MOSFET – N-Channel,
SUPERFET II, FRFET
600 V, 52 A, 72 mW
FCH072N60F-F085
Description
SUPERFET® II MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This technology is tailored to minimize
conduction loss, provide superior switching performance, dv/dt rate
and higher avalanche energy. Consequently SUPERFETII is very well
suited for the Soft switching and Hard Switching topologies like High
Voltage Full Bridge and Half Bridge DC−DC, Interleaved Boost PFC,
Boost PFC for HEV−EV automotive. SUPERFET II FRFET®
MOSFET’s optimized body diode reverse recovery performance can
remove additional component and improve system reliability.
Features
•
•
•
•
•
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VDSS
RDS(ON) MAX
ID MAX
600 V
72 mW
52 A
D
G
Typical RDS(on) = 62 mW at VGS = 10 V, ID = 26 A
Typical Qg(tot) = 160 nC at VGS = 10 V, ID = 26 A
UIS Capability
Qualified to AEC Q101 and PPAP Capable
This Device is Pb−Free and is RoHS Compliant
S
N-Channel MOSFET
Applications
• Automotive On Board Charger
• Automotive DC/DC Converter for HEV
G
D
S
TO−247
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FCH
072N60F
$Y
&Z
&3
&K
FCH072N60F
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
November, 2020 − Rev. 3
1
Publication Order Number:
FCH072N60F−F085/D
FCH072N60F−F085
MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
Symbol
Ratings
Unit
VDSS
Drain to Source Voltage
600
V
VGS
Gate to Source Voltage
±20
V
52
33
A
ID
Parameter
Drain Current − Continuous (VGS = 10) (Note 1)
TC = 25°C
TC = 100°C
Pulsed Drain Current
See Fig. 4
EAS
Single Pulsed Avalanche Rating (Note 2)
1128
mJ
dv/dt
MOSFET dv/dt
100
V/ns
Peak Diode Recovery dv/dt (Note 3)
50
Power Dissipation
481
W
Derate Above 25°C
3.85
W/°C
−55 to +150
°C
PD
TJ, TSTG
Operating and Storage Temperature (Note 4)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Current is limited by bondwire configuration.
2. Starting TJ = 25°C, L = 25 mH, IAS = 9.5 A, VDD = 100 V during inductor charging and VDD = 0 V during time in avalanche.
3. ISD ≤ 26 A, di/dt ≤ 200 A/ms, VDD ≤ 380 V, starting TJ = 25°C.
4. RqJA is the sum of the junction−to−case and case−to−ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface of the drain pins. RqJC is guaranteed by design, while RqJA is determined by the board design. The maximum rating
presented here is based on mounting on a 1 in2 pad of 2oz copper.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
Thermal Resistance, Junction to Case, Max.
RqJA
Thermal Resistance, Junction to Ambient, Max. (Note 4)
Ratings
Unit
0.26
_C/W
40
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Reel Size
Tape Width
Quantity
FCH072N60F−F085
FCH072N60F
TO−247−3LD
−
−
30
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2
FCH072N60F−F085
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
600
−
−
V
OFF CHARACTERISTICS
BVDSS
IDSS
IGSS
Drain to Source Breakdown Voltage
VGS = 0 V, ID = 250 mA
Drain to Source Leakage Current
VDS = 600 V, VGS = 0 V, TJ = 25_C
−
−
10
mA
VDS = 600 V, VGS = 0 V, TJ = 150_C
(Note 5)
−
−
1
mA
VGS = ±20 V
−
−
±100
nA
3.0
4.0
5.0
V
Gate to Source Leakage Current
ON CHARACTERISTICS
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 mA
