30 V, VDS = 0 V - - ±100 2.0 - 4.0 V - 28.5 36.0 mΩ 88 - S μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA Static Drain to Source On Resistance VGS = 10 V, ID = 38 A gFS Forward Transconductance VDS = 20 V, ID = 38 A - Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss VDS = 100 V, VGS = 0 V, f = 1 MHz - 9310 12385 pF - 370 495 pF - 3.1 5.0 pF Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz - 196 - pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 380 V, VGS = 0 V - 914 - pF - 218 285 nC VDS = 380 V, ID = 38 A, VGS = 10 V - 39 - nC - 66 - nC - 1.0 - Ω - 34 78 ns - 24 58 ns - 235 480 ns - 32 74 ns Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance (G-S) (Note 4) f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380 V, ID = 38 A, VGS = 10 V, RG = 4.7 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 76 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 228 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 38 A - - 1.2 V trr Reverse Recovery Time 613 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 38 A, dIF/dt = 100 A/μs - 16 - μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 25.3 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 76 A, di/dt ≤ 200 A/μs, VDD ≤ 380 V, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2010 Semiconductor Components Industries, LLC. FCA76N60N Rev. 1 2 www.onsemi.com FCA76N60N — N-Channel SupreMOS® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1000 VGS = 15.0 V 10.0 V 6.0 V 5.5 V 5.0 V 4.5 V 100 ID, Drain Current[A] ID, Drain Current[A] 1000 10 100 o 150 C o 25 C 10 o -55 C *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 2. TC = 25 C 1 0.1 1 VDS, Drain-Source Voltage[V] 10 1 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 6 VGS, Gate-Source Voltage[V] 1000 IS, Reverse Drain Current [A] 45 40 VGS = 10V 35 VGS = 20V 30 100 o 150 C o 25 C 10 *Notes: 1. VGS = 0V o 25 *Notes: TC = 25 C 0 50 100 150 200 ID, Drain Current [A] 250 1 0.2 300 2. 250μs Pulse Test 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] 1.4 Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 100000 10 1000 100 10 VGS, Gate-Source Voltage [V] Ciss 10000 Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 50 RDS(ON) [mΩ], Drain-Source On-Resistance 2 Coss *Notes: 1. VGS = 0V 2. f = 1MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 0.1 VDS = 300V 6 VDS = 480V 4 2 Crss 1 10 100 VDS, Drain-Source Voltage [V] ©2010 Semiconductor Components Industries, LLC. FCA76N60N Rev. 1 VDS = 120V 8 0 600 3 *Notes: ID = 38A 0 40 80 120 160 200 Qg, Total Gate Charge [nC] 240 www.onsemi.com FCA76N60N — N-Channel SupreMOS® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 1mA 0.8 -80 -40 0 40 80 120 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 38A 0.5 0.0 -80 160 Figure 9. Maximum Safe Operating Area -40 0 40 80 120 o TJ, Junction Temperature [ C] 160 Figure 10. Maximum Drain Current vs. Case Temperature 500 80 30μs 100 100μs 1ms 10 ID, Drain Current [A] ID, Drain Current [A] 2.5 10ms Operation in This Area is Limited by R DS(on) 1 DC *Notes: 0.1 o 1. TC = 25 C 60 40 20 o 0.01 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve ZθJC(t), Thermal Response [oC/W] Thermal Response [ZθJC] 1 0.1 0.5 0.2 PDM 0.1 0.01 t1 0.05 *Notes: 0.02 o 0.01 1. ZθJC(t) = 0.23 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.005 -5 10 t2 -4 10 ©2010 Semiconductor Components Industries, LLC. FCA76N60N Rev. 1 -3 -2 -1 0 10 10 10 10 Rectangular Pulse Duration t1, Rectangular Pulse Duration [sec][sec] 4 1 10 2 10 www.onsemi.com FCA76N60N — N-Channel SupreMOS® MOSFET Typical Performance Characteristics (Continued) FCA76N60N — N-Channel SupreMOS® MOSFET IG = const. Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 13. Resistive Switching Test Circuit & Waveforms VGS Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2010 Semiconductor Components Industries, LLC. FCA76N60N Rev. 1 5 www.onsemi.com FCA76N60N — N-Channel SupreMOS® MOSFET DUT + VDS _ I SD L Driver RG Same Type as DUT VGS VGS ( Driver ) VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2010 Semiconductor Components Industries, LLC. FCA76N60N Rev. 1 6 www.onsemi.com FCA76N60N — N-Channel SupreMOS® MOSFET Mechanical Dimensions Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering our components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of our worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. Always visit ON Semiconductor’s online packaging area for the most recent package drawings. ©2010 Semiconductor Components Industries, LLC. FCA76N60N Rev. 1 7 www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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