MOSFET – N-Channel,
SUPERFET) II, FRFET)
650 V, 76 A, 41 mW
FCH041N65EF
Description
SUPERFET II MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This technology is tailored to minimize
conduction loss, provide superior switching performance, dv/dt rate
and higher avalanche energy. Consequently, SUPERFET II MOSFET
is very suitable for the switching power applications such as PFC,
server/telecom power, FPD TV power, ATX power and industrial
power applications. SUPERFET II FRFET MOSFET’s optimized
body diode reverse recovery performance can remove additional
component and improve system reliability.
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D
G
S
POWER MOSFET
Features
•
•
•
•
•
•
700 V @ TJ = 150°C
Typ. RDS(on) = 36 mW
Ultra Low Gate Charge (Typ. Qg = 229 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 631 pF)
100% Avalanche Tested
These Device is Pb−Free and is RoHS Compliant
TO−247
long leads
CASE 340CH
Applications
•
•
•
•
LCD / LED / PDP TV
Telecom / Server Power Supplies
Solar Inverter
AC−DC Power Supply
MARKING DIAGRAM
$Y&Z&3&K
FCH
041N65EF
$Y
&Z
&3
&K
FCH041N65EF
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2016
April, 2020 − Rev. 3
1
Publication Order Number:
FCH041N65EF/D
FCH041N65EF
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)
Symbol
Parameter
VDSS
Drain to Source Voltage
VGSS
Gate to Source Voltage
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy (Note 2)
IAR
Avalanche Current (Note 1)
EAR
dv/dt
PD
Value
Unit
650
V
DC
±20
V
AC (f > 1 Hz)
±30
Continuous (TC = 25°C)
76
Continuous (TC = 100°C)
48.1
Pulsed (Note 1)
A
228
A
2025
mJ
15
A
Repetitive Avalanche Energy (Note 1)
5.95
mJ
MOSFET dv/dt
100
V/ns
Peak Diode Recovery dv/dt (Note 3)
50
Power Dissipation
(TC = 25°C)
595
W
Derate Above 25°C
4.76
W/°C
TJ, TSTG
Operating and Storage Temperature Range
−55 to +150
°C
TL
Maximum Lead Temperature for Soldering,
1/8″ from Case for 5 seconds
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 15 A, RG = 25 W, starting TJ = 25°C.
3. ISD ≤ 38 A, di/dt ≤ 200 A/ms, VDD ≤ 380 V, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
RqJC
Thermal Resistance, Junction to Case, Max.
0.21
_C/W
RqJA
Thermal Resistance, Junction to Ambient, Max.
40
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Packing
Method
Reel Size
Tape Width
Quantity
FCH041N65EF−F155
FCH041N65EF
TO−247
Tube
N/A
N/A
30 Units
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2
FCH041N65EF
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BVDSS
Drain to Source Breakdown Voltage
VGS = 0 V, ID = 10 mA, TJ = 25_C
650
V
VGS = 0 V, ID = 10 mA, TJ = 150_C
700
V
DBVDSS / DTJ
Breakdown Voltage Temperature
Coefficient
ID = 10 mA, Referenced to 25_C
IDSS
Zero Gate Voltage Drain Current
VDS = 650 V, VGS = 0 V
IGSS
Gate to Body Leakage Current
0.72
V/_C
10
mA
±100
nA
5
V
41
mW
145
VDS = 520 V, TC = 125_C
VGS = ±20 V, VDS = 0 V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 7.6 mA
RDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 38 A
36
Forward Transconductance
VDS = 20 V, ID = 38 A
71.7
VDS = 100 V, VGS = 0 V, f = 1 MHz
9446
12560
pF
490
pF
gFS
3
S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
366
Crss
Reverse Transfer Capacitance
35
pF
Coss
Output Capacitance
VDS = 380 V, VGS = 0 V, f = 1MHz
197
pF
Effective Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
631
pF
Total Gate Charge at 10 V
VDS = 380 V, ID = 38 A, VGS = 10 V
(Note 4)
229
Coss(eff.)
