FCH041N65F_F155

MOSFET – N-Channel, SUPERFET) II, FRFET) 650 V, 76 A, 41 mW FCH041N65F Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SUPERFET II FRFET MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. www.onsemi.com VDS RDS(ON) MAX ID MAX 650 V 41 mW @ 10 V 76 A D G Features • • • • • • 700 V @ TJ = 150°C Typ. RDS(on)) = 36 mW Ultra Low Gate Charge (Typ. Qg = 226 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 1278 pF) 100% Avalanche Tested This Device is Pb−Free and is RoHS Compliant S N-CHANNEL MOSFET S D G Applications • • • • LCD, LED, PDP TV Solar Inverter Telecom, Server Power Supplies AC−DC Power Supply TO−247−3LD CASE 340CH MARKING DIAGRAM $Y&Z&3&K FCH 041N65F $Y &Z &3 &K FCH041N65F = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2014 September, 2020 − Rev. 4 1 Publication Order Number: FCH041N65F/D FCH041N65F ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) EAR dv/dt PD TJ, TSTG TL Unit 650 V ±20 V −DC −AC ID FCH041N65F−F155 (f > 1 Hz) ±30 −Continuous (TC = 25°C) 76 −Continuous (TC = 100°C) 48.1 −Pulsed (Note 1) A 228 A 2025 mJ 15 A Repetitive Avalanche Energy (Note 1) 5.95 mJ MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 Power Dissipation (TC = 25°C) 595 W −Derate Above 25°C 4.76 W/°C −55 to + 150 °C 300 °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, ⅛ from Case for 5 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. IAS = 15 A, RG = 25 W, Starting TJ = 25°C 3. ISD ≤ 38 A, di/dt ≤ 200 A/ms, VDD ≤ 380 V, Starting TJ = 25 °C. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FCH041N65F−F155 FCH041N65F TO−247−3LD Tube N/A N/A 30 Units THERMAL CHARACTERISTICS Symbol Parameter RqJC Thermal Resistance, Junction to Case, Max. RqJA Thermal Resistance, Junction to Ambient, Max. FCH041N65F−F155 Unit 0.21 °C/W 40 www.onsemi.com 2 FCH041N65F ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Unit VGS = 0 V, ID = 10 mA, TJ = 25°C 650 − − V VGS = 0 V, ID = 10 mA, TJ = 150°C 700 − − OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS/ DTJ Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25°C − 0.72 − V/°C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V − − 10 mA VDS = 520 V, TC = 125°C − 232 − VGS = ±20 V, VDS = 0 V − − ±100 nA IGSS Gate to Body Leakage Current ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 7.6 mA 3 − 5 V RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 38 A − 36 41 mW Forward Transconductance VDS = 20 V, ID = 38 A − 18 − S VDS = 100 V, VGS = 0 V, f = 1 MHz − 9790 13020 pF gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Coss(eff.) Qg(tot) − 355 470 pF − 32 − pF VDS = 380 V, VGS = 0 V, f = 1 MHz − 192 − pF Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 1278 − pF Total Gate Charge at 10 V VDD = 380 V, ID = 38 A, VGS = 10 V (Note 4) − 226 294 nC − 50 − nC − 90 − nC f = 1 MHz − 0.6 − W VDD = 380 V, ID = 38 A, VGS = 10 V, RG = 4.7 W (Note 4) − 60 130 ns − 47 104 ns Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller”Charge ESR Equivalent Series Resistance SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time − 190 390 ns Turn-Off Fall Time − 6.5 23 ns Maximum Continuous Drain to Source Diode Forward Current − − 76 A ISM Maximum Pulsed Drain to Source Diode Forward Current − − 228 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 38 A − − 1.2 V trr Reverse Recovery Time − 213 − ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 38 A, dIF/dt = 100 A/ms − 1.3 − mC tf DRAIN-SOURCE DIODE CHARACTERISTICS IS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 FCH041N65F TYPICAL PERFORMANCE CHARACTERISTICS 200 VGS = 20.0 V 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 100 10 *Notes: 1. 