rDS(on)
Drain to Source On Resistance
VGS = 10 V, ID = 26 A, TJ = 25_C
−
62
72
mW
VGS = 10 V, ID = 26 A, TJ = 150_C
(Note 5)
−
154
195
mW
VDS = 100 V, VGS = 0 V, f = 1 MHz
−
6330
−
pF
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
−
199
−
pF
Crss
Reverse Transfer Capacitance
−
1.25
−
pF
Rg
Qg(TOT)
Gate Resistance
f = 1 MHz
−
0.46
−
W
Total Gate Charge
VDD = 380 V, ID = 26 A, VGS = 10 V
−
160
210
nC
Threshold Gate Charge
−
11
16
nC
Qgs
Gate to Source Gate Charge
−
34
−
nC
Qgd
Gate to Drain “Miller” Charge
−
67
−
nC
−
75
100
ns
Qg(th)
SWITCHING CHARACTERISTICS
ton
td(on)
tr
td(off)
tf
toff
Turn-On Time
Turn-On Delay Time
VDD = 380 V, ID = 26 A,
VGS = 10 V, RG = 4.7 W
−
44
−
ns
Rise Time
−
31
−
ns
Turn-Off Delay Time
−
128
−
ns
Fall Time
−
22
−
ns
Turn-Off Time
−
150
200
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Source to Drain Diode Voltage
ISD = 26 A, VGS = 0 V
−
−
1.2
V
Trr
Reverse Recovery Time
−
185
−
ns
Qrr
Reverse Recovery Charge
IF = 26 A, dISD/dt = 100 A/ms
VDD = 480 V
−
1515
−
nC
VSD
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. The maximum value is specified by design at TJ = 150°C. Product is not tested to this condition in production.
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3
FCH072N60F−F085
1.2
60
1.0
50
VGS = 10 V
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
TYPICAL CHARACTERISTICS
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
40
30
20
10
0
150
25
50
TC, CASE TEMPERATURE (°C)
75
100
125
150
TC, CASE TEMPERATURE (°C)
Figure 1. Normalized Power Dissipation vs. Case
Temperature
Figure 2. Maximum Continuous Drain Current
vs. Case Temperature
NORMALIZED THERMAL
IMPEDANCE, ZqJC
2
1
0.1
DUTY CYCLE − DESCENDING ORDER
D = 0.50
0.20
0.10
0.05
0.02
0.01
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t 1/t 2
PEAK T J = PDM x Z qJC x RqJC + TC
SINGLE PULSE
0.01
10−5
10−4
10−3
10−2
10−1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
VGS = 10 V
T C = 25 o C
IDM, PEAK CURRENT (A)
FOR TEMPERATURES
ABOVE 25 o C DE RATE PEAK
CURRENT AS FOLLOWS:
I = I2
100
10
ƪǸ
150 * T C
125
ƫ
SINGLE PULSE
10−5
10−4
10−3
t, RECTANGULAR PULSE DURATION (s)
Figure 4. Peak Current Capability
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4
10−2
10−1
FCH072N60F−F085
TYPICAL CHARACTERISTICS (continued)
150
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
1000
10 ms
100
100 ms
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY RDS(on)
1
1 ms
10 ms
100 ms
SINGLE PULSE
TJ = MAX RATED
120
1
90
TJ = 150oC
60
TJ = 25oC
30
10
100
0
1000
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
TJ = −55oC
200
150
VGS = 0 V
100
10
TJ = 150 oC
TJ = −55oC
TJ = 25 oC
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
120
15 V Top
10 V
8V
7V
6V
5.5V
5V
Bottom
90
60
30
0
1.4
VGS
5V
0
rDS(on), DRAIN TO SOURCE
ON−RESISTANCE (mW)
VGS
15 V Top
10 V
8V
7V
6V
5.5V
5V
Bottom
40
8
12
20
0
4
8
12
16
20
PULSE DURATION = 80 m s
DUTY CYCLE = 0.5% MAX
ID = 26 A
250
200
TJ = 150 o C
150
100
50
TJ = 25o C
5V
0
16
Figure 8. Saturation Characteristics
300
80 m s PULSE WIDTH
TJ = 150 o C
60
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Forward Diode Characteristics
80
9
80 ms PULSE WIDTH
TJ = 25o C
