MOSFET – N-Channel,
SUPERFET II, FRFET
600 V, 37 A, 104 mW
FCH104N60F-F085
Description
SUPERFET® II MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This technology is tailored to minimize
conduction loss, provide superior switching performance, dv/dt rate
and higher avalanche energy. Consequently SUPERFET II is very
well suited for the Soft switching and Hard Switching topologies like
High Voltage Full Bridge and Half Bridge DC−DC, Interleaved Boost
PFC, Boost PFC for HEV−EV automotive.
SUPERFET II FRFET® MOSFET’s optimized body diode reverse
recovery performance can remove additional component and improve
system reliability.
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VDSS
RDS(ON) MAX
ID MAX
600 V
104 mW
37 A
D
G
Features
•
•
•
•
•
Typical RDS(on) = 91 mW at VGS = 10 V, ID = 18.5 A
Typical Qg(tot) = 109 nC at VGS = 10 V, ID = 18.5 A
UIS Capability
Qualified to AEC Q101 and PPAP Capable
This Device is Pb−Free and is RoHS Compliant
S
N-Channel MOSFET
Applications
G
• Automotive On Board Charger
• Automotive DC/DC Converter for HEV
D
S
TO−247
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FCH
104N60F
$Y
&Z
&3
&K
FCH104N60F
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
December, 2020 − Rev. 3
1
Publication Order Number:
FCH104N60F−F085/D
FCH104N60F−F085
MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
Symbol
Ratings
Unit
VDSS
Drain to Source Voltage
Parameter
600
V
VGS
Gate to Source Voltage
±20
V
37
24
A
ID
Drain Current − Continuous (VGS = 10) (Note 1)
TC = 25°C
TC = 100°C
Pulsed Drain Current
See Fig. 4
EAS
Single Pulsed Avalanche Rating (Note 2)
809
mJ
dv/dt
MOSFET dv/dt
100
V/ns
Peak Diode Recovery dv/dt (Note 3)
50
PD
TJ, TSTG
Power Dissipation
357
W
Derate Above 25°C
2.85
W/°C
−55 to +150
°C
Operating and Storage Temperature
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Current is limited by bondwire configuration.
2. Starting TJ = 25°C, L = 35 mH, IAS = 6.8 A, VDD = 100 V during inductor charging and VDD = 0 V during time in avalanche.
3. ISD ≤ 18.5 A, di/dt ≤ 200 A/ms, VDD ≤ 380 V, starting TJ = 25°C.
4. RqJA is the sum of the junction−to−case and case−to−ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface of the drain pins. RqJC is guaranteed by design, while RqJA is determined by the board design. The maximum rating
presented here is based on mounting on a 1 in2 pad of 2oz copper.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
Maximum Thermal Resistance, Junction to Case
RqJA
Maximum Thermal Resistance, Junction to Ambient
Ratings
Unit
0.35
_C/W
40
PACKAGE MARKING AND ORDERING INFORMATION
Device
Device Marking
Package
Reel Size
Tape Width
Quantity
FCH104N60F−F085
FCH104N60F
TO−247
−
−
30
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2
FCH104N60F−F085
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
600
−
−
V
OFF CHARACTERISTICS
BVDSS
IDSS
IGSS
Drain to Source Breakdown Voltage
VGS = 0 V, ID = 250 mA
Drain to Source Leakage Current
VDS = 600 V, VGS = 0 V, TJ = 25_C
−
−
10
mA
VDS = 600 V, VGS = 0 V, TJ = 150_C
(Note 5)
−
−
1
mA
VGS = ±20 V
−
−
±100
nA
Gate to Source Leakage Current
ON CHARACTERISTICS
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 mA
3
4
5
V
rDS(on)