250 ms Pulse Test 2. TC = 25°C 1 0.1 *Notes: 1. VDS = 20 V 2. 250 ms Pulse Test 100 ID, Drain Current (A) ID, Drain Current (A) 500 1 VDS, Drain−Source Voltage (V) 150°C 25°C 10 −55°C 1 3 10 IS, Reverse Drain Current (A) RDS(ON), Drain−Source On−Resistance (W) 1000 0.06 0.05 VGS = 10 V 0.04 VGS = 20 V *Note: TC = 25°C 0 40 80 120 160 ID, Drain Current (A) 200 Ciss 1000 VGS, Gate−Source Voltage (V) Capacitance (pF) 10 25°C 1 0.1 *Notes: 1. VGS = 0 V 2. 250 ms Pulse Test 0.01 0.5 1.0 1.5 2.0 VSD, Body Diode Forward Voltage (V) 10 10000 10 150°C Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 100000 100 100 0.001 0.0 240 Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage 1 8 Figure 2. Transfer Characteristics Figure 1. On−Region Characteristics 0.03 5 6 7 4 VGS, Gate−Source Voltage (V) Coss *Note: 1. VGS = 0 V 2. f = 1 MHz Crss Ciss = Cgs + Cgd (Cds = Shorted) Coss = Cds + Cgd Crss = Cgd 0.1 1 10 100 VDS = 130 V 6 4 2 1000 VDS, Drain−Source Voltage (V) VDS = 325 V VDS = 520 V 8 *Note: ID = 38 A 20 50 100 150 200 240 Qg, Total Gate Charge (nC) Figure 6. Gate Charge Characteristics Figure 5. Capacitance Characteristics www.onsemi.com 4 FCH041N65F TYPICAL PERFORMANCE CHARACTERISTICS (continued) 2.5 RDS(on), (Normalized) Drain−Source On−Resistance BVDSS, (Normalized) Drain−Source Breakdown Voltage 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0 V 2. ID = 10 mA 1.0 *Notes: 1. VGS = 10V 2. ID = 38A 0.5 0.0 −75 −50 −25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On−Resistance Variation vs. Temperature 80 10 ms 100 100 ms 1 ms 10 DC Operation in This Area is Limited by RDS(on) 1 *Notes: 1. TC = 25°C 2. TJ = 150°C 3. Single Pulse 0.1 0.01 ID, Drain Current (A) ID, Drain Current (A) 1.5 0.90 −75 −50 −25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) 500 1 10 100 43.2 32.4 21.6 10.8 132 264 396 528 50 75 100 125 TC, Case Temperature (°C) 150 Figure 10. Maximum Drain Current vs. Case Temperature 54.0 0 40 0 25 1000 Figure 9. Maximum Safe Operating Area 0 60 20 VDS, Drain−Source Voltage (V) EOSS (mJ) 2.0 660 VDS, Drain to Source Voltage (V) Figure 11. EOSS vs. Drain to Source Voltage www.onsemi.com 5 FCH041N65F ZqJC(t), Thermal Response (°C/W) TYPICAL PERFORMANCE CHARACTERISTICS (continued) 0.5 0.1 0.5 0.2 PDM 0.1 0.05 0.01 0.02 0.01 Single Pulse 1E−3 10−5 10−4 t1 t2 *Notes: 1. ZqJC(t) = 0.21°C/W Max. 2. Duty Factor, D = t1/t2 3. TJM − TC = PDM * ZqJC(t) 10−1 10−2 10−3 t1, Rectangular Pulse Duration (sec) Figure 12. Transient Thermal Response Curve www.onsemi.com 6 100 FCH041N65F VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 13. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr tf td(off) ton toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time FCH041N65F + DUT VDS − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. FRFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CH ISSUE A DATE 09 OCT 2019 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13853G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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