VSD, BODY DIODE FORWARD VOLTAGE (V)
100
5
6
7
8
4
VGS, GATE TO SOURCE VOLTAGE(V)
3
Figure 6. Transfer Characteristics
ID, DRAIN CURRENT (A)
IS, REVERSE DRAIN CURRENT (A)
VDS = 20V
TC = 25 o C
0.1
ID, DRAIN CURRENT (A)
PULSE DURATION = 80 m s
DUTY CYCLE = 0.5% MAX
0
20
4
5
6
7
8
9
VGS, GATE TO SOURCE VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. RDSON vs. Gate Voltage
Figure 9. Saturation Characteristics
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5
10
FCH072N60F−F085
3.0
1.2
PULSE DURATION = 80 m s
DUTY CYCLE = 0.5% MAX
2.5
NORMALIZED GATE
THRESHOLD VOLTAGE
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
TYPICAL CHARACTERISTICS (continued)
2.0
1.5
1.0
ID = 26 A
VGS = 10 V
0.5
0.0
−80
−40
0
40
80
120
VGS = VDS
ID = 250 m A
1.1
1.0
0.9
0.8
0.7
0.6
160
0.5
−80
200
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Normalized Gate Threshold Voltage
vs. Temperature
Figure 11. Normalized RDSON vs. Junction
Temperature
100000
1.2
ID = 10 mA
CAPACITANCE (pF)
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
−40
1.1
1.0
0.9
Ciss
10000
1000
Coss
100
10
0.8
−80
−40
0
40
80
120
160
f = 1MHz
VGS = 0 V
1
0.1
200
Crss
1
10
100
1000
VDS, DRAIN TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 14. Capacitance vs. Drain to Source
Voltage
Figure 13. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
ID = 26 A
VDS = 240 V
21
8
VDS = 300 V
VDS = 360 V
Eoss, (mJ)
VGS, GATE TO SOURCE VOLTAGE(V)
28
10
6
4
14
7
2
0
0
0
30
60
90
120
150
180
0
100
200
300
400
500
600
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 15. Gate Charge vs. Gate to Source
Voltage
Figure 16. Eoss vs. Drain to Source Voltage
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6
FCH072N60F−F085
VGS
RL
Qg
VDS
VGS
Qgs
Qgd
DUT
IG = Const.
Charge
Figure 17. Gate Charge Test Circuit & Waveform
RL
VDS
VDS
90%
90%
90%
VDD
VGS
RG
VGS
DUT
VGS
10%
td(on)
10%
tr
tf
td(off)
ton
toff
Figure 18. Resistive Switching Test Circuit & Waveforms
L
E AS + 1 LI AS
2
VDS
BVDSS
ID
IAS
RG
VDD
DUT
VGS
2
ID(t)
VDD
VDS(t)
tp
tp
Figure 19. Unclamped Inductive Switching Test Circuit & Waveforms
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7
Time
FCH072N60F−F085
+
DUT
VDS
−
ISD
L
Driver
RG
Same Type
as DUT
VGS
− dv/dt controlled by RG
− ISD controlled by pulse period
D+
VGS
(Driver)
VDD
Gate Pulse Width
Gate Pulse Period
10 V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(DUT)
VDD
VSD
Body Diode
Forward Voltage Drop
Figure 20. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
FRFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
A
DATE 31 JAN 2019
A
E
P1
P
A2
D2
Q
E2
S
B
D
1
2
D1
E1
2
3
L1
A1
L
b4
c
(3X) b
0.25 M
(2X) b2
B A M
DIM
(2X) e
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX = Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
ZZ
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
A
A1
A2
b
b2
b4
c
D
D1
D2
E
E1
E2
e
L
L1
P
P1
Q
S
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
13.08
~
~
0.51 0.93 1.35
15.37 15.62 15.87
12.81
~
~
4.96 5.08 5.20
~
5.56
~
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
6.60 6.80 7.00
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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