FCH190N65F_F155

MOSFET – N-Channel, SUPERFET II, FRFET 650 V, 20.6 A, 190 mW FCH190N65F Description SUPERFET® II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SUPERFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. www.onsemi.com VDS RDS(ON) MAX ID MAX 650 V 190 m @ 10 V 20.6 A D Features • • • • • • G 700 V @ TJ = 150°C Typ. RDS(on)) = 168 m (Typ.) Ultra Low Gate Charge (Typ. Qg = 60 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 304 pF) 100% Avalanche Tested This Device is Pb−Free and is RoHS Compliant S N-CHANNEL MOSFET S D G Applications • • • • LCD / LED / PDP TV Solar Inverter Telecom, Server Power Supplies AC−DC Power Supply TO−247−3LD CASE 340CH MARKING DIAGRAM $Y&Z&3&K FCH 190N65F $Y &Z &3 &K FCH190N65F = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2014 October, 2020 − Rev. 4 1 Publication Order Number: FCH190N65F/D FCH190N65F ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage Unit 650 V ±20 V −DC −AC ID FCH190N65F−F155 Drain Current (f > 1 Hz) ±30 −Continuous (TC = 25°C) 20.6 −Continuous (TC = 100°C) 13.1 −Pulsed (Note 1) A IDM Drain Current 61.8 A EAS Single Pulsed Avalanche Energy (Note 2) 400 mJ IAR Avalanche Current (Note 1) 4.0 A EAR Repetitive Avalanche Energy (Note 1) 2.1 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 PD TJ, TSTG TL Power Dissipation (TC = 25°C) 208 W −Derate Above 25°C 1.67 W/°C −55 to + 150 °C 300 °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, ⅛ from Case for 5 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. IAS = 4 A, RG = 25 , Starting TJ = 25°C 3. ISD ≤ 10 A, di/dt ≤ 200 A/s, VDD ≤ 380 V, Starting TJ = 25 °C. THERMAL CHARACTERISTICS Symbol Parameter FCH190N65F−F155 Unit °C/W RJC Thermal Resistance, Junction to Case, Max. 0.6 RJA Thermal Resistance, Junction to Ambient, Max. 40 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FCH190N65F−F155 FCH190N65F TO−247−3LD Tube N/A N/A 30 Units www.onsemi.com 2 FCH190N65F ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Unit VGS = 0 V, ID = 10 mA, TJ = 25°C 650 − − V VGS = 0 V, ID = 10 mA, TJ = 150°C 700 − − 0.72 − V/°C A OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage BVDSS/ TJ Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25°C − IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V − − 10 VDS = 520 V, VGS = 0 V, TC = 125°C − 60 − VGS = ±20 V, VDS = 0 V − − ±100 nA IGSS Gate to Body Leakage Current ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 2 mA 3 − 5 V RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 10 A − 168 190 m Forward Transconductance VDS = 20 V, ID = 10 A − 18 − S VDS = 100 V, VGS = 0 V, f = 1 MHz − 2425 3225 pF − 78 104 pF − 0.68 − pF − pF gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz − 44 Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 304 − pF Total Gate Charge at 10 V VDD = 380 V, ID = 10 A, VGS = 10 V (Note 4) − 60 78 nC − 12 − nC − 25 − nC f = 1 MHz − 0.6 −  VDD = 380 V, ID = 10 A, VGS = 10 V, RG = 4.7  (Note 4) − 25 60 ns − 11 32 ns Coss(eff.) Qg(tot) Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller”Charge ESR Equivalent Series Resistance SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time − 62 134 ns Turn-Off Fall Time − 4.2 18 ns Maximum Continuous Drain to Source Diode Forward Current − − 20.6 A ISM Maximum Pulsed Drain to Source Diode Forward Current − − 61.8 A VSD tf DRAIN-SOURCE DIODE CHARACTERISTICS IS Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 10 A − − 1.2 V trr Reverse Recovery Time − 105 − ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 10 A, dIF/dt = 100 A/s − 515 − nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 FCH190N65F TYPICAL PERFORMANCE CHARACTERISTICS 100 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V ID, Drain Current (A) ID, Drain Current (A) 100 10 1 10 150°C 25°C 1 −55°C *Notes: 1. 