FCH041N65F-F085

MOSFET – N-Channel, SUPERFET) II, FRFET) 650 V, 76 A, 41 mW FCH041N65F-F085 Description SuperFET II Mosfet is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very well suited for the Soft switching and Hard Switching topologies like High Voltage Full Bridge and Half Bridge DC−DC, Interleaved Boost PFC, Boost PFC for HEV−EV automotive. SuperFET II FRFET MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. www.onsemi.com VDS RDS(ON) MAX ID MAX 650 V 41 m @ 10 V 76 A D G Features • • • • • S Typ. RDS(on) = 34 m at VGS = 10 V, ID = 38 A Typ. Qg(tot) = 234 nC at VGS = 10 V, ID = 38 A UIS Capability AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant N-CHANNEL MOSFET S D G Applications • Automotive On Board Charger • Automotive DC/DC Converter for HEV TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FCH041N65F −F085 $Y &Z &3 &K FCH041N65F−F085 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2014 November, 2019 − Rev. 4 1 Publication Order Number: FCH041N65F−F085/D FCH041N65F−F085 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value Unit VDSS Drain to Source Voltage 650 V VGSS Gate to Source Voltage ±20 V TC = 25°C 76 A TC = 100°C 48 A See Fig. 4 A ID Parameter Drain Current − Continuous (VGS = 10) (Note 1) Pulsed Drain Current EAS Single Pulsed Avalanche Rating (Note 2) 2025 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 Power Dissipation 595 W Derate Above 25°C 4.76 W/°C −55 to + 150 °C PD TJ, TSTG Operating and Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 15 A, RG = 25 , starting TJ = 25 °C. 3. ISD ≤ 38 A, di/dt ≤ 200 A/s, VDD ≤ 380 V, starting TJ = 25 °C. PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity FCH041N65F FCH041N65F−F085 TO−247−3 − − 30 Units THERMAL CHARACTERISTICS Symbol Parameter RJC Thermal Resistance, Junction to Case, Max. RJA Thermal Resistance, Junction to Ambient, Max. (Note 4) Value Unit 0.21 °C/W 40 4. RJA is the sum of the junction−to−case and case−to−ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design, while RJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. www.onsemi.com 2 FCH041N65F−F085 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Unit 650 − − V TJ = 25 °C − − 10 A TJ = 150 °C (Note 5) − − 1 mA VGS = ±20 V − − ±100 nA OFF CHARACTERISTICS BVDSS IDSS IGSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0 V Drain to Source Leakage Current VDS = 650 V, VGS = 0 V Gate to Source Leakage Current ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 A 3 − 5 V RDS(on) Drain to Source On Resistance ID = 38 A VGS = 10 V TJ = 25 °C − 34 41 m TJ = 150 °C (Note 5) − 80 96 m − 10200 13566 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss(eff.) Effective Output Capacitance VDS = 25 V, VGS = 0 V, f = 1 MHz − 10529 14004 pF − 227 − pF VDS = 0 V to 520 V, VGS = 0 V − 843 − pF Gate Resistance f = 1 MHz − 0.5 −  Qg(tot) Total Gate Charge − 234 304 nC Qg(th) Threshold Gate Charge VDD = 380 V, ID = 38 A, VGS = 10 V − 17 22 nC Rg Qgs Gate to Source Gate Charge − 50 − nC Qgd Gate to Drain “Miller”Charge − 90 − nC − 94 207 ns − 55 − ns SWITCHING CHARACTERISTICS ton Turn−On Time VDD = 380 V, ID = 38 A, VGS = 10 V, RG = 4.7  td(on) Turn-On Delay Time tr Turn−On Rise Time − 39 − ns td(off) Turn-Off Delay Time − 183 − ns Turn−Off Fall Time − 8 − ns Turn−Off Time − 191 402 ns tf toff DRAIN-SOURCE DIODE CHARACTERISTICS Source to Drain Diode Voltage VGS = 0 V, ISD = 38 A − − 1.2 V trr Reverse Recovery Time − 235 − ns Qrr Reverse Recovery Charge VDD = 480 V, IF = 38 A, diSD/dt = 100 A/s − 2 − C VSD Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. The maximum value is specified by design at TJ = 150°C. Product is not tested to this condition in production. www.onsemi.com 3 FCH041N65F−F085 TYPICAL CHARACTERISTICS 100 VGS = 10V ID, Drain Current (A) 1.0 0.8 0.6 0.4 0.0 80 60 40 20 0.2 0 25 50 75 100 125 0 150 