Drain to Source On Resistance
VGS = 10 V, ID = 18.5 A, TJ = 25_C
−
91
104
mW
VGS = 10 V, ID = 18.5 A, TJ = 150_C
(Note 5)
−
217
275
mW
VDS = 100 V, VGS = 0 V, f = 1 MHz
−
4302
−
pF
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
−
134
−
pF
Crss
Reverse Transfer Capacitance
−
1.7
−
pF
Rg
Qg(TOT)
Gate Resistance
f = 1 MHz
−
0.49
−
W
Total Gate Charge
VDD = 380 V, ID = 18.5 A, VGS = 10 V
−
109
139
nC
Threshold Gate Charge
−
8
11
nC
Qgs
Gate to Source Gate Charge
−
23
−
nC
Qgd
Gate to Drain “Miller” Charge
−
46
−
nC
−
58
78
ns
Qg(th)
SWITCHING CHARACTERISTICS
ton
td(on)
tr
td(off)
tf
toff
Turn-On Time
Turn-On Delay Time
VDD = 380 V, ID = 18.5 A,
VGS = 10 V, RG = 4.7 W
−
35
−
ns
Rise Time
−
23
−
ns
Turn-Off Delay Time
−
94
−
ns
Fall Time
−
5
−
ns
Turn-Off Time
−
98
131
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Source to Drain Diode Voltage
ISD = 18.5 A, VGS = 0 V
−
−
1.2
V
Trr
Reverse Recovery Time
−
162
−
ns
Qrr
Reverse Recovery Charge
IF = 18.5 A, dISD/dt = 100 A/ms
VDD = 480 V
−
1223
−
nC
VSD
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. The maximum value is specified by design at TJ = 150°C. Product is not tested to this condition in production.
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3
FCH104N60F−F085
1.2
ID, DRAIN CURRENT (A)
50
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
VGS = 10 V
40
30
20
10
0
125 150
25
50
TC, CASE TEMPERATURE (°C)
75
100
125
150
TC, CASE TEMPERATURE (°C)
Figure 1. Normalized Power Dissipation vs. Case
Temperature
Figure 2. Maximum Continuous Drain Current
vs. Case Temperature
2
NORMALIZED THERMAL
IMPEDANCE, ZqJC
1
0.1
DUTY CYCLE − DESCENDING ORDER
D = 0.50
0.20
0.10
0.05
0.02
0.01
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZqJC x RqJC + TC
SINGLE PULSE
0.01
10−5
10−3
10−4
10−2
10−1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
VGS = 10 V
IDM, PEAK CURRENT (A)
POWER DISSIPATION MULTIPLIER
TYPICAL CHARACTERISTICS
TC = 25°C
FOR TEMPERATURES
ABOVE 25°C DERATE PEAK
CURRENT AS FOLLOWS:
I = I2
100
SINGLE PULSE
10
10−5
10−4
10−3
t, RECTANGULAR PULSE DURATION (s)
Figure 4. Peak Current Capability
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4
10−2
ƪǸ
150 * T C
125
ƫ
10−1
FCH104N60F−F085
TYPICAL CHARACTERISTICS (continued)
150
100
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
1000
10 ms
10
100 ms
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY RDS(on)
0.1
1 ms
10 ms
SINGLE PULSE
TJ = MAX RATED
TC = 25°C
100 ms
120
90
TJ = 150°C
60
10
100
TJ = 25°C
30
TJ = −55°C
0.01
1
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VDS = 20 V
0
1000
3
4
5
6
7
8
VGS, GATE TO SOURCE VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 6. Transfer Characteristics
100
VGS = 0 V
100
ID, DRAIN CURRENT (A)
IS, REVERSE DRAIN CURRENT (A)
Figure 5. Forward Bias Safe Operating Area
200
10
TJ = 150°C
TJ = −55°C
TJ = 25°C
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
80
VGS
60
15 V Top
10 V
8V
7V
6V
5.5V
5 V Bottom
40
20
0
1.4
80 ms PULSE WIDTH
TJ = 25°C
5V
0
VGS
rDS(on), DRAIN TO SOURCE
ON−RESISTANCE (mW)
ID, DRAIN CURRENT (A)
500
80 ms PULSE WIDTH
TJ = 25°C
15 V Top
10 V
8V
7V
6V
5.5 V
5V Bottom
40
30
20
10
0
5V
0
4
8
12
16
8
12
16
20
Figure 8. Forward Diode Characteristics
