FCH041N65EFLN4

MOSFET – Power, N-Channel, SUPERFET) II, FRFET) 650 V, 76 A, 41 mW FCH041N65EFLN4 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET II MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET II FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. Features • • • • • • 700 V @ TJ = 150°C Typ. RDS(on) = 36 mW Ultra Low Gate Charge (Typ. Qg = 229 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 631 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant Applications • • • • www.onsemi.com VDSS RDS(ON) MAX ID MAX 650 V 41 mW @ 10 V 76 A D G S1: Driver Source S2: Power Source S2 S1 POWER MOSFET D S2 S1 G Telecom / Server Power Supplies Industrial Power Supplies EV Charger UPS / Solar TO−247−4LD CASE 340CW MARKING DIAGRAM $Y&Z&3&K FCH041 N65EFLN4 $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FCH041N65EFLN4 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2018 November, 2019 − Rev. 1 1 Publication Order Number: FCH041N65EFLN4/D FCH041N65EFLN4 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy (Note 2) IAS Avalanche Current (Note 2) EAR dv/dt PD TL Unit 650 V − DC ±20 V − AC (f > 1 Hz) ±30 − Continuous (TC = 25°C) 76 − Continuous (TC = 100°C) 48.1 − Pulsed (Note 1) A 228 A 2025 mJ 15 A Repetitive Avalanche Energy (Note 1) 5.95 mJ MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 Power Dissipation TJ, TSTG Value (TC = 25°C) 595 W − Derate Above 25°C 4.76 W/°C −55 to +150 °C 300 °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse width limited by maximum junction temperature. 2. IAS = 15 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 38 A, di/dt ≤ 200 A/ms, VDD ≤ 380 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter RqJC Thermal Resistance, Junction to Case, Max. RqJA Thermal Resistance, Junction to Ambient, Max. Value Unit 0.21 _C/W 40 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package FCH041N65EFLN4 FCH041N65EFLN4 TO−247 L4 Narrow Lead Packing Method Reel Size Tape Width Quantity Tube N/A N/A 30 Units ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS = 0 V, ID = 10 mA, TJ = 25_C 650 − − V VGS = 0 V, ID = 10 mA, TJ = 150_C 700 − − V OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS / DTJ Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25_C − 0.72 − V/_C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V − − 10 mA VDS = 520 V, TC = 125_C − 145 − VGS = ±20 V, VDS = 0 V − − ±100 nA 3.0 − 5.0 V − 36 41 mW IGSS Gate to Body Leakage Current ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 7.6 mA RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 38 A www.onsemi.com 2 FCH041N65EFLN4 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (continued) Symbol Parameter Test Conditions Min. Typ. Max. Unit VDS = 20 V, ID = 38 A − 71.7 − S VDS = 100 V, VGS = 0 V, f = 1 MHz ON CHARACTERISTICS gFS Forward Transconductance DYNAMIC CHARACTERISTICS Ciss Input Capacitance − 9446 12560 pF Coss Output Capacitance − 366 490 pF Crss Reverse Transfer Capacitance − 35 − pF Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz − 197 − pF Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 631 − pF Total Gate Charge at 10 V VDS = 380 V, ID = 38 A, VGS = 10 V (Note 4) − 229 298 nC − 50 − nC Coss(eff.) Qg(tot) Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance − 90 − nC f = 1 MHz − 0.6 − W VDD = 380 V, ID = 38 A, VGS = 10 V, Rg = 2 W (Note 4) − 55 120 ns − 25 60 ns SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time − 169 348 ns Turn-Off Fall Time − 18 46 ns Maximum Continuous Drain to Source Diode Forward Current − − 76 A ISM Maximum Pulsed Drain to Source Diode Forward