FCH110N65F-F155

N-Channel SuperFET® II FRFET® MOSFET 650 V, 35 A, 110 mΩ Features Description • 700 V @ TJ = 150°C SuperFET® II MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. • Typ. RDS(on) = 96 mΩ (Typ.) • Ultra Low Gate Charge (Typ. Qg = 98 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 464 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD / LED / PDP TV • Telecom / Server Power Supplies • Solar Inverter • AC - DC Power Supply D G G D S TO-247 long leads Absolute Maximum Ratings TC = Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current 25oC S unless otherwise noted. Parameter FCH110N65F-F155 650 - DC - AC ±20 (f > 1 Hz) - Continuous (TC = 25oC) V ±30 35 - Continuous (TC = 100oC) A 24 IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 8 A EAR Repetitive Avalanche Energy (Note 1) 3.57 mJ dv/dt - Pulsed Unit V 105 A (Note 2) 809 mJ MOSFET dv/dt 100 Peak Diode Recovery dv/dt (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL (Note 1) - Derate Above 25oC V/ns 50 357 W 2.86 W/oC o -55 to +150 C 300 oC FCH110N65F-F155 Unit Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case, Max. RθJA Thermal Resistance, Junction to Ambient, Max. ©2014 Semiconductor Components Industries, LLC. September-2017, Rev. 3 0.35 40 o C/W Publication Order Number: FCH110N65F-F155/D FCH110N65F — N-Channel SuperFET® II FRFET® MOSFET FCH110N65F Part Number FCH110N65F-F155 Top Mark FCH110N65F Package TO-247G03 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain to Source Breakdown Voltage ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current VGS = 0 V, ID = 10 mA, TJ = 25°C 650 - - VGS = 0 V, ID = 10 mA, TJ = 150°C 700 - - - 0.72 - ID = 10 mA, Referenced to 25oC VDS = 650 V, VGS = 0 V - - 10 VDS = 520 V, TC = 125oC - 110 - VGS = ±20 V, VDS = 0 V - - ±100 V V/oC μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 3.5 mA 3 - 5 V Static Drain to Source On Resistance - 96 110 mΩ gFS Forward Transconductance VGS = 10 V, ID = 17.5 A VDS = 20 V, ID = 17.5 A - 30 - S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz Coss(eff.) Effective Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance - 3680 4895 pF - 110 145 pF - 0.65 - pF - 65 - pF VDS = 0 V to 400 V, VGS = 0 V - 464 - pF VDS = 380 V, ID = 17.5 A, VGS = 10 V - 98 145 nC - 20 - nC - 43 - nC - 0.7 - Ω - 31 72 ns - 21 52 ns - 89 188 ns - 5.7 21 ns VDS = 100 V, VGS = 0 V, f = 1 MHz (Note 4) f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380 V, ID = 17.5 A, VGS = 10 V, Rg = 4.7 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 35 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 105 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 17.5 A - - 1.2 V trr Reverse Recovery Time - 133 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 17.5 A, dIF/dt = 100 A/μs - 0.67 - μC Notes: 1. Repetitive rating: pulse width limited by maximum junction temperature. 2. IAS = 8 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 17.5 A, di/dt ≤ 200 A/μs, VDD ≤ 380 V, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 2 FCH110N65F — N-Channel SuperFET® II FRFET® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 200 VGS = 10.0V 8.0V 100 7.0V 6.5V 6.0V 5.5V *Notes: 1. VDS = 20V 2. 250μs Pulse Test 100 ID, Drain Current[A] ID, Drain Current[A] 200 10 o 150 C 10 o 25 C *Notes: 1. 250μs Pulse Test o -55 C o 2. TC = 25 C 1 0.3 1 10 VDS, Drain-Source Voltage[V] 1 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 5 6 7 VGS, Gate-Source Voltage[V] IS, Reverse Drain Current [A] 200 100 0.20 0.15 VGS = 10V 0.10 VGS = 20V 10 o 150 C 1 o 25 C 0.1 0.01 *Notes: 1. VGS = 0V o *Note: TC = 25 C 0.05 0 20 40 60 ID, Drain Current [A] 80 100 0.001 0.0 Figure 5. Capacitance Characteristics 10 VGS, Gate-Source Voltage [V] Capacitances [pF] 10000 Ciss 1000 Coss 100 *Note: 1. VGS = 0V 2. f = 1MHz 10 Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 0.1 0.1 1 10 100 VDS, Drain-Source Voltage [V] 2. 250μs Pulse Test 0.3 0.6 0.9 1.2 1.5 VSD, Body Diode Forward Voltage [V] 1.8 Figure 6. Gate Charge Characteristics 100000 1 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.25 RDS(ON) [Ω], Drain-Source On-Resistance 3 VDS = 130V 8 www.onsemi.com 3 VDS = 325V VDS = 520V 6 4 2 0 660 *Note: ID = 17.5A 0 20 40 60 80 Qg, Total Gate Charge [nC] 100 FCH110N65F — N-Channel SuperFET® II FRFET® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 RDS(on), [Normalized] Drain-Source On-Resistance 1.10 *Notes: 1. VGS = 0V 2. ID = 10mA 1.05 1.00 0.95 0.90 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 -50 0 50 100 150 o TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 300 40 100 ID, Drain Current [A] *Notes: 1. VGS = 10V 2. ID = 17.5A 0.5 -100 200 200 10μs 100μs 10 ID, Drain Current [A] BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.15 1ms DC 1 Operation in This Area is Limited by R DS(on) *Notes: o 1. TC = 25 C 0.1 30 20 10 o 2. TJ = 150 C 3. Single Pulse 0.01 0.1 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 11. Eoss vs. Drain to Source Voltage 20 EOSS, [μJ] 16 12 8 4 0 0 132 264 396 528 VDS, Drain to Source Voltage [V] 660 www.onsemi.com 4 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 FCH110N65F — N-Channel SuperFET® II FRFET® MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve o ZθJC(t), Thermal Response [ C/W] 1 0.5 0.1 0.2 PDM 0.1 t1 0.05 0.01 0.02 o 1. ZθJC(t) = 0.35 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.001 -5 10 t2 *Notes: 0.01 -4 10 -3 -2 10 10 t1, Rectangular Pulse Duration [sec] www.onsemi.com 5 -1 10 1 FCH110N65F — N-Channel SuperFET® II FRFET® MOSFET Typical Performance Characteristics (Continued) FCH110N65F — N-Channel SuperFET® II FRFET® MOSFET IG = const. Figure 13. Gate Charge Test Circuit & Waveform VDS RG V 10V GS RL VDS 90% VDD VGS VGS DUT 10% td(on) tr t on td(off) tf t off Figure 14. Resistive Switching Test Circuit & Waveforms VGS Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 6 + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 7 FCH110N65F — N-Channel SuperFET® II FRFET® MOSFET DUT FCH110N65F — N-Channel SuperFET® II FRFET® MOSFET Mechanical Dimensions Figure 17. TO-247, Molded, 3-Lead, Jedec AB Long Leads Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. 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