FCH043N60

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FCH043N60 N-Channel SuperFET® II MOSFET 600 V, 75 A, 43 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency. • Typ. RDS(on) = 37 mΩ • Ultra Low Gate Charge (Typ. Qg = 163 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 730 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial Power Supplies D G D G S TO-247 S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 15 A EAR Repetitive Avalanche Energy (Note 1) 5.92 mJ dv/dt Parameter - DC ±20 - AC (f > 1 Hz) - Continuous (TC = 25oC) - Pulsed ±30 75 - Continuous (TC = 100oC) 47.5 (TC = 25oC) TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds A 225 A 2025 mJ 100 - Derate Above 25oC V (Note 1) (Note 3) Power Dissipation Unit V (Note 2) MOSFET dv/dt Peak Diode Recovery dv/dt PD TL FCH043N60 600 20 V/ns 592 W 4.74 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case, Max. RθJA Thermal Resistance, Junction to Ambient, Max. ©2014 Fairchild Semiconductor Corporation FCH043N60 Rev. C0 FCH043N60 0.21 40 1 Unit oC/W www.fairchildsemi.com FCH043N60 — N-Channel SuperFET® II MOSFET April 2014 Part Number FCH043N60 Top Mark FCH043N60 Package TO-247 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain to Source Breakdown Voltage ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 10 mA, VGS = 0 V, TC = 25oC ID = 10 mA, VGS = 0 V, TC = 150oC ID = 10 mA, Referenced to 25oC VDS = 600 V, VGS = 0 V 600 - - 650 - - - 0.67 - - - 1 VDS = 480 V, VGS = 0 V, TC = 125oC - 4.5 - VGS = ±20 V, VDS = 0 V - - ±100 V V/oC μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA 2.5 - 3.5 V Static Drain to Source On Resistance VGS = 10 V, ID = 38 A - 37 43 mΩ gFS Forward Transconductance VDS = 20 V, ID = 38 A - 73 - S VDS = 400 V, VGS = 0 V, f = 1 MHz - 9194 12225 pF - 353 470 pF pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 11 16 Cosseff. Effective Output Capacitance VDS = 0 V to 480 V, VGS = 0 V - 730 - pF Qg(tot) Total Gate Charge at 10V - 163 215 nC Qgs Gate to Source Gate Charge VDS = 380 V, ID = 38 A, VGS = 10 V Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance (Note 4) f = 1 MHz - 35 - nC - 39 - nC - 1.1 - Ω - 46 102 ns - 36 82 ns - 162 334 ns - 6 - ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380 V, ID = 38 A, VGS = 10 V, RG = 4.7 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 75 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 225 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 38 A - - 1.2 V trr Reverse Recovery Time - 605 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 38 A, dIF/dt = 100 A/μs - 16 - μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 15 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 38 A, di/dt ≤ 200 A/μs, VDD ≤ 380V, starting TJ = 25°C. 4. Essentially independent of operating temperature. ©2014 Fairchild Semiconductor Corporation FCH043N60 Rev. C0 2 www.fairchildsemi.com FCH043N60 — N-Channel SuperFET® II MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1000 VGS = 10.0V 8.0V 6.0V 5.0V 4.5V 4.0V 100 ID, Drain Current[A] ID, Drain Current[A] 1000 10 1 100 o 150 C o 25 C 10 o -55 C *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 0.1 0.01 2. TC = 25 C 0.1 1 VDS, Drain-Source Voltage[V] 1 10 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3 4 5 6 VGS, Gate-Source Voltage[V] IS, Reverse Drain Current [A] 1000 0.05 VGS = 10V 0.04 VGS = 20V 100 o 150 C 10 1 o 25 C 0.1 *Notes: 1. VGS = 0V 0.01 o 0.03 *Note: TC = 25 C 0 45 90 135 ID, Drain Current [A] 180 0.001 0.0 225 Figure 5. Capacitance Characteristics 10 Capacitances [pF] 1000 10 VGS, Gate-Source Voltage [V] Ciss 10000 Coss *Note: 1. VGS = 0V 2. f = 1MHz Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 0.1 1 10 100 VDS, Drain-Source Voltage [V] ©2014 Fairchild Semiconductor Corporation FCH043N60 Rev. C0 2. 