Current − − 228 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 38 A − − 1.2 V trr Reverse Recovery Time − 207 − ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 38 A, dIF/dt = 100 A/ms − 1.5 − mC tf SOURCE-DRAIN DIODE CHARACTERISTICS IS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. TYPICAL PERFORMANCE CHARACTERISTICS 200 VGS = 20.0 V 10.0 V 8.0 V 7.0 V 100 6.5 V 6.0 V 5.5 V 100 ID, Drain Current (A) ID, Drain Current (A) 500 10 1 0.1 250 ms Pulse Test TC = 25°C 1 VDS, Drain−Source Voltage (V) 150°C 25°C 10 1 10 Figure 1. On−Region Characteristics −55°C VDS = 20 V 250 ms Pulse Test 3 5 4 6 7 VGS, Gate−Source Voltage (V) Figure 2. Transfer Characteristics www.onsemi.com 3 8 FCH041N65EFLN4 TYPICAL PERFORMANCE CHARACTERISTICS (continued) 1000 100 IS, Reverse Drain Current [A] RDS(ON) [W], Drain−Source On−Resistance 0.06 0.05 VGS = 10V 0.04 VGS = 20V o 150 C 10 1 o 25 C 0.1 *Notes: 1. VGS = 0V 0.01 o 0.03 *Note: TC = 25 C 0 40 80 120 160 ID, Drain Current [A] 200 0.001 0.0 240 2.0 10 VGS, Gate−Source Voltage [V] 100000 Ciss 10000 Capacitances [pF] 0.5 1.0 1.5 VSD, Body Diode Forward Voltage [V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 3. On−Resistance Variation vs.Drain Current and Gate Voltage 1000 Coss 100 *Note: 1. VGS = 0V 2. f = 1MHz 10 Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 0.1 VDS = 130V VDS = 325V 8 VDS = 520V 6 4 2 *Note: I D = 38A 1 10 100 VDS, Drain−Source Voltage [V] 0 1000 0 Figure 5. Capacitance Characteristics 1.15 2.5 1.10 2.0 1.05 1.00 0.95 50 100 150 200 Qg, Total Gate Charge [nC] 250 Figure 6. Gate Charge Characteristics RDS(on), [Normalized] Drain−Source On−Resistance BVDSS, [Normalized] Drain−Source Breakdown Voltage 2. 250 ms Pulse Test *Notes: 1. V GS = 0V 2. I D = 10mA 0.90 −75 −50 −25 0 25 50 75 100 125 150 o TJ, Junction Temperature [ C] 1.5 1.0 0.5 *Notes: 1. VGS = 10V 2. I D = 38A 0.0 −75 −50 −25 0 25 50 75 100 125 150 o TJ, Junction Temperature [ C] Figure 8. On−Resistance Variation vs. Temperature Figure 7. Breakdown Voltage Variation vs. Temperature www.onsemi.com 4 FCH041N65EFLN4 TYPICAL PERFORMANCE CHARACTERISTICS (continued) 80 500 10m s 100m s DC 10 1ms ID, Drain Current [A] ID, Drain Current [A] 100 Operation in This Area is Limited by R DS(on) 1 *Notes: 0.1 o 1. TC = 25 C 60 40 20 o 0.01 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain−Source Voltage [V] 0 25 1000 Figure 9. Maximum Safe Operating Area 50 75 100 125 o TC, Case Temperature [ C] Figure 10. Maximum Drain Current vs. Case Temperature 52.0 31.2 20.8 10.4 0 100 200 300 400 500 600 VDS, Drain to Source Voltage [V] 700 Figure 11. EOSS vs. Drain to Source Voltage 0.5 o ZqJC(t), Thermal Response [ C/W] EOSS, [m J] 41.6 0 0.1 0.5 0.2 P DM 0.1 0.01 0.05 t1 0.02 0.01 Single pulse 0.001 −5 10 *Notes: t2 o 1. Z qJC(t) = 0.21 C/W Max. 2. Duty Factor, D= t 1/t2 3. T JM − TC = PDM * Z qJC(t) −4 10 −3 150 −2 −1 10 10 10 t1, Rectangular Pulse Duration [sec] 0 10 Figure 12. Transient Thermal Response Curve www.onsemi.com 5 1 10 FCH041N65EFLN4 VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 13. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr td(off) ton tf toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 6 Time FCH041N65EFLN4 + DUT VDS − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET and FRFET are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 4−LEAD, THIN LEADS CASE 340CW ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON80893G DATE 16 SEP 2019 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−247 4−LEAD, THIN LEADS PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative