FCD5N60-F085

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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FCD5N60-F085 N-Channel SuperFET® MOSFET FCD5N60-F085 N-Channel SuperFET® MOSFET 600 V, 4.6 A, 1.1 Ω Features „ 600V, 4.6A, typ. Rds(on)=860mΩ@VGS=10V D „ Ultra Low Gate Charge (Typ. Qg = 16 nC) „ UIS Capability „ RoHS Compliant D G „ Qualified to AEC Q101 Applications G S „ Automotive On Board Charger D-PAK TO-252 (TO-252) „ Automotive DC/DC Converter for HEV S Description SuperFETTM is ON Semiconductor proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is suitable for various automotive DC/DC power conversion. MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol VDSS Drain-to-Source Voltage VGS ID EAS PD Parameter Ratings 600 Units V ±30 V Gate-to-Source Voltage Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 4.6 Pulsed Drain Current TC = 25°C See Figure 4 Single Pulse Avalanche Energy (Note 1) 29 Power Dissipation Derate Above 25oC TJ, TSTG Operating and Storage Temperature RθJC Thermal Resistance, Junction to Case RθJA Maximum Thermal Resistance, Junction to Ambient A mJ 54 W 1.56 W/oC -55 to + 150 oC 2.3 oC/W 83 oC/W (Note 2) Notes: 1: Starting TJ = 25°C, L = 10mH, IAS = 2.4A, VDD = 100V during inductor charging and VDD = 0V during time in avalanche. 2: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJAis determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. Package Marking and Ordering Information Device Marking FCD5N60 Device FCD5N60-F085 ©2015 Semiconductor Components Industries, LLC. August-2017, Rev. 2 Package D-PAK(TO-252) Reel Size 13” Tape Width 16mm Quantity 2500units Publication Order Number: FCD5N60-F085/D Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current ID = 250μA, VGS = 0V 600 - - V - - 1 μA - - 10 μA - - ±100 nA VDS=600V, TJ = 25oC VGS = 0V TJ = 150oC (Note 4) VGS = ±30V On Characteristics VGS(th) RDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250μA ID = 4.6A, VGS= 10V 3.0 - 5.0 V - 0.86 1.1 Ω - 2.5 3.2 Ω TJ = 25oC TJ = 150oC (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance f = 1MHz Qg(ToT) Total Gate Charge VGS = 0 to 10V Qg(th) Threshold Gate Charge VGS = 0 to 2V - 1.0 - nC Qgs Gate-to-Source Gate Charge - 3.2 - nC Qgd Gate-to-Drain “Miller“ Charge - 7.6 - nC ns VDS = 25V, VGS = 0V, f = 1MHz VDD = 480V ID = 4.6A - 570 - pF - 280 - pF - 20 - pF - 1.9 - Ω - 16 21 nC Switching Characteristics ton Turn-On Time - - 84 td(on) Turn-On Delay - 18 - ns tr Rise Time - 19 - ns td(off) Turn-Off Delay - 48 - ns tf Fall Time - 13 - ns toff Turn-Off Time - - 178 ns VDD = 300V, ID = 4.6A, VGS = 10V, RGEN = 25Ω Drain-Source Diode Characteristics VSD Source-to-Drain Diode Voltage ISD = 4.6A, VGS = 0V - - 1.25 V trr Reverse-Recovery Time - 190 250 ns Qrr Reverse-Recovery Charge VDD = 480V, IF = 4.6A, dISD/dt = 100A/μs - 1.7 2.2 μC Note: 4: The maximum value is specified by design at TJ = 150°C. Product is not tested to this condition in production. www.onsemi.com 2 FCD5N60-F085 N-Channel SuperFET® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted. 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 8 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 TC, CASE TEMPERATURE(oC) 6 4 2 0 150 Figure 1. Normalized Power Dissipation vs. Case Temperature VGS = 10V CURRENT LIMITED BY PACKAGE 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 2. Maximum Continuous Drain Current vs. Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 0.1 DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 100 TC = 25oC VGS = 10V FOR TEMPERATURES IDM, PEAK CURRENT (A) ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 150 - TC I = I2 125 10 SINGLE PULSE 1 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability www.onsemi.com 3 0 10 1 10 FCD5N603F085 N-Channel SuperFET® MOSFET Typical Characteristics 10 10us 1 100us 0.1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.01 1 1ms 10ms 100ms SINGLE PULSE TJ = MAX RATED TC = 25oC VGS, GATE TO SOURCE VOLTAGE(V) ID, DRAIN CURRENT (A) 100 IS, REVERSE DRAIN CURRENT (A) 16 ID, DRAIN CURRENT (A) VDD = 240V VDD = 20V 12 8 TJ = 25oC 4 TJ = 150oC 3 TJ = -55oC 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 4 2 0 0 8 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 6 4 TJ = 150 oC 1 0.4 TJ = 25 oC 0.6 0.8 1.0 1.2 Figure 8. Forward Diode Characteristics VGS 8 VGS = 0 V 10 ID, DRAIN CURRENT (A) 10 16 VSD, BODY DIODE FORWARD VOLTAGE (V) 80μs PULSE WIDTH Tj=25oC 12 4 8 12 Qg, GATE CHARGE(nC) 0.1 0.2 10 Figure 7. Transfer Characteristics 14 VDD = 360V 6 20 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX VDD =300V Figure 6. Gate Charge vs. Gate to Source Voltage 20 ID, DRAIN CURRENT (A) ID = 4.6A 8 10 100 1000 2000 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 5. Forward Bias Safe Operating Area 0 10 2 80μs PULSE WIDTH Tj=150oC 7 6 5 VGS 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 4 3 2 1 0 0 0 4 8 12 16 VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 9. Saturation Characteristics 0 4 8 12 16 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Saturation Characteristics www.onsemi.com 4 20 FCD5N60-F085 N-Channel SuperFET® MOSFET Typical Characteristics ID = 4.6A 5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (Ω) 6 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 4 3 TJ = 150oC 2 1 TJ = 25oC 0 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 11. RDSON vs. Gate Voltage 2.5 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 2.0 1.5 1.0 ID = 4.6A VGS = 10V 0.5 0.0 -80 -40 0 40 80 120 TJ, JUNCTION TEMPERATURE(oC) 1.2 VGS = VDS ID = 250μA 1.2 ID = 1mA 1.1 1.0 1.0 0.8 0.9 0.6 0.4 -80 -40 0 40 80 120 TJ, JUNCTION TEMPERATURE(oC) 0.8 -80 160 Figure 13. Normalized Gate Threshold Voltage vs. Temperature -40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC) 10000 1000 Ciss 100 Coss 10 f = 1MHz VGS = 0V 1 0.1 160 Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature Figure 16. CAPACITANCE (pF) 160 Figure 12. Normalized RDSON vs. Junction Temperature NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.4 3.0 Crss 1 10 100 1000 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 15. Capacitance vs. Drain to Source Voltage www.onsemi.com 5 FCD5N60-F085 N-Channel SuperFET® MOSFET Typical Characteristics FCD5N60-F085 N-Channel SuperFET® MOSFET ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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