FCH029N65S3-F155

MOSFET – Power, N-Channel, SUPERFET) III, Easy Drive 650 V, 75 A, 29 mW FCH029N65S3 www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. VDSS RDS(ON) MAX ID MAX 650 V 29 mW @ 10 V 75 A D Features • • • • • • 700 V @ TJ = 150°C Typ. RDS(on) = 23.7 mW Ultra Low Gate Charge (Typ. Qg = 201 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 1615 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant G S POWER MOSFET Applications • Telecom / Server Power Supplies • Industrial Power Supplies • UPS / Solar G D S TO−247−3LD CASE 340CX MARKING DIAGRAM $Y&Z&3&K FCH 029N65S3 $Y &Z &3 &K FCH029N65S3 = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2020 June, 2020 − Rev. 0 1 Publication Order Number: FCH029N65S3/D FCH029N65S3 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current Value Unit 650 V − DC ±30 V − AC (f > 1 Hz) ±30 − Continuous (TC = 25°C) 75 − Continuous (TC = 100°C) 50.8 − Pulsed (Note 1) A IDM Drain Current 200 A EAS Single Pulsed Avalanche Energy (Note 2) 503 mJ IAS Avalanche Current (Note 2) 11.5 A EAR Repetitive Avalanche Energy (Note 1) 4.63 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD TJ, TSTG TL Power Dissipation (TC = 25°C) 463 W − Derate Above 25°C 3.7 W/°C −55 to +150 °C 300 °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse width limited by maximum junction temperature. 2. IAS = 11.5 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 37.5 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter Value Unit RqJC Thermal Resistance, Junction to Case, Max. 0.27 _C/W RqJA Thermal Resistance, Junction to Ambient, Max. 40 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FCH029N65S3−F155 FCH029N65S3 TO−247 G03 Tube N/A N/A 30 Units ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit VGS = 0 V, ID = 1 mA, TJ = 25_C 650 − − V VGS = 0 V, ID = 1 mA, TJ = 150_C 700 − − V OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS / DTJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25_C − 0.72 − V/_C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V − − 1 mA VDS = 520 V, TC = 125_C − 6.2 − VGS = ±30 V, VDS = 0 V − − ±100 nA IGSS Gate to Body Leakage Current ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 7.0 mA 2.5 − 4.5 V RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 37.5 A − 23.7 29 mW Forward Transconductance VDS = 20 V, ID = 37.5 A − 48 − S gFS www.onsemi.com 2 FCH029N65S3 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (continued) Symbol Parameter Test Conditions Min Typ Max Unit − 6340 − pF − 166 − pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance VDS = 400 V, VGS = 0 V, f = 1 MHz Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 1615 − pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 287 − pF Total Gate Charge at 10 V VDS = 400 V, ID = 37.5 A, VGS = 10 V (Note 4) − 201 − nC − 46 − nC − 81 − nC f = 1 MHz − 0.85 − W VDD = 400 V, ID = 37.5 A, VGS = 10 V, Rg = 2 W (Note 4) − 35 − ns − 49 − ns Qg(tot) Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time − 120 − ns Turn-Off Fall Time − 29.5 − ns Maximum Continuous Drain to Source Diode Forward Current − − 75 A ISM Maximum Pulsed Drain to Source Diode Forward Current − − 200 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 37.5 A − − 1.2 V trr Reverse Recovery Time − 516 − ns Qrr Reverse Recovery Charge VDD = 400 V, ISD = 37.5 A, dIF/dt = 100 A/ms − 12.2 − mC tf SOURCE-DRAIN DIODE CHARACTERISTICS IS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 FCH029N65S3 TYPICAL CHARACTERISTICS 200 8V VGS = 10 V 6.5 V 6.0 V 5.5 V 7.0 V 10 RDS(on), DRAIN−TO−SOURCE ON−RESISTANCE (W) 1 TC = 25°C 250 ms Pulse Test 0.2 10 1 200 VGS = 10 V 0.02 0.01 0 25 50 75 100 125 150 175 200 5 7 6 VGS = 0 V 250 ms Pulse Test 100 10 1 0.1 TJ = 150°C 0 0.2 TJ = 25°C TJ = −55°C 0.6 0.4 0.8 1.2 1.0 ID, DRAIN CURRENT (A) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature VGS, GATE−TO−SOURCE VOLTAGE(V) 1M 100K CAPACITANCE (pF) 4 Figure 2. Transfer Characteristics VGS = 20 V CISS 10K 1K COSS 100 0.1 3 Figure 1. On−Region Characteristics 0.03 1 TJ = −55°C 2 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.04 10 TJ = 150°C 1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.05 0 TJ = 25°C 10 0.1 20 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 VGS = 0 V 250 ms Pulse Test 100 ID, DRAIN CURRENT (A) 200 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 0.1 1 CRSS 10 100 1000 10 VDD = 130 V ID = 37.5 A VDD = 400 V 8 6 4 2 0 0 50 100 150 200 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 4 250 FCH029N65S3 BVDSS, NORMALIZED DRAIN−TO− SOURCE BREAKDOWN VOLTAGE 1.2 VGS = 0 V ID = 10 mA 1.1 1.0 0.9 0.8 −75 −50 −25 0 25 50 75 100 125 150 175 RDS(ON), NORMALIZED DRAIN−SOURCE ON−RESISTANCE TYPICAL CHARACTERISTICS 2.0 1.5 1.0 0.5 0 −75 −50 −25 50 75 100 125 150 175 Figure 8. On−Resistance Variation vs. Temperature 80 ID, DRAIN CURRENT (A) 30 ms Operation in this area is limited by RDS(on) 10 1 ms 10 ms DC 1 TC = 25°C TJ = 150°C Single Pulse 1 100 10 1000 60 40 20 0 25 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 9. Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 40 30 20 10 0 50 VDS, DRAIN−SOURCE VOLTAGE (V) 50 Eoss (mJ) 25 Figure 7. Breakdown Voltage Variation vs. Temperature 100 ms 0 0 TJ, JUNCTION TEMPERATURE (°C) 100 ID, DRAIN CURRENT (A) VGS = 10 V ID = 37.5 A 2.5 TJ, JUNCTION TEMPERATURE (°C) 300 0.1 3.0 130 260 390 520 650 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Eoss vs. Drain−to−Source Voltage www.onsemi.com 5 FCH029N65S3 R(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE TYPICAL CHARACTERISTICS 2 1 Duty Cycle − Descending Order 0.5 0.2 0.1 0.1 0.05 0.02 P DM 0.01 0.01 0.001 t1 Single Pulse t2 10−5 10−4 10−3 10−2 10−1 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Transient Thermal Response Curve www.onsemi.com 6 ZqJC(t) = r(t) x RqJC RqJC = 0.27°C/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1/t2 100 101 FCH029N65S3 VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 13. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr td(off) ton tf toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time FCH029N65S3 + DUT VDS − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CX ISSUE A DATE 06 JUL 2020 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG DOCUMENT NUMBER: DESCRIPTION: XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 98AON93302G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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