FCH190N65F_F085

MOSFET – N-Channel, SUPERFET) II, FRFET) 650 V, 20.6 A, 190 mW FCH190N65F-F085 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently SUPERFET II is very well suited for the Soft switching and Hard Switching topologies like High Voltage Full Bridge and Half Bridge DC−DC, Interleaved Boost PFC, Boost PFC for HEV−EV automotive. SUPERFET II, FRFET MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. www.onsemi.com VDS RDS(ON) MAX ID MAX 650 V 190 m @ 10 V 20.6 A D G Features • • • • • S Typ. RDS(on) = 148 m at VGS = 10 V, ID = 10 A Typ. Qg(tot) = 63 nC at VGS = 10 V, ID = 10 A UIS Capability AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant N-CHANNEL MOSFET S D G Applications • Automotive On Board Charger • Automotive DC/DC Converter for HEV TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FCH 190N65F $Y &Z &3 &K FCH190N65F−F085 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2014 November, 2019 − Rev. 3 1 Publication Order Number: FCH190N65F−F085/D FCH190N65F−F085 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value Unit VDSS Drain to Source Voltage 650 V VGSS Gate to Source Voltage ±20 V Drain Current − Continuous (VGS = 10) (Note 1) 20.6 A See Fig. 4 A ID Parameter Pulsed Drain Current EAS Single Pulsed Avalanche Rating (Note 2) 400 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 Power Dissipation 208 W Derate Above 25°C 1.67 W/°C −55 to + 150 °C PD TJ, TSTG Operating and Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Current is limited by bondwire configuration. 2. Starting TJ = 25 °C, L = 50 mH, IAS = 4 A, VDD = 100 V during inductor charging and VDD = 0 V during time in avalanche. 3. ISD ≤ 10 A, di/dt ≤ 200 A/s, VDD ≤ 380 V, Starting TJ = 25 °C. PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity FCH190N65F FCH190N65F−F085 TO−247−3 − − 30 Units THERMAL CHARACTERISTICS Symbol Value Unit RJC Thermal Resistance, Junction to Case, Max. Parameter 0.6 °C/W RJA Thermal Resistance, Junction to Ambient, Max. (Note 4) 40 4. RJA is the sum of the junction−to−case and case−to−ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design, while RJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. www.onsemi.com 2 FCH190N65F−F085 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Unit 650 − − V TJ = 25 °C − − 10 A TJ = 150 °C (Note 5) − − 1 mA VGS = ±20 V − − ±100 nA OFF CHARACTERISTICS BVDSS IDSS IGSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0 V Drain to Source Leakage Current VDS = 650 V, VGS = 0 V Gate to Source Leakage Current ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 A 3 − 5 V RDS(on) Drain to Source On Resistance ID = 27 A VGS = 10 V TJ = 25 °C − 148 190 m TJ = 150 °C (Note 5) − 346 401 m − 2447 3181 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg VDS = 25 V, VGS = 0 V, f = 1 MHz − 2345 3048 pF − 131 − pF Gate Resistance f = 1 MHz − 0.5 −  Qg(tot) Total Gate Charge − 63 82 nC Qg(th) Threshold Gate Charge VDD = 380 V, ID = 10 A, VGS = 10 V − 4.3 5.6 nC Qgs Gate to Source Gate Charge − 12.6 − nC Qgd Gate to Drain “Miller”Charge − 28 − nC − 40 100 ns − 25 − ns Rise Time − 14.5 − ns Turn-Off Delay Time − 64 − ns SWITCHING CHARACTERISTICS ton td(on) tr td(off) tf toff Turn−On Time Turn-On Delay Time VDD = 380 V, ID = 10 A, VGS = 10 V, RG = 4.7  Fall Time − 5 − ns Turn−Off Time − 69 158 ns DRAIN-SOURCE DIODE CHARACTERISTICS Source to Drain Diode Voltage VGS = 0 V, ISD = 10 A − − 1.2 V trr Reverse Recovery Time − 141 − ns Qrr Reverse Recovery Charge VDD = 520 V, IF = 10 A, dISD/dt = 100 A/s − 889 − nC VSD Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. The maximum value is specified by design at TJ = 150°C. Product is not tested to this condition in production. www.onsemi.com 3 FCH190N65F−F085 1.2 25 VGS = 10V ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 20 15 10 5 0 150 25 TC, CASE TEMPERATURE (°C) NORMALIZED THERMAL IMPEDANCE, ZJC Figure 