250μs Pulse Test 0.3 0.6 0.9 1.2 VSD, Body Diode Forward Voltage [V] 1.5 Figure 6. Gate Charge Characteristics 100000 100 7 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.06 RDS(ON) [Ω], Drain-Source On-Resistance 2 VDS = 120V 8 VDS = 300V 6 VDS = 480V 4 2 0 1000 3 *Note: ID = 38A 0 40 80 120 160 Qg, Total Gate Charge [nC] 200 www.fairchildsemi.com FCH043N60 — N-Channel SuperFET® II MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 *Notes: 1. VGS = 0V 2. ID = 10mA RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 0.5 -100 200 Figure 9. Maximum Safe Operating Area -50 0 50 100 o TJ, Junction Temperature [ C] 150 Figure 10. Maximum Drain Current vs. Case Temperature 75 1000 10μs 100 ID, Drain Current [A] ID, Drain Current [A] *Notes: 1. VGS = 10V 2. ID = 38A 100μs 1ms 10ms DC 10 Operation in This Area is Limited by R DS(on) 1 *Notes: o 0.1 50 25 1. TC = 25 C o 0.01 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Eoss vs. Drain to Source Voltage Switching Capability 45 EOSS, [μJ] 36 27 18 9 0 0 122 244 366 488 VDS, Drain to Source Voltage [V] ©2014 Fairchild Semiconductor Corporation FCH043N60 Rev. C0 610 4 www.fairchildsemi.com FCH043N60 — N-Channel SuperFET® II MOSFET Typical Performance Characteristics (Continued) FCH043N60 — N-Channel SuperFET® II MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve o ZθJC(t), Thermal Response [ C/W] 1 0.1 0.5 0.2 PDM 0.1 0.01 t1 0.05 0.02 0.01 Single pulse 0.001 -5 10 ©2014 Fairchild Semiconductor Corporation FCH043N60 Rev. C0 t2 *Notes: o 1. ZθJC(t) = 0.21 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 10 -3 -2 10 10 Rectangular Pulse Duration [sec] 5 -1 10 1 www.fairchildsemi.com FCH043N60 — N-Channel SuperFET® II MOSFET Figure 13. Gate Charge Test Circuit & Waveform Figure 14. Resistive Switching Test Circuit & Waveforms Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms ©2014 Fairchild Semiconductor Corporation FCH043N60 Rev. C0 6 www.fairchildsemi.com FCH043N60 — N-Channel SuperFET® II MOSFET Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop ©2014 Fairchild Semiconductor Corporation FCH043N60 Rev. C0 7 www.fairchildsemi.com FCH043N60 — N-Channel SuperFET® II MOSFET Mechanical Dimensions TO-247 3L Figure 17. TO-247,Molded, 3 Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-003 ©2014 Fairchild Semiconductor Corporation FCH043N60 Rev. C0 8 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Definition Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I68 ©2014 Fairchild Semiconductor Corporation FCH043N60 Rev. C0 9 www.fairchildsemi.com FCH043N60 — N-Channel SuperFET® II MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. F-PFS™ AccuPower™ ®* ® FRFET® AX-CAP®* Global Power ResourceSM PowerTrench® BitSiC™ TinyBoost® GreenBridge™ PowerXS™ Build it Now™ TinyBuck® Green FPS™ Programmable Active Droop™ CorePLUS™ TinyCalc™ Green FPS™ e-Series™ QFET® CorePOWER™ TinyLogic® CROSSVOLT™ QS™ Gmax™ TINYOPTO™ CTL™ GTO™ Quiet Series™ TinyPower™ Current Transfer Logic™ IntelliMAX™ RapidConfigure™ TinyPWM™ DEUXPEED® ISOPLANAR™ ™ TinyWire™ Dual Cool™ Marking Small Speakers Sound Louder TranSiC™ EcoSPARK® and Better™ Saving our world, 1mW/W/kW at a time™ TriFault Detect™ EfficentMax™ MegaBuck™ SignalWise™ TRUECURRENT®* ESBC™ MICROCOUPLER™ SmartMax™ μSerDes™ MicroFET™ SMART START™ ® MicroPak™ Solutions for Your Success™ MicroPak2™ SPM® Fairchild® UHC® STEALTH™ MillerDrive™ Fairchild Semiconductor® Ultra FRFET™ SuperFET® MotionMax™ FACT Quiet Series™ SuperSOT™-3 UniFET™ mWSaver® FACT® OptoHiT™ SuperSOT™-6 VCX™ FAST® OPTOLOGIC® SuperSOT™-8 VisualMax™ FastvCore™ OPTOPLANAR® SupreMOS® VoltagePlus™ FETBench™ SyncFET™ XS™ FPS™ Sync-Lock™ ? ? ™ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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