FCB290N80

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FCB290N80 N-Channel SuperFET® II MOSFET 800 V, 17 A, 0.29  Features Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. • RDS(on) = 0.259 Typ.) • Ultra Low Gate Charge (Typ. Qg = 58 nC) • Low Eoss (Typ. 5.4 uJ @ 400V) • Low Effective Output Capacitance (Typ. Coss(eff.) = 240 pF) • 100% Avalanche Tested • RoHS Compliant Applications • AC - DC Power Supply • LED Lighting D D G S G D2-PAK  Absolute Maximum Ratings TC = 25oC unless otherwise noted. S Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current IDM Drain Current (Note 1) 42 A EAS Single Pulsed Avalanche Energy (Note 2) 882 mJ IAR Avalanche Current (Note 1) 3.4 A EAR Repetitive Avalanche Energy (Note 1) 2.12 mJ dv/dt Parameter FCB290N80 800 - DC ±20 - AC (f > 1 Hz) - Continuous (TC = 25oC) 17 - Continuous (TC = 100oC) - Pulsed 10.8 MOSFET dv/dt 100 Peak Diode Recovery dv/dt (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL ±30 - Derate Above 25oC 20 Unit V V A V/ns 212 W 1.7 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol RJC RJA Parameter FCB290N80 Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 2 Thermal Resistance, Junction to Ambient (1 in Pad of 2-oz Copper), Max. ©2014 Fairchild Semiconductor Corporation FCB290N80 Rev. 1.0 Unit 0.59 1 62.5 oC/W 40 www.fairchildsemi.com FCB290N80 — N-Channel SuperFET® II MOSFET March 2015 Part Number FCB290N80 Top Mark FCB290N80 Package D2-PAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 24 mm Quantity 800 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 800 - - V - 0.85 - V/oC Off Characteristics BVDSS BVDSS / TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current VGS = 0 V, ID = 1 mA, TJ = 25C o ID = 1 mA, Referenced to 25 C VDS = 800 V, VGS = 0 V - - 25 VDS = 640 V, VGS = 0 V,TC = 125oC - - 250 VGS = ±20 V, VDS = 0 V - - ±10 2.5 - 4.5 V - 0.259 0.290  - 20 - S A A On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 1.7 mA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10 V, ID = 8.5 A VDS = 20 V, ID = 8.5 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss VDS = 100 V, VGS = 0 V, f = 1 MHz - 2410 3205 pF - 75 100 pF - 0.36 - pF Output Capacitance VDS = 480 V, VGS = 0 V, f = 1 MHz - 35 - pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 480 V, VGS = 0 V - 240 - pF Qg(tot) Total Gate Charge at 10V 58 75 nC Gate to Source Gate Charge VDS = 640 V, ID = 17 A, VGS = 10 V - Qgs - 11 - nC Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance (Note 4) - 22 - nC f = 1 MHz - 0.75 -  - 22 54 ns VDD = 400 V, ID = 17 A, VGS = 10 V, Rg = 4.7  - 14 38 ns - 61 132 ns - 2.6 15 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 17 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 42 A VGS = 0 V, ISD = 17 A - - 1.2 V VGS = 0 V, ISD = 17 A, dIF/dt = 100 A/s - 511 - ns - 12 - C VSD Drain to Source Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Notes: 1. Repetitive rating: pulse width limited by maximum junction temperature. 2. IAS = 3.4 A, RG = 25 , starting TJ = 25C 3. ISD  17 A, di/dt  200 A/s, VDD  BVDSS, starting TJ = 25C 4. Essentially independent of operating temperature typical characteristic. ©2014 Fairchild Semiconductor Corporation FCB290N80 Rev. 1.0 2 www.fairchildsemi.com FCB290N80 — N-Channel SuperFET® II MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics 100 100 VGS = 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V ID, Drain Current[A] ID, Drain Current[A] Figure 2. Transfer Characteristics 10 10 o 150 C o -55 C o 25 C 1 *Notes: 1. 250s Pulse Test *Notes: 1. VDS = 20V 2. 