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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FCB110N65F
N-Channel SuperFET® II FRFET® MOSFET
650 V, 35 A, 110 mΩ
Features
Description
• 700 V @TJ = 150°C
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance.
• Typ. RDS(on) = 96 mΩ (Typ.)
• Ultra Low Gate Charge (Typ. Qg = 98 nC)
SuperFET® II FRFET® MOSFET combines a faster and more
rugged intrinsic body diode performance with fast switching,
• Low Effective Output Capacitance (Typ. Coss(eff.) = 464 pF)
• 100% Avalanche Tested
aimed at achieving better reliability and efficiency especially in
resonant switching applications.
• RoHS Compliant
SuperFET® II FRFET® is very suitable for the switching power
applications such as server/telecom power, Solar inverter, FPD
TV power, computing power, lighting and industrial power applications.
Applications
• Telecom/Server Power Supplies • Solar Inverters
• Computing Power Supplies
• FPD TV Power/Lighting
D
D
G
S
G
D2-PAK
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
Drain to Source Voltage
VGSS
Gate to Source Voltage
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
8
A
EAR
Repetitive Avalanche Energy
(Note 1)
3.57
mJ
MOSFET dv/dt
(Note 3)
100
dv/dt
Parameter
- DC
±20
- AC
±30
- Continuous (TC = 25oC)
- Pulsed
(Note 1)
105
A
809
mJ
(TC = 25oC)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
A
(Note 2)
50
TJ, TSTG
V
24
Peak Diode Recovery dv/dt
Power Dissipation
Unit
V
35
- Continuous (TC = 100oC)
PD
TL
FCB110N65F
650
- Derate Above 25oC
V/ns
357
W
2.86
W/oC
-55 to +150
o
C
300
o
C
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
FCB110N65F
Thermal Resistance, Junction to Case
0.35
Thermal Resistance, Junction to Ambient (Mimimum Pad of 2-oz copper), Max.
2
Thermal Resistance, Junction to Ambient (1 in Pad of 2-oz copper), Max.
©2015 Fairchild Semiconductor Corporation
FCB110N65F Rev. 1.1
Unit
1
62.5
o
C/W
40
www.fairchildsemi.com
FCB110N65F — N-Channel SuperFET® II FRFET® MOSFET
August 2016
Part Number
FCB110N65F
Top Mark
FCB110N65F
Package
D2-PAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
24 mm
Tape Width
800 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ID = 10 mA, VGS = 0 V, TJ = 25°C
650
-
-
V
ID = 10 mA, VGS = 0 V, TJ = 150°C
700
-
-
V
-
0.72
-
V/oC
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ΔBVDSS / ΔTJ Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 10 mA, Referenced to
25oC
VDS = 650 V, VGS = 0 V
-
-
10
VDS = 520 V, VGS = 0 V, TC = 125oC
-
110
-
VGS = ±20 V, VDS = 0 V
-
-
±100
μA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 3.5 mA
3
-
5
V
Static Drain to Source On Resistance
-
96
110
mΩ
gFS
Forward Transconductance
VGS = 10 V, ID = 17.5 A
VDS = 20 V, ID = 17.5 A
-
30
-
S
Dynamic Characteristics
-
3680
4895
pF
-
110
145
pF
-
0.65
-
pF
-
65
-
pF
VDS = 0 V to 400 V, VGS = 0 V
-
464
-
pF
VDS = 380 V, ID = 17.5 A,
VGS = 10 V
-
98
145
nC
-
20
-
nC
-
43
-
nC
-
0.7
-
Ω
-
31
72
ns
-
21
52
ns
-
89
188
ns
-
5.7
21
ns
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS = 380 V, VGS = 0 V, f = 1 MHz
Coss eff.
