MOSFET – N-Channel,
SUPERFET II, FRFET
650 V, 35 A, 110 mW
FCH110N65F
Description
SUPERFET® II MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This technology is tailored to minimize
conduction loss, provide superior switching performance, dv/dt rate
and higher avalanche energy. Consequently, SUPERFET II MOSFET
is very suitable for the switching power applications such as PFC,
server/telecom power, FPD TV power, ATX power and industrial
power applications. SUPERFET II FRFET® MOSFET’s optimized
body diode reverse recovery performance can remove additional
component and improve system reliability.
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VDS
RDS(ON) MAX
ID MAX
650 V
110 m @ 10 V
35 A
D
Features
•
•
•
•
•
•
G
700 V @ TJ = 150°C
Typ. RDS(on)) = 96 m (Typ.)
Ultra Low Gate Charge (Typ. Qg = 98 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 464 pF)
100% Avalanche Tested
This Device is Pb−Free and is RoHS Compliant
S
N-CHANNEL MOSFET
S
D
G
Applications
•
•
•
•
LCD / LED / PDP TV
Solar Inverter
Telecom, Server Power Supplies
AC−DC Power Supply
TO−247−3LD
CASE 340CH
MARKING DIAGRAM
$Y&Z&3&K
FCH
110N65F
$Y
&Z
&3
&K
FCH110N65F
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
October, 2020 − Rev. 4
1
Publication Order Number:
FCH110N65F/D
FCH110N65F
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
VDSS
Drain to Source Voltage
VGSS
Gate to Source Voltage
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy (Note 2)
IAR
Avalanche Current (Note 1)
EAR
dv/dt
PD
TJ, TSTG
TL
Unit
650
V
±20
V
−DC
−AC
ID
FCH110N65F−F155
(f > 1 Hz)
±30
−Continuous (TC = 25°C)
35
−Continuous (TC = 100°C)
24
−Pulsed (Note 1)
A
105
A
809
mJ
8
A
Repetitive Avalanche Energy (Note 1)
3.57
mJ
MOSFET dv/dt
100
V/ns
Peak Diode Recovery dv/dt (Note 3)
50
Power Dissipation
(TC = 25°C)
357
W
−Derate Above 25°C
2.86
W/°C
−55 to + 150
°C
300
°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, ⅛ from Case for 5 Seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. IAS = 8 A, RG = 25 , Starting TJ = 25°C
3. ISD ≤ 17.5 A, di/dt ≤ 200 A/s, VDD ≤ 380 V, Starting TJ = 25 °C.
THERMAL CHARACTERISTICS
Symbol
Parameter
RJC
Thermal Resistance, Junction to Case, Max.
RJA
Thermal Resistance, Junction to Ambient, Max.
FCH110N65F−F155
Unit
0.35
°C/W
40
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FCH110N65F−F155
FCH110N65F
TO−247−3LD
Tube
N/A
N/A
30 Units
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2
FCH110N65F
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
VGS = 0 V, ID = 10 mA, TJ = 25°C
650
−
−
V
VGS = 0 V, ID = 10 mA, TJ = 150°C
700
−
−
0.72
−
V/°C
A
OFF CHARACTERISTICS
BVDSS
Drain to Source Breakdown Voltage
BVDSS/
TJ
Breakdown Voltage Temperature
Coefficient
ID = 10 mA, Referenced to 25°C
−
IDSS
Zero Gate Voltage Drain Current
VDS = 650 V, VGS = 0 V
−
−
10
VDS = 520 V, TC = 125°C
−
110
−
VGS = ±20 V, VDS = 0 V
−
−
±100
nA
IGSS
Gate to Body Leakage Current
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 3.5 mA
3
−
5
V
RDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 17.5 A
−
96
110
m
Forward Transconductance
VDS = 20 V, ID = 17.5 A
−
30
−
S
VDS = 100 V, VGS = 0 V,
f = 1 MHz
−
3680
4895
pF
−
110
145
pF
−
0.65
−
pF
−
pF
gFS
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS = 380 V, VGS = 0 V, f = 1 MHz
−
65
Effective Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
−
464
−
pF
Total Gate Charge at 10 V
VDD = 380 V, ID = 17.5 A,
VGS = 10 V
(Note 4)
−
98
145
nC
−
20
−
nC
−
43
−
nC
f = 1 MHz
−
0.7
−
VDD = 380 V, ID = 17.5 A,
VGS = 10 V, RG = 4.7
(Note 4)
−
31
72
ns
−
21
52
ns
Coss(eff.)
Qg(tot)
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller”Charge
ESR
Equivalent Series Resistance
SWITCHING CHARACTERISTICS
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
−
89
188
ns
Turn-Off Fall Time
−
5.7
21
ns
Maximum Continuous Drain to Source Diode Forward Current
−
−
35
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
−
−
105
A
VSD
tf
DRAIN-SOURCE DIODE CHARACTERISTICS
IS
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 17.5 A
−
−
1.2
V
trr
Reverse Recovery Time
−
133
−
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 17.5 A,
dIF/dt = 100 A/s
−
0.67
−
C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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3
FCH110N65F
TYPICAL PERFORMANCE CHARACTERISTICS
200
10
150°C
10
25°C
−55°C
*Notes:
1. 250 s Pulse Test
2. TC = 25°C
1
0.3
*Notes:
1. VDS = 20 V
2. 250 s Pulse Test
100
ID, Drain Current (A)
100
ID, Drain Current (A)
200
VGS = 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
1
10
1
3
20
8
200
100
0.25
IS, Reverse Drain Current (A)
RDS(ON), Drain−Source On−Resistance ()
7
Figure 2. Transfer Characteristics
0.20
0.15
VGS = 10 V
0.10
VGS = 20 V
*Note: TC = 25°C
0
20
40
60
80
10
1
25°C
0.1
*Notes:
1. VGS = 0 V
2. 250 s Pulse Test
0.01
0.001
100
150°C
0.0
ID, Drain Current (A)
VGS, Gate−Source Voltage (V)
10
Ciss
1000
Coss
100
*Note:
1. VGS = 0 V
2. f = 1 MHz
10
1
Crss
Ciss = Cgs + Cgd (Cds = Shorted)
Coss = Cds + Cgd
Crss = Cgd
0.1
0.1
1
10
0.6
0.9
1.2
1.8
1.5
Figure 4. Body Diode Forward Voltage Variation
vs. Source Current and Temperature
100000
10000
0.3
VSD, Body Diode Forward Voltage (V)
Figure 3. On−Resistance Variation vs. Drain
Current and Gate Voltage
Capacitance (pF)
6
VGS, Gate−Source Voltage (V)
Figure 1. On−Region Characteristics
0.05
5
4
VDS, Drain−Source Voltage (V)
100
8
VDS, Drain−Source Voltage (V)
VDS = 130 V
VDS = 325 V
6
VDS = 520 V
4
2
0
700
*Note: ID = 17.5 A
0
80
20
40
60
Qg, Total Gate Charge (nC)
100
Figure 6. Gate Charge Characteristics
Figure 5. Capacitance Characteristics
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4
FCH110N65F
TYPICAL PREFORMANCE CHARACTERISTICS (continued)
2.5
*Notes:
1. VGS = 0 V
2. ID = 10 mA
1.10
RDS(on), (Normalized)
Drain−Source On−Resistance
BVDSS, (Normalized)
Drain−Source Breakdown Voltage
1.15
1.05
1.00
0.95
0.90
−100
−50
0
50
100
150
2.0
*Notes:
1. VGS = 10 V
2. ID = 17.5 A
1.5
1.0
0.5
−100
200
TJ, Junction Temperature (°C)
100
150
200
40
100
10 s
100 s
10
ID, Drain Current (A)
ID, Drain Current (A)
50
Figure 8. On−Resistance Variation
vs. Temperature
300
1 ms
DC
Operation in This Area
is Limited by RDS(on)
*Notes:
1. TC = 25°C
2. TJ = 150°C
3. Single Pulse
1
0.1
0.01
0.1
1
10
100
16
12
8
4
264
396
528
25
50
75
100
125
TC, Case Temperature (°C)
Figure 10. Maximum Drain Current
vs. Case Temperature
20
132
20
0
1000
VDS, Drain−Source Voltage (V)
0
30
10
Figure 9. Maximum Safe Operating Area
EOSS (J)
0
TJ, Junction Temperature (°C)
Figure 7. Breakdown Voltage Variation
vs. Temperature
0
−50
660
VDS, Drain to Source Voltage (V)
Figure 11. EOSS vs. Drain to Source Voltage
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5
150
FCH110N65F
ZJC(t), Thermal Response (°C/W)
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
1
0.1
0.5
0.2
0.01
PDM
0.1
0.05
0.02
0.01
Single Pulse
0.001
10−5
10−4
t1
t2
*Notes:
1. ZJC(t) = 0.35°C/W Max.
2. Duty Factor, D = t1/t2
3. TJM − TC = PDM * ZJC(t)
10−3
10−2
10−1
t1, Rectangular Pulse Duration (sec)
Figure 12. Transient Thermal Response Curve
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6
1
FCH110N65F
VGS
RL
Qg
VDS
VGS
Qgs
Qgd
DUT
IG = Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
RL
VDS
VDS
90%
VDD
VGS
RG
VGS
DUT
VGS
10%
td(on)
tr
tf
td(off)
ton
toff
Figure 14. Resistive Switching Test Circuit & Waveforms
L
E AS + 1 LI AS
2
VDS
BVDSS
ID
IAS
RG
VDD
DUT
VGS
2
ID(t)
VDD
VDS(t)
tp
tp
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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7
Time
FCH110N65F
+
DUT
VDS
−
ISD
L
Driver
RG
Same Type
as DUT
VGS
− dv/dt controlled by RG
− ISD controlled by pulse period
D+
VGS
(Driver)
VDD
Gate Pulse Width
Gate Pulse Period
10 V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(DUT)
VDD
VSD
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
FRFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CH
ISSUE A
DATE 09 OCT 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13853G
TO−247−3LD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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