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FCH072N60

FCH072N60

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    TO247

  • 描述:

    MOSFET N-CH 600V 52A TO247

  • 数据手册
  • 价格&库存
FCH072N60 数据手册
MOSFET – N-Channel, SUPERFET) II 600 V, 52 A, 72 mW FCH072N60 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency. www.onsemi.com VDS RDS(ON) MAX ID MAX 600 V 72 mW @ 10 V 52 A D Features • • • • • • Typ. RDS(on) = 66 mW 650 V @ TJ = 150°C Ultra Low Gate Charge (Typ. Qg = 95 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 421 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant G S N-CHANNEL MOSFET Applications • Telecom / Sever Power Supplies • Industrial Power Supplies S D G TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FCH 072N60 $Y &Z &3 &K FCH072N60 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2014 November, 2019 − Rev. 3 1 Publication Order Number: FCH072N60/D FCH072N60 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current: IDM Drain Current: EAS Single Pulsed Avalanche Energy (Note 2) IAR FCH072N60 Unit 600 V − DC ±20 V − AC (f > 1 Hz) ±30 − Continuous (TC = 25°C) 52 − Continuous (TC = 100°C) 33 156 A 1128 mJ Avalanche Current (Note 1) 9.5 A EAR Repetitive Avalanche Energy (Note 1) 4.8 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD TJ, TSTG TL − Pulsed (Note 1) A Power Dissipation (TC = 25°C) 481 W − Derate Above 25°C 3.85 W/°C −55 to + 150 °C 300 °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 9.5 A, RG = 25 W, Starting TJ = 25 °C. 3. ISD ≤ 26 A, di/dt ≤ 200 A/ms, VDD ≤ 380 V, Starting TJ = 25 °C. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FCH072N60 FCH072N60 TO−247 Tube N/A N/A 30 Units THERMAL CHARACTERISTICS Symbol Parameter RqJC Thermal Resistance, Junction to Case, Max. RqJA Thermal Resistance, Junction to Ambient, Max. FCH072N60 Unit 0.26 °C/W 40 www.onsemi.com 2 FCH072N60 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Unit ID = 10 mA, VGS = 0 V, TJ = 25°C 600 − − V ID = 10 mA, VGS = 0 V, TJ = 150°C 650 − − OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS /DTJ Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25°C − 0.67 − V/°C IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V − − 1 mA VDS = 480 V, VGS = 0 V, TC = 125 °C − 4.1 − VGS = ±20 V, VDS = 0 V − − ±100 nA 2.5 − 3.5 V IGSS Gate to Body Leakage Current ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 mA RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 26 A − 66 72 mW Forward Transconductance VDS = 20 V, ID = 26 A − 48 − S VDS = 380 V, VGS = 0 V, f = 1 MHz − 4430 5890 pF gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance − 115 155 pF Crss Reverse Transfer Capacitance − 4.43 − pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 480 V, VGS = 0 V − 421 − pF Total Gate Charge at 10 V VDS = 380 V, ID = 26 A, VGS = 10 V (Note 4) − 95 125 nC − 21 − nC − 24 − nC f = 1 MHz − 0.93 − W VDD = 380 V, ID = 26 A, VGS = 10 V, Rg = 4.7 W (Note 4) − 33 76 ns − 23 56 ns Qg(tot) Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn−On Rise Time td(off) Turn-Off Delay Time − 97 204 ns Turn−Off Fall Time − 3.5 17 ns tf DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuous Source to Drain Diode Forward Current − − 52 A ISM Maximum Pulsed Drain to Source Diode Forward Current − − 156 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 26 A − − 1.2 V trr Reverse Recovery Time − 495 − ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 26 A, dIF/dt = 100 A/ms − 13 − mC IS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature. www.onsemi.com 3 FCH072N60 TYPICAL CHARACTERISTICS 200 200 VGS = 10.0 V 8.0 V 7.0 V 6.0 V 5.0 V 4.5 V 4.0 V *Notes: 1. VDS = 20 V 2. 250 ms Pulse Test 100 ID, Drain Current [A] ID, Drain Current [A] 100 10 o 150 C o 25 C 10 o −55 C *Notes: 1. 250 ms Pulse Test 2. TC = 25°C 1 0.1 1 VDS, Drain−Source Voltage[V] 10 1 20 2 IS, Reverse Drain Current [A] RDS(on) [W], Drain−Source On−Resistance 200 100 o *Note: T C = 25 C 0.12 0.09 0.06 VGS = 10V VGS = 20V 0 40 80 120 ID, Drain Current [A] 10 o 150 C 1 o 25 C 0.1 0.01 10 VGS, Gate−Source Voltage [V] Ciss 1000 Coss 100 *Notes: 1. VGS = 0 V 2. f = 1 MHz 10 Ciss = Cgs + Cgd(Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 0.3 0.1 1 10 100 VDS, Drain−Source Voltage [V] 0.3 0.6 0.9 1.2 VSD, Body Diode Forward Voltage [V] 1.5 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 100000 Capacitances [pF] *Notes: 1. VGS = 0 V 2. 250 ms Pulse Test 0.001 0.0 160 Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage 10000 7 Figure 2. Transfer Characteristics Figure 1. On−Region Characteristics 0.15 3 4 5 6 VGS, Gate−Source Voltage[V] Crss VDS = 120V 8 VDS = 300V 6 VDS = 480V 4 2 0 600 *Note: I D = 26A 0 20 40 60 80 Qg, Total gate Charge [nC] 100 Figure 6. Gate Charge Characteristics Figure 5. Capacitance Characteristics www.onsemi.com 4 FCH072N60 TYPICAL CHARACTERISTICS 2.5 *Notes: 1. VGS = 0 V 2. ID = 10 mA 1.1 RDS(on) , [Normalized] Drain−Source On−Resistance BV DSS, [Normalized] Drain−Source Breakdown Voltage 1.2 1.0 0.9 0.8 −100 −50 0 50 100 150 o TJ, Junction Temperature [ C] *Notes: 1. VGS = 10 V 2. ID = 26 A 2.0 1.5 1.0 0.5 −100 200 −50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 8. On−Resistance Variation vs. Temperature Figure 7. Breakdown Voltage Variation vs. Temperature 300 60 100 48 100 ms ID, Drain Current [A] ID, Drain Current [A] 10 ms 1ms 10 Operation in This Area is Limited by RDS(on) 1 10ms DC *Notes: 1. TC = 25°C 2. TJ = 150°C 3. Single Pulse 0.1 0.1 1 10 100 VDS, Drain−Source Voltage [V] 0 25 1000 Eoss, [mJ ] 24 18 12 6 120 240 360 480 VDS, Drain to Source Voltage [V] 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 10. Maximum Drain Current vs. Case Temperature 30 0 24 12 Figure 9. Maximum Safe Operating Area 0 36 600 Figure 11. Eoss vs. Drain to Source Voltage www.onsemi.com 5 FCH072N60 TYPICAL CHARACTERISTICS ZqJC(t), Thermal Response [°C/W] 0.5 0.5 0.1 PDM 0.2 t1 t2 *Notes: 1. ZqJC(t) = 0.26°C/W Max. 2. Duty Factor, D = t1/t2 3. TJM − TC = PDM * ZqJC(t) 0.1 0.05 0.02 0.01 Single pulse 0.01 10−5 10−4 −3 10 10 −2 −1 10 t1, Rectangular Pulse Duration [sec] Figure 12. Transient Thermal Response Curve www.onsemi.com 6 0 10 FCH072N60 VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 13. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr tf td(off) ton toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time FCH072N60 + DUT VSD − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative
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