FCD360N65S3R0

FCD360N65S3R0 MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 10 A, 360 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. www.onsemi.com VDSS RDS(ON) MAX ID MAX 650 V 360 mW @ 10 V 10 A D Features • • • • • • 700 V @ TJ = 150_C Typ. RDS(on) = 310 mW Ultra Low Gate Charge (Typ. Qg = 18 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 173 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant Applications • • • • G S D G Computing / Display Power Supplies Telecom / Server Power Supplies Industrial Power Supplies Lighting / Charger / Adapter S D−PAK TO−252 CASE 369AS MARKING DIAGRAM $Y&Z&3&K FCD360 N65S3R0 $Y &Z &3 &K FCD360N65S3R0 = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 August, 2019 − Rev. 5 1 Publication Order Number: FCD360N65S3R0/D FCD360N65S3R0 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current: Value Unit 650 V − DC ±30 V − AC (f > 1 Hz) ±30 V − Continuous (TC = 25°C) 10 A − Continuous (TC = 100°C) 6 − Pulsed (Note 1) IDM Drain Current: 25 A EAS Single Pulsed Avalanche Energy (Note 2) 40 mJ IAS Avalanche Current (Note 2) 2.1 A EAR Repetitive Avalanche Energy (Note 1) 0.83 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD Power Dissipation (TC = 25°C) 83 W 0.67 W/°C −55 to +150 °C 300 °C Derate Above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 2.1 A, RG = 25 W, starting TJ = 25 _C. 3. ISD ≤ 5 A, di/dt ≤ 200 A/mS, VDD ≤ 400 V, starting TJ = 25 _C. THERMAL CHARACTERISTICS Symbol Parameter Value Unit _C/W RqJC Thermal Resistance, Junction to Case, Max. 1.5 RqJA Thermal Resistance, Junction to Ambient, Max. Note 4) 52 4. Device on 1 in2 pad 2 oz copper pad on 1.5 x 1.5 in. board of FR−4 material. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity† FCD360N65S3R0 FCD360N65S3R0 TO−252 Tape and Reel 330 mm 16 mm 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 FCD360N65S3R0 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit VGS = 0 V, ID = 1 mA, TJ = 25_C 650 − − V VGS = 0 V, ID = 1 mA, TJ = 150_C 700 − − V OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS/DTJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25_C − 0.68 − V/_C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V − − 1 mA VDS = 520 V, TC = 125_C − 0.58 − IGSS Gate to Body Leakage Current VGS = ±30 V, VDS = 0 V − − ±100 nA 2.5 − 4.5 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 0.2 mA RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 5 A − 310 360 mW Forward Transconductance VDS = 20 V, ID = 5 A − 6 − S VDS = 400 V, VGS = 0 V, f = 1 MHz − 730 − pF − 15 − pF gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 173 − pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 26 − pF Total Gate Charge at 10V VDS = 400 V, ID = 5 A, VGS = 10 V (Note 5) − 18 − nC − 4.3 − nC Qg(tot) Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance − 7.6 − nC f = 1 MHz − 1 − W VDD = 400 V, ID = 5 A, VGS = 10 V, Rg = 4.7 W (Note 5) − 12 − ns − 11 − ns SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time − 34 − ns Turn-Off Fall Time − 10 − ns Maximum Continuous Source to Drain Diode Forward Current − − 10 A ISM Maximum Pulsed Source to Drain Diode Forward Current − − 25 A VSD Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 5 A − − 1.2 V trr Reverse Recovery Time − 241 − ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 5 A, dIF/dt = 100 A/ms − 2.4 − mC tf SOURCE-DRAIN DIODE CHARACTERISTICS IS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 FCD360N65S3R0 TYPICAL PERFORMANCE CHARACTERISTICS 50 VGS = 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V 10 ID, Drain Current[A] ID, Drain Current[A] 50 1 *Notes: 1. VDS = 20V 2. 250 ms Pulse Test 10 o 150 C o 25 C 1 o −55 C *Notes: 1. 250 ms Pulse Test o 2. TC = 25 C 0.1 0.2 1 10 VDS, Drain−Source Voltage[V] 0.1 20 2 RDS(ON), Drain−Source On−Resistance [W] 0.2 10 15 20 o 1 o 25 C 0.1 o −55 C 0.01 0.001 0.0 25 0.5 1.0 1.5 ID, Drain Current [A] VSD, Body Diode Forward Voltage [V] Figure 3. On−Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 10 VGS, Gate−Source Voltage [V] 10000 Capacitances [pF] 9 150 C 100000 Ciss 1000 100 Coss *Note: 1. VGS = 0V 2. f = 1MHz 10 1 8 2. 250 ms Pulse Test 10 IS, Reverse Drain Current [A] VGS = 20V 0.3 5 7 *Notes: 1. VGS = 0V VGS = 10V 0 6 100 o 0.5 0.1 5 Figure 2. Transfer Characteristics *Note: TC = 25 C 0.4 4 VGS, Gate−Source Voltage[V] Figure 1. On−Region Characteristics 0.6 3 Ciss = C gs + Cgd (C ds = shorted) Coss = C ds + Cgd Crss = Cgd 0.1 0.1 1 10 100 VDS, Drain−Source Voltage [V] Crss 8 VDS = 130V VDS = 400V 6 4 2 0 1000 *Note: ID = 5A 0 5 10 15 20 Qg, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics Figure 5. Capacitance Characteristics www.onsemi.com 4 FCD360N65S3R0 TYPICAL PERFORMANCE CHARACTERISTICS(Continued) 3.0 1.1 *Notes: 1. VGS = 0V 2. ID = 10mA RDS(on), [Normalized] Drain−Source On−Resistance BVDSS, [Normalized] Drain−Source Breakdown Voltage 1.2 1.0 0.9 0.8 −50 0 50 100 o 2.0 1.5 1.0 0.5 0.0 150 TJ, Junction Temperature [ C] 2.5 Figure 7. Breakdown Voltage Variation vs. Temperature 100 ms ID, Drain Current [A] ID, Drain Current [A] 10 10 ms 1ms 10ms 1 Operation in This Area is Limited by R DS(on) DC *Notes: o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse 1 10 100 4 3 2 1 260 390 520 25 50 75 100 125 Figure 10. Maximum Drain Current vs. Case Temperature 5 EOSS [mJ] 4 TC, Case Temperature [ oC] Figure 9. Maximum Safe Operating Area 130 6 0 1000 VDS, Drain−Source Voltage [V] 0 8 2 o 0 0 50 100 150 o TJ, Junction Temperature [ C] 12 10 0.01 −50 Figure 8. On−Resistance Variation vs. Temperature 100 0.1 *Notes: 1. VGS = 10V 2. ID = 5A 650 VDS, Drain to Source Voltage [V] Figure 11. Eoss vs. Drain to Source Voltage www.onsemi.com 5 150 FCD360N65S3R0 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 DUTYCYCLE−DESCENDING CYCLE−DESCENDING ORDER DUTY ORDER 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 PDM tt1 t2 t2 0.01 NOTES: ZqJC (t) = r (t) x RqJC RqJC = 1.5 5C/W Peak TJ = PDM x ZqJC (t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 −5 10 −4 10 −3 10 −2 −1 10 10 0 10 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Transient Thermal Response Curve www.onsemi.com 6 10 1 2 10 FCD360N65S3R0 VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 13. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr tf td(off) ton toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time FCD360N65S3R0 + DUT VSD − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13810G DPAK3 (TO−252 3 LD) DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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