25 75 100 125 150 Figure 2. Maximum Continuous Drain Current vs. Case Temperature Figure 1. Normalized Power Dissipation vs. Case Temperature Normalized Thermal Impedance, ZJC 50 TC, Case Temperature (°C) TC, Case Temperature (°C) 2 DUTY CYCLE − DESCENDING ORDER 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t 1/t 2 PEAK T J = PDM x Z JC x R JC + TC SINGLE PULSE 0.01 −5 10 −4 −3 10 10 −2 −1 10 10 t, Rectangular Pulse Duration(s) Figure 3. Normalized Maximum Transient Thermal Impedance 10000 T C = 25 o C VGS = 10V FOR TEMPERA TURES ABOVE 25 o C DERAT E PEAK IDM, Peak Current (A) Power Dissipation Multiplier 1.2 1000 CURRE NT AS FOLLOWS: I = I2 150 − T C 12 5 100 10 1 −5 10 SINGLE PULSE −4 −3 10 10 t, Rectangular Pulse Duration(s) Figure 4. Peak Current Capability www.onsemi.com 4 −2 10 −1 10 FCH041N65F−F085 TYPICAL CHARACTERISTICS 200 100 ID, Drain Current (A) ID, Drain Current (A) 1000 10us 10 100us OPERATION IN THIS AREA MAY BE LIMITED BY R DS(on) 1 1ms SINGLE PULSE TJ = MAX RATED 10ms TC = 25 oC 100ms 10 100 160 VDS = 20V 120 TJ = 150oC 80 TJ = 25oC 40 TJ = −55o C 0.1 1 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0 1000 345678 VDS, Drain to Source Voltage (V) Figure 6. Transfer Characteristics Figure 5. Forward Bias Safe Operating Area 200 VGS = 0 V TJ = ID, Drain Current (A) IS, Reverse Drain Current (A) 200 100 150 oC 10 TJ = 25 oC TJ = −55oC 1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 160 VGS 15 V Top 10 V 8V 7V 6V 5.5 V 5 V Bottom 120 80 40 0 1.2 80 s PULSE WIDTH TJ = 25°C 5V 0 4 RDS(on), Drain to Source On−Resistance (m) ID, Drain Current (A) 80 s PULSE WIDTH TJ = 150°C VGS 15 V Top 10 V 8V 7V 6V 5.5 V 5 V Bottom 80 40 5V 0 0 4 8 12 16 12 16 20 Figure 8. Saturation Characteristics Figure 7. Forward Diode Characteristics 120 8 VDS, Drain to Source Voltage (V) VSD, Body Diode Forward Voltage (V) 160 VGS, Gate to Source Voltage (V) 20 VDS, Drain to Source Voltage (V) 250 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX ID = 38A 200 150 100 TJ = 150oC 50 o 0 TJ = 25 C 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) Figure 10. RDSON vs. Gate Voltage Figure 9. Saturation Characteristics www.onsemi.com 5 FCH041N65F−F085 3.0 PULSE DURATION = 80  s DUTY CYCLE = 0.5% MAX 2.5 2.0 1.5 1.0 ID = 38A VGS = 10V 0.5 0.0 −80 −40 0 40 80 120 160 200 VGS = VDS ID = 250 A 1.1 1.0 0.9 0.8 0.7 0.6 0.5 −80 −40 TJ, Junction Temperature (°C) 0 40 80 120 160 200 TJ, Junction Temperature (°C) Figure 12. Normalized Gate Threshold Voltage vs. Temperature Figure 11. Normalized RDSON vs. Junction Temperature 1.10 100000 ID = 10mA 1.05 Capacitance (pF) Normalized Drain to Source Breakdown Voltage 1.2 Normalized Gate Threshold Voltage Normalized Drain to Source On−Resistance TYPICAL CHARACTERISTICS 1.00 0.95 Ciss 10000 1000 Coss 100 10 0.90 −75 −50 −25 0 25 50 f = 1MHz VGS = 0V 1 0.1 75 100 125 150 TJ, Junction Temperature (°C) Crss 1 10 100 1000 VDS, Drain to Source Voltage (V) Figure 14. Capacitance vs. Drain to Source Voltage Figure 13. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature 54.0 ID = 38 A 8 43.2 VDS = 260V VDS = 325V Eoss, (J) VGS, Gate to Source Voltage (V) 10 VDS = 390V 6 4 21.6 10.8 2 0 32.4 0 40 80 120 160 200 0 240 0 132 264 396 528 660 VDS, Drain to Source Voltage (V) Qg, Gate Charge (nC) Figure 16. Eoss vs. Drain to Source Voltage Figure 15. Gate Charge vs. Gate to Source Voltage www.onsemi.com 6 FCH041N65F−F085 VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 17. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr tf td(off) ton toff Figure 18. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 19. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time FCH041N65F−F085 + DUT VSD − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 20. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. FRFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative