FCH104N60F

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FCH104N60F N-Channel SuperFET® II FRFET® MOSFET 600 V, 37 A, 104 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. • Typ. RDS(on) = 98 mΩ • Ultra Low Gate Charge (Typ. Qg = 107 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 109 pF) • 100% Avalanche Tested • RoHS Compliant D G G D S TO-247 S Absolute Maximum Ratings TC = 25 C unless otherwise noted. o Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage FCH104N60F 600 - DC Unit V ±20 - AC (f > 1 Hz) - Continuous (TC = 25oC) V ±30 37 ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 6.8 A EAR Repetitive Avalanche Energy (Note 1) 3.57 mJ dv/dt - Continuous (TC = 100oC) - Pulsed (Note 1) 111 A (Note 2) 809 mJ MOSFET dv/dt 100 Peak Diode Recovery dv/dt (Note 3) o (TC = 25 C) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL A 24 - Derate Above 25oC 50 V/ns 357 W 2.85 W/oC -55 to +150 oC 300 oC FCH104N60F Unit Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case, Max. RθJA Thermal Resistance, Junction to Ambient, Max. ©2013 Fairchild Semiconductor Corporation FCH104N60F Rev. C3 0.35 40 1 o C/W www.fairchildsemi.com FCH104N60F — N-Channel SuperFET® II FRFET® MOSFET December 2014 Part Number FCH104N60F Top Mark FCH104N60F Package TO-247 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain to Source Breakdown Voltage ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 10 mA, VGS = 0 V, TC = 25oC ID = 10 mA, VGS = 0 V, TC = 150oC ID = 10 mA, Referenced to 25oC VDS = 600 V, VGS = 0 V 600 - - 650 - - - 0.67 - - - 10 VDS = 480 V, VGS = 0 V, TC = 125oC - 16 - VGS = ±20 V, VDS = 0 V - - ±100 V V/oC μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA 3 - 5 V Static Drain to Source On Resistance VGS = 10 V, ID = 18.5 A - 98 104 mΩ gFS Forward Transconductance VDS = 20 V, ID = 18.5 A - 47 - S VDS = 100 V, VGS = 0 V, f = 1 MHz - 4475 5950 pF - 135 180 pF pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 1.5 2.5 Coss Output Capacitance VDS = 380 V, VGS = 0V, f = 1 MHz - 75 - pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 480 V, VGS = 0 V - 109 - pF Qg(tot) Total Gate Charge at 10V 107 139 nC Gate to Source Gate Charge VDS = 380 V, ID = 18.5 A, VGS = 10 V - Qgs - 25 - nC Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance (Note 4) f = 1 MHz - 44 - nC - 0.87 - Ω - 34 78 ns - 24 58 ns - 98 206 ns - 5 20 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380 V, ID = 18.5 A, VGS = 10 V, RG = 4.7 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 37 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 111 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 18.5 A - - 1.2 V trr Reverse Recovery Time - 144 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 18.5 A, dIF/dt = 100 A/μs - 0.91 - μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 6.8 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 18.5 A, di/dt ≤ 200 A/μs, VDD ≤ 380 V, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2013 Fairchild Semiconductor Corporation FCH104N60F Rev. C3 2 www.fairchildsemi.com FCH104N60F — N-Channel SuperFET® II FRFET® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics 200 VGS = 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V 100 ID, Drain Current[A] 100 ID, Drain Current[A] Figure 2. Transfer Characteristics 10 o 150 C o 25 C o -55 C 10 *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 2. TC = 25 C 1 0.1 1 1 10 VDS Drain-Source VDS , ,Drain to SourceVoltage[V] Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 5 6 7 8 VGS, Gate to Source Voltage[V] 200 100 IS, Reverse Drain Current [A] 0.20 0.18 0.16 VGS = 10V 0.14 0.12 VGS = 20V 0.10 o 150 C 10 o 25 C 1 *Notes: 1. VGS = 0V o 0.08 *Note: TC = 25 C 0 30 60 90 ID, Drain Current [A] 0.1 0.2 120 Figure 5. Capacitance Characteristics VGS, Gate to Source Voltage [V] Ciss 1000 Coss 100 1 0.1 0.1 1.6 10 10000 10 2. 