Effective Output Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance
VDS = 100 V, VGS = 0 V,
f = 1 MHz
(Note 4)
f = 1 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 380 V, ID = 17.5 A,
VGS = 10 V, Rg = 4.7 Ω
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
35
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
100
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 17.5 A
-
-
1.4
V
trr
Reverse Recovery Time
-
133
-
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 17.5 A,
dIF/dt = 100 A/μs
-
0.67
-
μC
Notes:
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 8 A, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 17.5 A, di/dt ≤ 200 A/μs, VDD ≤ 380 V, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
©2015 Fairchild Semiconductor Corporation
FCB110N65F Rev. 1.1
2
www.fairchildsemi.com
FCB110N65F — N-Channel SuperFET® II FRFET® MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
200
VGS = 10.0V
8.0V
100
7.0V
6.5V
6.0V
5.5V
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
100
ID, Drain Current[A]
ID, Drain Current[A]
200
10
o
150 C
10
o
25 C
o
*Notes:
1. 250μs Pulse Test
-55 C
o
2. TC = 25 C
1
0.3
1
10
VDS, Drain-Source Voltage[V]
1
20
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
4
5
6
7
VGS, Gate-Source Voltage[V]
200
100
IS, Reverse Drain Current [A]
0.20
0.15
VGS = 10V
0.10
VGS = 20V
10
o
150 C
1
o
25 C
0.1
0.01
*Notes:
1. VGS = 0V
o
*Note: TC = 25 C
0.05
0
20
40
60
ID, Drain Current [A]
80
0.001
0.0
100
Figure 5. Capacitance Characteristics
Capacitances [pF]
VGS, Gate-Source Voltage [V]
10
10000
Ciss
1000
Coss
100
*Note:
1. VGS = 0V
2. f = 1MHz
10
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
0.1
0.1
1
10
100
VDS, Drain-Source Voltage [V]
©2015 Fairchild Semiconductor Corporation
FCB110N65F Rev. 1.1
2. 250μs Pulse Test
0.3
0.6
0.9
1.2
1.5
VSD, Body Diode Forward Voltage [V]
1.8
Figure 6. Gate Charge Characteristics
100000
1
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
0.25
RDS(ON) [Ω],
Drain-Source On-Resistance
3
VDS = 130V
8
3
VDS = 325V
VDS = 520V
6
4
2
0
660
*Note: ID = 17.5A
0
20
40
60
80
Qg, Total Gate Charge [nC]
100
www.fairchildsemi.com
FCB110N65F — N-Channel SuperFET® II FRFET® MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2.5
1.10
*Notes:
1. VGS = 0V
2. ID = 10mA
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.15
1.05
1.00
0.95
0.90
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
2.0
1.5
1.0
0.5
-100
200
Figure 9. Maximum Safe Operating Area
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
40
300
100
10μs
10
ID, Drain Current [A]
100μs
ID, Drain Current [A]
*Notes:
1. VGS = 10V
2. ID = 17.5A
1ms
DC
1
Operation in This Area
is Limited by R DS(on)
*Notes:
o
1. TC = 25 C
0.1
30
20
10
o
2. TJ = 150 C
3. Single Pulse
0.01
0.1
1
10
100
VDS, Drain-Source Voltage [V]
0
25
1000
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 11. Eoss vs. Drain to Source Voltage
Switching Capability
20
EOSS, [μJ]
16
12
8
4
0
0
132
264
396
528
VDS, Drain to Source Voltage [V]
©2015 Fairchild Semiconductor Corporation
FCB110N65F Rev. 1.1
660
4
www.fairchildsemi.com
FCB110N65F — N-Channel SuperFET® II FRFET® MOSFET
Typical Performance Characteristics (Continued)
FCB110N65F — N-Channel SuperFET® II FRFET® MOSFET
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
o
ZθJC(t), Thermal Response [ C/W]
1
0.5
0.1
0.2
PDM
0.1
t1
0.05
0.01
0.02
o
1. ZθJC(t) = 0.35 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.001
-5
10
©2015 Fairchild Semiconductor Corporation
FCB110N65F Rev. 1.1
t2
*Notes:
0.01
-4
10
-3
-2
10
10
t1, Rectangular Pulse Duration [sec]
5
-1
10
1
www.fairchildsemi.com
FCB110N65F — N-Channel SuperFET® II FRFET® MOSFET
IG = const.
Figure 13. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
VDD
VGS
VGS
DUT
V
10V
GS
90%
10%
td(on)
tr
t on
td(off)
tf
t off
Figure 14. Resistive Switching Test Circuit & Waveforms
VGS
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
©2015 Fairchild Semiconductor Corporation
FCB110N65F Rev. 1.1
6
www.fairchildsemi.com
FCB110N65F — N-Channel SuperFET® II FRFET® MOSFET
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2015 Fairchild Semiconductor Corporation
FCB110N65F Rev. 1.1
7
www.fairchildsemi.com
10.67
9.65
10.67
-A1.68
1.00
4
4
9.45
9.65
8.38
10.00
1.78 MAX
2
3
1
1.78
1.14
0.99
0.51
(2.12)
2
0.25 MAX
PLASTIC BODY
STUB
3.80
3
1
1.05
0.25
M
5.08
B AM
LAND PATTERN RECOMMENDATION
UNLESS NOTED, ALL DIMS TYPICAL
5.08
FRONT VIEW - DIODE PRODUCTS VERSION
ALTERNATIVE SUPPLIER DETAIL
6.22 MIN
4
-B-
4.83
4.06
1.65
1.14
4
6.86 MIN
15.88
14.61
SEE
DETAIL A
2
2
3
1
3
1
BACK VIEW - DIODE PRODUCTS VERSION
ALTERNATIVE SUPPLIER DETAIL
GAGE PLANE
0.74
0.33
0.25
2.79
1.78
0.25 MAX
(5.38)
SEATING
PLANE
SCALE: 2X
0.10
NOTES: UNLESS OTHERWISE SPECIFIED
A) ALL DIMENSIONS ARE IN MILLIMETERS.
B) REFERENCE JEDEC, TO-263, VARIATION AB.
C) DIMENSIONING AND TOLERANCING PER
DIMENSIONING AND TOLERANCING PER
ASME Y14.5 - 2009.
D) LOCATION OF THE PIN HOLE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE).
E) LANDPATTERN RECOMMENDATION PER IPC
TO254P1524X482-3N
B
F) FILENAME: TO263A02REV8
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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