Figure 7. Forward Diode Characteristics
50
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
60
9
ID = 18.5 A
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
400
300
TJ = 150°C
200
100
TJ = 25°C
0
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
0
5
6
7
8
9
VGS, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. RDSON vs. Gate Voltage
Figure 9. Saturation Characteristics
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5
10
FCH104N60F−F085
3.0
2.5
1.2
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
NORMALIZED GATE
THRESHOLD VOLTAGE
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
TYPICAL CHARACTERISTICS (continued)
2.0
1.5
1.0
ID = 18.5 A
VGS = 10 V
0.5
0.0
−80
−40
0
40
80
120
160
1.0
0.9
0.8
0.7
0.6
200
VGS = VDS
ID = 250 mA
1.1
−80
0
40
80
120
160
200
Figure 12. Normalized Gate Threshold Voltage
vs. Temperature
Figure 11. Normalized RDSON vs. Junction
Temperature
1.15
100000
ID = 10 mA
1.10
CAPACITANCE (pF)
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
−40
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
1.05
1.00
0.95
Ciss
10000
1000
Coss
100
10
0.90
Crss
1
0.85
−80
−40
0
40
80
120
160
f = 1 MHz
VGS = 0 V
0
0.1
200
TJ, JUNCTION TEMPERATURE (°C)
1
10
100
1000
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
Figure 14. Capacitance vs. Drain to Source
Voltage
10
ID = 18.5 A
8
16
VDS = 240 V
VDS = 300 V
VDS = 360 V
Eoss, (mJ)
VGS, GATE TO SOURCE VOLTAGE (V)
20
6
12
8
4
4
2
0
0
30
60
90
0
120
Qg, GATE CHARGE (nC)
0
100
200
300
400
500
600
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 16. Eoss vs. Drain to Source Voltage
Figure 15. Gate Charge vs. Gate to Source
Voltage
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6
FCH104N60F−F085
VGS
RL
Qg
VDS
VGS
Qgs
Qgd
DUT
IG = Const.
Charge
Figure 17. Gate Charge Test Circuit & Waveform
RL
VDS
VDS
90%
90%
90%
VDD
VGS
RG
VGS
DUT
VGS
10%
td(on)
10%
tr
tf
td(off)
ton
toff
Figure 18. Resistive Switching Test Circuit & Waveforms
L
E AS + 1 LI AS
2
VDS
BVDSS
ID
IAS
RG
VDD
DUT
VGS
2
ID(t)
VDD
VDS(t)
tp
tp
Figure 19. Unclamped Inductive Switching Test Circuit & Waveforms
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7
Time
FCH104N60F−F085
+
DUT
VDS
−
ISD
L
Driver
RG
Same Type
as DUT
VGS
− dv/dt controlled by RG
− ISD controlled by pulse period
D+
VGS
(Driver)
VDD
Gate Pulse Width
Gate Pulse Period
10 V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(DUT)
VDD
VSD
Body Diode
Forward Voltage Drop
Figure 20. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
FRFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
A
DATE 31 JAN 2019
A
E
P1
P
A2
D2
Q
E2
S
B
D
1
2
D1
E1
2
3
L1
A1
L
b4
c
(3X) b
0.25 M
(2X) b2
B A M
DIM
(2X) e
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX = Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
ZZ
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
A
A1
A2
b
b2
b4
c
D
D1
D2
E
E1
E2
e
L
L1
P
P1
Q
S
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
13.08
~
~
0.51 0.93 1.35
15.37 15.62 15.87
12.81
~
~
4.96 5.08 5.20
~
5.56
~
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
6.60 6.80 7.00
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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