250μs Pulse Test 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 100000 Capacitances [pF] 9 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.22 RDS(ON) [Ω], Drain to Source On-Resistance 4 *Note: 1. VGS = 0V 2. f = 1MHz Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 10 100 VVDS to Source Voltage Drain-Source Voltage [V][V] DS,, Drain ©2013 Fairchild Semiconductor Corporation FCH104N60F Rev. C3 6 4 2 0 600 3 VDS = 120V VDS = 300V VDS = 480V 8 *Note: ID = 18.5A 0 30 60 90 Qg, Total Gate Charge [nC] 120 www.fairchildsemi.com FCH104N60F — N-Channel SuperFET® II FRFET® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain to Source On-Resistance BVDSS, [Normalized] Drain to Source Breakdown Voltage 1.15 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 10mA 0.90 0.85 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 0.5 0.0 -100 200 Figure 9. Maximum Safe Operating Area *Notes: 1. VGS = 10V 2. ID = 18.5A -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 40 300 10μs 100 ID, Drain Current [A] ID, Drain Current [A] 100μs 1ms 10 Operation in This Area is Limited by R DS(on) 1 10ms DC *Notes: o 30 20 10 1. TC = 25 C o 0.1 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS , Drain VDS , Drainto toSource Source Voltage Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Eoss vs. Drain to Source Voltage 20 EOSS, [μJ] 16 12 8 4 0 0 100 200 300 400 500 VDS, Drain to Source Voltage [V] ©2013 Fairchild Semiconductor Corporation FCH104N60F Rev. C3 600 4 www.fairchildsemi.com FCH104N60F — N-Channel SuperFET® II FRFET® MOSFET Typical Performance Characteristics (Continued) FCH104N60F — N-Channel SuperFET® II FRFET® MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve θJC o ZθJC (t), Thermal Response Thermal Response [Z [ ]C/W] 1 0.5 0.1 0.2 PDM 0.1 t1 0.05 0.01 0.02 o 1. ZθJC(t) = 0.35 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 1E-3 0.001 -5 10 ©2013 Fairchild Semiconductor Corporation FCH104N60F Rev. C3 t2 *Notes: 0.01 -4 10 -3 -2 -1 10 10 10 Pulse Duration [sec] tRectangular 1, Rectangular Pulse Duration [sec] 5 1 10 www.fairchildsemi.com FCH104N60F — N-Channel SuperFET® II FRFET® MOSFET IG = const. Figure 13. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 14. Resistive Switching Test Circuit & Waveforms VGS Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms ©2013 Fairchild Semiconductor Corporation FCH104N60F Rev. C3 6 www.fairchildsemi.com FCH104N60F — N-Channel SuperFET® II FRFET® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2013 Fairchild Semiconductor Corporation FCH104N60F Rev. C3 7 www.fairchildsemi.com FCH104N60F — N-Channel SuperFET® II FRFET® MOSFET Mechanical Dimensions Figure 17. TO-247, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-003 ©2013 Fairchild Semiconductor Corporation FCH104N60F Rev. C3 8 www.fairchildsemi.com AccuPower™ AttitudeEngine™ Awinda® AX-CAP®* BitSiC™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED® Dual Cool™ EcoSPARK® EfficentMax™ ESBC™ ® ® Fairchild Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FPS™ F-PFS™ FRFET® Global Power ResourceSM GreenBridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ MotionGrid® MTi® MTx® MVN® mWSaver® OptoHiT™ OPTOLOGIC® OPTOPLANAR® ®* ® tm PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM® STEALTH™ SuperFET® SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS® SyncFET™ Sync-Lock™ TinyBoost® ® TinyBuck TinyCalc™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TranSiC™ TriFault Detect™ TRUECURRENT®* μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™ Xsens™ 仙童 ™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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