FCH072N60F

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FCH072N60F N-Channel SuperFET® II FRFET® MOSFET 600 V, 52 A, 72 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. • Typ. RDS(on) = 65 mΩ • Ultra Low Gate Charge (Typ. Qg = 165 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 441 pF) • 100% Avalanche Tested • RoHS Compliant D G G D S TO-247 S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 9.5 A EAR Repetitive Avalanche Energy (Note 1) 4.8 mJ dv/dt Parameter FCH072N60F 600 - DC ±20 - AC (f > 1 Hz) - Continuous (TC = 25oC) - Pulsed A 33 (Note 1) 156 A (Note 2) 1128 mJ MOSFET dv/dt 100 Peak Diode Recovery dv/dt V ±30 52 - Continuous (TC = 100oC) (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL Unit V - Derate Above 25oC 50 V/ns 481 W 3.85 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case, Max. RθJA Thermal Resistance, Junction to Ambient, Max. ©2013 Fairchild Semiconductor Corporation FCH072N60F Rev. C5 FCH072N60F 0.26 40 1 Unit o C/W www.fairchildsemi.com FCH072N60F — N-Channel SuperFET® II FRFET® MOSFET December 2014 Part Number FCH072N60F Top Mark FCH072N60F Package TO-247 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain to Source Breakdown Voltage ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 10 mA, VGS = 0 V, TC = 25oC ID = 10 mA, VGS = 0 V, TC = 150oC ID = 10 mA, Referenced to 25oC VDS = 600 V, VGS = 0 V 600 - - 650 - - - 0.67 - - - 10 VDS = 480 V, VGS = 0 V, TC = 125oC - 163 - VGS = ±20 V, VDS = 0 V - - ±100 V V/oC μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA 3 - 5 V Static Drain to Source On Resistance VGS = 10 V, ID = 26 A - 65 72 mΩ gFS Forward Transconductance VDS = 20 V, ID = 26 A - 42 - S VDS = 100 V, VGS = 0 V, f = 1 MHz - 6510 8660 pF - 205 275 pF pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 1.5 2.5 Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz - 110 - pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 480 V, VGS = 0 V - 441 - pF Qg(tot) Total Gate Charge at 10V 165 215 nC Gate to Source Gate Charge VDS = 380 V, ID = 26 A, VGS = 10 V - Qgs - 36 - nC - 66 - nC - 0.78 - Ω - 43 96 ns - 38 86 ns - 140 290 ns - 25 60 ns Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance(G-S) (Note 4) f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380 V, ID = 26 A, VGS = 10 V, RG = 4.7 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 52 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 156 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 26 A - - 1.2 V trr Reverse Recovery Time 175 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 26 A, dIF/dt = 100 A/μs - 1.29 - μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 9.5 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 26 A, di/dt ≤ 200 A/μs, VDD ≤ 380 V, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2013 Fairchild Semiconductor Corporation FCH072N60F Rev. C5 2 www.fairchildsemi.com FCH072N60F — N-Channel SuperFET® II FRFET® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 200 300 VGS = 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V *Notes: 1. VDS = 10V 2. 250μs Pulse Test 100 ID, Drain Current[A] ID, Drain Current[A] 100 10 o 150 C 10 o 25 C *Notes: 1. 250μs Pulse Test o -55 C o 2. TC = 25 C 1 0.2 1 10 VVDS to Source Voltage [V] Drain-Source Voltage[V] DS,, Drain 1 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2 4 6 8 VV , ,Gate to Source Voltage [V] Gate-Source Voltage[V] GS GS 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.14 200 0.12 IS, Reverse Drain Current [A] RDS(ON) [Ω], Drain to Source On-Resistance 100 0.10 VGS = 10V 0.08 VGS = 20V 0.06 10 o 150 C o 25 C 1 *Notes: 1. VGS = 0V o 0.04 *Note: TC = 25 C 0 50 100 ID, Drain Current [A] 0.1 0.2 150 Figure 5. Capacitance Characteristics 1.6 VGS, Gate to Source Voltage [V] 10 Ciss 10000 Capacitances [pF] 2. 250μs Pulse Test 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 100000 1000 Coss 100 10 o -55 C *Note: 1. VGS = 0V 2. f = 1MHz Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 0.1 1 10 100 VVDS to Source Voltage [V] Drain-Source Voltage [V] DS,, Drain ©2013 Fairchild Semiconductor Corporation FCH072N60F Rev. C5 6 4 2 0 600 3 VDS = 120V VDS = 300V VDS = 480V 8 *Note: ID = 26A 0 30 60 90 120 150 Qg, Total Gate Charge [nC] 180 www.fairchildsemi.com FCH072N60F — N-Channel SuperFET® II FRFET® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain to Source On-Resistance BVDSS, [Normalized] Drain to Source Breakdown Voltage 1.15 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 10mA 0.90 0.85 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 0.5 0.0 -100 200 Figure 9. Maximum Safe Operating Area *Notes: 1. VGS = 10V 2. ID = 26A -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 300 60 10μs ID, Drain Current [A] ID, Drain Current [A] 100 100μs 1ms 10 10ms Operation in This Area is Limited by R DS(on) 1 DC *Notes: o 40 20 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0.1 0.1 1 10 100 VV , ,Drain to Source Voltage Drain-Source Voltage [V][V] DS DS 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Eoss vs. Drain to Source Voltage 28 EOSS, [μJ] 21 14 7 0 0 100 200 300 400 500 VDS, Drain to Source Voltage [V] ©2013 Fairchild Semiconductor Corporation FCH072N60F Rev. C5 600 4 www.fairchildsemi.com FCH072N60F — N-Channel SuperFET® II FRFET® MOSFET Typical Performance Characteristics (Continued) FCH072N60F — N-Channel SuperFET® II FRFET® MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve ZθJC (t), Thermal Response [o]C/W] Thermal Response [Zθ JC 0.5 0.5 0.1 0.2 PDM 0.1 *Notes: 0.05 0.02 t2 o 1. ZθJC(t) = 0.26 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * Zθ JC(t) 0.01 Single pulse 0.01 -5 10 t1 -4 10 -3 -2 10 10 Rectangular [sec] t , RectangularPulse PulseDuration Duration [sec] -1 10 0 10 1 ©2013 Fairchild Semiconductor Corporation FCH072N60F Rev. C5 5 www.fairchildsemi.com FCH072N60F — N-Channel SuperFET® II FRFET® MOSFET IG = const. Figure 13. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 14. Resistive Switching Test Circuit & Waveforms VGS Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms ©2013 Fairchild Semiconductor Corporation FCH072N60F Rev. C5 6 www.fairchildsemi.com FCH072N60F — N-Channel SuperFET® II FRFET® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2013 Fairchild Semiconductor Corporation FCH072N60F Rev. C5 7 www.fairchildsemi.com FCH072N60F — N-Channel SuperFET® II FRFET® MOSFET Mechanical Dimensions Figure 17. TO-247, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-003 ©2013 Fairchild Semiconductor Corporation FCH072N60F Rev. C5 8 www.fairchildsemi.com AccuPower™ AttitudeEngine™ Awinda® AX-CAP®* BitSiC™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED® Dual Cool™ EcoSPARK® EfficentMax™ ESBC™ ® ® Fairchild Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FPS™ F-PFS™ FRFET® Global Power ResourceSM GreenBridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ MotionGrid® MTi® MTx® MVN® mWSaver® OptoHiT™ OPTOLOGIC® OPTOPLANAR® ®* ® tm PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM® STEALTH™ SuperFET® SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS® SyncFET™ Sync-Lock™ TinyBoost® ® TinyBuck TinyCalc™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TranSiC™ TriFault Detect™ TRUECURRENT®* μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™ Xsens™ 仙童 ™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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