250s Pulse Test o 2. TC = 25 C 0.1 1 1 10 VDS, Drain-Source Voltage[V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3 4 5 6 VGS, Gate-Source Voltage[V] 7 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.6 100 IS, Reverse Drain Current [A] RDS(ON) [], Drain-Source On-Resistance 2 0.4 VGS = 10V VGS = 20V *Notes: 1. VGS = 0V 2. 250s Pulse Test 10 o 150 C 1 o 25 C o 0.2 *Note: TC = 25 C 0 10 20 30 ID, Drain Current [A] 40 0.1 0.0 50 Figure 5. Capacitance Characteristics 10.0 VGS, Gate-Source Voltage [V] Capacitances [pF] 10000 Ciss 1000 Coss 100 1 1.4 Figure 6. Gate Charge Characteristics 100000 10 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] *Note: 1. VGS = 0V 2. f = 1MHz Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 0.1 0.1 1 10 100 VDS, Drain-Source Voltage [V] ©2014 Fairchild Semiconductor Corporation FCB290N80 Rev. 1.0 VDS = 160V 7.5 VDS = 400V VDS = 640V 5.0 2.5 0.0 1000 3 *Note: ID = 17A 0 14 28 42 56 Qg, Total Gate Charge [nC] 70 www.fairchildsemi.com FCB290N80 — N-Channel SuperFET® II MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 *Notes: 1. VGS = 0V 2. ID = 1mA 1.1 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.0 0.9 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 0.5 0.0 -100 200 Figure 9. Maximum Safe Operating Area -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 20 200 100 10s 16 ID, Drain Current [A] ID, Drain Current [A] 2.5 *Notes: 1. VGS = 10V 2. ID = 8.5A 100s 10 1ms 1 Operation in This Area is Limited by R DS(on) DC *Notes: 0.1 12 8 4 o 1. TC = 25 C o 0.01 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Eoss vs. Drain to Source Voltage 15 EOSS, [J] 12 9 6 3 0 0 160 320 480 640 VDS, Drain to Source Voltage [V] ©2014 Fairchild Semiconductor Corporation FCB290N80 Rev. 1.0 800 4 www.fairchildsemi.com FCB290N80 — N-Channel SuperFET® II MOSFET Typical Performance Characteristics (Continued) FCB290N80 — N-Channel SuperFET® II MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve o ZJC(t), Thermal Response [ C/W] 1 0.2 0.1 0.1 PDM 0.05 0.02 0.01 0.01 t1 t2 *Notes: Single pulse o 0.001 1E-3 -5 10 ©2014 Fairchild Semiconductor Corporation FCB290N80 Rev. 1.0 1. ZJC(t) = 0.59 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) -4 10 -3 -2 -1 10 10 10 t1, Rectangular Pulse Duration [sec] 5 0 10 1 10 www.fairchildsemi.com FCB290N80 — N-Channel SuperFET® II MOSFET IG = const. Figure 13. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 14. Resistive Switching Test Circuit & Waveforms VGS Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms ©2014 Fairchild Semiconductor Corporation FCB290N80 Rev. 1.0 6 www.fairchildsemi.com FCB290N80 — N-Channel SuperFET® II MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2014 Fairchild Semiconductor Corporation FCB290N80 Rev. 1.0 7 www.fairchildsemi.com 10.67 9.65 10.67 -A1.68 1.00 4 4 9.45 9.65 8.38 10.00 1.78 MAX 2 3 1 1.78 1.14 0.99 0.51 (2.12) 2 0.25 MAX PLASTIC BODY STUB 3.80 3 1 1.05 0.25 M 5.08 B AM LAND PATTERN RECOMMENDATION UNLESS NOTED, ALL DIMS TYPICAL 5.08 FRONT VIEW - DIODE PRODUCTS VERSION ALTERNATIVE SUPPLIER DETAIL 6.22 MIN 4 -B- 4.83 4.06 1.65 1.14 4 6.86 MIN 15.88 14.61 SEE DETAIL A 2 2 3 1 3 1 BACK VIEW - DIODE PRODUCTS VERSION ALTERNATIVE SUPPLIER DETAIL GAGE PLANE 0.74 0.33 0.25 2.79 1.78 0.25 MAX (5.38) SEATING PLANE SCALE: 2X 0.10 NOTES: UNLESS OTHERWISE SPECIFIED A) ALL DIMENSIONS ARE IN MILLIMETERS. B) REFERENCE JEDEC, TO-263, VARIATION AB. C) DIMENSIONING AND TOLERANCING PER DIMENSIONING AND TOLERANCING PER ASME Y14.5 - 2009. D) LOCATION OF THE PIN HOLE MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF THE PACKAGE). E) LANDPATTERN RECOMMENDATION PER IPC TO254P1524X482-3N B F) FILENAME: TO263A02REV8 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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