250 s Pulse Test 2. TC = 25°C 0.3 *Notes: 1. VDS = 20 V 2. 250 s Pulse Test 1 VDS, Drain−Source Voltage (V) 0.1 10 3 8 100 0.3 VGS = 10 V 0.2 10 IS, Reverse Drain Current (A) RDS(ON), Drain−Source On−Resistance () 0.4 VGS = 20 V 150°C 1 0 14 28 42 ID, Drain Current (A) 56 25°C 0.1 0.01 *Note: TC = 25°C 0.001 0.0 70 *Notes: 1. VGS = 0 V 2. 250 s Pulse Test 0.3 0.6 0.9 1.2 1.5 VSD, Body Diode Forward Voltage (V) Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage 50000 VGS, Gate−Source Voltage (V) 10 10000 Capacitance (pF) 5 6 7 VGS, Gate−Source Voltage (V) Figure 2. Transfer Characteristics Figure 1. On−Region Characteristics 0.1 4 Ciss 1000 Coss 100 10 *Note: 1. VGS = 0 V 1 2. f = 1 MHz Ciss = Cgs + Cgd (Cds = Shorted) Coss = Cds + Cgd Crss = Cgd 0.1 0.1 1 10 Crss 100 6 4 2 0 1000 VDS, Drain−Source Voltage (V) VDS = 130 V VDS = 325 V VDS = 520 V 8 *Note: ID = 10 A 0 52 13 26 39 Qg, Total Gate Charge (nC) 65 Figure 6. Gate Charge Characteristics Figure 5. Capacitance Characteristics www.onsemi.com 4 FCH190N65F TYPICAL PREFORMANCE CHARACTERISTICS (continued) 2.5 RDS(on), (Normalized) Drain−Source On−Resistance BVDSS, (Normalized) Drain−Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8 −100 *Notes: 1. VGS = 0 V 2. ID = 10 mA −50 0 50 100 150 2.0 1.5 1.0 0.5 −100 200 TJ, Junction Temperature (°C) ID, Drain Current (A) 100 s 10 1 ms Operation in This Area is Limited by RDS(on) 1 DC *Notes: 1. TC = 25°C 2. TJ = 150°C 3. Single Pulse 100 150 200 1 10 100 10 9.6 7.2 4.8 2.4 280 420 560 25 50 75 100 125 TC, Case Temperature (°C) 150 Figure 10. Maximum Drain Current vs. Case Temperature 12.0 140 15 0 1000 VDS, Drain−Source Voltage (V) 0 20 5 Figure 9. Maximum Safe Operating Area EOSS (J) 50 25 10 s ID, Drain Current (A) 0 Figure 8. On−Resistance Variation vs. Temperature 100 0 −50 TJ, Junction Temperature (°C) Figure 7. Breakdown Voltage Variation vs. Temperature 0.1 *Notes: 1. VGS = 10 V 2. ID = 10 A 700 VDS, Drain to Source Voltage (V) Figure 11. EOSS vs. Drain to Source Voltage www.onsemi.com 5 FCH190N65F ZJC(t), Thermal Response (°C/W) TYPICAL PERFORMANCE CHARACTERISTICS (continued) 1 0.5 0.1 0.01 0.2 PDM 0.1 0.05 0.02 0.01 Single Pulse 0.005 10−5 10−4 t1 t2 *Notes: 1. ZJC(t) = 0.6°C/W Max. 2. Duty Factor, D = t1/t2 3. TJM − TC = PDM * ZJC(t) 10−3 10−2 10−1 t1, Rectangular Pulse Duration (sec) Figure 12. Transient Thermal Response Curve www.onsemi.com 6 1 FCH190N65F VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 13. Transient Thermal Response Curve RL VDS VDS 90% VDD VGS RG VGS DUT VGS 10% td(on) tr tf td(off) ton toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time FCH190N65F + DUT VDS − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. FRFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CH ISSUE A DATE 09 OCT 2019 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13853G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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