Qg(tot)
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance
298
nC
50
nC
90
nC
f = 1 MHz
0.6
W
VDD = 380 V, ID = 38 A, VGS = 10 V
Rg = 4.7 W
(Note 4)
55
120
ns
65
140
ns
SWITCHING CHARACTERISTICS
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
175
360
ns
Turn-Off Fall Time
48
106
ns
Maximum Continuous Drain to Source Diode Forward Current
76
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
228
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 38A
1.2
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 38 A,
dIF/dt = 100 A/ms
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
IS
207
ns
1.5
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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3
FCH041N65EF
TYPICAL PERFORMANCE CHARACTERISTICS
200
VGS = 20.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
100
100
ID, Drain Current (A)
ID, Drain Current (A)
500
10
150°C
25°C
10
−55°C
*Notes:
1.250 ms Pulse Test
2.TC = 25°C
1
0.1
1
1
10
*Notes:
1.VDS = 20 V
2.250 ms Pulse Test
3
4
5
0.06
1000
0.05
VGS = 10 V
0.04
VGS = 20 V
*Note: TC = 25°C
0
40
80
120
160
200
100
150°C
10
1
25°C
0.1
0.001
0.0
240
*Notes:
1.VGS = 0 V
2.250 ms Pulse Test
0.01
ID, Drain Current (A)
0.5
1.0
1.5
2.0
VSD, Body Diode Forward Voltage (V)
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
Figure 3. On−Resistance Variation
vs. Drain Current and Gate Voltage
100000
10
Ciss
10000
1000
VGS, Gate−Source Voltage (V)
Capacitances (pF)
8
Figure 2. Transfer
Characteristics
IS, Reverse Drain Current (A)
RDS(ON), Drain−Source On−Resistance (W)
Figure 1. On−Region
Characteristics
100
7
VGS, Gate−Source Voltage (V)
VDS, Drain−Source Voltage (V)
0.03
6
Coss
*Note:
1. VGS = 0 V
2. f = 1 MHz
10
1
0.1
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1
10
100
8
6
4
2
0
1000
VDS = 130 V
VDS = 325 V
VDS = 520 V
*Notes: ID = 38 A
0
50
100
150
200
VDS, Drain−Source Voltage (V)
Qg, Total Gate Charge (nC)
Figure 5. Capacitance
Characteristics
Figure 6. Gate Charge
Characteristics
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4
250
FCH041N65EF
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
2.5
RDS(on), Drain−Source
On−Resistance (Normalized)
BVDSS, Drain−Source
Breakdown Voltage (Normalized)
1.15
1.10
1.05
1.00
*Notes:
1. VGS = 0 V
2. ID = 10 mA
0.95
0.90
−75 −50 −25
0
2.0
1.5
1.0
0.0
−75 −50 −25
25 50 75 100 125 150
TJ, Junction Temperature (5C)
80
10 ms
DC
1 ms
100 ms
ID, Drain Current (A)
ID, Drain Current (A)
100
10
Operation in This Area
is Limited by RDS(on)
1
*Notes:
1.TC = 25 °C
2.TJ = 150 °C
3.Single Pulse
0.1
1
10
100
60
40
20
0
25
1000
Figure 9. Maximum Safe
Operating Area
41.6
31.2
20.8
10.4
100
200
300
400
500
75
100
125
150
Figure 10. Maximum Drain
Current vs. Case Temperature
52.0
0
50
TC, Case Temperature (5C)
VDS, Drain−Source Voltage (V)
EOSS, (mJ)
25 50 75 100 125 150
Figure 8. On−Resistance
Variation vs. Temperature
500
0
0
TJ, Junction Temperature (5C)
Figure 7. Breakdown Voltage
Variation vs. Temperature
0.01
*Notes:
1.VGS = 10 V
2.ID = 38 A
0.5
600
700
VDS, Drain to Source Voltage (V)
Figure 11. EOSS vs. Drain to
Source Voltage
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5
FCH041N65EF
ZqJC(t), Thermal Response (5C/W)
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
0.5
0.1
0.5
0.2
P DM
0.1
0.01
0.05
t1
0.02
0.01
Single pulse
t2
*Notes:
1.ZqJC(t) = 0.21 °C/W Max.
2.Duty Factor, D = t1/t2
0.001
−5
10
3.TJM − TC = PDM * ZqJC(t)
−4
10
−3
10
−2
10
−1
10
t1, Rectangular Pulse Duration (sec)
Figure 12. Transient Thermal Response Curve
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6
0
10
1
10
FCH041N65EF
VGS
RL
Qg
VDS
VGS
Qgs
Qgd
DUT
IG = const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
VDS
RL
VDS
90%
90%
90%
VDD
VGS
RG
VGS
DUT
VGS
10%
10%
td(on)
tr
td(off) tf
ton
toff
Figure 14. Resistive Switching Test Circuit & Waveforms
L
E AS + 1 @ LI 2
AS
2
VDS
BVDSS
ID
IAS
RG
VDD
DUT
VGS
ID(t)
VDD
VDS(t)
tp
tp
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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7
Time
FCH041N65EF
+
DUT
VDS
−
ISD
L
Driver
RG
Same Type
as DUT
VGS
− dv/dt controlled by RG
− ISD controlled by pulse period
D+
VGS
(Driver)
VDD
Gate Pulse Width
Gate Pulse Period
10 V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(DUT)
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET and FRFET are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CH
ISSUE A
DATE 09 OCT 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13853G
TO−247−3LD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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