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FCD850N80Z / FCU850N80Z
N-Channel SuperFET® II MOSFET
800 V, 6 A, 850 m
Features
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy. In
addition, internal gate-source ESD diode allows to withstand
over 2kV HBM surge stress.Consequently, SuperFET II
MOSFET is very suitable for the switching power applications
such as Audio, Laptop adapter, Lighting, ATX power and
industrial power applications.
• Typ. RDS(on) = 710 mTyp.)
• Ultra Low Gate Charge (Typ. Qg = 22 nC)
• Low Eoss (Typ. 2.3 uJ @ 400V)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 106 pF)
• 100% Avalanche Tested
• RoHS Compliant
• ESD Improved Capability
Applications
• AC - DC Power Supply
• LED Lighting
D
D
G
S
D-PAK
I-PAK
G
D
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
S
FCD850N80Z
FCU850N80Z
800
Parameter
Drain to Source Voltage
- DC
Unit
V
±20
VGSS
Gate to Source Voltage
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
1.2
A
EAR
Repetitive Avalanche Energy
(Note 1)
0.284
mJ
dv/dt
- AC
(f > 1 Hz)
- Continuous (TC = 25oC)
6
- Continuous (TC = 100oC)
- Pulsed
(Note 1)
18
A
(Note 2)
114
mJ
100
(Note 3)
(TC = 25oC)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
TL
A
3.8
MOSFET dv/dt
Peak Diode Recovery dv/dt
V
±30
- Derate Above 25oC
20
V/ns
75
W
0.6
W/oC
o
-55 to +150
C
300
oC
FCD850N80Z
FCU850N80Z
Unit
Thermal Characteristics
Symbol
Parameter
RJC
Thermal Resistance, Junction to Case, Max.
1.65
RJA
Thermal Resistance, Junction to Ambient, Max.
100
©2014 Fairchild Semiconductor Corporation
FCD850N80Z / FCU850N80Z Rev. C0
1
o
C/W
www.fairchildsemi.com
FCD850N80Z / FCU850N80Z — N-Channel SuperFET® II MOSFET
October 2014
Part Number
FCD850N80Z
Top Mark
FCD850N80Z
Package
DPAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
FCU850N80Z
FCU850N80Z
IPAK
Tube
NA
NA
75 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
800
-
-
V
-
0.8
-
V/oC
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
VGS = 0 V, ID = 1 mA, TJ = 25C
o
ID = 1 mA, Referenced to 25 C
VDS = 800 V, VGS = 0 V
-
-
25
VDS = 640 V, VGS = 0 V, TC = 125oC
-
-
250
VGS = ±20 V, VDS = 0 V
-
-
±10
2.5
-
4.5
V
-
710
850
m
-
3.5
-
S
A
A
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 0.6 mA
Static Drain to Source On Resistance
gFS
Forward Transconductance
VGS = 10 V, ID = 3 A
VDS = 20 V, ID = 3 A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS = 480 V, VGS = 0 V, f = 1 MHz
Coss(eff.)
Effective Output Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance
-
990
1315
pF
-
28
37
pF
-
0.74
-
pF
-
15
-
pF
VDS = 0 V to 480 V, VGS = 0 V
-
106
-
pF
VDS = 640 V, ID = 6 A,
VGS = 10 V
-
22
29
nC
-
5
-
nC
VDS = 100 V, VGS = 0 V,
f = 1 MHz
(Note 4)
-
8.6
-
nC
f = 1 MHz
-
2.4
-
-
16
42
ns
VDD = 400 V, ID = 6 A,
VGS = 10 V, Rg = 4.7
-
10
30
ns
-
40
90
ns
-
4.5
19
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
6
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
18
A
VSD
Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 6 A
-
-
1.2
V
trr
Reverse Recovery Time
-
318
-
ns
Qrr
Reverse Recovery Charge
-
4.5
-
C
VGS = 0 V, ISD = 6 A,
dIF/dt = 100 A/s
Notes:
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 1.2 A, VDD 50 V, RG = 25 , Starting TJ = 25C
3. ISD 6 A, di/dt 200 A/s, VDD BVDSS, Starting TJ = 25C
4. Essentially independent of operating temperature typical characteristics.
©2014 Fairchild Semiconductor Corporation
FCD850N80Z / FCU850N80Z Rev. C0
2
www.fairchildsemi.com
FCD850N80Z / FCU850N80Z — N-Channel SuperFET® II MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
20
Figure 2. Transfer Characteristics
20
VGS = 20.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
10
ID, Drain Current[A]
ID, Drain Current[A]
10
*Notes:
1. VDS = 20V
2. 250s Pulse Test
o
150 C
o
25 C
o
*Notes:
1. 250s Pulse Test
-55 C
o
1
2. TC = 25 C
1
10
VDS, Drain-Source Voltage[V]
1
20
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
50
o
*Note: TC = 25 C
1.25
1.00
VGS = 10V
0.75
VGS = 20V
0.50
0
3
6
9
12
ID, Drain Current [A]
15
Capacitances [pF]
VGS, Gate-Source Voltage [V]
Ciss
100
Coss
1
2. 250s Pulse Test
o
150 C
o
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
0.1
0.1
1
10
100
VDS, Drain-Source Voltage [V]
©2014 Fairchild Semiconductor Corporation
FCD850N80Z / FCU850N80Z Rev. C0
25 C
1
10
*Note:
1. VGS = 0V
2. f = 1MHz
*Notes:
1. VGS = 0V
0.4
0.8
1.2
VSD, Body Diode Forward Voltage [V]
1.6
Figure 6. Gate Charge Characteristics
10000
10
7
10
0.1
18
Figure 5. Capacitance Characteristics
1000
5
6
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
IS, Reverse Drain Current [A]
RDS(ON) [],
Drain-Source On-Resistance
1.50
4
3
VDS = 160V
8
VDS = 400V
VDS = 640V
6
4
2
0
1000
*Note: ID = 6A
0
6
12
18
Qg, Total Gate Charge [nC]
24
www.fairchildsemi.com
FCD850N80Z / FCU850N80Z — N-Channel SuperFET® II MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
1.2
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
*Notes:
1. VGS = 0V
2. ID = 1mA
1.1
1.0
0.9
0.8
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
2.4
*Notes:
1. VGS = 10V
2. ID = 3A
1.8
1.2
0.6
0.0
-100
200
Figure 9. Maximum Safe Operating Area
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
6
100
ID, Drain Current [A]
10s
ID, Drain Current [A]
10
100s
1ms
1
Operation in This Area
is Limited by R DS(on)
DC
*Notes:
0.1
4
2
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0.01
1
10
100
VDS, Drain-Source Voltage [V]
0
25
1000
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 11. Eoss vs. Drain to Source Voltage
6
EOSS, [J]
4
2
0
0
200
400
600
VDS, Drain to Source Voltage [V]
©2014 Fairchild Semiconductor Corporation
FCD850N80Z / FCU850N80Z Rev. C0
800
4
www.fairchildsemi.com
FCD850N80Z / FCU850N80Z — N-Channel SuperFET® II MOSFET
Typical Performance Characteristics (Continued)
FCD850N80Z / FCU850N80Z — N-Channel SuperFET® II MOSFET
Typical Performance Characteristics (Continued)
2
1
o
ZJC(t), Thermal Response [ C/W]
Figure 12. Transient Thermal Response Curve
0.5
0.2
0.1
0.1
PDM
0.05
t1
0.02
0.01
Single pulse
0.01
-5
10
©2014 Fairchild Semiconductor Corporation
FCD850N80Z / FCU850N80Z Rev. C0
t2
*Notes:
o
1. ZJC(t) = 1.65 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
-4
10
-3
-2
10
10
t1, Rectangular Pulse Duration [sec]
5
-1
10
1
www.fairchildsemi.com
FCD850N80Z / FCU850N80Z — N-Channel SuperFET® II MOSFET
IG = const.
Figure 13. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
VDD
VGS
VGS
DUT
V
10V
GS
90%
10%
td(on)
tr
t on
td(off)
tf
t off
Figure 14. Resistive Switching Test Circuit & Waveforms
VGS
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
©2014 Fairchild Semiconductor Corporation
FCD850N80Z / FCU850N80Z Rev. C0
6
www.fairchildsemi.com
FCD850N80Z / FCU850N80Z — N-Channel SuperFET® II MOSFET
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2014 Fairchild Semiconductor Corporation
FCD850N80Z / FCU850N80Z Rev. C0
7
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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