1. Normalized Power Dissipation vs. Case Temperature 50 75 100 125 TC, CASE TEMPERATURE (°C) 150 Figure 2. Maximum Continuous Drain Current vs. Case Temperature 2 DUTY CYCLE − DESCENDING ORDER 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 P DM t1 t2 NOTES: DUTY FACTOR: D = t 1/t 2 PEAK T J = PDM x Z JC x R JC + TC SINGLE PULSE 0.01 −5 10 −4 −3 10 10 −2 −1 10 10 t, RECTANGULAR PULSE DURATION(s) Figure 3. Normalized Maximum Transient Thermal Impedance 500 IDM, PEAK CURRENT (A) POWER DISSIPATION MULTIPLIER TYPICAL CHARACTERISTICS T C = 25 o C VGS = 10V FOR TEMPERATURES ABOVE 25 o C DERATE PEAK CURRENT AS FOLLOWS: I=I 2 125 100 10 −5 10 150 − T C SINGLE PULSE −4 10 −3 10 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability www.onsemi.com 4 −2 10 −1 10 FCH190N65F−F085 TYPICAL CHARACTERISTICS 60 10 s 10 100 s 1 1ms OPERATION IN THIS AREA MAY BE LIMITED BY R DS(on) 0.1 10ms SINGLE PULSE TJ = MAX RATED 100ms TC = 25 o C 30 TJ = 25oC 10 TJ = −55oC 0 6 7 8 80s PULSE WIDTH TJ = 25o C 60 , DRAIN CURRENT (A) IS , REVERSE DRAIN CURRENT (A) 70 TJ = 150 oC 10 TJ = 25 o C TJ = −55oC VGS 50 15 V Top 10 V 8V 7V 6V 5.5 V 5 V Bottom 40 30 20 10 0.1 0.0 0.3 0.6 0.9 1.2 0 1.5 5V 0 VSD , BODY DIODE FORWARD VOLTAGE (V) 40 1000 35 RDS(on), DRAIN TO SOURCE ON−RESISTANCE (m) 80s PULSE WIDTH TJ = 150o C VGS 30 15 V Top 10 V 8V 7V 6V 5.5 V 5 V Bottom 25 20 15 10 5V 5 0 0 4 8 12 16 VDS, DRAIN TO SOURCE VOLTAGE (V) 12 15 3 6 9 VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 8. Saturation Characteristics Figure 7. Forward Diode Characteristics ID, DRAIN CURRENT (A) 5 Figure 6. Transfer Characteristics VGS = 0 V 1 4 3 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Forward Bias Safe Operating Area 100 TJ = 150oC 20 10 100 1000 VDS, DRAIN TO SOURCE VOLTAGE (V) 200 VDS = 20V 40 0.01 1 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 50 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 PULSE DURATION = 80  s DUTY CYCLE = 0.5% MAX 800 600 TJ = 150o C 400 200 TJ = 25 o C 0 20 ID = 10A 4 6 8 9 5 7 VGS, GATE TO SOURCE VOLTAGE (V) Figure 10. RDSON vs. Gate Voltage Figure 9. Saturation Characteristics www.onsemi.com 5 10 FCH190N65F−F085 3.0 1.2 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 2.5 2.0 1.5 1.0 ID = 10A VGS = 10V 0.5 0.0 −80 VGS = VDS ID = 250A 1.1 NORMALIZED GATE THRESHOLD VOLTAGE NORMALIZED DRAIN TO SOURCE ON−RESISTANCE TYPICAL CHARACTERISTICS −40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(o C) 1.0 0.9 0.8 0.7 0.6 0.5 −80 200 −40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE( o C) 200 Figure 12. Normalized Gate Threshold Voltage vs. Temperature Figure 11. Normalized RDSON vs. Junction Temperature 100000 1.15 CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 10mA 1.10 1.05 1.00 10000 Ciss 1000 Coss 100 10 Crss 0.95 1 0.90 −75 −50 −25 0 25 50 75 100 125 150 175 TJ , JUNCTION TEMPERATURE ( o C) 0 0.1 Figure 13. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature f = 1MHz VGS = 0V 1 10 100 1000 () VDS, DRAIN TO SOURCE VOLTAGE V Figure 14. Capacitance vs. Drain to Source Voltage 10 VDS = 260V ID = 10A 9.6 VDS = 325V 8 Eoss, (J) VGS, GATE TO SOURCE VOLTAGE(V) 12.0 VDS = 390V 6 4 4.8 2.4 2 0 7.2 0 10 20 30 40 50 Qg, GATE CHARGE(nC) 60 0 70 Figure 15. Gate Charge vs. Gate to Source Voltage 140 280 420 560 VDS, Drain to Source Voltage [V] 700 Figure 16. Eoss vs. Drain to Source Voltage www.onsemi.com 6 0 FCH190N65F−F085 VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 17. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr tf td(off) ton toff Figure 18. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 19. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time FCH190N65F−F085 + DUT VSD − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 20. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. FRFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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